AON7514 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge R (at V =10V) < 5mW DS(ON) GS • High Current Capability R (at V = 4.5V) < 8.5mW • RoHS and Halogen-Free Compliant DS(ON) GS Application 100% UIS Tested • DC/DC Converters in Computing, Servers, and POL 100% R Tested g • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV ±±2200 VV GGSS Continuous Drain TC=25°C I 30 CurrentG T =100°C D 23 A C Pulsed Drain Current C I 120 DM Continuous Drain TA=25°C I 20 A Current T =70°C DSM 16 A Avalanche Current C I 32 A AS Avalanche energy L=0.05mH C E 26 mJ AS V Spike 100ns V 36 V DS SPIKE T =25°C 23 C P W Power Dissipation B T =100°C D 9 C T =25°C 3 A P W Power Dissipation A T =70°C DSM 2 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 60 75 °C/W Maximum Junction-to-Case Steady-State RqJC 4.5 5.4 °C/W Rev 0: Nov 2011 www.aosmd.com Page 1 of 6

AON7514 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.2 1.8 2.2 V GS(th) DS GS，D V =10V, I =20A 4.1 5 GS D mW R Static Drain-Source On-Resistance T=125°C 5.6 6.8 DS(ON) J V =4.5V, I =20A 6.7 8.5 mW GS D g Forward Transconductance V =5V, I =20A 91 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 28 A S DYNAMIC PARAMETERS C Input Capacitance 951 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 373 pF oss GS DS C Reverse Transfer Capacitance 62 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 15.7 22.5 nC g Q (4.5V) Total Gate Charge 7.5 10.5 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2.8 nC gs Q Gate Drain Charge 3.2 nC gd t Turn-On DelayTime 6.25 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75W , 2.5 ns r GS DS L tt TTuurrnn--OOffff DDeellaayyTTiimmee RR ==33WW 1188..55 nnss D(off) GEN t Turn-Off Fall Time 4 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 10.2 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 13.6 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150°C. J(MAX) D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov 2011 www.aosmd.com Page 2 of 6

AON7514 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V V =5V DS 80 80 7V 5V 4V 60 60 A) A) I(D 40 I(D 40 125°C 20 V =3.0V 20 25°C GS 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 10 1.8 8 VGS=4.5V stance 1.6 VIDG=S2=01A0V WWWWm) 6 Resi 1.4 ( n- N) O RDS(O 4 V =10V alized 1.2 GS m V =4.5V 2 Nor 1 IDG=S20A 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 I (A) D Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage (Note E) ((NNoottee EE)) 15 1.0E+02 I =20A D 1.0E+01 40 1.0E+00 10 WWWWm) 125°C A) 1.0E-01 125°C ( ( ON) IS 1.0E-02 DS( 25°C R 5 1.0E-03 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 0: Nov 2011 www.aosmd.com Page 3 of 6

AON7514 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V 1000 8 I =20A D C iss F) 800 p V(Volts)GS 46 pacitance ( 600 a 400 C C oss 2 200 C 0 0 rss 0 5 10 15 20 0 5 10 15 20 25 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 200 100.0 10m s 160 T =150°C RDS(ON) 10m s TJC(=M2ax5)°C Amps) 10.0 DC 110m0sm s er (W) 120 175 (D 1.0 10ms ow 80 2 I P 10 T =150°C 0.1 TJ(=M2ax5)°C 40 C 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case Safe Operating Area (Note F) (Note F) 10 ent DTJ=,PTKo=nT/TC+PDM.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse Transistance 1 RqJC=5.4°C/W 40 d si ee zR malimal P Norher 0.1 D CT Single Pulse J T Zqqqq on T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Nov 2011 www.aosmd.com Page 4 of 6

AON7514 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 W) sipation (20 ating I(A)D 2300 Dis nt r wer 10 urre Po C 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Figure 12: PoTwCeArS ED(e°C-r)ating (Note F) Figure 13: CurTrCeAnStE D(°eC-)rating (Note F) T =25°C A 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=75°C/W 40 Trasta d si ee zR 0.1 malimal NorJATher 0.01 Single Pulse PD Zqqqq T on T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Nov 2011 www.aosmd.com Page 5 of 6

AON7514 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 0: Nov 2011 www.aosmd.com Page 6 of 6