AON7446 60V N-Channel MOSFET SDMOSTM General Description Product Summary The AON7446 is fabricated with SDMOSTM trench VDS 60V technology that combines excellent R with low gate I (at V =10V) 8A DS(ON) D GS charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 145mW DS(ON) GS with controlled switching behavior. This universal R (at V = 7V) < 160mW DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g DFN 3x3_EP Top View Bottom View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 8 Current T =100°C D 5 A C Pulsed Drain Current C I 17 DM Continuous Drain TA=25°C I 3.3 A Current T =70°C DSM 2.7 A Avalanche Current C I , I 10 A AS AR Avalanche energy L=0.1mH C E , E 5 mJ AS AR T =25°C 16.7 C P W Power Dissipation B T =100°C D 7 C T =25°C 3.1 A P W Power Dissipation A T =70°C DSM 2 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 60 75 °C/W Maximum Junction-to-Case Steady-State RqJC 6.2 7.5 °C/W Rev 1: Mar. 2011 www.aosmd.com Page 1 of 7

AON7446 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 60 V DSS D GS V =60V, V =0V 10 I Zero Gate Voltage Drain Current DS GS m A DSS T =55°C 50 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2.2 2.7 3.3 V GS(th) DS GS D I On state drain current V =10V, V =5V 17 A D(ON) GS DS V =10V, I =3A 113 145 GS D mW R Static Drain-Source On-Resistance T =125°C 197 237 DS(ON) J V =7V, I =2.5A 118 160 mW GS D g Forward Transconductance V =5V, I =3A 7.5 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.76 1 V SD S GS I Maximum Body-Diode Continuous Current 15 A S DYNAMIC PARAMETERS C Input Capacitance 190 237 285 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 17 25 33 pF oss GS DS C Reverse Transfer Capacitance 5 9 13 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.4 2.1 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 3.5 4.4 5.3 nC g Q Gate Source Charge V =10V, V =30V, I =3A 0.7 0.9 1.1 nC gs GS DS D Q Gate Drain Charge 0.7 1.1 1.6 nC gd t Turn-On DelayTime 4.5 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =10W , 1.5 ns r GS DS L t Turn-Off DelayTime R =3W 15 ns D(off) GEN t Turn-Off Fall Time 1.5 ns f trr Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/m s 5.4 7.7 10 ns Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/m s 9 13 17 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2011 www.aosmd.com Page 2 of 7

AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V 7V VDS=5V 12 8 5V 9 6 A) A) I (D 6 4.5V I(D 4 125°C 25°C 3 2 V =3.5V GS 0 0 0 1 2 3 4 5 2.5 3 3.5 4 4.5 5 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 140 2.2 135 e 2 VGS=10V c 130 VGS=7V stan 1.8 ID=3A ) 125 esi WWWWm R 1.6 17 (N) 120 On- 5 DS(O 115 ed 1.4 2 R z 110 mali 1.2 VI G=S2=.571AV0 105 VGS=10V Nor 1 D 100 0.8 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 ID (A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junc1tio8n Gate Voltage (Note E) Temperature (Note E) 300 1.0E+02 I =3A D 1.0E+01 250 40 125°C 1.0E+00 ) 200 WWWW (mDS(ON) 150 I (A)S 11..00EE--0021 125°C 25°C R 1.0E-03 100 25°C 1.0E-04 50 1.0E-05 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 V (Volts) GS V (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage SD (Note E) Figure 6: Body-Diode Characteristics (Note E) Rev 1: Mar. 2011 www.aosmd.com Page 3 of 7

AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 350 V =30V DS 300 I =3A 8 D C iss 250 F) p s) 6 e ( 200 olt nc V a (S cit 150 G 4 a V p Ca 100 Coss 2 50 C rss 0 0 0 10 20 30 40 50 60 0 1 2 3 4 5 Qg (nC) VDS (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 200 10.0 101m0sm s 160 TJ(Max)=150°C T =25°C R C ps) limDSit(eOdN) 100m s W) 120 17 Am 1.0 1ms er ( 5 (D DC 10ms ow 80 2 I P 10 0.1 TJ(Max)=150°C 40 T =25°C C 0.0 0 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating 1Ju8nction- Operating Area (Note F) to-Case (Note F) 10 D=Ton/T In descending order ent TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce RqJC=7.5°C/W 40 Tra sta 1 d si e e z R mali mal Nor her 0.1 PD CT J Zqqqq T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar. 2011 www.aosmd.com Page 4 of 7

AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 20 nt e urr W)15 C nche TA=25°C TA=100°C ation ( a p al 10.0 si10 v s A) Peak A TA=150°C TA=125°C Power Di 5 (R A I 1.0 0 1 10 100 0 25 50 75 100 125 150 Time in avalanche, tA m(mmm s) TCASE (°C) Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F) (Note C) 10 10000 T =25°C A 8 1000 A) g I(D 6 W) 17 atin er ( 100 5 r w 2 ent 4 Po 10 Curr 10 2 0 1 0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000 T (°C) Pulse Width (s) 18 CASE Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note G) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e si ce 1 RqJA=75°C/W 40 n n a a Tr st d si e e z R 0.1 mali mal NorATher 0.01 Single Pulse PD J Zqqqq T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 1: Mar. 2011 www.aosmd.com Page 5 of 7

AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 12 12 3 125ºC di/dt=500A/m s 16 10 10 di/dt=500A/m s 125ºC 2.5 8 8 2 Q (nC)rr 182 Qrr 25ºC 125ºC 6 I (A)rm t (ns)rr 6 trr 25ºC 1.5S 4 4 1 4 Irm S 25ºC 25ºC 2 2 0.5 125ºC 0 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 IS (A) IS (A) Figure 17: Diode Reverse Recovery Charge and Figure 18: Diode Reverse Recovery Time and Peak Current vs. Conduction Current Softness Factor vs. Conduction Current 25 10 15 2.5 Is=4A 125ºC Is=4A 20 8 12 2 125ºC Q Q (nC)rr 1105 rr 125º 25ºC 46 I(A)rm t (ns)rr 69 25ºC trr 11.5 S Irm 125º 5 25ºC 2 3 0.5 S 25ºC 0 0 0 0 300 400 500 600 700 300 400 500 600 700 di/dt (Am/mmm s) di/dt (Am/mmm s) Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and Peak Current vs. di/dt Softness Factor vs. di/dt Rev 1: Mar. 2011 www.aosmd.com Page 6 of 7

AON7446 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 1: Mar. 2011 www.aosmd.com Page 7 of 7