AON6756 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology VDS 30V • Integrated Schottky Diode (SRFET) I (at V =10V) 36A D GS • Very Low RDS(on) at 4.5VGS R (at V =10V) < 2.4mW DS(ON) GS • Low Gate Charge R (at V = 4.5V) < 4mW • High Current Capability DS(ON) GS • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Computing, Servers, and POL 100% R Tested g • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 SRFETTM Soft RecoveryMOSFET: 2 7 Integrated Schottky Diode 3 6 4 5 G PIN1 S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 36 Current G T =100°C D 28 A C Pulsed Drain Current C I 144 DM Continuous Drain TA=25°C I 36 A Current G T =70°C DSM 32 A Avalanche Current C I 60 A AS Avalanche energy L=0.05mH C E 90 mJ AS V Spike 100ns V 36 V DS SPIKE T =25°C 83 C P W Power Dissipation B T =100°C D 33 C T =25°C 7.3 A P W Power Dissipation A T =70°C DSM 4.7 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 40 55 °C/W Maximum Junction-to-Case Steady-State RqJC 1.1 1.5 °C/W Rev.2.0: July 2014 www.aosmd.com Page 1 of 6

AON6756 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 30 V DSS D GS V =30V, V =0V 0.5 I Zero Gate Voltage Drain Current DS GS mA DSS T=125°C 100 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.4 1.7 2.4 V GS(th) DS GS, D V =10V, I =20A 2 2.4 GS D mW R Static Drain-Source On-Resistance T=125°C 2.6 3.2 DS(ON) J V =4.5V, I =20A 2.8 4 mW GS D g Forward Transconductance V =5V, I =20A 90 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.39 0.6 V SD S GS I Maximum Body-Diode Continuous CurrentG 36 A S DYNAMIC PARAMETERS C Input Capacitance 2796 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 1200 pF oss GS DS C Reverse Transfer Capacitance 165 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 46.8 64 nC g Q (4.5V) Total Gate Charge 22.3 30 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 8.4 nC gs Q Gate Drain Charge 8.6 nC gd t Turn-On DelayTime 9.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75W , 6.3 ns r GS DS L tt TTuurrnn--OOffff DDeellaayyTTiimmee RR ==33WW 3355..88 nnss D(off) GEN t Turn-Off Fall Time 12.3 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 20 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 40 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150°C. J(MAX) D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: July 2014 www.aosmd.com Page 2 of 6

AON6756 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4V 3.5V VDS=5V 80 80 4.5V 60 60 10V A) A) I(D 40 I(D 40 125°C 20 VGS=3V 20 25°C 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 4 1.4 VGS=4.5V ce 3 stan VIDG=S2=01A0V ) esi 1.2 Wm R (N) 2 On- RDS(O VGS=10V alized 1 1 m V =4.5V or IG=S20A N D 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 I (A) D Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage (Note E) ((NNoottee EE)) 8 1.0E+01 I =20A 125°C 7 D 1.0E+00 6 1.0E-01 ) 5 Wm A) ( 4 125°C ( 1.0E-02 RDS(ON) 3 IS 1.0E-03 25°C 2 25°C 1.0E-04 1 0 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev.2.0: July 2014 www.aosmd.com Page 3 of 6

AON6756 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 4000 V =15V DS 8 ID=20A 3500 C iss F) 3000 p V(Volts)GS 46 pacitance ( 22050000 Ca 1500 Coss 2 1000 500 C 0 0 rss 0 10 20 30 40 50 0 5 10 15 20 25 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 500 100.0 R 10m s 10m s 400 T =150°C DS(ON) J(Max) limited T =25°C 100m s C s) 10.0 W) 300 (AmpD 1.0 DC 110mmss ower ( 200 I P T =150°C J(Max) 0.1 TC=25°C 100 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V (Volts) DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-Case Operating Area (Note F) (Note F) 10 ent DTJ=,PTKo=nT/TC+PDM.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse Transistance 1 RqJC=1.5°C/W d si ee zR malimal P NorCTher 0.1 Single Pulse D J T Zq on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: July 2014 www.aosmd.com Page 4 of 6

AON6756 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 50 W) 80 40 sipation ( 60 ating I(A)D 30 Dis 40 nt r 20 wer urre o C P 20 10 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TCASE(°C) TCASE(°C) Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F) 10000 T =25°C A 1000 W) er ( 100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) FFiigguurree 1144:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo--AAmmbbiieenntt ((NNoottee HH)) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=55°C/W Trasta d si ee zR 0.1 malimal NorATher 0.01 PD J Single Pulse Zq T on T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: July 2014 www.aosmd.com Page 5 of 6

AON6756 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.2.0: July 2014 www.aosmd.com Page 6 of 6