AON6240 40V N-Channel MOSFET General Description Product Summary The AON6240 uses trench MOSFET technology that is VDS 40V uniquely optimized to provide the most efficient high I (at V =10V) 85A D GS frequency switching performance.Power losses are R (at V =10V) < 1.6mW DS(ON) GS minimized due to an extremely low combination of R (at V = 4.5V) < 2.4mW R and Crss.In addition,switching behavior is well DS(ON) GS DS(ON) controlled with a "Schottky style" soft recovery body diode. 100% UIS Tested 100% R Tested g DDFFNN55XX66 DD TToopp VViieeww TToopp VViieeww BBoottttoomm VViieeww 11 88 22 77 33 66 44 55 GG PPIINN11 SS Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 4400 VV DDSS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 85 Current G T =100°C D 67 A C Pulsed Drain Current C I 355 DM Continuous Drain TA=25°C I 27 A Current T =70°C DSM 22 A Avalanche Current C I , I 82 A AS AR Avalanche energy L=0.1mH C E , E 336 mJ AS AR T =25°C 83 C P W Power Dissipation B T =100°C D 33 C T =25°C 2.3 A P W Power Dissipation A T =70°C DSM 1.5 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 40 55 °C/W Maximum Junction-to-Case Steady-State RqJC 1 1.5 °C/W Rev 0: February 2011 www.aosmd.com Page 1 of 6

AON6240 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 40 V DSS D GS V =40V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.3 1.9 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 355 A D(ON) GS DS V =10V, I =20A 1.3 1.6 GS D mW R Static Drain-Source On-Resistance T=125°C 2.1 2.7 DS(ON) J V =4.5V, I =20A 1.8 2.4 mW GS D g Forward Transconductance V =5V, I =20A 166 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous CurrentG 85 A S DYNAMIC PARAMETERS C Input Capacitance 4360 5458 6550 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 970 1395 1815 pF oss GS DS C Reverse Transfer Capacitance 30 103 176 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.0 1.6 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 58 72.8 88 nC g Q (4.5V) Total Gate Charge 24 31 44 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 14.8 nC gs Q Gate Drain Charge 10.8 nC gd t Turn-On DelayTime 14.8 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==2200VV,, RR ==11WW ,, 55..55 nnss r GS DS L t Turn-Off DelayTime R =3W 61.3 ns D(off) GEN t Turn-Off Fall Time 10 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 16 23.9 31 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 59 84.6 110 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedence from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6

AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6600 6600 VV ==55VV 5500 44..55VV 5500 DDSS 1100VV 33VV 4400 4400 A)A) 3300 A)A) 3300 I(I(DD I(I(DD 2200 2200 112255°°CC 1100 VV ==22..55VV 1100 2255°°CC GGSS 00 00 00 11 22 33 44 55 00 11 22 33 44 55 66 FFiigg 11:: OOnn--RReeggiiooVVnnD D CCSShh((VVaaororaallttccsstt))eerriissttiiccss ((NNoottee EE)) FFiigguurree 22:: TTrraannssffeeVVrrGG CCSS((hhVVaaoorrllaattsscc))tteerriissttiiccss ((NNoottee EE)) 44 22 cece 11..88 VVGGSS==1100VV nn II ==2200AA 33 aa DD stst WWWWWWWWm)m) VVGGSS==44..55VV ResiResi 11..66 ((N)N)22 On-On- 11..44 RRDS(ODS(O alized alized 11..22 VIVIDDGG==SS22==0044AA..55VV 11 mm VV ==1100VV NorNor 11 GGSS 00 00..88 00 55 1100 1155 2200 2255 3300 00 2255 5500 7755 110000 112255 115500 117755 220000 II ((AA)) DD TTeemmppeerraattuurree ((°°CC)) FFiigguurree 33:: OOnn--RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee FFiigguurree 44:: OOnn--RReessiissttaannccee vvss.. JJuunnccttiioonn TTeemmppeerraattuurree VVoollttaaggee ((NNoottee EE)) ((NNoottee EE)) 5 1.0E+02 I =20A D 1.0E+01 4 1.0E+00 125°C )3 125°C WWWWm A) 1.0E-01 ( ( ON)2 IS 25°C DS( 1.0E-02 R 1 25°C 1.0E-03 0 1.0E-04 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 0: February 2011 www.aosmd.com Page 3 of 6

AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 77000000 VV ==2200VV 66000000 CCiissss 88 IIDD==SS2200AA DD 55000000 F)F) pp V(Volts)V(Volts)GSGS 4646 pacitance (pacitance ( 3434000000000000 aa CC CC 22000000 oossss 22 11000000 CC rrssss 00 00 00 1100 2200 3300 4400 5500 6600 7700 8800 9900 00 55 1100 1155 2200 2255 QQgg((nnCC)) VVDDSS((VVoollttss)) FFiigguurree 77:: GGaattee--CChhaarrggee CChhaarraacctteerriissttiiccss FFiigguurree 88:: CCaappaacciittaannccee CChhaarraacctteerriissttiiccss 11000000..00 440000 1100mm ss 336600 RR 110000..00 lliimmDDSSiitt((eeOOddNN)) 332200 TT ==115500°°CC JJ((MMaaxx)) 110000mm ss 228800 TTCC==2255°°CC ps)ps) 1100..00 11mmss W)W) 224400 AmAm DDCC 1100mmss er (er ( 220000 I(I(DD 11..00 PowPow 116600 TT ==115500°°CC 112200 00..11 JJ((MMaaxx)) TT ==2255°°CC 8800 CC 4400 00..00 00 00..0011 00..11 11 1100 110000 00..00000011 00..000011 00..0011 00..11 11 1100 VV ((VVoollttss)) DDSS PPuullssee WWiiddtthh ((ss)) FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee FFiigguurree 1100:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- OOppeerraattiinngg AArreeaa ((NNoottee FF)) CCaassee ((NNoottee FF)) 10 D=T /T nsient nce TRJq,JPCK=o=n1T.C5+°PCDM/W.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse Trasta 1 d si ee zR malimal Norher0.1 PD CT J Zqqqq Single Pulse T on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6

AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 11000000..00 110000 Current Current TTAA==2255°°CC TTAA==110000°°CC W)W)89890000 valanche valanche 110000..00 TTAA==115500°°CC sipation (sipation (567567000000 AA ss eak eak 1100..00 TTAA==112255°°CC er Dier Di4400 PP ww3300 (A) (A) R R PoPo2200 IIAA 1100 11..00 00 11 1100 110000 11000000 00 2255 5500 7755 110000 112255 115500 FFiigguurree 1122::TT SSiimmiinneegg iillnnee aPaPvvuuaallssllaaeenn AAccvvhhaaeell,,aa ttnnAAccmm((hhmmmmmm eess ))ccaappaabbiilliittyy FFiigguurree 1133:: PPooTTwwCCAAeeSSrrEE DD((°°°°°°°°ee--CCrraa))ttiinngg ((NNoottee FF)) ((NNoottee CC)) 110000 1100000000 9900 8800 TT ==2255°°CC A)A) 7700 11000000 AA ((DD ng Ing I 6600 W)W) nt ratint rati 45450000 ower (ower ( 110000 ee PP urrurr 3300 CC 1100 2200 1100 00 11 00 2255 5500 7755 110000 112255 115500 00..0000000011 00..000011 00..11 1100 11000000 TTCCAASSEE((°°°°°°°°CC)) PPuullssee WWiiddtthh ((ss)) FFiigguurree 1144:: CCuurrrreenntt DDee--rraattiinngg ((NNoottee FF)) FFiigguurree 1155:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- AAmmbbiieenntt ((NNoottee HH)) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience 1 RqJA=55°C/W Trasta d si ee zR malimal 0.1 NorJATher0.01 PD Zqqqq Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2011 www.aosmd.com Page 5 of 6

AON6240 GGaattee CChhaarrggee TTeesstt CCiirrccuuiitt && WWaavveeffoorrmm VVggss QQgg ++ 1100VV ++ VVDDCC QQggss QQggdd -- VVddss VVDDCC -- DDUUTT VVggss IIgg CChhaarrggee RReessiissttiivvee SSwwiittcchhiinngg TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss RRLL VVddss VVddss 9900%% ++ VVggss DDUUTT VVdddd VVDDCC RRgg -- 1100%% VVggss VVggss ttdd((oonn)) ttrr ttdd((ooffff)) ttff ttoonn ttooffff UUnnccllaammppeedd IInndduuccttiivvee SSwwiittcchhiinngg ((UUIISS)) TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss LL 22 VVddss EEAA RR == 11//22 LLIIAARR BBVVDDSSSS IIdd VVddss ++ VVggss Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 0: February 2011 www.aosmd.com Page 6 of 6