AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AON4421 uses advanced trench technology to VDS -30V provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. R (at V =-10V) < 26mW DS(ON) GS R (at V =-4.5V) < 34mW DS(ON) GS ESD Protected -RoHS Compliant -Halogen Free D DFN 3x2 Top View Bottom View Pin 1 D D 1 8 D 2 7 D G D 3 6 D G 4 5 S S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TA=25°C I -8 Current T =70°C D -6 A A Pulsed Drain Current C I -60 DM T =25°C 2.5 A P W Power Dissipation B T =70°C D 1.6 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 42 50 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 74 90 °C/W Maximum Junction-to-Lead Steady-State RqJL 25 30 °C/W Rev.1.0: Sepetember 2014 www.aosmd.com Page 1 of 5

AON4421 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250m A, V =0V -30 V DSS D GS V =-30V, V =0V -1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C -5 J I Gate-Body leakage current V =0V, V = ±20V ±10 m A GSS DS GS V Gate Threshold Voltage V =V I =-250m A -0.8 -1.3 -1.8 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -60 A D(ON) GS DS V =-10V, I =-8A 21 26 GS D mW R Static Drain-Source On-Resistance T=125°C 28 34 DS(ON) J V =-4.5V, I =-7A 27 34 mW GS D g Forward Transconductance V =-5V, I =-8A 22 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.74 -1 V SD S GS I Maximum Body-Diode Continuous Current -3 A S DYNAMIC PARAMETERS C Input Capacitance 930 1120 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 170 pF oss GS DS C Reverse Transfer Capacitance 120 pF rss R Gate resistance V =0V, V =0V, f=1MHz 8 W g GS DS SWITCHING PARAMETERS Q (-10V) Total Gate Charge 17.6 21 nC g Q (-4.5V) Total Gate Charge 8.6 10 nC g V =-10V, V =-15V, I =-8A GS DS D Q Gate Source Charge 2 nC gs Q Gate Drain Charge 3.4 nC gd t Turn-On DelayTime 6 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==11..99WW ,, 77 nnss r GS DS L t Turn-Off DelayTime R =3W 40 ns D(off) GEN t Turn-Off Fall Time 30 ns f trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/m s 18 22 ns Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/m s 32 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Sepetember 2014 www.aosmd.com Page 2 of 5

AON4421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 -6V -10V -4.5V V =-5V 50 25 DS -4V 40 20 (A) 30 -3.5V (A)D 15 -ID -I 20 -3V 10 10 5 125°C 25°C V =-2.5V GS 0 0 0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 Fig 1: On-Regio-nV DCSh(aVroalctste)ristics (Note E) Figure 2: Transf-eVr GCS(hVaoraltcst)eristics (Note E) 35 1.5 30 VGS=-4.5V nce 1.4 VIDG=S-=8A-10V a st Wm) 25 Resi 1.3 17 (N) On- 1.2 5 RDS(O 20 VGS=-10V malized 1.1 VIDG=S-=7A-4.51V20 15 Nor 1.0 10 0.9 0 4 8 12 16 20 0 25 50 75 100 125 150 175 -ID(A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Figure 4: On-Resistance vs. Junctio1n8 Temperature ((NNoottee EE)) 70 1.0E+02 I =-8A D 1.0E+01 60 40 1.0E+00 50 Wm) A) 1.0E-01 125°C (ON) 40 125°C -I(S 1.0E-02 DS( 25°C R 30 1.0E-03 20 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -V (Volts) -V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev.1.0: Sepetember 2014 www.aosmd.com Page 3 of 5

AON4421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 V =-15V DS I =-8A 1200 8 D C 1000 iss F) olts) 6 ce (p 800 V n V(GS 4 acita 600 - p a C 400 2 Coss 200 C 0 0 rss 0 5 10 15 20 0 5 10 15 20 25 30 Q (nC) -V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 10000 10m s T =25°C A 10.0 RDS(ON) 1ms 1000 limited Amps) 1.0 10ms wer (W) 100 ( o D P -I 100ms 10 0.1 T =150°C 10s TJ(=M2ax5)°C DC A 1 0.0 0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100 -V (Volts) DS Pulse Width (s) FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) AAmmbbiieenntt ((NNoottee FF)) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJA=90°C/W d si ee malizmal R 0.1 Norher P JAT 0.01 D Zq Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: Sepetember 2014 www.aosmd.com Page 4 of 5

AON4421 Gate Charge Test Circuit & Waveform Vgs Qg - -10V VDC - Qgs Qgd + Vds VDC + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds ton toff Vgs td(on) tr td(off) tf - Vgs DUT Vdd 90% VDC Rg + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - IIssdd L -Isd -IF ddII//ddtt trr + Vgs VDC Vdd -IRM Vdd - -Vds Ig Rev.1.0: Sepetember 2014 www.aosmd.com Page 5 of 5