AON2403 12V P-Channel MOSFET General Description Product Summary The AON2403 combines advanced trench MOSFET VDS -12V technology with a low resistance package to provide I (at V =-4.5V) -8A D GS extremely low RDS(ON). This device is ideal for load switch R (at V =-4.5V) < 21mW DS(ON) GS and battery protection applications. R (at V =-2.5V) < 28mW DS(ON) GS R (at V =-1.8V) < 40mW DS(ON) GS R (at V =-1.5V) < 54mW DS(ON) GS DFN 2x2B D Top View Bottom View D D S D S Pin 1 D D G G Pin 1 S Absolute Maximum Ratings T =25°C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V -12 V DS Gate-Source Voltage V ±8 V GS Continuous Drain TA=25°C I -8 A Current G T =70°C D -6 A Pulsed Drain Current C I -32 A DM T =25°C 2.8 A P W Power Dissipation A T =70°C D 1.8 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 37 45 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 66 80 °C/W Rev 0 : July 2012 www.aosmd.com Page 1 of 5

AON2403 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250m A, V =0V -12 V DSS D GS V =-12V, V =0V -1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C -5 J I Gate-Body leakage current V =0V, V =±8V ±100 nA GSS DS GS V Gate Threshold Voltage V =V , I =-250m A -0.3 -0.6 -0.9 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -32 A D(ON) GS DS V =-4.5V, I =-8A 16.5 21 GS D mW T=125°C 19.3 25 J R Static Drain-Source On-Resistance V =-2.5V, I =-6A 21.5 28 mW DS(ON) GS D V =-1.8V, I =-4A 30 40 mW GS D V =-1.5V, I =-1A 36 54 mW GS D g Forward Transconductance V =-5V, I =-8A 33 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.6 -1 V SD S GS I Maximum Body-Diode Continuous Current -3.5 A S DYNAMIC PARAMETERS C Input Capacitance 1370 pF iss C Output Capacitance V =0V, V =-6V, f=1MHz 350 pF oss GS DS C Reverse Transfer Capacitance 258 pF rss R Gate resistance V =0V, V =0V, f=1MHz 10 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 12.7 18 nC g Q Gate Source Charge V =-4.5V, V =-6V, I =-8A 1.7 nC gs GS DS D Q Gate Drain Charge 3.4 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 1111 nnss D(on) t Turn-On Rise Time V =-4.5V, V =-6V, R =0.75W , 25 ns r GS DS L t Turn-Off DelayTime R =3W 70 ns D(off) GEN t Turn-Off Fall Time 41.5 ns f trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/m s 20.7 ns Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/m s 5.2 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The Power dissipation PDis based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : July 2012 www.aosmd.com Page 2 of 5

AON2403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 20 -4.5V -2.5V V =-5V DS 30 -3V 15 25 -2V 20 -I(A)D 15 -I(A)D 10 125°C 10 5 25°C V =-1.5V GS 5 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 Fig 1: On-Regio-nV DCSh(aVroalctste)ristics (Note E) Figure 2: Transf-eVr GCS(hVaoraltcst)eristics (Note E) 80 1.3 V =-4.5V nce 1.2 IDG=S-8A WWWWR(m)DS(ON) 246000 VGSV=VG-G1SS.=5=-V1-2.8.5VV malized On-Resista 1.11 VIDG=S-=6-A2.5VVGS=-1.5V VIDG=S-=4-A111.87520V or 0.9 ID=-1A V =-4.5V N GS 0 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 -ID(A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Figure 4: On-Resistance vs. Junction1 8Temperature ((NNoottee EE)) 50 1.0E+02 I =-8A D 1.0E+01 40 (A) 1.04E0+00 125°C S ) 30 -I WWWWm 1.0E-01 (N) 125°C DS(O 20 1.0E-02 25°C R 1.0E-03 10 25°C 1.0E-04 0 1.0E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-Resist-aVnGcSe( Vvosl.t sG)ate-Source Voltage Figure 6: Body-Di-oVdSeD (CVhoaltrsa)cteristics (Note E) (Note E) Rev 0 : July 2012 www.aosmd.com Page 3 of 5

AON2403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2400 V =-6V DS I =-8A D 2000 4 olts) 3 ce (pF) 1600 Ciss V(VGS 2 acitan 1200 - p C a 800 oss C 1 400 C rss 0 0 0 3 6 9 12 15 0 2 4 6 8 10 12 Qg(nC) -VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 200 T =150°C J(Max) 10m s T =25°C 10m 1s00m s 160 A 10.0 R DS(ON) limited ps) 1ms W) 120 17 Am 1.0 10ms er ( 5 -I(D TJ(Max)=150°C DC Pow 80 120 0.1 T =25°C A 40 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- OOppeerraattiinngg AArreeaa ((NNoottee FF)) AAmmbbiieenntt ((NNoottee HH)) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJC=80°C/W 40 d si ee malizmal R 0.1 NorCTher 0.01 Single Pulse PD J Zqqqq T on T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : July 2012 www.aosmd.com Page 4 of 5

AON2403 Gate Charge Test Circuit & Waveform Vgs Qg - -10V VDC - Qgs Qgd + Vds VDC + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds ton toff Vgs td(on) tr td(off) tf - Vgs DUT Vdd 90% VDC Rg + Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = 1/2 LI2 AR AR Vds Id Vds VVggss -- BVDSS Vgs VVdddd VDC Rg + Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L -Isd -I trr Isd F dI/dt + -I Vgs VDC Vdd RM Vdd - -Vds Ig Rev 0 : July 2012 www.aosmd.com Page 5 of 5