AOD480 30V N-Channel MOSFET General Description Features 1.4 The AOD480 uses advanced trencVhG Ste=c1h0nVo,l oIDg=y1 a8nAd VDS(V) = 30V design to provide excellent RDS(ON) with low gate ID= 25A (VGS= 10V) charge. This device is suitable for use in PWM, load R <23 mW (V = 10V) DS(ON) GS switching and general purpose applications. RDS(ON)<33 mW (VGS= 4.5V) 100% UIS Tested 100% Rg Tested TO-252 Top View Bottom View D-PAK D D D G S G S G S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C 25 CCuurrrreenntt G TT ==110000°°CC II 1188 AA CC DD Pulsed Drain Current C I 64 DM Avalanche Current C I 12 A AR Repetitive avalanche energy L=0.1mH C E 7 mJ AR T =25°C 21 C P W Power Dissipation B T =100°C D 11 C T =25°C 2.5 A P W Power Dissipation A T =70°C DSM 1.6 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W Maximum Junction-to-Ambient A Steady-State RqJA 40 50 °C/W Maximum Junction-to-Case B Steady-State RqJC 4.5 7 °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD480 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =24V, V =0V 0.004 1 I Zero Gate Voltage Drain Current DS GS m A DSS T =55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.5 2.1 2.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 64 A D(ON) GS DS V =10V, I =20A 18.5 23 GS D mW R Static Drain-Source On-Resistance T =125°C 26 32 DS(ON) J V =4.5V, I =8A 25.4 33 mW GS D g Forward Transconductance V =5V, I =20A 20 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 3.2 A S DYNAMIC PARAMETERS C Input Capacitance 373 448 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 67 pF oss GS DS C Reverse Transfer Capacitance 41 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2 2.8 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 5.7 7.1 8.6 nC g Q (4.5V) Total Gate Charge 2.7 3.5 4.2 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 1.2 nC gs Q Gate Drain Charge 1.6 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 44..33 nnss DD((oonn)) t Turn-On Rise Time V =10V, V =15V, R =0.75W , 2.8 ns r GS DS L t Turn-Off DelayTime R =3W 15.8 ns D(off) GEN t Turn-Off Fall Time 3 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/m s 8.4 10.5 12.6 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/m s 3.6 4.5 5.4 nC A: The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175°C. J(MAX) D. The RqJAis the sum of the thermal impedence from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. J(MAX) G. The maximum current is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA A curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST2008). Rev3: May. 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 16 10V 50 V =5V 6V DS 12 40 4.5V A) 30 A) 8 (D (D I I 20 VGS=3.5V 125°C 4 10 25°C 0 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 VDS(Volts) VGS(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 35 1.8 V =10V GS 30 VGS=4.5V ance 1.6 ID=20A st ) si WWWWm Re 1.4 VGS=4.5V (N) 25 On- ID=8A RDS(O alized 1.2 20 m or 1 V =10V N GS 1155 00..88 00 55 1100 1155 2200 00 2255 5500 7755 110000 112255 115500 117755 I (A) Temperature (°C) D Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature Gate Voltage 60 1.0E+01 I =20A D 50 1.0E+00 1.0E-01 ) 40 WWWWm 125°C ( 125°C A) N) ( 1.0E-02 THISDS(O PR3O0DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CIOSNSUMER MARKET. APPLICATIONS OR US2E5S° ACS CRITICAL R COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AU1T.0HEO-0R3IZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF2 S0UCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABIL2I5T°Y CWITHOUT NOTICE. 1.0E-04 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 V (Volts) Figure 5: On-ResistanGSce vs. Gate-Source Voltage VSD(Volts) Figure 6: Body-Diode Characteristics AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 8 VDS=15V 500 C I =20A iss D F) olts) 6 ce (p 400 (VGS 4 citan 300 1.4 V a p 200 Ca Coss 494 593 2 100 692 830 0 0 Crss 0 2 4 6 8 0 5 10 15 20 25 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 193 18 100 100 R DS(ON) 80 T =175°C limited J(Max) 10 10m s TC=25°C s) W) 60 mp er ( (A DC 100m s ow 40 D P I 1 1ms T =175°C J(Max) 20 T =25°C C 00 00..11 59 00..00000011 00..000011 00..0011 00..11 11 1100 00..11 11 1100 110000 114422 VV ((VVoollttss)) PPuullssee WWiiddtthh ((ss)) DDSS 30 Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Case (Note F) Operating Area (Note F) 10 D=T /T ent TJ,PKo=nTC+PDM.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse nsince RqJC=7°C/W Trasta 1 d si ee zR malimal Norher0.1 PD CT J T Zqqqq on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 nt e Curr W) valanche 10 sipation (20 A s k Di ea er 10 P w A), Po (D I 1 0 1 10 100 1000 0 25 50 75 100 125 150 175 Time in avalanche, t (s) Figure 12: Single Pulse AvalanAche capability TCASE(°°°°C) Figure 13: Power De-rating (Note B) 30 50 T =25°C 40 A A) (D 20 g I W) 30 atin er ( ent r Pow 20 urr 10 C 10 00 00 00 2255 5500 7755 110000 112255 115500 117755 00..0011 00..11 11 1100 110000 11000000 T (°°°°C) Pulse Width (s) CASE Figure 14: Current De-rating (Note B) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H) 10 D=T /T In descending order on ent TRJq,JPAK==5T0A°+PCD/MW.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsince 1 Trasta d si ee zR 0.1 malimal Norher PD JAT 0.01 Zqqqq Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD480 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms LL 22 VVddss EEAA RR == 11//22 LLIIAARR BBVVDDSSSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs t Vds - L Isd I rr Isd F dI/dt + I Vgs Vdd RM VDC Vdd - Vds Ig AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm