AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench V (V) = -40V DS technology to provide excellent R and low gate I = -40A (V = -10V) DS(ON) D GS charge. With the excellent thermal resistance of the R < 15mW (V = -10V) DS(ON) GS DPAK/IPAK package, this device is well suited for high R < 20mW (V = -4.5V) DS(ON) GS current applications. 100% UIS Tested! -RoHS Compliant 100% Rg Tested! -Halogen Free* TO252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D G S G S G S D S D G G S Absolute Maximum Ratings T =25°C unless otherwise noted C PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V -40 V DS Gate-Source Voltage V ±20 V GS Continuous Drain T =25°C -40 C Current B,H T =100°C I -31 C D A Pulsed Drain Current C I -115 DM Avalanche Current C I -42 AR Repetitive avalanche energy L=0.1mH C E 88 mJ AR T =25°C 62.5 C P Power Dissipation B T =100°C D 31 C W T =25°C 2.5 A P Power Dissipation A T =70°C DSM 1.6 A Junction and Storage Temperature Range T , T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A,G t ≤ 10s 15 20 °C/W Maximum Junction-to-Ambient A,G Steady-State Rq JA 41 50 °C/W Maximum Junction-to-Case D,F Steady-State Rq JC 2 2.4 °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOD4185/AOI4185 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250m A, V =0V -40 V DSS D GS V =-40V, V =0V -1 IDSS Zero Gate Voltage Drain Current DS GS m A T =55°C -5 J IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA V Gate Threshold Voltage V =V I =-250m A -1.7 -1.9 -3 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -115 A D(ON) GS DS V =-10V, I =-20A 12.5 15 GS D R Static Drain-Source On-Resistance T =125°C 19 23 mW DS(ON) J V =-4.5V, I =-15A 16 20 GS D g Forward Transconductance V =-5V, I =-20A 50 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.72 -1 V SD S GS I Maximum Body-Diode Continuous Current -20 A S DYNAMIC PARAMETERS C Input Capacitance 2550 pF iss C Output Capacitance V =0V, V =-20V, f=1MHz 280 pF oss GS DS C Reverse Transfer Capacitance 190 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.5 4 6 W g GS DS SWITCHING PARAMETERS Q (-10V) Total Gate Charge 42 55 nC g Q (-4.5V) Total Gate Charge V =-10V, V =-20V, 18.6 g GS DS Qgs Gate Source Charge ID=-20A 7 nC Q Gate Drain Charge 8.6 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 99..44 nnss DD((oonn)) t Turn-On Rise Time V =-10V, V =-20V, R =1W , 20 ns r GS DS L t Turn-Off DelayTime R =3W 55 ns D(off) GEN t Turn-Off Fall Time 30 ns f trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/m s 38 49 ns Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/m s 47 nC A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are based on T =150°C, using steady state junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175°C. J(MAX) D. The RθJAis the sum of the thermal impedence from junction to case RθJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a TBD maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) TBD G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST2008). Rev4: April, 2012 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 -10V -6.0V VDS=-5V 100 -4.5V 80 80 60 -I(A)D 60 -4.0V -I(A)D 40 40 ` 125°C V =-3.5V GS 20 20 25° 0 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 -V (Volts) -V (Volts) DS GS Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics 24 2 22 e 1.8 V =-10V c GS n I =-20A 20 VGS=-4.5V sta 1.6 D ) si e WWWWm 18 R 1.4 (N) On- VI G=S-=1-54A.5V DS(O 16 ed 1.2 D R z 14 VGS=-10V mali 1 12 Nor 0.8 1100 00..66 00 1100 2200 3300 4400 5500 6600 --5500 --2255 00 2255 5500 7755 110000 112255 115500 117755 220000 -ID(A) Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature Gate Voltage 45 100 I =-20A 150 D 40 10 mJ 35 1 ) WWWWm 30 A) 0.1 125°C (S(ON) 25 125°C -I(S 0.01 RD 25°C 20 0.001 25°C 15 0.0001 10 0.00001 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -V (Volts) GS -V (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage SD Figure 6: Body-Diode Characteristics AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 V =-20V DS I =-20A 3000 D 8 C iss 2500 F) p Volts) 6 nce ( 2000 V(GS 4 acita 1500 - p a C 1000 2 Crss C 500 oss 0 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 Q (nC) -V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000 10000 T =175° J(Max) C 100 10m s RDS(ON) 1000 Amps) 10 limited 100m s wer (W) -I(D 1ms Po 100 10ms 1 DC T =175°C JJ((MMaaxx)) TT ==2255°°CC CC 00..11 1100 00..11 11 1100 110000 00..0000000011 00..00000011 00..000011 00..0011 00..11 11 -V (Volts) DS Pulse Width (s) Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to- Safe Operating Area (Note F) Case (Note F) 10 150 D=T /T In descending order on sient ce TRJq,JPCK==2T.c4+°PDCM/W.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse mJ nn aa 1 Trst d si ee zR alial mm Norher 0.1 PD JcT Zqqqq T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 50 60 40 n (W)50 (A)D atio40 ng I 30 Dissip30 nt rati 20 wer 20 urre o C P - 10 10 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TCASE(°°°°C) TCASE(°°°°C) Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B) 10000 T =150° J(Max) C 1000 W) r ( 100 e w o P 10 11 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 10 150 D=T /T In descending order on nsient nce 1 TRJq,JPAK==5T0A°+PCD/MW.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Trasta d si ee zR 0.1 malimal Norher PD AT 0.01 J Zqqqq T on Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AOD4185/AOI4185 Gate Charge Test Circuit & Waveform Vgs Qg - -10V VDC - Qgs Qgd + Vds VDC + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds ton toff Vgs td(on) tr td(off) tf - Vgs DUT Vdd 90% VDC Rg + Vgs 10% Vds UUnnccllaammppeedd IInndduuccttiivvee SSwwiittcchhiinngg ((UUIISS)) TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss 22 LL EE == 11//22 LLII AARR AARR VVddss Id Vds Vgs - BVDSS Vgs Vdd VDC Rg + Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L -Isd -I trr Isd F dI/dt + -I Vgs VDC Vdd RM Vdd - -Vds Ig AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm