AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology VDS -60V • Low RDS(ON) ID (at VGS=-10V) -26A • Low Gate Charge R (at V =-10V) < 40mΩ DS(ON) GS • Optimized for fast-switching applications R (at V =-4.5V) < 55mΩ DS(ON) GS Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO252 TO-251A DPAK IPAK D TopView Bottom View Top View Bottom View D D G D S D G G D S S D G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD409 TO-252 Tape & Reel 2500 AOI409 TO-251A Tube 4000 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -60 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I -26 Current TC=100°C D -18 A Pulsed Drain Current C I -80 DM Avalanche Current C I -26 A AS Avalanche energy L=0.1mH C E 34 mJ AS TC=25°C P 60 W Power Dissipation B TC=100°C D 30 TA=25°C P 2.5 W Power Dissipation A TA=70°C DSM 1.6 Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W R Maximum Junction-to-Ambient A D Steady-State qJA 40 50 °C/W Maximum Junction-to-Case Steady-State RqJC 1.9 2.5 °C/W Rev.7.0: March 2018 www.aosmd.com Page 1 of 6

AOD409/AOI409 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250μA, VGS=0V -60 V DSS D V =-48V, V =0V -1 I Zero Gate Voltage Drain Current DS GS μA DSS T=55°C -5 J I Gate-Body leakage current V =0V, V =±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250mA -1.2 -1.9 -2.4 V GS(th) DS GS, D I On state drain current V =-10V, V =-5V -80 A D(ON) GS DS V =-10V, I =-20A 32 40 GS D mΩ R Static Drain-Source On-Resistance T=125°C 53 DS(ON) J V =-4.5V, I =-20A 43 55 mΩ GS D g Forward Transconductance V =-5V, I =-20A 32 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.73 -1 V SD S GS I Maximum Body-Diode Continuous Current -30 A S DYNAMIC PARAMETERS C Input Capacitance 2977 3600 pF iss C Output Capacitance V =0V, V =-30V, f=1MHz 241 pF oss GS DS C Reverse Transfer Capacitance 153 pF rss R Gate resistance f=1MHz 2 2.4 Ω g SWITCHING PARAMETERS Qg(10V) Total Gate Charge 44 54 nC Qg(4.5V) Total Gate Charge V =-10V, V =-30V, I =-20A 22.2 28 nC GS DS D Q Gate Source Charge 9 nC gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 12 ns D(on) t Turn-On Rise Time V =-10V, V =-30V, R =1.5W, 14.5 ns r GS DS L tD(off) Turn-Off DelayTime RGEN=3W 38 ns t Turn-Off Fall Time 15 ns f trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/ms 40 50 ns Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/ms 59 nC A. The value of R is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power qJA A dissipation P is based on R t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on DSM qJA the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175°C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. qJA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: March 2018 www.aosmd.com Page 2 of 6

AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 -10V -4.5V V =-5V -4V DS 25 25 -5V 20 20 -6V A) 15 A) 15 -I (D -3.5V -I(D 10 10 125°C 5 5 25°C V =-3V GS 0 0 0 1 2 3 4 5 1 2 3 4 5 -V (Volts) -V (Volts) DS GS Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 60 2 ) W 50 VGS=-4.5V sistance 11..68 VIDG=S-=2-01A0 V m 40 e R (ON) On- 1.4 RDS( 30 ed z VGS=-10V mali 1.2 VGS=-4.5V 20 Nor 1 ID=-20A 10 0.8 0 5 10 15 20 25 0 25 50 75 100 125 150 175 -I (A) Temperature (°C) D Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage (Note E) (Note E) 80 1.0E+01 I =-20A D 1.0E+00 125°C m) W 60 A) 1.0E-01 (ON) -I (S 1.0E-02 125°C S( D R 40 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev.7.0: March 2018 www.aosmd.com Page 3 of 6

AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 V =-30V ID=S-20A 4000 D 8 3500 C F) 3000 iss olts) 6 ce (p 2500 V n (GS 4 cita 2000 V a - p 1500 a C 2 1000 C 500 oss C 0 0 rss 0 10 20 30 40 50 60 0 5 10 15 20 25 30 Q (nC) -V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 500 T =175°C J(Max) T =25°C 100.0 10ms 400 C 10ms mps) 10.0 RlimDSit(eOdN ) 110m0sm s er (W) 300 A w -I (D 1.0 DC 10ms Po 200 0.1 T =175°C 100 J(Max) T =25°C C 0.0 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -V (Volts) DS Pulse Width (s) V > or equal to 4.5V GS Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Case (Note F) Safe Operating Area (Note F) 10 D=T /T In descending order nt TJ,PKo=nTC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience RqJC=2.5°C/W Trasta 1 d si ee zR malimal Norher 0.1 Single Pulse PD CT ZJq Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.7.0: March 2018 www.aosmd.com Page 4 of 6

AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS LI 30 tABVVD 80 DD Current 25 n (W) 60 anche 20 sipatio 40 val Dis eak A 15 ower 20 P P A), -I(D 10 T A=25°C 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) TCASE (°C) Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F) 30 60 T =25°C A 25 50 A) 20 40 ng -I(D 15 er (W) 30 nt rati 10 Pow 20 e urr C 5 10 0 0 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) T (°C) CASE Figure 15: Single Pulse Power Rating Junction-to- Figure 14: Current De-rating (Note F) Ambient (Note H) Transient stance 101 RDTJq=,JPTAK=o=n5T/T0A° +PCD/MW.Z qJA.RqJA IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5 , 0.02, 0.01, single pulse d si ee zR malimal 0.1 Norher PD Z JAqT 0.01 Single Pulse T on T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.7.0: March 2018 www.aosmd.com Page 5 of 6

AOD409/AOI409 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.7.0: March 2018 www.aosmd.com Page 6 of 6