AOD240 40V N-Channel MOSFET General Description Product Summary The AOD240 uses Trench MOSFET technology that VDS 40V is uniquely optimized to provide the most efficient high I (at V =10V) 70A D GS frequency switching performance. Power losses are R (at V =10V) < 3mΩ DS(ON) GS minimized due to an extremely low combination of R (at V = 4.5V) < 3.9mΩ R and C .In addition, switching behavior is well DS(ON) GS DS(ON) rss controlled with a “Schottky style” soft recovery body diode. 100% UIS Tested 100% R Tested g TO252 DPAK D Top View Bottom View D D G S G S G S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V ±20 V GS Continuous Drain T =25°C 70 C I Current G T =100°C D 55 A C Pulsed Drain Current C I 300 DM Continuous Drain TA=25°C I 23 A Current T =70°C DSM 18 A Avalanche Current C I , I 68 A AS AR Avalanche energy L=0.1mH C E , E 231 mJ AS AR T =25°C 150 C P W Power Dissipation B T =100°C D 75 C T =25°C 2.7 A P W Power Dissipation A T =70°C DSM 1.7 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 14.2 17 °C/W R Maximum Junction-to-Ambient A D Steady-State θJA 39 47 °C/W Maximum Junction-to-Case Steady-State RθJC 0.8 1 °C/W Rev0 : May 2010 www.aosmd.com Page 1 of 6

AOD240 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250µA, V =0V 40 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS µA DSS T =55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250µA 1 1.7 2.2 V GS(th) DS GS D I On state drain current V =10V, V =5V 300 A D(ON) GS DS V =10V, I =20A 2.4 3 GS D mΩ R Static Drain-Source On-Resistance T =125°C 3.7 4.8 DS(ON) J V =4.5V, I =20A 2.95 3.9 mΩ GS D g Forward Transconductance V =5V, I =20A 78 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V SD S GS I Maximum Body-Diode Continuous CurrentG 70 A S DYNAMIC PARAMETERS C Input Capacitance 2800 3510 4300 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 760 1070 1420 pF oss GS DS C Reverse Transfer Capacitance 50 68 155 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1 1.5 Ω g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 39 49 60 nC g Q (4.5V) Total Gate Charge 17 22 27 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 7 9 11 nC gs Q Gate Drain Charge 4 7 10 nC gd t Turn-On DelayTime 11 ns D(on) t Turn-On Rise Time V =10V, V =20V, R =1Ω, 10 ns r GS DS L t Turn-Off DelayTime R =3Ω 38 ns D(off) GEN t Turn-Off Fall Time 11 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 21 28 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40 58 76 nC A. The value of R is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The θJA A Power dissipation P is based on R and the maximum allowed junction temperature of 150°C. The value in any given application depends on DSM θJA the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25°C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. θJA θJC E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : May 2010 www.aosmd.com Page 2 of 6

AOD240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V V =5V 7V DS 80 3.5V 3V 80 60 60 A) A) I (D 40 I(D 40 125°C 25°C 20 20 Vgs=2.5V 0 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 8 2 e c 1.8 6 an VGS=10V )Ω esist 1.6 ID=20A m R 17 (N) 4 VGS=4.5V On- 1.4 5 RDS(O zed 1.2 VIDG=S2=04A.5V2 2 mali 10 V =10V or 1 GS N 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 I (A) D Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Tem18perature Gate Voltage (Note E) (Note E) 8 1.0E+02 I =20A D 1.0E+01 6 1.0E+4000 125°C (m)ΩN) 4 125°C I (A)S 11..00EE--0021 25°C O S( RD 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 V (Volts) SD V (Volts) Figure 6: Body-Diode Characteristics (Note E) GS Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: May 2010 www.aosmd.com Page 3 of 6

AOD240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 V =20V DS 8 ID=20A 4000 Ciss F) p V (Volts)GS 46 pacitance ( 23000000 a C C oss 2 1000 C rss 0 0 0 10 20 30 40 50 0 10 20 30 40 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 600 10µs 100.0 10µs 500 T =175°C R J(Max) DS(ON) 100µs T =25°C C s) 10.0 limited 1ms W) 400 17 Amp DC 10ms er ( 5 (D 1.0 ow 300 2 I P 10 T =175°C J(Max) 0.1 T =25°C 200 C 0.0 100 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) Case (Note F) 10 D=T /T In descending order on ent TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce RθJC=1°C/W 40 Tra sta 1 d si e e z R mali mal Nor her 0.1 PD CT ZJθ Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: May 2010 www.aosmd.com Page 4 of 6

AOD240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 200 nt e Curr W)160 eak Avalanche 100 TA=2T5A°=C150°C TA=100°C er Dissipation (12800 P w A) Po 40 (R TA=125°C A I 10 0 1 10 100 1000 0 25 50 75 100 125 150 175 Time in avalanche, tA (µs) TCASE (°C) Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F) C) 80 10000 T =25°C A A) 60 1000 (D g I W) 17 nt ratin 40 ower ( 100 52 e P 10 urr C 20 10 0 1 0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 0 1000 TCASE (°C) Pulse Width (s) 18 Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H) 10 D=T /T In descending order on ent TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce 1 RθJA=47°C/W 40 Tra sta d si e e z R 0.1 mali mal NorATher 0.01 PD ZJθ Single Pulse T on T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: May 2010 www.aosmd.com Page 5 of 6

AOD240 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 0: May 2010 www.aosmd.com Page 6 of 6