AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET V 700V@150℃ DS process that is designed to deliver high levels of I (at V =10V) 1.3A D GS performance and robustness in popular AC-DC R (at V =10V) < 9W applications. DS(ON) GS By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested! 100% R Tested! g TO252 TO251A DPAK IPAK TO251 D Top View Bottom View Top View Bottom View Top View Bottom View D D S G G G S G D S S D G G D S S D G S AOD1N60 AOI1N60 AOU1N60 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V ±30 V GS Continuous Drain TC=25°C I 1.3 CurrentB T =100°C D 0.8 A C Pulsed Drain Current C I 4 DM Avalanche Current C I 1 A AR Repetitive avalanche energy C E 15 mJ AR Single pulsed avalanche energy H E 30 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25°C 45 W C P Power Dissipation B Derate above 25oC D 0.36 W/ oC Junction and Storage Temperature Range T, T -50 to 150 °C J STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Typical Maximum Units Maximum Junction-to-Ambient A,G RqJA 45 55 °C/W Maximum Case-to-sink A RqCS - 0.5 °C/W Maximum Junction-to-CaseD,F RqJC 2.3 2.8 °C/W Rev 5: Aug 2011 www.aosmd.com Page 1 of 6

AOD1N60/AOU1N60/AOI1N60 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250µA, V =0V, T=25°C 600 BV Drain-Source Breakdown Voltage D GS J DSS I =250µA, V =0V, T=150°C 700 V D GS J BV DSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.6 V/ oC /∆TJ V =600V, V =0V 1 IDSS Zero Gate Voltage Drain Current VDS=480V, TG=S125°C 10 m A DS J I Gate-Body leakage current V =0V, V =±30V 100 nA GSS DS GS V Gate Threshold Voltage V =5V,I =250m A 3 4.1 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =0.65A 7.5 9 W DS(ON) GS D g Forward Transconductance V =40V, I =0.65A 0.9 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current 1 A S I Maximum Body-Diode Pulsed Current 4 A SM DYNAMIC PARAMETERS C Input Capacitance 105 130 160 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 12 14.5 18 pF oss GS DS C Reverse Transfer Capacitance 1.5 1.8 2.2 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.9 3.5 5.3 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 6.1 8 nC g Q Gate Source Charge V =10V, V =480V, I =1A 1.3 2 nC gs GS DS D Q Gate Drain Charge 3.1 4 nC gd t Turn-On DelayTime 10 13 ns D(on) t Turn-On Rise Time V =10V, V =300V, I =1A, 6.7 13 ns r GS DS D ttDD((ooffff)) TTuurrnn--OOffff DDeellaayyTTiimmee RGG=25W 2200 2266 nnss t Turn-Off Fall Time 11.5 23 ns f trr Body Diode Reverse Recovery Time IF=1.3A,dI/dt=100A/m s,VDS=100V 114 137 ns Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/m s,VDS=100V 0.63 0.76 m C A. The value of RqJAis measured with the device in a still air environment with TA =25°C. B. The power dissipation P is based on T =150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in D J(MAX) setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C. J(MAX) D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. J(MAX) G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. A H. L=60mH, I =1A, V =150V, R =10Ω, Starting T=25°C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Aug 2011 www.aosmd.com Page 2 of 6

AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 10 10V -55°C V =40V 6.5V DS 1.5 I(A)D 1 6V I(A)D 1 125°C 0.5 25°C V =5.5V GS 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 Fig 1: On-RVegDSio(nV oClthsa)racteristics Figure 2: TraVnGsSf(eVro Cltsh)aracteristics 14.0 2.5 13.0 e nc 2 VGS=10V 12.0 sta ID=0.5A ) 11.0 VGS=10V Resi 1.5 WWWW( n- N) O DS(O 10.0 ed 1 R z 9.0 mali or 0.5 8.0 N 7.0 0 0 0.5 1 1.5 2 2.5 -100 -50 0 50 100 150 200 I (A) Temperature (°C) FFiigguurree 33:: OOnn--RReessiissttaanncceeD vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee Figure 4: On-Resistance vs. Junction Temperature Voltage 1.2 1.0E+01 I =30A D 1.0E+00 d) 1.1 40 125°C e z Normali 1 125° I(A)S1.0E-01 25°C ( 1.0E-02 DSS V B 0.9 25° 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 Figure 5: Break DownT Jv(so.C J)unction Temperature Figure 6: BodVy-SDDi(oVdoel tCs)haracteristics Rev 5: Aug 2011 www.aosmd.com Page 3 of 6

AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 C iss V =480V 12 ID=S1A D pF) 100 C olts) 9 nce ( oss V a (S cit VG 6 pa Ca 10 C rss 3 0 1 0 2 4 6 8 0.1 1 10 100 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 10 800 10m s 100m s 600 TJ(Max)=150°C Amps) 1 RlimDSit(eOdN) 101mmss wer (W) 400 TC=25°C ( o ID 0.1 0.1s P DC TJ(Max)=150°C 200 T =25°C C 0.01 0 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 VDS(Volts) Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- OOppeerraattiinngg AArreeaa ((NNoottee FF)) CCaassee ((NNoottee FF)) 10 D=Ton/T In descending order nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience RqJC=2.8C/W Trasta 1 d si ee zR malimal Norher 0.1 PD CT J Zqqqq Single Pulse T on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Aug 2011 www.aosmd.com Page 4 of 6

AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 1.5 50 W) 1.2 sipation (3400 ating I(A)D 0.9 Dis nt r 0.6 wer 20 urre o C P 10 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TCASE(°C) TCASE(°C) Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B) 400 T =150°C J(Max) T =25°C 300 A W) er ( 200 w o P 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 PPuullssee WWiiddtthh ((ss)) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 10 D=T /T In descending order on nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience 1 RqJA=55°C/W Trasta d si ee malizmal R 0.1 Norher PD JAT 0.01 Zqqqq T Single Pulse on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev 5: Aug 2011 www.aosmd.com Page 5 of 6

AOD1N60/AOU1N60/AOI1N60 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 VVddss EE AA RR == 11//22 LLII AARR BBVVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs Vdd RM VDC Vdd - Vds Ig Rev 5: Aug 2011 www.aosmd.com Page 6 of 6