AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary The AOT2608L/AOB2608L uses Trench MOSFET VDS 60V technology that is uniquely optimized to provide the most ID (at VGS=10V) 72A efficient high frequency switching performance. Both R (at V =10V) < 8.0mW (< 7.6mW *) DS(ON) GS conduction and switching power losses are minimized due to an extremely low combination of R , Ciss and DS(ON) Coss.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g TO220 TO-263 Top View Bottom View Top View D2PAK Bottom View D D D D D G DS DG S G S G S G S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 6600 VV DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 72 Current G T =100°C D 54 A C Pulsed Drain Current C I 180 DM Continuous Drain TA=25°C I 11 A Current T =70°C DSM 8.5 A Avalanche Current C I 50 A AS Avalanche energy L=0.1mH C E 125 mJ AS T =25°C 100 C P W Power Dissipation B T =100°C D 50 C T =25°C 2.1 A P W Power Dissipation A T =70°C DSM 1.3 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 12 15 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 48 60 °C/W Maximum Junction-to-Case Steady-State RqJC 1.2 1.5 °C/W * Surface mount package TO263 Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 6

AOT2608L/AOB2608L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 60 V DSS D GS V =60V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V =±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2.6 3.1 3.6 V GS(th) DS GS，D I On state drain current V =10V, V =5V 180 A D(ON) GS DS V =10V, I =20A 6.6 8 GS D mW TO220 T=125°C 11.4 14 R Static Drain-Source On-Resistance J DS(ON) V =10V, I =20A GS D 6.3 7.6 mW TO263 g Forward Transconductance V =5V, I =20A 75 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current G 72 A S DYNAMIC PARAMETERS C Input Capacitance 2995 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 270 pF oss GS DS C Reverse Transfer Capacitance 10.5 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.3 0.6 0.9 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 38.5 55 nC g Q Gate Source Charge V =10V, V =30V, I =20A 14 nC gs GS DS D Q Gate Drain Charge 3.5 nC gd t Turn-On DelayTime 15 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==3300VV,, RR ==11..55WW ,, 1100 nnss r GS DS L t Turn-Off DelayTime R =3W 25 ns D(off) GEN t Turn-Off Fall Time 2.5 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 24 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 115 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6

AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V V =5V DS 100 6V 80 7V 80 5V 60 A) 60 A) I(D I(D 40 125°C 40 Vgs=4.5V 20 25°C 20 0 0 0 1 2 3 4 5 2 3 4 5 6 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 10 2.4 2.2 e c an 2 VGS=10V WWWWm) 8 Resist 1.8 ID=20A 17 (N) On- 1.6 5 RDS(O 6 VGS=10V alized 1.4 120 m 1.2 or N 1 4 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 Figure 3: On-ResistanceID v(sA.) Drain Current and Gate Temperature (°C) 0 Voltage (Note E) Figure 4: On-Resistance vs. Junctio1n8 Temperature ((NNoottee EE)) 18 1.0E+02 I =20A D 1.0E+01 15 125°C 40 1.0E+00 WWWWm) 12 A) 1.0E-01 125°C (DS(ON) 9 I(S 1.0E-02 R 1.0E-03 25°C 6 25°C 1.0E-04 1.0E-05 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 Figure 5: On-ResistVanGSce(V vosl.t sG)ate-Source Voltage Figure 6: Body-DioVdSDe (CVhoaltrsa)cteristics (Note E) (Note E) Rev 1 : Mar. 2012 www.aosmd.com Page 3 of 6

AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 V =30V DS I =20A D 3000 8 C iss 2500 F) p V(Volts)GS 46 pacitance ( 12500000 a C 1000 Coss 2 500 C rss 0 0 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 500 T =175°C J(Max) T =25°C 100.0 1100mmss 400 C R DS(ON) limited 100m s s) 10.0 W) 300 17 (AmpD 1.0 DC 110mmss ower ( 200 52 I P T =175°C 10 J(Max) T =25°C 0.1 C 100 0.0 0 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case Safe Operating Area (Note F) (Note F) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJC=1.5°C/W 40 d si ee zR malimal Norher 0.1 PD JCT Single Pulse Zqqqq T on T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1 : Mar. 2012 www.aosmd.com Page 4 of 6

AOT2608L/AOB2608L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 120 nt e Curr W)100 valanche 100 TA=25°C TA=100°C sipation ( 6800 A s eak TA=150°C er Di 40 P w A) Po (AR TA=125°C 20 I 10 0 1 10 100 1000 0 25 50 75 100 125 150 175 Time in avalanche, tAm(mmm s) TCASE(°C) Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F) (Note C) 80 1000 T =25°C A 70 A) 60 g I(D 50 W) 100 17 nt ratin 40 ower ( 52 e 30 P 10 urr 10 C 20 10 0 1 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 0100 1000 TCASE(°C) Pulse Width (s) 18 FFiigguurree 1144:: CCuurrrreenntt DDee--rraattiinngg ((NNoottee FF)) FFiigguurree 1155:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- Ambient (Note H) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=60°C/W 40 Trasta d si ee malizmal R 0.1 Norher PD AT 0.01 J Zqqqq Single Pulse T on T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : Mar. 2012 www.aosmd.com Page 5 of 6

AOT2608L/AOB2608L Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 1 : Mar. 2012 www.aosmd.com Page 6 of 6