AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been VDS 700V@150℃ fabricated using an advanced high voltage MOSFET I (at V =10V) 10A D GS process that is designed to deliver high levels of R (at V =10V) < 0.75W performance and robustness in popular AC-DC DS(ON) GS applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add "L" suffix to part number: AOT10N60L & AOTF10N60L & AOB10N60L Top View TO-263 TO-220 TO-220F D2PAK D D G S D S S G G D G S AOT10N60 AOTF10N60 AOB10N60 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Units Drain-Source Voltage V 600 V DS GGaattee--SSoouurrccee VVoollttaaggee VV ±±3300 VV GGSS Continuous Drain TC=25°C I 10 10* Current T =100°C D 7.2 7.2* A C Pulsed Drain Current C I 36 DM Avalanche Current C I 4.4 A AR Repetitive avalanche energy C E 290 mJ AR Single plused avalanche energy G E 580 mJ AS MOSFET dv/dt ruggedness 45 dv/dt V/ns Peak diode recovery dv/dt 5 T =25°C 250 50 W C P Power Dissipation B Derate above 25oC D 2 0.4 W/ oC Junction and Storage Temperature Range T, T -55 to 150 °C J STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T 300 °C L Thermal Characteristics Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Units Maximum Junction-to-Ambient A,D RqJA 65 65 °C/W Maximum Case-to-sink A RqCS 0.5 -- °C/W Maximum Junction-to-Case RqJC 0.5 2.5 °C/W * Drain current limited by maximum junction temperature. Rev.8.0: March 2014 www.aosmd.com Page 1 of 6

AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250µA, V =0V, T=25°C 600 BV Drain-Source Breakdown Voltage D GS J DSS I =250µA, V =0V, T=150°C 700 V D GS J BV Breakdown Voltage Temperature /∆TDJSS Coefficient ID=250µA, VGS=0V 0.65 V/ oC V =600V, V =0V 1 IDSS Zero Gate Voltage Drain Current VDS=480V, TG=S125°C 10 m A DS J I Gate-Body leakage current V =0V, V =±30V ±100 nA GSS DS GS V Gate Threshold Voltage V =5V I =250m A 3 4 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =5A 0.6 0.75 W DS(ON) GS D g Forward Transconductance V =40V, I =5A 15 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.73 1 V SD S GS I Maximum Body-Diode Continuous Current 10 A S I Maximum Body-Diode Pulsed Current 36 A SM DYNAMIC PARAMETERS C Input Capacitance 1100 1320 1600 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 105 130 160 pF oss GS DS C Reverse Transfer Capacitance 7.5 9.3 11 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3 3.8 6 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 31 40 nC g Q Gate Source Charge V =10V, V =480V, I =10A 6 10 nC gs GS DS D Q Gate Drain Charge 14.4 20 nC gd t Turn-On DelayTime 28 35 ns D(on) t Turn-On Rise Time V =10V, V =300V, I =10A, 66 80 ns r GS DS D tDD((ooffff)) Turn-Off DelayTime RG=25W 76 95 ns t Turn-Off Fall Time 64 80 ns f trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/m s,VDS=100V 290 350 ns Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/m s,VDS=100V 3.9 4.7 m C A. The value of RqJAis measured with the device in a still air environment with TA =25°C. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25°C. J D. The RqJAis the sum of the thermal impedence from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =4.4A, V =150V, R =25Ω, Starting T=25°C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: March 2014 www.aosmd.com Page 2 of 6

AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 10V V =40V 16 6.5V DS -55°C 10 12 6V A) A) I(D 8 I(D 125°C 1 4 V =5.5V 25°C GS 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VDS(Volts) VGS(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 1.4 3 e2.5 1.2 sistanc 2 VIDG=S5=A10V ) 1.0 Re W( n- N) O1.5 RDS(O 0.8 VGS=10V malized 1 or 0.6 N 0.5 0.4 0 0 4 8 12 16 20 24 -100 -50 0 50 100 150 200 ID(A) Temperature (°C) FFiigguurree 33:: OOnn--RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee FFiigguurree 44:: OOnn--RReessiissttaannccee vvss.. JJuunnccttiioonn TTeemmppeerraattuurree Voltage 1.2 1.0E+02 1.0E+01 d) 1.1 1.0E+4000 e maliz A) 1.0E-01 125°C Nor 1 I(S 1.0E-02 ( 25°C DSS V 1.0E-03 B 0.9 1.0E-04 0.8 1.0E-05 -100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 TJ (°C) Figure 6: Body-DioVdSDe (CVhoaltrsa)cteristics (Note E) Figure 5:Break Down vs. Junction Temperature Rev.8.0: March 2014 www.aosmd.com Page 3 of 6

AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V Ciss I =10A 12 D 1000 F) p C olts) 9 nce ( oss V a 100 (S cit VG 6 pa a C 10 3 C rss 0 1 0 10 20 30 40 50 0.1 1 10 100 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100 100 10m s 10 RlimDSit(eONd) 100m s 10 RDS(ON) 10m s ps) 1ms ps) limited 100m s Am 1 Am 1 1ms I(D DC 10ms I(D 10ms 0.1 TTJ(=M2ax5)=°15C0°C 0.1 TTJ(=M2ax5)=°15C0°C DC 01.s1s C C 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS(Volts) VDS(Volts) Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe OOppeerraattiinngg AArreeaa ffoorr AAOOTT1100NN6600//AAOOBB1100NN6600 ((NNoottee FF)) OOppeerraattiinngg AArreeaa ffoorr AAOOTTFF1100NN6600 ((NNoottee FF)) 12 10 A) (D 8 g I n ati 6 nt r e urr 4 C 2 0 0 25 50 75 100 125 150 TCASE(°C) Figure 11: Current De-rating (Note B) Rev.8.0: March 2014 www.aosmd.com Page 4 of 6

AOT10N60/AOB10N60/AOTF10N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 Transient stance 1 DTRJ=q,JPTCK=o=n0T/T.C5+°PCDM/W.ZqJC.RqJC IDn= d0e.5s,c e0n.3d,i n0g.1 o, r0d.e0r5, 0.02, 0.01, single pulse d si ee zR malimal 0.1 PD Norher JCT 0.01 Ton Zq T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT10N60/AOB10N60 (Note F) 10 D=T /T In descending order Transient stance 1 TRJq,JPCK=o=n2T.C5+°PCDM/W.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d si ee malizmal R 0.1 PD Norher ZqJCT 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF10N60 (Note F) Rev.8.0: March 2014 www.aosmd.com Page 5 of 6

AOT10N60/AOB10N60/AOTF10N60 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds E A R= 1/2 LI AR BVDSS Id Vds + Vgs VVggss VVDDCC VVdddd IIAARR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.8.0: March 2014 www.aosmd.com Page 6 of 6