AO4496 General Description Product Summary The AO4496 uses advanced trench technology to V (V) = 30V DS provide excellent R with low gate charge. This I = 10A (V = 10V) DS(ON) D GS device is suitable for use as a DC-DC converter R < 19.5mΩ (V = 10V) DS(ON) GS application. R < 26mΩ (V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D DD D D G G S S S S Absolute Maximum Ratings T =25°C unless otherwise noted J Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±20 V GS Continuous Drain T =25°C 10 A Current A T =70°C I 7.5 A D A Pulsed Drain Current B I 50 DM Avalanche Current G I 17 AR Repetitive avalanche energy L=0.1mH G E 14 mJ AR T =25°C 3.1 Power Dissipation A A PD W T =70°C 2.0 A Junction and Storage Temperature Range T , T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W R Maximum Junction-to-Ambient A Steady State q JA 59 75 °C/W Maximum Junction-to-Lead C Steady State Rq JL 16 24 °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4496 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I = 250m A, V = 0V 30 V DSS D GS V = 30V, V = 0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T = 55°C 5 J IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V ±100 nA V Gate Threshold Voltage V = V I = 250m A 1.4 1.8 2.5 V GS(th) DS GS D I On state drain current V = 10V, V = 5V 50 A D(ON) GS DS V = 10V, I = 10A 16 19.5 GS D R Static Drain-Source On-Resistance T =125°C 24 29 mW DS(ON) J V = 4.5V, I = 7.5A 21 26 GS D g Forward Transconductance V = 5V, I = 10A 30 S FS DS D V Diode Forward Voltage I = 1A,V = 0V 0.76 1 V SD S GS I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 550 715 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 110 pF oss GS DS C Reverse Transfer Capacitance 55 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3 4 4.9 W g GS DS SSWWIITTCCHHIINNGG PPAARRAAMMEETTEERRSS Q (10V) Total Gate Charge 9.8 13 nC g Q (4.5V) Total Gate Charge 4.6 6.1 nC g V =10V, V =15V, I =10A GS DS D Q Gate Source Charge 1.8 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R = 1.5W , 3.2 ns r GS DS L t Turn-Off DelayTime R =3W 24 ns D(off) GEN t Turn-Off Fall Time 6 ns f trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/m s 22 29 ns Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/m s 14 nC A: The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤300m s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t ≤10s thermal resistance rating. 0 G. E and I ratings are based on low frequency and duty cycles to keep T=25C. AR AR j Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 V = 5V 10V DS 4.5V 4V 40 40 30 30 A) A) I(D 20 3.5V I(D 20 125°C V = 3V 10 GS 10 25°C 0 0 0 1 2 3 4 5 1 2 3 4 5 V (Volts) V (Volts) DS GS Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics 26 1.8 24 VGS= 4.5V ance 1.6 VIDG=S 1=0 1A0V st WWWW(m)N)N) 222020 On-ResiOn 1.4 VIDG=S 7=. 54A.5V RDS(ODS(O 18 VGS= 10V malized malized 1.2 16 NorNor 1.0 14 0.8 I =-6.5A, dI/dt=100A/m s 0 5 10 15 F 20 25 30 0 25 50 75 100 125 150 175 ID(A) Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature Gate Voltage 50 I = 10A 45 D 1E+01 40 1E+00 ) 35 1E-01 WWWW(m 30 125°C A) ON) (S1E-02 125°C RDS( 25 I1E-03 20 25°C 1E-04 25°C 15 1E-05 10 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage V (Volts) SD Figure 6: Body-Diode Characteristics AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 V = 15V DS I = 10A D 8 600 Ciss F) p Volts) 6 ance ( 400 V(GS 4 pacit a C 200 C 2 oss C rss 0 0 0 2 4 6 8 10 0 5 10 15 20 25 30 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000 10m s TJ(Max)=150°C T =25°C A 10 100m s 100 s)s) W)W) (Amp(AmpD 11 RlliimmDDSSiitt((eeOOddNN)) 11m0mss ower (ower ( I 100mss PP 10 0.1 10s T =150°C DC J(Max) T =25°C A 0.01 I =-6.5A, dI/dt=100A/m s 1 F 0.1 1 10 100 0.0001 0.01 1 100 VDS(Volts) Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction- Operating Area (Note E) to-Ambient (Note E) 10 D=T /T In descending order on sient ce 1 TRJq,JPAK==7T5A°+PCD/MW.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nn aa Trst d si ee zR 0.1 THISali Pal RODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL mm COMorPerONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DPODES NOT ASSUME ANY LIABILITY ARISING Nh OUT AOTF SU0C.H01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, J FUNZCqqqqTIONS AND RELIABILITY WITHSOiUngTl eN POuTlsICeE. Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm

AO4496 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds E A R= 1/2 LI AR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs Vdd RM VDC Vdd - Vds Ig AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd.. wwwwww..aaoossmmdd..ccoomm