AO4438 60V N-Channel MOSFET General Description Product Summary The AO4438 uses advanced trench technology to V (V) = 60V DS provide excellent R and low gate charge. This I = 8.2A (V = 10V) DS(ON) D GS device is suitable for use as a load switch or in PWM R < 22mW (V = 10V) DS(ON) GS applications. R < 27mW (V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S SS S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V ±20 V GS Continuous Drain T =25°C 8.2 A Current A T =70°C I 6.6 A A D Pulsed Drain Current B I 40 DM T =25°C 3.1 A P W D Power Dissipation T =70°C 2 A Junction and Storage Temperature Range T , T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 24 40 °C/W R Maximum Junction-to-Ambient A Steady-State q JA 54 75 °C/W Maximum Junction-to-Lead C Steady-State Rq JL 21 30 °C/W Rev.5. 0: August 2013 www.aosmd.com Page 1 of 4

AO4438 N Channel Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 60 V DSS D GS V =60V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T =55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2 2.3 3 V GS(th) DS GS D V =10V, I =8.2A 16.3 22 GS D mW R Static Drain-Source On-Resistance T =125°C 30 40 DS(ON) J V =4.5V, I =7.6A 20 27 mW GS D g Forward Transconductance V =5V, I =8.2A 24 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 1920 2300 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 155 pF oss GS DS C Reverse Transfer Capacitance 116 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.65 0.8 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 47.6 58 nC g Q (4.5V) Total Gate Charge 24.2 30 nC g V =10V, V =30V, I =8.2A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 14.4 nC gd t Turn-On DelayTime 8.2 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==3300VV,, RR ==33..66WW ,, 55..55 nnss rr GGSS DDSS LL t Turn-Off DelayTime R =3W 29.7 ns D(off) GEN t Turn-Off Fall Time 5.2 ns f trr Body Diode Reverse Recovery Time IF=8.2A, dI/dt=100A/m s 34 41 ns Qrr Body Diode Reverse Recovery Charge IF=8.2A, dI/dt=100A/m s 53 nC A: The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE RReevv..55.. 00:: AAuugguusstt 22001133 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 44

AO4438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 30 4V 10V 25 4.5V V =5V DS 6V 125°C 20 20 (A)D (A)D15 I I V =3.5V 10 GS 10 25°C 5 0 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 V (Volts) DS V (Volts) Fig 1: On-Region Characteristics GS Figure 2: Transfer Characteristics 22 2.2 20 VGS=4.5V stance 1.82 VIDG=S8=.21A0V ) si e WWWWm R 1.6 R(DS(ON) 18 VGS=10V zed On- 1.4 VIDG=S7=.64A.5V ali 1.2 16 m or N 1 1144 00..88 00 55 1100 1155 2200 00 2255 5500 7755 110000 112255 115500 117755 I (A) Temperature (°C) D Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature Gate Voltage 50 1.0E+01 I =8.2A D 1.0E+00 40 125°C 125°C 1.0E-01 ) WWWWm ( 30 A) N) ( 1.0E-02 S(O IS 25°C D R 20 25°C 1.0E-03 1.0E-04 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 V (Volts) GS V (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage SD Figure 6: Body-Diode Characteristics RReevv..55.. 00:: AAuugguusstt 22001133 wwwwww..aaoossmmdd..ccoomm PPaaggee 33 ooff 44

AO4438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 3500 V =30V DS I =8.2A 3000 D 8 C F) 2500 iss olts) 6 ce (p 2000 V n (GS 4 cita 1500 V a p C a oss C 1000 2 Crss 500 0 0 0 10 20 30 40 50 0 5 10 15 20 25 30 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 40 T =150°C J(Max) R 100m s 10m s TA=25°C limDSit(eOdN) 30 10.0 1ms s) W) (AmpD 1s 100.1mss ower ( 20 I 1.0 10s P T =150°C 10 J(Max) T =25°C DC A 00 00..11 00..000011 00..0011 00..11 11 1100 110000 11000000 00..11 11 1100 110000 PPuullssee WWiiddtthh ((ss)) V (Volts) DS Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Ambient (Note E) Operating Area (Note E) 10 D=T /T In descending order on nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience RqJA=40°C/W Trasta 1 d si ee zR malimal Norher 0.1 PD AT J Zqqqq T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance RReevv..55.. 00:: AAuugguusstt 22001133 wwwwww..aaoossmmdd..ccoomm PPaaggee 44 ooff 44