AO4430 30V N-Channel MOSFET General Description Product Summary The AO4430 uses advanced trench technology to provide V (V) = 30V DS excellent R , shoot-through immunity, body diode I = 18A (V = 10V) DS(ON) D GS characteristics and ultra-low gate resistance. This device is R < 5.5mW (V = 10V) DS(ON) GS ideally suited for use as a low side switch in Notebook CPU R < 7.5mW (V = 4.5V) DS(ON) GS core power conversion. 100% UIS Tested RoHS and Halogen-Free Compliant 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±20 V GS Continuous Drain T =25°C 18 A Current AF T =70°C I 15 A A D Pulsed Drain Current B I 80 DM T =25°C 3 A P W D Power Dissipation T =70°C 2.1 A Avalanche Current B I 30 A AR Repetitive avalanche energy 0.3mH B E 135 mJ AR Junction and Storage Temperature Range T , T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W Maximum Junction-to-Ambient A Steady-State RqJA 59 75 °C/W Maximum Junction-to-Lead C Steady-State RqJL 16 24 °C/W Rev.6.0: May 2015 www.aosmd.com Page 1 of 5

Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T =55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1 1.8 2.5 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 80 A D(ON) GS DS V =10V, I =18A 4.7 5.5 GS D mW R Static Drain-Source On-Resistance T =125°C 6.5 8 DS(ON) J V =4.5V, I =15A 6.2 7.5 mW GS D g Forward Transconductance V =5V, I =18A 82 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 4.5 A S DYNAMIC PARAMETERS C Input Capacitance 4660 6060 7270 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 425 638 960 pF oss GS DS C Reverse Transfer Capacitance 240 355 530 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.2 0.45 0.9 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 80 103 124 nC g Q (4.5V) Total Gate Charge 37 48 58 nC g V =10V, V =15V, I =18A GS DS D Q Gate Source Charge 18 nC gs QQ GGaattee DDrraaiinn CChhaarrggee 1155 nnCC ggdd t Turn-On DelayTime 12 16 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.83W , 8 12 ns r GS DS L t Turn-Off DelayTime R =3W 51.5 70 ns D(off) GEN t Turn-Off Fall Time 8.8 14 ns f trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/m s 33.5 44 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/m s 22 30 nC A: The value of RqJAis measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The value in any given application depends on the user's specific board design. A B: Repetitive rating, pulse width limited by junction temperature. C. The RqJAis the sum of the thermal impedence from junction to lead R qJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t≤10s junction to ambient thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv..66..00:: MMaayy 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 4.5V VDS=5V 3.5V 40 40 125°C (A)D 30 3.0V (A)D 30 I I 20 20 25°C 10 10 V =2.5V GS 0 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 VDS(Volts) VGS(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 7.0 1.6 6.5 VGS=4.5V ance 1.4 ID=18A VGS=4.5V 6.0 st ) esi V =10V Wm 5.5 R GS (N) On-On 1.2 RDS(O 45..50 VGS=10V alized alized mm 1 oror 44..00 NN 33..55 00..88 0 20 40 60 80 100 0 25 50 75 100 125 150 175 I (A) Temperature (°C) D Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature Gate Voltage 16 1.0E+02 1.0E+01 12 1.0E+00 I =18A ) D W(mN) 8 125°C (A) 1.0E-01 125°C 25°C O S S( I 1.0E-02 D R 4 25°C 1.0E-03 1.0E-04 0 2 4 6 8 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 V (Volts) Figure 5: On-ResistanGSce vs. Gate-Source Voltage VSD(Volts) Figure 6: Body-Diode Characteristics RReevv..66..00:: MMaayy 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 33 ooff 55

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 V =15V DS I =18A D 8 C 6000 iss F) olts) 6 ce (p (VGS 4 citan 4000 V a p a C 2000 2 C rss C oss 0 0 0 20 40 60 80 100 120 0 5 10 15 20 25 30 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 100 R limDSit(eOdN) 100m s 10m s TJ(Max)=150°C T =25°C 1ms 80 A 10ms 10.0 0.1s s) W) 60 mp 1s r ( (AD 10s owe 40 I 1.0 DC P TT ==115500°CC 2200 JJ((MMaaxx)) TT ==2255°°CC AA 00 00..11 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 Pulse Width (s) V (Volts) DS Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Ambient (Note E) Operating Area (Note E) 10 D=T /T In descending order on nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsience RqJA=75°C/W Trasta 1 d si ee zR malimal Norher 0.1 PD AT J Zq T on Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance RReevv..66..00:: MMaayy 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 44 ooff 55

Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff UUnnccllaammppeedd IInndduuccttiivvee SSwwiittcchhiinngg ((UUIISS)) TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss LL 2 Vds E A R = 1/2 LI AR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs Vdd RM VDC Vdd - Vds Ig RReevv..66..00:: MMaayy 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 55 ooff 55