AO4402 20V N-Channel MOSFET General Description Product Summary The AO4402 combines advanced trench MOSFET VDS 20V technology with a low resistance package to provide I (at V =4.5V) 20A D GS extremely low RDS(ON). This device is ideal for load switch R (at V =4.5V) < 5.5mW DS(ON) GS and battery protection applications. R (at V =2.5V) < 7mW DS(ON) GS 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V ±12 V GS Continuous Drain TA=25°C I 20 Current T =70°C D 16 A A Pulsed Drain Current C I 140 DM Avalanche Current C I , I 57 A AS AR Avalanche energy L=0.1mH C E , E 162 mJ AS AR T =25°C 3.1 A P W Power Dissipation B T =70°C D 2 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 59 75 °C/W Maximum Junction-to-Lead Steady-State RqJL 16 24 °C/W Rev 1: Nov 2010 www.aosmd.com Page 1 of 6

AO4402 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 20 V DSS D GS V =20V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±12V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 0.5 1 1.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 140 A D(ON) GS DS V =4.5V, I =20A 4.6 5.5 GS D mW R Static Drain-Source On-Resistance T=125°C 5.8 7 DS(ON) J V =2.5V, I =18A 5.5 7 mW GS D g Forward Transconductance V =5V, I =20A 105 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.6 1 V SD S GS I Maximum Body-Diode Continuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 3080 3860 4630 pF iss C Output Capacitance V =0V, V =10V, f=1MHz 520 740 960 pF oss GS DS C Reverse Transfer Capacitance 350 580 810 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.4 2.1 W g GS DS SWITCHING PARAMETERS Q (4.5V) Total Gate Charge 28 36 43 nC g Q Gate Source Charge V =10V, V =10V, I =20A 7 9 11 nC gs GS DS D Q Gate Drain Charge 7 12 17 nC gd t Turn-On DelayTime 7 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =0.5W , 8 ns r GS DS L t Turn-Off DelayTime R =3W 70 ns D(off) GEN t Turn-Off Fall Time 18 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 13 17 20 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 29 36 43 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤ 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C.Maximum avalanche current limited by tester capability. J D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov 2010 www.aosmd.com Page 2 of 6

AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 V =5V DS 80 60 60 I (A)D 40 I(A)D40 125°C 25°C 20 20 0 0 0 1 2 3 4 5 0.5 1 1.5 2 2.5 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 10 1.4 e c 8 n a WWWWR (m)DS(ON) 46 VVGGS=S=24.5.5VV alized On-Resist 1.12 117520 m 2 or N 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 0 I (A) Temperature (°C) 18 D Figure 4: On-Resistance vs. Junction Temperature Figure 3: On-Resistance vs. Drain Current and (Note E) Gate Voltage (Note E) 10 1.0E+02 I =20A 9 D 1.0E+01 40 8 1.0E+00 ) WWWWm 7 A) 1.0E-01 (ON) 6 125°C I (S 1.0E-02 DS( R 5 1.0E-03 4 1.0E-04 25°C 3 1.0E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) (Note E) Figure 6: Body-Diode Characteristics (Note E) Rev 1: Nov 2010 www.aosmd.com Page 3 of 6

AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 V =10V 6000 DS 8 ID=20A F)5000 p s) 6 ce (4000 olt an V (VGS 4 apacit3000 C 2000 C oss 2 1000 0 00 Crss 5 10 15 20 0 20 40 60 80 100 V (Volts) Q (nC) DS g Figure 8: Capacitance Characteristics Figure 7: Gate-Charge Characteristics 1000.0 1000.0 nt e urr 100.0 C e h valanc 100.0 Amps) 10.0 ak A I (D 1.0 10ms e P A) 0.1 (R A I 0.0 10.0 0.01 0.1 1 10 100 1 10 100 1000 Time in avalanche, t m(mmm s) A Figure 9: Single Pulse Avalanche capability (Note V (Volts) DS C) 10000 T =25°C A 1000 W) er ( 100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 1: Nov 2010 www.aosmd.com Page 4 of 6

AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D=T /T In descending order on ent TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Transi stance 1 RqJA=75°C/W d si e e maliz mal R 0.1 Nor her P AT 0.01 D J Zqqqq Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Nov 2010 www.aosmd.com Page 5 of 6

AO4402 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 1: Nov 2010 www.aosmd.com Page 6 of 6