AO4312 36V N-Channel MOSFET General Description Product Summary The AO4312 uses trench MOSFET technology that is VDS 36V uniquely optimized to provide the most efficient high I (at V =10V) 23A D GS frequency switching performance.Power losses are R (at V =10V) < 4.5mW DS(ON) GS minimized due to an extremely low combination of R (at V = 4.5V) < 6.2mW R and Crss.In addition,switching behavior is well DS(ON) GS DS(ON) controlled with a "Schottky style" soft recovery body diode. 100% UIS Tested 100% R Tested g SSOOIICC--88 DD TToopp VViieeww BBoottttoomm VViieeww DD DD DD DD GG GG SS SS SS SS Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3366 VV DDSS Gate-Source Voltage V ±20 V GS Continuous Drain TA=25°C I 23 Current T =70°C D 18 A A Pulsed Drain Current C I 264 DM Avalanche Current C I , I 45 A AS AR Avalanche energy L=0.1mH C E , E 101 mJ AS AR T =25°C 4.2 A P W Power Dissipation B T =70°C D 2.7 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 25 30 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 50 60 °C/W Maximum Junction-to-Lead Steady-State RqJL 12 15 °C/W Rev 0: December 2010 www.aosmd.com Page 1 of 6

AO4312 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 36 V DSS D GS V =36V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.3 1.8 2.3 V GS(th) DS GS D I On state drain current V =10V, V =5V 264 A D(ON) GS DS V =10V, I =20A 3.4 4.5 GS D mW R Static Drain-Source On-Resistance T=125°C 5.2 6.9 DS(ON) J V =4.5V, I =20A 4.5 6.2 mW GS D g Forward Transconductance V =5V, I =20A 110 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 5.5 A S DYNAMIC PARAMETERS C Input Capacitance 1560 1952 2345 pF iss C Output Capacitance V =0V, V =18V, f=1MHz 475 685 890 pF oss GS DS C Reverse Transfer Capacitance 14 50 85 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.6 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 22 27.8 34 nC g Q (4.5V) Total Gate Charge 10 12.7 17 nC g V =10V, V =18V, I =20A GS DS D Q Gate Source Charge 4.3 nC gs Q Gate Drain Charge 4.7 nC gd t Turn-On DelayTime 7 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1188VV,, RR ==00..99WW ,, 33..11 nnss r GS DS L t Turn-Off DelayTime R =3W 26 ns D(off) GEN t Turn-Off Fall Time 4.5 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 13 17 21 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 30 38.5 47 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: December 2010 www.aosmd.com Page 2 of 6

AO4312 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 110000 110000 1100VV 44VV 44..55VV 33..55VV VVDDSS==55VV 8800 8800 6600 6600 A)A) 33VV A)A) I(I(DD 4400 I(I(DD 4400 112255°°CC 2255°°CC 2200 2200 VV ==22..55VV GGSS 00 00 00 11 22 33 44 55 00 11 22 33 44 55 66 FFiigg 11:: OOnn--RReeggiiooVVnnD D CCSShh((VVaaororaallttccsstt))eerriissttiiccss ((NNoottee EE)) FFiigguurree 22:: TTrraannssffeeVVrrGG CCSS((hhVVaaoorrllaattsscc))tteerriissttiiccss ((NNoottee EE)) 1188 22 1166 ee )) 11112424 VVGGSS==44..55VV esistancesistanc 1111....6868 VIVIDDGG==SS22==0011AA00VV WWWWWWWWR(mR(mDS(ON)DS(ON) 11686800 VVGGSS==1100VV alized On-Ralized On-R 1111....2424 117520 mm VV ==44..55VV 44 NorNor 11 IIDDGG==SS2200AA 22 00 00..88 00 55 1100 1155 2200 2255 3300 00 2255 5500 7755 110000 112255 115500 117755 220000 IIDD((AA)) TTeemmppeerraattuurree ((°°CC)) 0 FFiigguurree 33:: OOnn--RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee VVoollttaaggee ((NNoottee EE)) FFiigguurree 44:: OOnn--RReessiissttaannccee vvss.. JJuunnccttiioonn1 8TTeemmppeerraattuurree ((NNoottee EE)) 12 1.0E+02 I =20A D 1.0E+01 9 40 1.0E+00 WWWWm) 125°C A) 1.0E-01 125°C ( 6 ( ON) IS 1.0E-02 DS( 25°C R 1.0E-03 3 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 0: December 2010 www.aosmd.com Page 3 of 6

AO4312 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 22880000 VV ==1188VV DDSS 88 II ==2200AA 22440000 DD CC iissss F)F) 22000000 pp V(Volts)V(Volts)GSGS 4646 Capacitance (Capacitance ( 1111262600000000 CCoossss 880000 22 440000 CC rrssss 00 00 00 55 1100 1155 2200 2255 3300 00 66 1122 1188 2244 3300 3366 QQ ((nnCC)) VV ((VVoollttss)) gg DDSS FFiigguurree 77:: GGaattee--CChhaarrggee CChhaarraacctteerriissttiiccss FFiigguurree 88:: CCaappaacciittaannccee CChhaarraacctteerriissttiiccss 11000000..00 11000000..00 he Current he Current 110000..00 TTAA==2255°°CC TTAA==110000°°CC 110000..00 RlRliimmDDSSiitt((eeOOddNN)) 11110000m0m0mmssss valancvalanc TTAA==115500°°CC Amps)Amps) 1100..00 1111m0m0mmssss eak Aeak A 1100..00 TTAA==112255°°CC I(I(DD 11..00 110000mmss PP TT ==115500°°CC A) A) 00..11 TTJJ((==MM22aaxx55))°°CC DDCC 1100ss ((R R AA AA II 00..00 11..00 00..0011 00..11 11 1100 110000 11 1100 110000 11000000 TTiimmee iinn aavvaallaanncchhee,, tt mm((mmmmmm ss)) VVDDSS((VVoollttss)) AA FFiigguurree 1122:: SSiinnggllee PPuullssee AAvvaallaanncchhee ccaappaabbiilliittyy ((NNoottee FFiigguurree 1100:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd CC)) SSaaffee OOppeerraattiinngg AArreeaa ((NNoottee FF)) 10000 T =25°C A 1000 W) er ( 100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: December 2010 www.aosmd.com Page 4 of 6

AO4312 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 DD==TToonn//TT IInn ddeesscceennddiinngg oorrddeerr nt nt TTJJ,,PPKK==TTAA++PPDDMM..ZZqqJJAA..RRqqJJAA DD==00..55,, 00..33,, 00..11,, 00..0055,, 00..0022,, 00..0011,, ssiinnggllee ppuullssee TransieTransiestancestance 11 RRqqJJAA==6600°°CC//WW d d sisi eeee malizmalizmal Rmal R 00..11 NorNorAATherTher 00..0011 PPDD JJ ZZqqqqqqqq SSiinnggllee PPuullssee TT oonn TT 00..000011 00..0000000011 00..00000011 00..000011 00..0011 00..11 11 1100 110000 11000000 PPuullssee WWiiddtthh ((ss)) FFiigguurree 1122:: NNoorrmmaalliizzeedd MMaaxxiimmuumm TTrraannssiieenntt TThheerrmmaall IImmppeeddaannccee ((NNoottee FF)) 4 Rev 0: December 2010 www.aosmd.com Page 5 of 6

AO4312 GGaattee CChhaarrggee TTeesstt CCiirrccuuiitt && WWaavveeffoorrmm VVggss QQgg ++ 1100VV ++ VVDDCC QQggss QQggdd -- VVddss VVDDCC -- DDUUTT VVggss IIgg CChhaarrggee RReessiissttiivvee SSwwiittcchhiinngg TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss RRLL VVddss VVddss 9900%% ++ VVggss DDUUTT VVdddd VVDDCC RRgg -- 1100%% VVggss VVggss ttdd((oonn)) ttrr ttdd((ooffff)) ttff ttoonn ttooffff UUnnccllaammppeedd IInndduuccttiivvee SSwwiittcchhiinngg ((UUIISS)) TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss LL 22 VVddss EEAA RR == 11//22 LLIIAARR BBVVDDSSSS IIdd VVddss ++ VVggss Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 0: December 2010 www.aosmd.com Page 6 of 6