AO3434A 30V N-Channel MOSFET General Description Product Summary The AO3434A combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide I (at V =10V) 4A D GS extremely low RDS(ON). This device is ideal for load switch R (at V =10V) < 52mW DS(ON) GS and battery protection applications. R (at V =4.5V) < 60mW DS(ON) GS R (at V =2.5V) < 78mW DS(ON) GS Typical ESD protection HBM Class 3A SOT23 Top View Bottom View D D D G G S S G S Absolute Maximum Ratings T =25°C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±12 V GS Continuous Drain TA=25°C I 4 Current T =70°C D 3 A A Pulsed Drain Current C I 20 DM T =25°C 1.4 A P W Power Dissipation B T =70°C D 0.9 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 100 125 °C/W Maximum Junction-to-Lead Steady-State RqJL 63 80 °C/W Rev 1: Sep. 2012 www.aosmd.com Page 1 of 5

AO3434A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V =±10V ±10 m A GSS DS GS V Gate Threshold Voltage V =V I =250m A 0.7 1.05 1.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A D(ON) GS DS V =10V, I =4A 42 52 GS D mW T=125°C 66 82 R Static Drain-Source On-Resistance J DS(ON) V =4.5V, I =3A 47 60 mW GS D V =2.5V, I =2A 59 78 mW GS D g Forward Transconductance V =5V, I =4A 15 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 1.5 A S DYNAMIC PARAMETERS C Input Capacitance 245 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 35 pF oss GS DS C Reverse Transfer Capacitance 20 pF rss R Gate resistance V =0V, V =0V, f=1MHz 5 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 5.7 10 nC g Q (4.5V) Total Gate Charge 2.6 5 nC g V =10V, V =15V, I =4A GS DS D Q Gate Source Charge 0.5 nC gs Q Gate Drain Charge 1.0 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 22 nnss D(on) t Turn-On Rise Time V =10V, V =15V, R =3.75W , 3.5 ns r GS DS L t Turn-Off DelayTime R =3W 22 ns D(off) GEN t Turn-Off Fall Time 3.5 ns f trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/m s 6.5 ns Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/m s 7.5 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Sep. 2012 www.aosmd.com Page 2 of 5

AO3434A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V V =5V 4.5V DS 15 15 2.5V A) 10 A) 10 I(D I(D 125°C 5 5 25°C V =2.0V GS 0 0 0 1 2 3 4 5 0 1 2 3 4 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 100 1.8 V =4.5V GS e I =3A nc 1.6 D 80 a WWWW(m)N) 60 VGS=2.5V On-Resist 1.4 VIDG=S4=A10V 175 RDS(O VGS=4.5V alized 1.2 VGS=2.5V120 40 orm 1 ID=2A V =10V N GS 20 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 ID(A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Figure 4: On-Resistance vs. Junction1 8Temperature ((NNoottee EE)) 120 1.0E+02 I =4A D 1.0E+01 100 40 1.0E+00 WWWWm) 80 125°C A) 1.0E-01 125°C ( ( ON) IS 1.0E-02 DS( 60 R 1.0E-03 25°C 40 1.0E-04 25°C 20 1.0E-05 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V (Volts) V (Volts) GS SD Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev 1: Sep. 2012 www.aosmd.com Page 3 of 5

AO3434A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 V =15V DS ID=4A 350 8 300 F) Ciss V(Volts)GS 46 pacitance (p 122505000 a C 100 C oss 2 50 C 0 0 rss 0 1 2 3 4 5 6 0 5 10 15 20 25 30 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 10000 T =25°C A 10m s 10.0 1000 I(Amps)D 1.0 RlimDSit(eOdN) 111m000msmss Power (W) 100 10 0.1 TJ(Max)=150°C 10s T =25°C A DC 1 0.0 1E-05 0.001 0.1 10 1000 0.01 0.1 1 10 100 VDS(Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee AAmmbbiieenntt ((NNoottee FF)) Operating Area (Note F) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJA=125°C/W d si ee malizmal R 0.1 Norher PD JAT 0.01 Single Pulse Zqqqq T on T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Sep. 2012 www.aosmd.com Page 4 of 5

AO3434A Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 1: Sep. 2012 www.aosmd.com Page 5 of 5