ADVANCED ALD4211/ALD4212 LINEAR DEVICES, INC. ALD4213 CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES GENERAL DESCRIPTION FEATURES The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog • 3V, 5V and – 5V supply operation switches specifically designed for low voltage, high speed applications • 0.2pC charge injection where 0.2pC charge injection, 200pf sampling capacitor, and picoamp • 200pF sampling capacitor leakage current are important analog switch operating characteristics. • pA leakage current These analog switches feature fast switching, low on-resistance and • 0.1m W power dissipation micropower consumption. • High precision • Rail to rail signal range TheALD4211/4212/4213 are designed for precision applications such as • Low On-resistance charge amplifiers, sample and hold amplifiers, data converter switches, • Break-before-make switching and programmable gain amplifiers. These switches are also excellent for low voltage micropower general purpose switching applications. BENEFITS APPLICATIONS INFORMATION • Five times faster signal capture • Low switching transients The ALD4211/4212/4213 operate with a standard single power supply • Low signal loss from +3V to +12Volts. Functionality extends down to a +2 volt power • Essentially no DC power consumption supply making it suitable for lithium battery or rechargeable battery • Full analog signal range from rail to rail operated systems where power, efficiency, and performance are • Flexible power supply range for battery important design considerations. Break-before-make switching is operated systems guaranteed with single supply operation. The ALD4211/4212/4213 may also be used with dual power supplies from – 1.5 to – 6 volts. APPLICATIONS With special charge balancing and charge cancellation circuitry on • Fast sample and hold chip the ALD4211/ALD4212/ALD4213 were developed for ultra low • Computer peripherals charge injection applications. Using a 200pF sampling capacitor, very • PCMCIA fast precise signal acquisition may be achieved. With ultra low • Low level signal conditioning circuits quiescent current, these switches interface directly to CMOS logic • Portable battery operated systems levels from microprocessor or logic circuits. On the board level, low • Analog signal multiplexer charge injection and fast operation may be achieved by using short • Programmable gain amplifiers leads, minimizing input and output capacitances, and by adequate • Switched capacitor circuits bypass capacitors placed on the board at the supply nodes. For more • Micropower based systems information, see Application Note AN4200. • Video/audio switches • Feedback control systems The ALD4211/ALD4212/ALD4213 are manufactured with Advanced Linear Devices enhanced ACMOS silicon gate CMOS process. They are designed also as linear cell elements in Advanced Linear Devices’ PIN CONFIGURATION/ BLOCK DIAGRAM “Function-Specific” ASIC. ORDERING INFORMATION IN1 1 16 IN2 Operating Temperature Range -55(cid:176) C to +125(cid:176) C -40(cid:176) C to +85(cid:176) C -40(cid:176) C to +85(cid:176) C COM1 2 15 COM2 16-Pin 16-Pin 16-Pin OUT1 3 14 OUT2 CERDIP Plastic Dip SOIC Package Package Package V- 4 13 V+ ALD4211 DC ALD4211 PC ALD4211 SC GND 5 12 NC ALD4212 DC ALD4212 PC ALD4212 SC ALD4213 DC ALD4213 PC ALD4213 SC OUT4 6 11 OUT3 LOGIC TABLE COM4 7 10 COM3 Input Logic Switch State IN4 8 9 IN3 ALD4211 ALD4212 ALD4213 DC, PC, SC PACKAGE Switch 1 / Switch 4 Switch 2 / Switch 3 0 On Off Off On 1 Off On On Off * Contact factory for industrial temperature range. © 2005.1 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to V- -0.3V to +13.2V GND -0.3V to +13.2V Terminal voltage range (any terminal) Note 1 (V- -0.3)V to (V+ +0.3)V Power dissipation 600 mW Operating temperature range PC, SC package -40(cid:176) C to +85(cid:176) C DC package -55(cid:176) C to +125(cid:176) C Storage temperature range -65(cid:176) C to +150(cid:176) C Lead temperature, 10 seconds +260(cid:176) C DC current (any terminal) 10mA POWER SUPPLY RANGE 4211/4212/4213 (PC,SC) 4211/4212/4213 (DC) Parameter Symbol Min Typ Max Min Typ Max Unit Supply VSUPPLY – 1.5 – 6.0 – 1.5 – 6.0 V Dual Supply Voltage 3.0 12.0 3.0 12.0 V Single Supply DC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +5.0V, V- = -5.0V GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) 4211/4212/4213 (DC) Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Analog Signal Range VA -5.0 5.0 -5.0 5.0 V On - Resistance RON 90 135 90 135 W VA = 0V IA = 1mA 120 190 -40(cid:176)C to +85(cid:176)C 140 210 -55(cid:176)C to +125(cid:176)C Change of On-Resistance D RON 16 16 % from -VS to +VS Change of On-Resistance D RON/D T 0.43 0.43 %/(cid:176)C with Temperature RON Match between 2 2 % Switches Off Com Leakage ICOML 50 100 50 100 pA VCOM = – 4.0V,VOUT = -/+4.0V Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Off Out Leakage IOUTL 50 100 50 100 pA VOUT = – 4.0V, VCOM = -/+4.0V Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C On Channel ID(ON) 50 100 50 100 pA Leakage Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Input High Voltage VIH 4.0 4.0 Logic "1" Input Low Voltage VIL 0.8 0.8 V Logic "0" Input High or IH Input Low Current IIL 10 10 nA Supply Current ISUPPLY 0.01 1 0.01 1 m A ALD4211/ALD4212 Advanced Linear Devices 2 ALD4213

AC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +5.0V, V- = -5.0V, GND = 0.0V unless otherwise specified 4211/4212/4213(PC) 4211/4212/4213(DC) 4211/4212/4213(SC) Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test Conditions Turn On Delay time tON 60 130 60 130 60 130 ns (Note 2) Turn Off Delay time tOFF 60 130 60 130 60 130 ns (Note 2) Charge Injection QINJ 0.2 1.0 0.2 1.0 0.2 1.0 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) Total Harmonic THD 0.05 0.05 0.05 % RL = 10K Distortion 0.01 0.01 0.01 RL = 100K Com/Out COM(OFF) Off Capacitance OUT(OFF) 3.0 3.0 3.0 pF Channel On Capacitance CDS (ON) 5.7 5.7 5.7 pF Pin to Pin Capacitance CPP 0.5 0.6 0.25 pF DC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) 4211/4212/4213 (DC) Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Analog Signal Range VA 0.0 +5.0 0.0 +5.0 V On - Resistance RON 195 280 195 280 W VA = 0V IA = 1mA 250 365 -40(cid:176)C to +85(cid:176)C 270 390 -55(cid:176)C to +125(cid:176)C Change of On-Resistance D RON 20 20 % from -VS to +VS Change of On-Resistance D RON/D T 0.43 0.43 %/(cid:176)C with Temperature RON Match 2 2 % Between Switches Off Com Leakage ICOML 50 100 50 100 pA VCOM = 1 to 4V,VOUT = 4 to 1V Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Off Out Leakage IOUTL 50 100 50 100 pA VOUT = 1 to 4V,VCOM = 4 to 1V Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C On Channel ID(ON) 50 100 50 100 pA Leakage Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Input High Voltage VIH 4.0 4.0 Logic "1" Input Low Voltage VIL 0.8 0.8 V Logic "0" Input High or IIH Input Low Current IIL 10 10 nA Supply Current ISUPPLY 0.01 1 0.01 1 m A Notes: 1. Voltage on any terminal must be less than (V+) + 0.3V and greater than (V-) - 0.3V, at all times including before power is applied and V+ =V- = 0.0V. Vsupply power supply needs to be sequenced on first on power turn-on and sequenced off last during power turn-off. 2. See Switching Time Test Circuit. Break-before-make time is not guaranteed. Turn on and turn off time may overlap. 3. Guaranteed by design. 4. See Charge Injection Test Circuit 5. See Off Isolation Test Circuit 6. See Crosstalk Test Circuit. 7. See switching time test circuit. ALD4211/ALD4212 Advanced Linear Devices 3 ALD4213

AC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test Conditions Turn On Delay time tON 85 170 85 170 85 170 ns (Note 7) Turn Off Delay time tOFF 46 90 46 90 46 90 ns (Note 7) Break-Before-Make Delay Time tBD 15 40 15 40 15 40 ns Charge Injection QINJ 0.2 1.0 0.2 1.0 0.2 1.0 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) Total Harmonic THD 0.05 0.05 0.05 % RL = 10K Distortion 0.01 0.01 0.01 RL = 100K Com/Out COM(OFF) Off Capacitance OUT(OFF) 3.0 3.0 3.0 pF Channel On CDS (ON) 5.7 5.7 5.7 pF Capacitance Pin to Pin CPP 0.5 0.6 0.25 pF Capacitance The ALD4211/ALD4212/ALD4213 feature very high The ALD4211/ALD4212/ALD4213 CMOS analog switches, precision due to these factors: when used with industry standard pinout connection, have the input and output pins reversed with the signal source 1. The analog switch has ultra low capacitive charge coupling input connected to OUT pins and COM pins used as output so that the charge stored on a 200pF sampling capacitor pins. In this connection and when used with 1,000pF or is minimally affected. greater value capacitors, or when connected to a DC current or resistive load, the switch would not be operating in an ultra 2. With special charge balancing and charge cancellation low charge injection mode. Typical charge injection, in this circuitry designed on chip, the ALD4211/ALD4212/ case, would be 5pC as the pin to pin capacitive coupling ALD4213 achieves ultra low charge injection of typically effect would dominate. In this connection, all the other only 0.2pC resulting in extremely low signal distortion to characteristics of the ALD4211/ALD4212/ALD4213 CMOS the external circuit. analog switches remain the same. 3. The analog switch switching transistors have pA leakage currents minimizing the droop rate of the sampling circuit. 4. The internal switch timing allows for the analog switch to turn off internally without producing any residual transistor channel charge injection, which may affect external circuits. With a low loss polystyrene or polypropylene sampling capacitor, long data retention times are possible without significant signal loss. ALD4211/ALD4212 Advanced Linear Devices 4 ALD4213

DC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) 4211/4212/4213 (DC) Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Analog Signal Range VA 0.0 3.0 0.0 3.0 V On - Resistance RON 500 700 500 700 W VA = 0V IA = 1mA 620 880 -40(cid:176)C to +85(cid:176) C 680 1000 -55(cid:176)C to +125(cid:176)C Change of On-Resistance D RON 43 43 % from -VS to +VS Change of On-Resistance D RON/D T 0.27 0.27 %/(cid:176)C with Temperature RON Match 2 2 % Between Switches Off Com ICOML 50 100 50 100 pA VCOM = 1 to 2V,VOUT = 2 to 1V Leakage Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Off Out IOUTL 50 100 50 100 pA VOUT = 1 to 2V,VCOM = 2 to 1V Leakage Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Channel On ID(ON) 50 100 50 100 pA Leakage Current 500 pA -40(cid:176)C to +85(cid:176)C 4000 pA -55(cid:176)C to +125(cid:176)C Input High Voltage VIH 2.4 2.4 Logic "1" Input Low Voltage VIL 0.8 0.8 V Logic "0" Input High or IIH Input Low Current IIL 10 10 nA Supply Current ISUPPLY 0.01 1 0.01 1 m A AC ELECTRICAL CHARACTERISTICS TA = 25(cid:176) C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test Conditions Turn On Delay time tON 160 300 160 300 160 300 ns (Note 7) Turn Off Delay time tOFF 78 1500 78 150 78 150 ns (Note 7) Break-Before-Make tBD 20 82 20 82 20 82 ns Delay Time Charge Injection QINJ 0.2 0.5 0.2 0.5 0.2 0.5 pC (Note 3) (Note 4) Off Isolation 75 75 75 dB At f = 100KHz, (Note 5) Crosstalk 90 90 90 dB At f = 100KHz, (Note 6) Total Harmonic THD 0.05 0.05 0.05 % RL = 10K Distortion 0.01 0.01 0.01 RL = 100K Com/Out COM(OFF) Off Capacitance OUT(OFF) 3.0 3.0 3.0 pF Channel On CDS (ON) 5.7 5.7 5.7 pF Capacitance Pin to Pin CPP 0.5 0.6 0.25 pF Capacitance ALD4211/ALD4212 Advanced Linear Devices 5 ALD4213

TYPICAL PERFORMANCE CHARACTERISTICS POWER DISSIPATION AS A ON RESISTANCE AS A FUNCTION OF FREQUENCY FUNCTION OF SIGNAL VOLTAGE 1.0 240(cid:3) W) N (m 0.8 VSUPPLY = 5V ΩE () 200(cid:3) VSUPPLY = 10V O C ER DISSIPATI 00..46 N - RESISTAN 116200(cid:3)(cid:3) 1-82225555°°°°CCCC W O 80 O 0.2 -55°C P 0 40 0 1 10 100 1000 10000 0 2 4 6 8 10(cid:3) FREQUENCY (KHz) SIGNAL VOLTAGE (V) ON RESISTANCE AS A ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE FUNCTION OF SIGNAL VOLTAGE 500 850(cid:3) ΩE () 400(cid:3) VSUPPLY = 5V ΩCE () 700(cid:3) VSUPPLY = 3V NC 300(cid:3) AN 550 A T ON - RESIST 120000 1-- 2282555555°°°°°CCCCC ON - RESIS 245000(cid:3) 1 282555°°°CCC - 25°C - 55°C 0 100 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3.0 SIGNAL VOLTAGE (V) SIGNAL VOLTAGE (V) SWITCH DELAY TIME AS A FUNCTION SWITCH DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE OF SUPPLY VOLTAGE 250 250 ns) 200 ALD 4211 ns) 200 ALD4212 E ( ALD4213, SW2, 3 E ( ALD4213 SW1, 4 M M TI 150 TI 150 Y Y A A L L E E D 100 TURN ON DELAY TIME D 100 TURN ON DELAY TIME H H C C T T WI 50 WI 50 S TURN OFF DELAY TIME S TURN OFF DELAY TIME 0 0 3 4 5 6 7 8 9 10(cid:3) 3 4 5 6 7 8 9 10(cid:3) SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) ALD4211/ALD4212 Advanced Linear Devices 6 ALD4213

TYPICAL PERFORMANCE CHARACTERISTICS SUPPLY CURRENT AS A (cid:13) SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE FUNCTION OF INPUT VOLTAGE 2.0 100 mA) 1.6 VSUPPLY = 10V µA) 80 VSUPPLY = 5V T ( T ( N N E 1.2 E 60 R R R R U U Y C 0.8 Y C 40 L L P P P P U 0.4 U 20 S S 0 0 0 2 4 6 8 10(cid:3) 0 1 2 3 4 5 (cid:13) INPUT VOLTAGE (V) INPUT VOLTAGE (V) SUPPLY CURRENT AS A TOTAL HARMONIC DISTORTION AS FUNCTION OF INPUT VOLTAGE A FUNCTION OF FREQUENCY 10(cid:3) %) 100(cid:3) N ( O µNT (A) 8 VSUPPLY = 3V TORTI 10 VVSS U=P 0P.L3Y5 5= V5RVMS RE 6 DIS 1 RL = 10K R C CU 4 NI 0.1 LY MO P R P A U 2 H 0.01 S L TA RL = 100K 0 O 0.001 T 0 0.6 1.2 1.8 2.4 3.0 0.1 1.0 10 100 INPUT VOLTAGE (V) FREQUENCY (KHz) SWITCH DELAY TIME AS A CHARGE INJECTION AS A FUNCTION FUNCTION OF TEMPERATURE OF SOURCE RESISTANCE 250 3.0 E (ns) 200 NNCO:: NNoorrmmaallllyy COlpoesned VSUPPLY = 5V PC) 2.5 TIM ON ( 2.0 TCH DELAY 110500 TURN ON DELAY TIME NNNCOO GE INJECTI 11..50.(cid:3) CL = 1000pF WI 50 NC AR S CH 0.5 TURN OFF DELAY TIME CL = 200pF 0 0 -75 -25 25 75 100(cid:3) 0 10 20 30 40 50(cid:3) TEMPERATURE (°C) SOURCE RESISTANCE (Ω) ALD4211/ALD4212 Advanced Linear Devices 7 ALD4213

TEST CIRCUITS CROSSTALK TEST CIRCUIT SWITCHING TIME TEST CIRCUIT 4211.STTC.E V+ V- V+ V- V10i 0=k 1HVzr ms COM1 V+ V- OUT1 RL = 1KΩ V+ V- VO COM1 OUT1 50Ω COM2 OUT2 CL = 15pF VS = 3V IN1 VO CL = 35pF GND Logic Input GND CL = 15pF 100kHz RL = 1KΩ 4.5V RL = 1KΩ 0V CCRR = 20 log [ VO/Vi ] tr = tf ≤ 20ns 50% 50% Logic Input VO 10% OFF ISOLATION TEST CIRCUIT 90% V+ V- Vi = 1Vrms V+ V- 100kHz COM1 OUT1 VO 50Ω RL = CL = 15pF ton / toff toff / ton IN1 1KΩ GND QIRR = 20 log (VO/Vi) CHARGE INJECTION TEST CIRCUIT 4211.CITC.EP V+ V- V+ V- COM1 OUT1 VO TOTAL HARMONIC DISTORTION IN1 TEST CIRCUIT CL = 200pF GND 4211.THDTC.EPS.W V+ V- 4.5V 0.5V Logic Input 100kHz Vi = 1Vpp V+ V- 100kHz COM1 OUT1 VO 50Ω RL = IN1 1KΩ Logic Input GND ∆Q = CL∆VO CL = 15pF VO ∆VO ALD4211/ALD4212 Advanced Linear Devices 8 ALD4213