Fast Starting, ±20,000°/sec Vibration Rejecting Rate Gyro Data Sheet ADXRS649 FEATURES GENERAL DESCRIPTION High vibration rejection over wide frequency The ADXRS649 is a complete angular rate sensor (gyroscope) Ultrafast startup: 3 ms that uses the Analog Devices, Inc., patented high volume BiMOS Measurement range extendable to ±50,000°/sec surface-micromachining process to make a complete gyro on 10,000 g powered shock survivability one chip. An advanced, differential, quad sensor design rejects Ratiometric to referenced supply the influence of linear acceleration, enabling the ADXRS649 5 V single-supply operation to offer rate sensing in harsh environments where shock and Z-axis (yaw rate) response vibration are present. −40°C to +105°C operation The output signal, RATEOUT (B1, A2), is a voltage proportional Self-test on digital command to the angular rate about the axis normal to the top surface of Ultrasmall and light (<0.15 cc, <0.5 gram) the package. The output is ratiometric with respect to a provided Temperature sensor output reference supply. An external capacitor is used to set the band- RoHS compliant width. The measurement range is extendable to ±50,000°/sec by adding an external resistor. APPLICATIONS Low power consumption (3.5 mA) enables very low power Sports equipment consumption, and ultrafast startup (3 ms) allows for quick Industrial applications power cycling of the gyro. At 10 samples per second, a pair of Platform stabilization CR2032 coin cells can power the ADXRS649 for three months. High speed tachometry A temperature output is provided for compensation techniques. Two digital self-test inputs electromechanically excite the sensor to test proper operation of both the sensor and the signal condi- tioning circuits. The ADXRS649 is available in a 7 mm × 7 mm × 3 mm CBGA chip scale package. FUNCTIONAL BLOCK DIAGRAM 5V (ADC REF) 100nF 5V ST2 ST1 TEMP VRATIO ADXRS649 AVCC 100nF SELF-TEST 25kΩ 25kΩ AT25°C AGND DEMOD DARMIVPE MESCEHNASNOICRAL AAMCP VGA ROUT 5V 180kΩ±1% VDD CHARGE PUMP AND VOLTAGE 100nF REGULATOR PGND CP1 CP2 CP3 CP4 CP5 SUMJ RATEOUT 22nF 22nF 2.2nF COUT 09573-001 Figure 1. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2010–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com

ADXRS649 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Theory of Operation .........................................................................9 General Description ......................................................................... 1 Setting the Bandwidth ..................................................................9 Functional Block Diagram .............................................................. 1 Temperature Output and Calibration ...................................... 10 Revision History ............................................................................... 2 Modifying the Measurement Range ........................................ 10 Specifications ..................................................................................... 3 Null Bias Adjustment ................................................................. 10 Absolute Maximum Ratings ............................................................ 4 Self-Test Function ...................................................................... 10 Rate Sensitive Axis ....................................................................... 4 Continuous Self-Test .................................................................. 10 ESD Caution .................................................................................. 4 Outline Dimensions ....................................................................... 11 Pin Configuration and Function Descriptions ............................. 5 Ordering Guide .......................................................................... 11 REVISION HISTORY 10/12—Rev. A to Rev. B Changes to Figure 1 .......................................................................... 1 Changed Sensor Resonant Frequency Minimum Parameter from 16 kHz to 15.5 kHz ................................................................. 1 Changed Sensor Resonant Frequency Typical Parameter from 18 kHz to 17.5 kHz ........................................................................... 3 3/11—Rev. 0 to Rev. A Changes to Ordering Guide .......................................................... 11 12/10—Revision 0: Initial Version Rev. B | Page 2 of 12

Data Sheet ADXRS649 SPECIFICATIONS All minimum and maximum specifications are guaranteed. Typical specifications are not guaranteed. T = −40°C to +105°C, V = AV = V = V = 5 V, angular rate = 0°/sec, bandwidth = 80 Hz (C = 0.01 µF), I = 100 µA, ±1 g, A S CC DD RATIO OUT OUT unless otherwise noted. Table 1. Parameter Test Conditions/Comments Min Typ Max Unit SENSITIVITY1 Clockwise rotation is positive output Measurement Range2 Full-scale range over specifications range ±20,000 °/sec Initial and over Temperature −40°C to +105°C 0.08 0.1 0.12 mV/°/sec Temperature Drift3 ±2 % Nonlinearity Best fit straight line 0.1 % of FS NULL BIAS1 Null Bias −40°C to +105°C 2.4 2.5 2.6 V Linear Acceleration Effect Any axis 0.1 °/sec/g Vibration Rectification 40 g rms, 50 Hz to 27 kHz 0.0006 °/sec/g2 NOISE PERFORMANCE Rate Noise Density T = 25°C 0.25 °/sec/√Hz A T = 105°C 0.4 °/sec/√Hz A Resolution Floor T = 25°C, 1 minute to 1 hour in-run 200 °/hr A FREQUENCY RESPONSE Bandwidth4 ±3 dB user adjustable up to specification 2000 Hz Sensor Resonant Frequency 15.5 17.5 20 kHz SELF-TEST1 ST1 RATEOUT Response ST1 pin from Logic 0 to Logic 1 −1300 °/sec ST2 RATEOUT Response ST2 pin from Logic 0 to Logic 1 1300 °/sec ST1 to ST2 Mismatch5 ±2 % Logic 1 Input Voltage 3.3 V Logic 0 Input Voltage 1.7 V Input Impedance To common 40 50 100 kΩ TEMPERATURE SENSOR1 V at 25°C Load = 10 MΩ 2.3 2.4 2.5 V OUT Scale Factor6 T = 25°C, V = 5 V 9 mV/°C A RATIO Load to V 25 kΩ S Load to Common 25 kΩ TURN-ON TIME7 Power on to ±90% of final output, CP5 = 2.2 nF 3 ms OUTPUT DRIVE CAPABILITY Current Drive For rated specifications 200 µA Capacitive Load Drive 1000 pF POWER SUPPLY Operating Voltage (V) 4.75 5.00 5.25 V S Quiescent Supply Current 3.5 mA TEMPERATURE RANGE Specified Performance −40 +105 °C 1 Parameter is linearly ratiometric with V . RATIO 2 Measurement range is the maximum range possible, including output swing range, initial offset, sensitivity, offset drift, and sensitivity drift at 5 V supplies. 3 From +25°C to −40°C or +25°C to +105°C. 4 Adjusted by external capacitor, C . Reducing bandwidth below 0.01 Hz does not result in further noise improvement. OUT 5 Self-test mismatch is described as (ST2 + ST1)/((ST2 − ST1)/2). 6 Scale factor for a change in temperature from 25°C to 26°C. V is ratiometric to V . See the Temperature Output and Calibration section for more information. TEMP RATIO 7 Based on characterization. Rev. B | Page 3 of 12

ADXRS649 Data Sheet ABSOLUTE MAXIMUM RATINGS RATE SENSITIVE AXIS Table 2. Parameter Rating The ADXRS649 is a z-axis rate-sensing device (also called a yaw Acceleration (Any Axis, 0.5 ms) rate-sensing device). It produces a positive going output voltage Unpowered 10,000 g for clockwise rotation about the axis normal to the package top, Powered 10,000 g that is, clockwise when looking down at the package lid. V , AV −0.3 V to +6.0 V DD CC V AV RATIO CC RATE RATEOUT ST1, ST2 AVCC AXIS Output Short-Circuit Duration Indefinite AVCC=5V (Any Pin to Common) LONGITUDINAL 4.75V AXIS + Operating Temperature Range −55°C to +125°C 7 VRATIO/2 Storage Temperature Range −65°C to +150°C RATE IN 1 0.25V SRtarteisnsgess mabaoyv cea tuhsoes pe elirsmteadn uenntd dera mthaeg Ae btoso tlhuet ed Mevaicxeim. Tuhmis is a A1 LAATBECRADLEAFXGIS GND 09573-002 stress rating only; functional operation of the device at these or Figure 2. RATEOUT Signal Increases with Clockwise Rotation any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute ESD CAUTION maximum rating conditions for extended periods may affect device reliability. Drops onto hard surfaces can cause shocks of greater than 10,000 g and can exceed the absolute maximum rating of the device. Care should be exercised in handling to avoid damage. Rev. B | Page 4 of 12

Data Sheet ADXRS649 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS PGND VDD CP5 CP3 CP4 7 6 ST1 CP1 5 ST2 CP2 4 TEMP AVCC 3 2 1 AGND RATEOUT VRATIO NC SUMJ G F E D C B A N1.O NTCE S= NO CONNECT. DO NOT CONNECT TO THIS PIN. 09573-003 Figure 3. Pin Configuration Table 3. Pin Function Descriptions Pin No. Mnemonic Description D6, D7 CP5 High Voltage Filter Capacitor, 2.2 nF. A6, B7 CP4 Charge Pump Capacitor, 22 nF. C6, C7 CP3 Charge Pump Capacitor, 22 nF. A5, B5 CP1 Charge Pump Capacitor, 22 nF. A4, B4 CP2 Charge Pump Capacitor, 22 nF. A3, B3 AV Positive Analog Supply. CC B1, A2 RATEOUT Rate Signal Output. C1, C2 SUMJ Output Amplifier Summing Junction. D1, D2 NC Do not connect to these pins. E1, E2 V Reference Supply for Ratiometric Output. RATIO F1, G2 AGND Analog Supply Return. F3, G3 TEMP Temperature Voltage Output. F4, G4 ST2 Self-Test for Sensor 2. F5, G5 ST1 Self-Test for Sensor 1. G6, F7 PGND Charge Pump Supply Return. E6, E7 V Positive Charge Pump Supply. DD Rev. B | Page 5 of 12

ADXRS649 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS N > 1000 for all histograms, unless otherwise noted. 0 0 60 –3 –30 50 B) RESPONSE (d ––96 ––9600 SE (Degrees) ULATION (%) 3400 ATE –12 –120 PHA POP 20 R –15 –150 10 –180.1 FREQUEN1CY (kHz) 10–180 09573-004 02.4012.4182.4342.4512.4672N.4U8L4L2. 5B0IA02S. 5(1V7)2.5332.5502.5662.5832.599 09573-007 Figure 4. Typical Rate and Phase Response vs. Frequency Figure 7. Null Bias at 25°C (C = 470 pF with a Series RC Low-Pass Filter of 3.3 kΩ and 22 nF) OUT 4.0 60 3.5 50 3.0 E OUT (V) 22..05 LATION (%) 3400 T U A P R 1.5 O P 20 1.0 10 0.5 00 0.5 1.0 1.5 2.0TIM2E. 5(ms)3.0 3.5 4.0 4.5 5.0 09573-005 00.081 0.085 0.089 0.0S9E3NS0.I0T9IV7IT0Y.1 (0m1V0/.°1/s0e5c)0.109 0.113 0.117 09573-008 Figure 5. Typical Start-Up Behavior at RATEOUT Figure 8. Sensitivity at 25°C 10000 100 80 UR (°) %) HO N ( 60 PER 1000 ATIO GREES POPUL 40 E D 20 1000.01 0.1 T1IME (Second1s0) 100 1000 09573-006 0 –100–300–500–7D0E0G–R90E0E–S1 1P0E0–R1 3S0E0C–1O5N0D0–1(°7)00–1900–2100–2300 09573-009 Figure 6. Typical Root Allan Deviation at 25°C vs. Averaging Time Figure 9. ST1 Output Change at 25°C (V = 5 V) RATIO Rev. B | Page 6 of 12

Data Sheet ADXRS649 100 30 25 80 %) %) 20 N ( 60 N ( O O ATI ATI 15 L L U U P 40 P O O P P 10 20 5 0 0 100 300 500 7D00EG9R0E0ES11 P0E0R1 3S0E0C1O50N0D1(7°)00190021002300 09573-010 2.35 2.37 2.39 2.41V2TE.4M3P O2.U4T5PU2T.4 (7V)2.49 2.51 2.53 2.55 09573-013 Figure 10. ST2 Output Change at 25°C (V = 5 V) Figure 13. V Output at 25°C (V = 5 V) RATIO TEMP RATIO 70 3.3 3.1 60 2.9 50 ON (%) 40 PUT (V) 22..57 ULATI 30 OUTP 2.3 P M O E P VT 2.1 20 1.9 10 1.7 70 0 –5 –4 –3 –2 M–1ISMA0TCH (%1) 2 3 4 5 09573-011 1.5–50 –25 0 TEMP2E5RATURE50 (°C) 75 100 09573-014 Figure 11. Self-Test Mismatch at 25°C (V = 5 V) Figure 14. V Output over Temperature, 256 Parts (V = 5 V) RATIO TEMP RATIO 30 1 25 ACCELERATION 0.1 %) 20 ec PULATION ( 15 HzAND %/s 0.01 GYRO OUTPUT PO 10 g²/ 0.001 5 0 3.063.153.243.3C3U3R.4R2E3N.5T1 C3O.6N0S3U.6M9P3T.7IO8N3. 8(m73A.)964.054.144.23 09573-012 0.0001100 FREQU1E0N00CY (Hz) 10000 09573-015 Figure 12. Current Consumption at 25°C (V = 5 V) Figure 15. Typical Response to 25 g RMS Random Vibration, 50 Hz to 5 kHz RATIO (Sensor Bandwidth = 1 kHz) Rev. B | Page 7 of 12

ADXRS649 Data Sheet 10 0.5 0.4 0.3 1 ak) %) 0.2 sec Pe RITY ( 0.1 T (°/ 0.1 NEA 0 RATEOU NONLI––00..21 0.01 –0.3 –0.4 0.001100 VIBRATION INPU1T00 F0REQUENCY (Hz) 10000 09573-016 –0.50 A5N0G0U0LAR RATE1 (0D0e0g0ress per Se1c5o0n0d0) 20000 09573-017 Figure 16. Typical Response to 10 g RMS Sinusoidal Vibration Figure 17. Typical Nonlinearity (Four Typical Devices) (Sensor Bandwidth = 1 kHz) Rev. B | Page 8 of 12

Data Sheet ADXRS649 THEORY OF OPERATION The ADXRS649 operates on the principle of a resonator gyro. Pin D7). CP5 should not be grounded when power is applied Figure 18 shows a simplified version of one of four polysilicon to the ADXRS649. No damage occurs, but under certain condi- sensing structures. Each sensing structure contains a dither tions, the charge pump may fail to start up after the ground is frame that is electrostatically driven to resonance. This pro- removed without first removing power from the ADXRS649. duces the necessary velocity element to produce a Coriolis force SETTING THE BANDWIDTH when experiencing angular rate. The ADXRS649 is designed to External Capacitor C is used in combination with the on- sense a z-axis (yaw) angular rate. OUT chip R resistor to create a low-pass filter to limit the bandwidth OUT When the sensing structure is exposed to angular rate, the result- of the ADXRS649 rate response. The −3 dB frequency set by ing Coriolis force couples into an outer sense frame, which R and C is OUT OUT contains movable fingers that are placed between fixed pickoff f = 1/(2 × π × R × C ) fingers. This forms a capacitive pickoff structure that senses OUT OUT OUT Coriolis motion. The resulting signal is fed to a series of gain f can be well controlled because R has been trimmed OUT OUT and demodulation stages that produce the electrical rate signal during manufacturing to be 180 kΩ ± 1%. Any external resistor output. The quad sensor design rejects linear and angular applied between the RATEOUT pin (B1, A2) and the SUMJ pin acceleration, including external g-forces and vibration. This is (C1, C2) results in achieved by mechanically coupling the four sensing structures R = (180 kΩ × R )/(180 kΩ + R ) OUT EXT EXT such that external g-forces appear as common-mode signals In general, an additional filter (in either hardware or software) that can be removed by the fully differential architecture is added to attenuate high frequency noise arising from demodu- implemented in the ADXRS649. lation spikes at the 18 kHz resonant frequency of the gyro. An The electrostatic resonator requires 13 V to 15 V for operation. RC output filter consisting of a 3.3 kΩ series resistor and 22 nF Because only 5 V are typically available in most applications, shunt capacitor (2.2 kHz pole) is recommended. a charge pump is included on chip. If an external 13 V to 15 V supply is available, the two capacitors on CP1 to CP4 can be omitted, and this supply can be connected to CP5 (Pin D6, X Y Z 09573-018 Figure 18. Simplified Gyro Sensing Structure—One Corner Rev. B | Page 9 of 12

ADXRS649 Data Sheet TEMPERATURE OUTPUT AND CALIBRATION SELF-TEST FUNCTION It is common practice to temperature-calibrate gyros to improve The ADXRS649 includes a self-test feature that actuates each of their overall accuracy. The ADXRS649 has a temperature propor- the sensing structures and associated electronics in the same tional voltage output that provides input to such a calibration manner, as if subjected to angular rate. The self-test is activated method. The temperature sensor structure is shown in Figure 19. by standard logic high levels applied to Input ST1 (F5, G5), The temperature output is characteristically nonlinear, and any Input ST2 (F4, G4), or both. ST1 causes the voltage at RATEOUT load resistance connected to the TEMP output results in decreasing to change by approximately −0.15 V, and ST2 causes an opposite the TEMP output and its temperature coefficient. Therefore, change of +0.15 V. The self-test response follows the viscosity buffering the output is recommended. temperature dependence of the package atmosphere, approximately 0.25%/°C. The voltage at TEMP (F3, G3) is nominally 2.5 V at 25°C, and V = 5 V. The temperature coefficient is ~9 mV/°C at 25°C. Activating ST1 and ST2 simultaneously does not damage the RATIO Although the TEMP output is highly repeatable, it has only part. ST1 and ST2 are fairly closely matched (±2%), but modest absolute accuracy. actuating both simultaneously may result in a small apparent null bias shift proportional to the degree of self-test mismatch. VRATIO TEMP ST1 and ST2 are activated by applying a voltage equal to V RFIXED RTEMP 09573-019 to the ST1 pin and the ST2 pin. The voltage applied to ST1R aAnTIdO Figure 19. Temperature Sensor Structure ST2 must never be greater than AVCC. CONTINUOUS SELF-TEST MODIFYING THE MEASUREMENT RANGE The on-chip integration of the ADXRS649 gives it higher reliability The ADXRS649 scale factor can be reduced to extend the than is obtainable with any other high volume manufacturing measurement range to as much as ±50,000°/sec by adding a method. In addition, it is manufactured under a mature BiMOS single 120 kΩ resistor between the RATEOUT and SUMJ pins. process that has field-proven reliability. As an additional failure If an external resistor is added between RATEOUT and SUMJ, detection measure, a power-on self-test can be performed. How- C must be proportionally increased to maintain correct OUT ever, some applications may warrant continuous self-test while bandwidth. sensing rate. Information about continuous self-test techniques NULL BIAS ADJUSTMENT is also available in the AN-768 Application Note, Using the The nominal 2.5 V null bias is for a symmetrical swing range at ADXRS150/ADXRS300 in Continuous Self-Test Mode. RATEOUT (B1, A2). However, a nonsymmetric output swing may be suitable in some applications. Null bias adjustment is possible by injecting a suitable current to SUMJ (C1, C2). Note that supply disturbances may reflect some null bias instability. Digital supply noise should be avoided, particularly in this case. Rev. B | Page 10 of 12

Data Sheet ADXRS649 OUTLINE DIMENSIONS 7.05 A1BALL 6.85SQ *IAN1DCEOXRANREERA CORNER 6.70 7 6 5 4 3 2 1 A B 4.80 BSCSQ C 0.80 D BSC E F G TOPVIEW BOTTOMVIEW DETAILA 3.80MAX DETAILA 3.20MAX 0.60MAX 2.50MIN 0.25MIN 0.60 COPLANARITY SEATING 0.55 0.15 PLANE 0.50 *BTAOLTLHAE1DID/AEPNATDIFIIENRTEISRNGAOLLLDYPVLIAATHEODBLAEANSLD.LCDOIANMNEETCETRED 10-26-2009-B Figure 20. 32-Lead Ceramic Ball Grid Array [CBGA] (BG-32-3) Dimensions shown in millimeters ORDERING GUIDE Model1 Temperature Range Package Description Package Option ADXRS649BBGZ-RL –40°C to +105°C 32-Lead Ceramic Ball Grid Array [CBGA] BG-32-3 ADXRS649BBGZ –40°C to +105°C 32-Lead Ceramic Ball Grid Array [CBGA] BG-32-3 EVAL-ADXRS649Z Evaluation Board 1 Z = RoHS Compliant Part. Rev. B | Page 11 of 12

ADXRS649 Data Sheet NOTES ©2010–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D09573-0-10/12(B) Rev. B | Page 12 of 12

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