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ADR3425ARJZ-R7产品简介:
ICGOO电子元器件商城为您提供ADR3425ARJZ-R7由Analog设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 ADR3425ARJZ-R7价格参考。AnalogADR3425ARJZ-R7封装/规格:PMIC - 电压基准, Series Voltage Reference IC ±0.1% 10mA SOT-23-6。您可以下载ADR3425ARJZ-R7参考资料、Datasheet数据手册功能说明书,资料中有ADR3425ARJZ-R7 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC VREF SERIES PREC 2.5V SOT23-6参考电压 Micro-Power High-Acc 2.5V |
产品分类 | |
品牌 | Analog Devices |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 电源管理 IC,参考电压,Analog Devices ADR3425ARJZ-R7- |
数据手册 | |
产品型号 | ADR3425ARJZ-R7 |
产品种类 | 参考电压 |
供应商器件封装 | SOT-23-6 |
其它名称 | ADR3425ARJZ-R7DKR |
分流电流—最大值 | 10 mA |
初始准确度 | +/- 2.5 mV |
包装 | Digi-Reel® |
参考类型 | Series Precision References |
商标 | Analog Devices |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
容差 | ±0.1% |
封装 | Reel |
封装/外壳 | SOT-23-6 |
封装/箱体 | SOT-23-6 |
工作温度 | -40°C ~ 125°C |
工厂包装数量 | 3000 |
平均温度系数—典型值 | 2.5 PPM / C |
最大工作温度 | + 125 C |
最小工作温度 | - 40 C |
标准包装 | 1 |
温度系数 | 8ppm/°C |
电压-输入 | 2.7 V ~ 5.5 V |
电压-输出 | 2.5V |
电流-输出 | 10mA |
电流-阴极 | - |
电流-静态 | 100µA |
电源电流 | 85 uA |
系列 | ADR3425 |
输入电压 | 2.7 V to 5.5 V |
输出电压 | 2.5 V |
通道数 | 1 |
Micropower, High Accuracy Voltage References ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 FEATURES PIN CONFIGURATION Initial accuracy: ±0.1% (maximum) GND FORCE 1 6 VOUT FORCE Maximum temperature coefficient: 8 ppm/°C ADR34xx Operating temperature range: −40°C to +125°C GND SENSE 2 5 VOUT SENSE Output current: +10 mA source/−3 mA sink LLooww qduroiepsocuetn vt oclutrargeen:t 2: 15000 m μVA a (tm 2a mxiAm um) ENABLE 3 (NToOt Pto V SIEcWale) 4 VIN 08440-001 Figure 1. 6-Lead SOT-23 Output noise (0.1 Hz to 10 Hz): <10 μV p-p at 1.2 V (typical) 6-lead SOT-23 APPLICATIONS Precision data acquisition systems Industrial instrumentation Medical devices Battery-powered devices GENERAL DESCRIPTION The ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ Table 2. Voltage Reference Choices from Analog Devices ADR3440/ADR3450 are low cost, low power, high precision VOUT Low Cost/ Ultralow Low High Voltage, CMOS voltage references, featuring ±0.1% initial accuracy, low (V) Low Power Power Noise High Performance operating current, and low output noise in a small SOT-23 0.5/1.0 ADR130 package. For high accuracy, output voltage and temperature 1.2 ADR3412 coefficient are trimmed digitally during final assembly using ADR280 Analog Devices, Inc., proprietary DigiTrim® technology. 2.048 ADR360 REF191 ADR430 ADR3420 ADR440 Stability and system reliability are further improved by the low 2.5 ADR3425 ADR291 ADR431 ADR03 output voltage hysteresis of the device and low long-term output AD1582 REF192 ADR441 AD780 voltage drift. Furthermore, the low operating current of the ADR361 device (100 μA maximum) facilitates usage in low power 3.0 ADR3430 REF193 ADR433 ADR06 devices, and its low output noise helps maintain signal integrity AD1583 in critical signal processing systems. ADR363 ADR443 AD780 These CMOS are available in a wide range of output voltages, all 3.3 ADR366 REF196 of which are specified over the industrial temperature range of ADR3433 −40°C to +125°C. 4.096 ADR3440 ADR292 ADR434 Table 1. Selection Guide AD1584 Model Output Voltage (V) Input Voltage Range (V) ADR364 REF198 ADR444 ADR3412 1.200 2.3 to 5.5 5.0 ADR3450 ADR293 ADR435 ADR02 ADR3420 2.048 2.3 to 5.5 AD1585 REF195 ADR445 ADR3425 2.500 2.7 to 5.5 ADR365 AD586 ADR3430 3.000 3.2 to 5.5 10.0 ADR01 ADR3433 3.300 3.5 to 5.5 AD587 ADR3440 4.096 4.3 to 5.5 ADR3450 5.000 5.2 to 5.5 Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2010–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions ........................... 11 Applications ....................................................................................... 1 Typical Performance Characteristics ........................................... 12 Pin Configuration ............................................................................. 1 Terminology .................................................................................... 18 General Description ......................................................................... 1 Theory of Operation ...................................................................... 19 Revision History ............................................................................... 2 Long-Term Stability ................................................................... 19 Specifications ..................................................................................... 3 Power Dissipation....................................................................... 19 ADR3412 Electrical Characteristics........................................... 3 Applications Information .............................................................. 20 ADR3420 Electrical Characteristics........................................... 4 Basic Voltage Reference Connection ....................................... 20 ADR3425 Electrical Characteristics........................................... 5 Input and Output Capacitors .................................................... 20 ADR3430 Electrical Characteristics........................................... 6 4-Wire Kelvin Connections ...................................................... 20 ADR3433 Electrical Characteristics........................................... 7 V Slew Rate Considerations ................................................... 20 IN ADR3440 Electrical Characteristics........................................... 8 Shutdown/Enable Feature ......................................................... 20 ADR3450 Electrical Characteristics........................................... 9 Sample Applications ................................................................... 21 Absolute Maximum Ratings and Minimum Operating Outline Dimensions ....................................................................... 22 Condition ......................................................................................... 10 Ordering Guide .......................................................................... 22 Thermal Resistance .................................................................... 10 ESD Caution ................................................................................ 10 REVISION HISTORY 6/2018—Rev. B to Rev. C 4/2010—Rev. 0 to Rev. A Change to General Description ...................................................... 1 Added ADR3430 and ADR3440....................................... Universal Change to Figure 17 ....................................................................... 14 Changes to Table 1, Table 2, and Figure 1 ...................................... 1 Change to Figure 23 ....................................................................... 15 Changes to Table 3 ............................................................................. 3 Changes to Figure 35 and Figure 36 Caption ............................. 17 Added ADR3430 Electrical Characteristics Section ..................... 4 Changes to Theory of Operation Section .................................... 19 Added Table 4; Renumbered Sequentially ..................................... 4 Change to Ordering Guide ............................................................ 22 Added ADR3440 Electrical Characteristics Section and Table 5 .................................................................................................5 6/2010—Rev. A to Rev. B Changes to Table 6 ............................................................................. 6 Added ADR3412, ADR3420, ADR3433 ..................... Throughout Changes to Figure 2 ........................................................................... 8 Changes to Table 1 and Table 2 ....................................................... 1 Changes to Figure 4 and Figure 5 .................................................... 9 Added ADR3412 Electrical Characteristics Section Changes to Figure 11 ...................................................................... 10 and Table 3 ......................................................................................... 3 Changes to Figure 36 and Figure 37 Caption ............................. 14 Added ADR3420 Electrical Characteristics Section Changes to Figure 39 and Theory of Operation Section .......... 16 and Table 4 ......................................................................................... 4 Changes to Figure 40 and Figure 41 ............................................ 17 Added ADR3433 Electrical Characteristics Section and Changes to Negative Reference Section, Boosted Output Table 7, Renumbered Subsequent Tables ...................................... 7 Current Reference Section, Figure 43, and Figure 44 ................ 18 Replaced Figure 5 Through Figure 7............................................ 12 Changes to Ordering Guide .......................................................... 19 Replaced Figure 11 Through Figure 13 ....................................... 13 3/2010—Revision 0: Initial Version Rev. C | Page 2 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 SPECIFICATIONS ADR3412 ELECTRICAL CHARACTERISTICS V = 2.3 V to 5.5 V, T = 25°C, I = 0 mA, unless otherwise noted. IN A LOAD Table 3. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 1.1988 1.2000 1.2012 V OUT INITIAL ACCURACY V ±0.1 % OERR ±1.2 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 2.3 V to 5.5 V 7 50 ppm/V O IN IN V = 2.3 V to 5.5 V, −40°C ≤ T ≤ +125°C 160 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 14 30 ppm/mA L V = 2.8 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 7 50 ppm/mA L V = 2.8 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 2.8 V to 5.5 V 10 mA IN Sinking V = 2.8 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE > V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, −40°C ≤ T ≤ +125°C 1 1.1 V DO L A I = 2 mA, −40°C ≤ T ≤ +125°C 1 1.15 V L A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , −40°C ≤ T ≤ +125°C 0.85 3 μA EN IN A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 8 μV p-p n f = 10 Hz to 10 kHz 28 μV rms OUTPUT VOLTAGE NOISE e f = 1 kHz 0.6 μV/√Hz n DENSITY OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 100 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 3 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3420 ELECTRICAL CHARACTERISTICS V = 2.3 V to 5.5 V, T = 25°C, I = 0 mA, unless otherwise noted. IN A LOAD Table 4. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 2.0459 2.0480 2.0500 V OUT INITIAL ACCURACY V ±0.1 % OERR ±2.048 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 2.3 V to 5.5 V 7 50 ppm/V O IN IN V = 2.3 V to 5.5 V, −40°C ≤ T ≤ +125°C 160 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 12 30 ppm/mA L V = 2.8 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 7 50 ppm/mA L V = 2.8 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 2.8 V to 5.5 V 10 mA IN Sinking V = 2.8 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE > V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, −40°C ≤ T ≤ +125°C 100 250 mV DO L A I = 2 mA, −40°C ≤ T ≤ +125°C 150 300 mV L A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , −40°C ≤ T ≤ +125°C 0.85 3 μA EN IN A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 15 μV p-p n f = 10 Hz to 10 kHz 38 μV rms OUTPUT VOLTAGE NOISE e f = 1 kHz 0.9 μV/√Hz n DENSITY OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 400 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 4 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3425 ELECTRICAL CHARACTERISTICS V = 2.7 V to 5.5 V, I = 0 mA, T = 25°C, unless otherwise noted. IN L A Table 5. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 2.4975 2.500 2.5025 V OUT INITIAL ACCURACY V ±0.1 % OERR ±2.5 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 2.5 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 2.7 V to 5.5 V 5 50 ppm/V O IN IN V = 2.7 V to 5.5 V, −40°C ≤ T ≤ +125°C 120 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 10 30 ppm/mA L V = 3.0 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 10 50 ppm/mA L V = 3.0 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 3.0 V to 5.5 V 10 mA IN Sinking V = 3.0 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE ≥ V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, T = −40°C ≤ T ≤ +125°C 50 200 mV DO L A A I = 2 mA, T = −40°C ≤ T ≤ +125°C 75 250 mV L A A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , T = −40°C ≤ T ≤ +125°C 1 3 μA EN IN A A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 18 μV p-p n f = 10 Hz to 10 kHz 42 μV rms OUTPUT VOLTAGE NOISE e f = 1 kHz 1 µV/√Hz n DENSITY OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 600 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 5 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3430 ELECTRICAL CHARACTERISTICS V = 3.2 V to 5.5 V, I = 0 mA, T = 25°C, unless otherwise noted. IN L A Table 6. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 2.9970 3.0000 3.0030 V OUT INITIAL ACCURACY V ±0.1 % OERR ±3.0 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 2.5 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 3.2 V to 5.5 V 5 50 ppm/V O IN IN V = 3.2 V to 5.5 V, −40°C ≤ T ≤ +125°C 120 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 9 30 ppm/mA L V = 3.5 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 10 50 ppm/mA L V = 3.5 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 3.5 V to 5.5 V 10 mA IN Sinking V = 3.5 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE ≥ V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, T = −40°C ≤ T ≤ +125°C 50 200 mV DO L A A I = 2 mA, T = −40°C ≤ T ≤ +125°C 75 250 mV L A A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , T = −40°C ≤ T ≤ +125°C 0.85 3 μA EN IN A A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 22 μV p-p n f = 10 Hz to 10 kHz 45 μV rms OUTPUT VOLTAGE NOISE DENSITY e f = 1 kHz 1.1 µV/√Hz n OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 700 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 6 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3433 ELECTRICAL CHARACTERISTICS V = 3.5 V to 5.5 V, I = 0 mA, T = 25°C, unless otherwise noted. IN L A Table 7. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 3.2967 3.30 3.3033 V OUT INITIAL ACCURACY V ±0.1 % OERR ±3.3 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 3.5 V to 5.5 V 5 50 ppm/V O IN IN V = 3.5 V to 5.5 V, −40°C ≤ T ≤ +125°C 120 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 9 30 ppm/mA L V = 3.8 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 10 50 ppm/mA L V = 3.8 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 3.8 V to 5.5 V 10 mA IN Sinking V = 3.8 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE > V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE < 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, −40°C ≤ T ≤ +125°C 50 200 mV DO L A I = 2 mA, −40°C ≤ T ≤ +125°C 75 250 mV L A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , −40°C ≤ T ≤ +125°C 0.85 3 μA EN IN A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 25 μV p-p n f = 10 Hz to 10 kHz 46 μV rms OUTPUT VOLTAGE NOISE DENSITY e f = 1 kHz 1.2 μV/√Hz n OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz -60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 750 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 7 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3440 ELECTRICAL CHARACTERISTICS V = 4.3 V to 5.5 V, I = 0 mA, T = 25°C, unless otherwise noted. IN L A Table 8. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 4.0919 4.0960 4.1000 V OUT INITIAL ACCURACY V ±0.1 % OERR ±4.096 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 2.5 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 4.3 V to 5.5 V 3 50 ppm/V O IN IN V = 4.3 V to 5.5 V, −40°C ≤ T ≤ +125°C 120 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 6 30 ppm/mA L V = 4.6 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 15 50 ppm/mA L V = 4.6 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 4.6 V to 5.5 V 10 mA IN Sinking V = 4.6 V to 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE ≥ V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, T = −40°C ≤ T ≤ +125°C 50 200 mV DO L A A I = 2 mA, T = −40°C ≤ T ≤ +125°C 75 250 mV L A A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , T = −40°C ≤ T ≤ +125°C 3 μA EN IN A A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 29 μV p-p n f = 10 Hz to 10 kHz 53 μV rms OUTPUT VOLTAGE NOISE e f = 1 kHz 1.4 µV/√Hz n DENSITY OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −60 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 800 μs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 8 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ADR3450 ELECTRICAL CHARACTERISTICS V = 5.2 V to 5.5 V, I = 0 mA, T = 25°C, unless otherwise noted. IN L A Table 9. Parameter Symbol Conditions Min Typ Max Unit OUTPUT VOLTAGE V 4.9950 5.0000 5.0050 V OUT INITIAL ACCURACY V ±0.1 % OERR ±5.0 mV TEMPERATURE COEFFICIENT TCV −40°C ≤ T ≤ +125°C 2.5 8 ppm/°C OUT A LINE REGULATION ΔV /ΔV V = 5.2 V to 5.5 V 3 50 ppm/V O IN IN V = 5.2 V to 5.5 V, −40°C ≤ T ≤ +125°C 120 ppm/V IN A LOAD REGULATION ΔV /ΔI O L Sourcing I = 0 mA to 10 mA, 3 30 ppm/mA L V = 5.5 V, −40°C ≤ T ≤ +125°C IN A Sinking I = 0 mA to −3 mA, 19 50 ppm/mA L V = 5.5 V, −40°C ≤ T ≤ +125°C IN A OUTPUT CURRENT CAPACITY I L Sourcing V = 5.5 V 10 mA IN Sinking V = 5.5 V −3 mA IN QUIESCENT CURRENT I Q Normal Operation ENABLE ≥ V × 0.85 85 μA IN ENABLE = V , −40°C ≤ T ≤ +125°C 100 μA IN A Shutdown ENABLE ≤ 0.7 V 5 μA DROPOUT VOLTAGE1 V I = 0 mA, T = −40°C ≤ T ≤ +125°C 50 200 mV DO L A A I = 2 mA, T = −40°C ≤ T ≤ +125°C 75 250 mV L A A ENABLE PIN Shutdown Voltage V 0 0.7 V L ENABLE Voltage V V × 0.85 V V H IN IN ENABLE Pin Leakage Current I ENABLE = V , T = −40°C ≤ T ≤ +125°C 1 3 μA EN IN A A OUTPUT VOLTAGE NOISE e p-p f = 0.1 Hz to 10 Hz 35 μV p-p n f = 10 Hz to 10 kHz 60 μV rms OUTPUT VOLTAGE NOISE e f = 1 kHz 1.5 µV/√Hz n DENSITY OUTPUT VOLTAGE HYSTERESIS2 ΔV T = +25°C to −40°C to +125°C to +25°C 70 ppm OUT_HYS A RIPPLE REJECTION RATIO RRR f = 60 Hz −58 dB IN LONG-TERM STABILITY ΔV 1000 hours at 50°C 30 ppm OUT_LTD TURN-ON SETTLING TIME tR CIN = 0.1 μF, CL = 0.1 μF, RLoad = 1 kΩ 900 µs 1 Refers to the minimum difference between VIN and VOUT such that VOUT maintains a minimum accuracy of 0.1%. See the Terminology section. 2 See the Terminology section. The part is placed through the temperature cycle in the order of temperatures shown. Rev. C | Page 9 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ABSOLUTE MAXIMUM RATINGS AND MINIMUM OPERATING CONDITION TA = 25°C, unless otherwise noted. THERMAL RESISTANCE Table 10. θJA is specified for the worst-case conditions, that is, a device Parameter Rating soldered in a circuit board for surface-mount packages. Supply Voltage 6 V Table 11. Thermal Resistance ENABLE to GND SENSE Voltage V IN Package Type θ θ Unit JA JC V Minimum Slew Rate 0.1 V/ms IN 6-Lead SOT-23 (RJ-6) 230 92 °C/W Operating Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +125°C Junction Temperature Range −65°C to +150°C ESD CAUTION Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. C | Page 10 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS GND FORCE 1 6 VOUT FORCE ADR34xx GND SENSE 2 5 VOUT SENSE ENABLE 3 (NToOt Pto V SIEcWale) 4 VIN 08440-002 Figure 2. Pin Configuration Table 12. Pin Function Descriptions Pin No. Mnemonic Description 1 GND FORCE Ground Force Connection.1 2 GND SENSE Ground Voltage Sense Connection. Connect directly to the point of lowest potential in the application.1 3 ENABLE Enable Connection. Enables or disables the device. 4 V Input Voltage Connection. IN 5 V SENSE Reference Voltage Output Sensing Connection. Connect directly to the voltage input of the load devices.1 OUT 6 V FORCE Reference Voltage Output.1 OUT 1 See the Applications Information section for more information on force/sense connections. Rev. C | Page 11 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 TYPICAL PERFORMANCE CHARACTERISTICS T = 25°C, unless otherwise noted. A 2.5010 5.0025 2.5008 VIN = 5.5V 5.0020 VIN = 5.5V 2.5006 5.0015 V)2.5004 V)5.0010 E ( E ( AG2.5002 AG5.0005 VOLT2.5000 VOLT5.0000 PUT 2.4998 PUT 4.9995 UT UT O2.4996 O4.9990 2.4994 4.9985 2.4992 4.9980 2.4990 4.9975 –40 –25 –10 5 T2E0MPE35RATU50RE (º6C5) 80 95 110 125 08440-003 –40 –25 –10 5 T2E0MPE35RATU50RE (º6C5) 80 95 110 125 08440-004 Figure 3. ADR3425 Output Voltage vs. Temperature Figure 6. ADR3450 Output Voltage vs. Temperature 40 45 35 40 35 30 S S CE CE30 VI25 VI E E D D25 OF 20 OF R R 20 E E MB15 MB U U15 N N 10 10 5 5 0 0 1 T2EMPE3RAT4URE C5OEF6FICIE7NT (p8pm/°9C) 10 11 08440-005 0 0 1 T2EMPE3RAT4URE C5OEF6FICIE7NT (p8pm/°9C) 10 MORE 08440-006 Figure 4. ADR3425 Temperature Coefficient Distribution Figure 7. ADR3450 Temperature Coefficient Distribution 24 35 22 ADR3412 ADR3412 ADR3420 ADR3420 20 ADR3425 IL = 0mATO +10mA 30 ADR3425 IL = 0mATO –3mA A) ADR3430 SOURCING A) ADR3430 SINKING m 18 ADR3433 m ADR3433 m/ ADR3440 m/ ADR3440 pp 16 ADR3450 pp 25 ADR3450 N ( 14 N ( O O ATI 12 ATI 20 L L U 10 U G G E E R 8 R 15 D D OA 6 OA L L 4 10 02 08440-053 5 08440-054 –40 –25 –10 5 20 35 50 65 80 95 110 125 –40 –25 –10 5 20 35 50 65 80 95 110 125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. Load Regulation vs. Temperature (Sourcing) Figure 8. Load Regulation vs. Temperature (Sinking) Rev. C | Page 12 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 1.20 400 –40°C 1.15 350 +25°C +125°C V) 1.10 mV)300 DIFFERENTIAL VOLTAGE ( 0011....99000505 TTTAAA === –++421052°°5CC°C DIFFERENTIAL VOLTAGE (112205050000 00..8805 08440-056 500 –3 –2 –1 0 1LOA2D CU3RRE4NT (5mA)6 7 8 9 10 –3 –2 –1 0 1LOA2D CU3RRE4NT (5mA)6 7 8 9 10 08440-015 Figure 9. ADR3412 Dropout Voltage vs. Load Current Figure 12. ADR3425 Dropout Voltage vs. Load Current 450 350 –40°C 400 +25°C 300 +125°C V) 350 V) m m OLTAGE ( 235000 TTTAAA === –++421052°°5CC°C OLTAGE (220500 AL V 200 AL V NTI 150 NTI150 E E FER 100 FER100 F F DI 50 DI 50 –500 08440-057 0 –3 –2 –1 0 1LOA2D CU3RRE4NT (5mA)6 7 8 9 10 –3 –2 –1 0 1LOA2D CU3RRE4NT (5mA)6 7 8 9 10 08440-016 Figure 10. ADR3420 Dropout Voltage vs. Load Current Figure 13. ADR3450 Dropout Voltage vs. Load Current 140 ADR3412 FREQUENCY GEN = 1Hz 120 AADDRR33442205 ADR3430 VIN = 2V/DIV pm/V) 100 AADDRR33443430 RCILN = = 1 CkOΩUT = 0.1µF ON (p 80 ADR3450 TI 2 A L U 60 G E VOUT = 500mV/DIV NE R 40 LI 20 1 CH1 500mV CH2 2.00V M100µs A CH2 2.36V 08440-055 0–40 –25 –10 5 T2E0MPE35RATU50RE (°6C5) 80 95 110 125 08440-052 Figure 11. ADR3412 Start-Up (Turn-On Settle) Time Figure 14. Line Regulation vs. Temperature Rev. C | Page 13 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 0 V)IN–10 CCLIN = = 1 0.1.1µµFF /OUT–20 V B d –30 O ( ATI –40 1 N R O –50 TI C E –60 10µV/DIV J E R E –70 L P TIME = 1s/DIV 08440-028 RIP ––9800 CH1 pk-pk = 18µV CH1 RMS = 3.14µV 10 100 FREQUE1NkCY (Hz) 10k 100k 08440-025 Figure 15. ADR3425 Output Voltage Noise (0.1 Hz to 10 Hz) Figure 18. ADR3425 Ripple Rejection Ratio vs. Frequency CIN = CL = 0.1µF RL =∞ 1 VIN = 2V/DIV 1 100µV/DIV TIME = 200µs/DIV TIME = 1s/DIV 08440-029 2 VOUT = 1V/DIV 08440-030 CH1 pk-pk = 300µV CH1 RMS = 42.0µV Figure 16. ADR3425 Output Voltage Noise (10 Hz to 10 kHz) Figure 19. ADR3425 Start-Up Response 10k ENABLE VENABLE = 1V/DIV Hz) CVIINN == 3C.L0 v= 0.1µF V/√ RL =∞ n Y ( SIT 1k 1 N E D E OIS VOUT = 1V/DIV N TIME = 200µs/DIV 2 100 08440-031 0.1 1 FR10EQUENCY 1(0H0z) 1k 10k 08440-023 Figure 20. ADR3425 Restart Response from Shutdown Figure 17. ADR3425 Output Noise Spectral Density Rev. C | Page 14 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 0 V)IN–10 CCLIN = = 1 0.1.1µµFF /OUT–20 V B d –30 O ( ATI –40 1 N R O –50 TI C E –60 J E 10µV/DIV R E –70 L P 08440-032 RIP ––9800 CH1 pk-pk = 33.4µV CH1 RMS = 5.68µV 10 100 FREQUE1NkCY (Hz) 10k 100k 08440-026 Figure 21. ADR3450 Output Voltage Noise (0.1 Hz to 10 Hz) Figure 24. ADR3450 Ripple Rejection Ratio vs. Frequency CIN = 0µF CL = 0.1µF RL =∞ VIN 2V/DIV 1 1 VOUT 100µV/DIV 2V/DIV TIME = 200µs/DIV 08440-033 2 08440-034 CH1 pk-pk = 446µV CH1 RMS = 60.3µV Figure 22. ADR3450 Output Voltage Noise (10 Hz to 10 kHz) Figure 25. ADR3450 Start-Up Response 10k ENABLE Hz) VVEINN A= B5L.E5V = 2V/DIV nV/√ 1 RCILN = =∞ CL = 0.1µF Y ( T SI N E E D VOUT = 2V/DIV S OI N TIME = 200µs/DIV 1k 2 08440-035 0.1 1 FR10EQUENCY 1(0H0z) 1k 10k 08440-024 Figure 26. ADR3450 Restart Response from Shutdown Figure 23. ADR3450 Output Noise Spectral Density Rev. C | Page 15 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 ENABLE ENABLE 1V/DIV 2V/DIV VCRIILNN = == 1 3CkVLΩ = 0.1µF CVRIILNN = == 1 5CkVLΩ = 0.1µF 1 1 2 VOUT = 1V/DIV TIME = 200µs/DIV 08440-036 2 VOUT = 2V/DIV TIME = 200µs/DIV 08440-039 Figure 27. ADR3425 Shutdown Response Figure 30. ADR3450 Shutdown Response VIN = 100mV/DIV 5.5V 3.2V CIN = CL = 0.1µF 2.7V 1 500mV/DIV CIN = CL = 0.1µF 5.2V 2 VOUT = 10mV/DIV 2 VOUT = 5mV/DIV 1 TIME = 1ms/DIV 08440-037 TIME = 1ms/DIV 08440-040 Figure 28. ADR3425 Line Transient Response Figure 31. ADR3450 Line Transient Response IL +10mA SOURCING SOURCING IL +10mA SINKING SINKING –3mA SINKING SINKING –3mA CIN = 0.1µF CIN = 0.1µF CL = 0.1µF CL = 0.1µF RL = 500Ω RL = 250Ω 5.0V 2.5V VOUT = 20mV/DIV VOUT = 20mV/DIV TIME = 1ms/DIV 08440-038 Figure 32. ADR3450 LoTaIMd ET r=a 1nmsise/nDtIV Response 08440-041 Figure 29. ADR3425 Load Transient Response Rev. C | Page 16 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 100 7 90 VIN = 5.5 V 6 80 URRENT (µA) 567000 OF DEVICES 45 LY C 40 BER 3 P M SUP 30 NU 2 20 1 100 08440-042 0 –40 –25 –10 5 20 35 50 65 80 95 110 125 0505050505050505050505 5443322110 01122334455 0000000000 00000000000 TEMPERATURE (°C) –0.–0.–0.–0.–0.–0.R–0.EL–0.AT–0.IVE–0. SHIF0.T IN0. V0.OU0.T (%0.)0.0.0.0.0.0. 08440-043 Figure 33. Supply Current vs. Temperature Figure 36. Output Voltage Shift Distribution After Reflow (SHR Drift) 2.0 8 TA = +25°C → +150°C → –50°C → +25°C 1.8 –40°C 7 +25°C 1.6 +125°C mA)1.4 ES6 URRENT (11..02 OF DEVIC45 C R PLY 0.8 MBE3 SUP0.6 NU 2 0.4 0.02 01 08440-044 0 10 20 E3N0ABL4E0 VOL5TA0GE 6(%0 of V7I0N) 80 90 100 08440-008 –150 –140 –130 –120OU–110TP–100UT–90 VO–80LT–70AG–60E H–50YS–40TER–30ES–20IS –10(pp0m)10 20 30 40 Figure 34. Supply Current vs. ENABLE Pin Voltage Figure 37. ADR3450 Thermally Induced Output Voltage Hysteresis Distribution 10 80 CL = 0.1µF pm) CL = 1.1µF T (p 60 F E (Ω) 1 GE DRI 40 C A 20 N T A L D O MPE UT V 0 UT I UTP–20 UTP 0.1 M O O R–40 E T G- 0.01 LON––6800 08440-045 10 100 1kFREQU1E0NkCY (Hz)100k 1M 10M 08440-027 0 200 ELA4P0S0ED TIME (6H0o0urs) 800 1000 Figure 35. ADR3450 Output Impedance vs. Frequency Figure 38. ADR3450 Typical Long-Term Output Voltage Drift (Four Devices, 1000 Hours) Rev. C | Page 17 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 TERMINOLOGY Dropout Voltage (VDO) ∆VOUT_HYS =VOUT(25°C)−VOUT_TC [V] Dropout voltage, sometimes referred to as supply voltage V (25°C)−V headroom or supply-output voltage differential, is defined as ∆V = OUT OUT_TC ×106 [ppm] OUT_HYS V (25°C) the minimum voltage differential between the input and output OUT such that the output voltage is maintained to within 0.1% where: accuracy. VOUT(25°C) is the output voltage at 25°C. V is the output voltage after temperature cycling. V = (V − V ) | I = constant OUT_TC DO IN OUT min L Long-Term Stability (ΔV ) Because the dropout voltage depends upon the current passing OUT_LTD Long-term stability refers to the shift in output voltage at 50°C through the device, it is always specified for a given load current. after 1000 hours of operation in a 50°C environment. Ambient In series-mode devices, dropout voltage typically increases temperature is kept at 50°C to ensure that the temperature proportionally to load current (see Figure 8 and Figure 14). chamber does not switch randomly between heating and cooling, Temperature Coefficient (TCV ) OUT which can cause instability over the 1000 hour measurement. The temperature coefficient relates the change in output voltage This is also expressed as either a shift in voltage or a difference to the change in ambient temperature of the device, as normalized in ppm from the nominal output. by the output voltage at 25°C. This parameter is expressed in ppm/°C and can be determined by the following equation: ∆VOUT_LTD = VOUT(t1)−VOUT(t0) [V] max{V (T,T,T )}−min{V (T,T,T )} V (t )−V (t ) TCV = OUT 1 2 3 OUT 1 2 3 × ∆V = OUT 1 OUT 0 ×106 [ppm] OUT V (T )×(T −T) OUT_LTD V (t ) OUT 2 3 1 OUT 0 106[ppm/°C] where: (1) V (t) is the V at 50°C at Time 0. OUT 0 OUT V (t) is the V at 50°C after 1000 hours of operation where: OUT 1 OUT at 50°C. V (T) is the output voltage at Temperature T. OUT T1 = −40°C. Line Regulation T2 = +25°C. Line regulation refers to the change in output voltage in response T3 = +125°C. to a given change in input voltage and is expressed in percent per volt, ppm per volt, or μV per volt change in input voltage. This three-point method ensures that TCV accurately OUT This parameter accounts for the effects of self-heating. portrays the maximum difference between any of the three temperatures at which the output voltage of the part is Load Regulation measured. Load regulation refers to the change in output voltage in response to a given change in load current and is expressed in The TCV for the ADR3412/ADR3425/ADR3430/ADR3433/ OUT μV per mA, ppm per mA, or ohms of dc output resistance. This ADR3440/ADR3450 is guaranteed via statistical means. This is parameter accounts for the effects of self-heating. accomplished by recording output voltage data for a large number of units over temperature, computing TCVOUT for each Solder Heat Resistance (SHR) Drift individual device via Equation 1, then defining the maximum SHR drift refers to the permanent shift in output voltage TCVOUT limits as the mean TCVOUT for all devices extended by induced by exposure to reflow soldering, expressed in units of six standard deviations (6σ). ppm. This is caused by changes in the stress exhibited upon the die by the package materials when exposed to high tempera- Thermally Induced Output Voltage Hysteresis (ΔV ) OUT_HYS tures. This effect is more pronounced in lead-free soldering Thermally induced output voltage hysteresis represents the processes due to higher reflow temperatures. change in output voltage after the device is exposed to a specified temperature cycle. This is expressed as either a shift in voltage or a difference in ppm from the nominal output. Rev. C | Page 18 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 THEORY OF OPERATION VIN LONG-TERM STABILITY One of the key parameters of the ADR34xx references is long- term stability. Regardless of output voltage, internal testing BAND GAP VBG ENABLE VOLTAGE during development showed a typical drift of approximately REFERENCE VOUT FORCE 30 ppm after 1000 hours of continuous, nonloaded operation VOUT SENSE in a 50°C environment. RFB1 GND FORCE It is important to understand that long-term stability is not RFB2 guaranteed by design and that the output from the device may shift beyond the typical 30 ppm specification at any time, GND SENSE 08440-046 especially during the first 200 hours of operation. For systems that require highly stable output voltages over long periods of Figure 39. Block Diagram time, the designer should consider burning in the devices prior The ADR3412/ADR3425/ADR3430/ADR3433/ADR3440/ to use to minimize the amount of output drift exhibited by the ADR3450 use a proprietary voltage reference architecture to reference over time. See the AN-713 Application Note, The achieve high accuracy, low temperature coefficient (TC), and Effect of Long-Term Drift on Voltage References, at www.analog.com low noise in a CMOS process. Like all band gap references, the for more information regarding the effects of long-term drift references combine two voltages of opposite TCs to create an and how it can be minimized. output voltage that is nearly independent of ambient temper- POWER DISSIPATION ature. However, unlike traditional band gap voltage references, the temperature-independent voltage of the references is arranged to The ADR34xx voltage references are capable of sourcing up to be the base-emitter voltage, V , of a bipolar transistor at room 10 mA of load current at room temperature across the rated BE temperature rather than the V extrapolated to 0 K (the V of input voltage range. However, when used in applications subject BE BE bipolar transistor at 0 K is approximately V , the band gap to high ambient temperatures, the input voltage and load cur- G0 voltage of silicon). A corresponding positive-TC voltage is then rent should be carefully monitored to ensure that the device added to the V voltage to compensate for its negative TC. does not exceeded its maximum power dissipation rating. The BE maximum power dissipation of the device can be calculated via The key benefit of this technique is that the trimming of the the following equation: initial accuracy and TC can be performed without interfering with one another, thereby increasing overall accuracy across P =TJ −TA[W] temperature. Curvature correction techniques further reduce D θ JA the temperature variation. where: The band gap voltage (V ) is then buffered and amplified to BG P is the device power dissipation. D produce stable output voltages of 2.5 V and 5.0 V. The output T is the device junction temperature. J buffer can source up to 10 mA and sink up to −3 mA of load T is the ambient temperature. A current. θ is the package (junction-to-air) thermal resistance. JA The ADR34xx family leverages Analog Devices proprietary Because of this relationship, acceptable load current in high DigiTrim technology to achieve high initial accuracy and low temperature conditions may be less than the maximum current- TC, and precision layout techniques lead to very low long-term sourcing capability of the device. In no case should the part be drift and thermal hysteresis. operated outside of its maximum power rating because doing so can result in premature failure or permanent damage to the device. Rev. C | Page 19 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 APPLICATIONS INFORMATION BASIC VOLTAGE REFERENCE CONNECTION voltages can be sensed accurately. These voltages are fed back VIN VOUT into the internal amplifier and used to automatically correct for 2.7V TO 4 VIN VOUT FORCE 6 2.5V the voltage drop across the current-carrying output and ground 5.5V 3 ENABLE VOUT SENSE 5 lines, resulting in a highly accurate output voltage across the load. To achieve the best performance, the sense connections 1µF 0.1µF 0.1µF ADR34xx should be connected directly to the point in the load where the output voltage should be the most accurate. See Figure 41 for an GND SENSE 2 GND FORCE 1 08440-047 exampOlUeT PaUpTp CliAcPaAtiCoITnO. R(S) SHOULD Figure 40. Basic Reference Connection BE MOUNTED AS CLOSE TO VOUT FORCE PIN AS POSSIBLE. The circuit shown in Figure 40 illustrates the basic configuration 0.1µF for the ADR34xx references. Bypass capacitors should be connected according to the following guidelines. VIN 4 VIN VOUT FORCE 6 INPUT AND OUTPUT CAPACITORS 3 ENABLE VOUT SENSE 5 SENSE CONNECTIONS SHOULD CONNECT AS A 1 μF to 10 μF electrolytic or ceramic capacitor can be ADR34xx LOAD 1µF 0.1µF CLOSE TO LOAD connected to the input to improve transient response in DEVICE AS POSSIBLE. applications where the supply voltage may fluctuate. An GND SENSE 2 aind dpiatrioalnleall t0o.1 r eμdFu cceer hamighic fcraepqauceintocry sshuopuplldy bneo icsoen. nected GND FORCE 1 08440-048 Figure 41. Application Showing Kelvin Connection A ceramic capacitor of at least a 0.1 μF must be connected to the output to improve stability and help filter out high fre- It is always advantageous to use Kelvin connections whenever quency noise. An additional 1 μF to 10 μF electrolytic or possible. However, in applications where the IR drop is negligi- ceramic capacitor can be added in parallel to improve transient ble or an extra set of traces cannot be routed to the load, the performance in response to sudden changes in load current; force and sense pins for both VOUT and GND can simply be tied however, the designer should keep in mind that doing so together, and the device can be used in the same fashion as a increases the turn-on time of the device. normal 3-terminal reference (as shown in Figure 40). Best performance and stability is attained with low ESR (for VIN SLEW RATE CONSIDERATIONS example, less than 1 Ω), low inductance ceramic chip-type In applications with slow-rising input voltage signals, the refer- output capacitors (X5R, X7R, or similar). If using an electrolytic ence exhibits overshoot or other transient anomalies that appear capacitor on the output, a 0.1 µF ceramic capacitor should be on the output. These phenomena also appear during shutdown placed in parallel to reduce overall ESR on the output. as the internal circuitry loses power. 4-WIRE KELVIN CONNECTIONS To avoid such conditions, ensure that the input voltage wave- Current flowing through a PCB trace produces an IR voltage form has both a rising and falling slew rate of at least 0.1 V/ms. drop, and with longer traces, this drop can reach several SHUTDOWN/ENABLE FEATURE millivolts or more, introducing a considerable error into the The ADR34xx references can be switched to a low power shut- output voltage of the reference. A 1 inch long, 5 mm wide trace down mode when a voltage of 0.7 V or lower is input to the of 1 ounce copper has a resistance of approximately 100 mΩ at ENABLE pin. Likewise, the reference becomes operational for room temperature; at a load current of 10 mA, this can ENABLE voltages of 0.85 × V or higher. During shutdown, the introduce a full millivolt of error. In an ideal board layout, the IN supply current drops to less than 5 μA, useful in applications that reference should be mounted as close to the load as possible to are sensitive to power consumption. minimize the length of the output traces, and, therefore, the error introduced by voltage drop. However, in applications If using the shutdown feature, ensure that the ENABLE pin where this is not possible or convenient, force and sense voltage does not fall between 0.7 V and 0.85 × VIN because this connections (sometimes referred to as Kelvin sensing causes a large increase in the supply current of the device and connections) are provided as a means of minimizing the IR may keep the reference from starting up correctly (see Figure 34). drop and improving accuracy. If not using the shutdown feature, however, the ENABLE pin can simply be tied to the V pin, and the reference remains Kelvin connections work by providing a set of high impedance IN operational continuously. voltage-sensing lines to the output and ground nodes. Because very little current flows through these connections, the IR drop across their traces is negligible, and the output and ground Rev. C | Page 20 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 SAMPLE APPLICATIONS VIN 4 VIN VOUT FORCE 6 +5V Negative Reference 3 ENABLE VOUT SENSE 5 R101kΩ Figure 42 shows how to connect the ADR3450 and a standard 1µF 0.1µF ADR3450 0.1µF CMOS op amp, such as the AD8663, to provide a negative R2 GND SENSE 2 10kΩ reference voltage. This configuration provides two main advantages: first, it only requires two devices and, therefore, GND FORCE 1 does not require excessive board space; second, and more +15V importantly, it does not require any external resistors, meaning that the performance of this circuit does not rely on choosing ADA4000-1 –5V expensive parts with low temperature coefficients to ensure R3 5kΩ accuracy. +VDD –15V 08440-050 Figure 43. ADR3450 Bipolar Output Reference 1µF 0.1µF 4 VIN VOUT FORCE 6 AD8663 Boosted Output Current Reference –5V 3 ENABLE VOUT SENSE 5 Figure 44 shows a configuration for obtaining higher current 0.1µF ADR3450 –VDD 0.1µF drive capability from the ADR34xx references without GND SENSE 2 sacrificing accuracy. The op amp regulates the current flow GND FORCE 1 08440-049 tthhero ruegfehr ethnec eM; cOurSrFeEnTt ius nthtiel nV dOrUaTw eqnu dailrse tchtley o furotpmu tV vIoN litnasgtee aodf of Figure 42. ADR3450 Negative Reference from the reference itself, allowing increased current drive In this configuration, the V pins of the reference sit at virtual capability. OUT ground, and the negative reference voltage and load current are VIN taken directly from the output of the operational amplifier. Note that in applications where the negative supply voltage is close to U6 +16V the reference output voltage, a dual-supply, low offset, rail-to- R1 4 VIN VOUT FORCE 6 100Ω 2N7002 rail output amplifier must be used to ensure an accurate output AD8663 voltage. The operational amplifier must also be able to source or 3 ENABLE VOUT SENSE 5 VOUT sink an appropriate amount of current for the application. 1µF 0.1µF 0.1µF ADR34xx Bipolar Output Reference RL C0.L1µF 200Ω Figure 43 shows a bipolar reference configuration. By connecting GND SENSE 2 the output of the ADR3450 to the inverting terminal of an onpegearatitvioe nraelf earmenpcleif iveor,l tiat gies sp. oRs1s iabnled t Ro 2o bmtauisnt bbeo tmh aptochsietdiv ea sa nd GND FORCE 1 08440-051 Figure 44. Boosted Output Current Reference closely as possible to ensure minimal difference between the Because the current-sourcing capability of this circuit depends negative and positive outputs. Resistors with low temperature only on the I rating of the MOSFET, the output drive capability coefficients must also be used if the circuit is used in environments D can be adjusted to the application simply by choosing an with large temperature swings; otherwise, a voltage difference appropriate MOSFET. In all cases, the V SENSE pin should develops between the two outputs as the ambient temperature OUT be tied directly to the load device to maintain maximum output changes. voltage accuracy. Rev. C | Page 21 of 22
ADR3412/ADR3420/ADR3425/ADR3430/ADR3433/ADR3440/ADR3450 OUTLINE DIMENSIONS 3.00 2.90 2.80 1.70 6 5 4 3.00 1.60 2.80 1.50 2.60 1 2 3 PIN1 INDICATOR 0.95BSC 1.90 BSC 1.30 1.15 0.90 1.45MAX 0.20MAX 0.95MIN 0.08MIN 0.55 0.15MAX 10° 0.45 0.05MIN 0.50MAX SPELAATNIENG 4° B0S.6C0 0.35 0.30MIN 0° COMPLIANTTOJEDECSTANDARDSMO-178-AB 12-16-2008-A Figure 45. 6-Lead Small Outline Transistor Package (SOT-23) (RJ-6) Dimensions shown in millimeters ORDERING GUIDE Ordering Marking Model1 Output Voltage (V) Temperature Range Package Description Package Option Quantity Code ADR3412ARJZ-R2 1.200 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2R ADR3412ARJZ-R7 1.200 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2R ADR3420ARJZ-R2 2.048 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2V ADR3420ARJZ-R7 2.048 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2V ADR3425ARJZ-R2 2.500 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2X ADR3425ARJZ-R7 2.500 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2X ADR3430ARJZ-R2 3.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R2Z ADR3430ARJZ-R7 3.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R2Z ADR3433ARJZ-R2 3.300 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R31 ADR3433ARJZ-R7 3.300 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R31 ADR3440ARJZ-R2 4.096 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R33 ADR3440ARJZ-R7 4.096 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R33 ADR3450ARJZ-R2 5.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 250 R34 ADR3450ARJZ-R7 5.000 −40°C to +125°C 6-Lead SOT-23 RJ-6 3,000 R34 1 Z = RoHS Compliant Part. ©2010–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D08440-0-6/18(C) Rev. C | Page 22 of 22
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