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ADG819BCBZ-REEL7产品简介:
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参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC SWITCH SPDT 6WLCSP模拟开关 IC 500mOhm 5.5V CMOS 2:1 Mux/SPDT |
产品分类 | |
品牌 | Analog Devices Inc |
产品手册 | |
产品图片 | |
rohs | 过渡期间无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 开关 IC,模拟开关 IC,Analog Devices ADG819BCBZ-REEL7- |
数据手册 | |
产品型号 | ADG819BCBZ-REEL7 |
产品种类 | 模拟开关 IC |
供应商器件封装 | 6-UCSP |
其它名称 | ADG819BCBZ-REEL7-ND |
功能 | |
包装 | 带卷 (TR) |
商标 | Analog Devices |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
导通电阻 | 600 毫欧 |
封装 | Reel |
封装/外壳 | 6-WFBGA,CSPBGA |
封装/箱体 | WLCSP-6 |
工作温度 | -40°C ~ 85°C |
工作电源电压 | 5.5 V |
工厂包装数量 | 3000 |
开关数量 | 1 |
开关电压—最大值 | 5.5 V |
开关电流—最大值 | 200 mA |
开关配置 | SPDT |
最大功率耗散 | 5 uW |
最大工作温度 | + 125 C |
最小工作温度 | - 40 C |
标准包装 | 3,000 |
电压-电源,单/双 (±) | 1.8 V ~ 5.5 V |
电压源 | 单电源 |
电流-电源 | 1nA |
电源电压-最大 | 5.5 V |
电源电压-最小 | 0 V |
电源电流—最大值 | 1 uA |
电路 | 1 x SPDT - NC/NO |
空闲时间—最大值 | 10 ns |
系列 | ADG819 |
运行时间—最大值 | 35 ns |
0.5 Ω, CMOS, 1.8 V to 5.5 V, 2:1 Mux/SPDT Switch Data Sheet ADG819 FEATURES FUNCTIONAL BLOCK DIAGRAM Low on resistance: 0.8 Ω maximum at 125°C ADG819 0.25 Ω maximum on resistance flatness S2 1.8 V to 5.5 V single supply D 200 mA current carrying capability S1 Automotive temperature range: –40°C to +125°C IN Rail-to-rail operation F6a-lseta sdw SitOcTh-i2n3g, t8im-leeasd MSOP, and 6-ball WLCSP packages SFOWRIT AC HLEOSG SICH 1O WINNPUT 02801-001 Figure 1. Typical power consumption (<0.01 µW) TTL-/CMOS-compatible inputs Pin compatible with the ADG719 APPLICATIONS Power routing Battery-powered systems Communication systems Data acquisition systems Cellular phones Modems PCMCIA cards Hard drives Relay replacement GENERAL DESCRIPTION The ADG819 is a monolithic, CMOS, single-pole, double-throw PRODUCT HIGHLIGHTS (SPDT) switch. This switch is designed on a submicron process 1. Very low on resistance, 0.5 Ω typical. that provides low power dissipation yet gives high switching 2. 1.8 V to 5.5 V single-supply operation. speed, low on resistance, and low leakage currents. 3. High current carrying capability. Low power consumption and an operating supply range of 4. Tiny 6-lead SOT-23, 8-lead MSOP, and 6-ball, 1.14 mm × 1.8 V to 5.5 V make the ADG819 ideal for battery-powered, 2.18 mm WLCSP packages. portable instruments. Each switch of the ADG819 conducts equally well in both directions when on. The ADG819 exhibits break-before-make switching action, thus preventing momentary shorting when switching channels. The ADG819 is available in a 6-lead SOT-23 package, an 8-lead MSOP package, and in a 6-ball WLCSP package. This chip occupies only a 1.14 mm × 2.18 mm area, making it the ideal candidate for space-constrained applications. Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2002–2012 Analog Devices, Inc. All rights reserved.
ADG819 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................5 Applications ....................................................................................... 1 Pin Configurations and Function Descriptions ............................6 Functional Block Diagram .............................................................. 1 Typical Performance Characteristics ..............................................7 General Description ......................................................................... 1 Test Circuits ........................................................................................9 Product Highlights ........................................................................... 1 Terminology .................................................................................... 11 Revision History ............................................................................... 2 Outline Dimensions ....................................................................... 12 Specifications ..................................................................................... 3 Ordering Guide .......................................................................... 13 Absolute Maximum Ratings ............................................................ 5 REVISION HISTORY 5/12—Rev. 0 to Rev. A Updated Format .................................................................. Universal Deleted ADG820 ................................................................ Universal Changes to General Description .................................................... 1 Changes to Table 1 ............................................................................ 3 Changes to Table 2 ............................................................................ 4 Change to WLCSP θ Thermal Impedance Parameter, JA Table 3 ................................................................................................ 5 Added Table 5 and Table 6; Renumbered Sequentially ............... 6 Deleted Test Circuit 6; Renumbered Sequentially ....................... 8 Changes to Figure 11 to Figure 14 .................................................. 8 Changes to Terminology Section.................................................. 11 Updated Outline Dimensions ....................................................... 12 Changes to Ordering Guide .......................................................... 13 5/02—Revision 0: Initial Version Rev. A | Page 2 of 16
Data Sheet ADG819 SPECIFICATIONS V = 5 V ± 10%, GND = 0 V, unless otherwise noted. DD Table 1. −40°C to –40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V V DD On Resistance, R 1 0.5 Ω typ V = 0 V to V , I = 100 mA; see Figure 16 ON S DD S 0.6 0.7 0.8 Ω max On Resistance Match Between 0.06 Ω typ V = 0 V to V , I = 100 mA S DD S Channels, ΔR 1 ON 0.08 0.1 0.12 Ω max On Resistance Flatness, R 1 0.1 Ω typ V = 0 V to V , I = 100 mA FLAT(ON) S DD S 0.17 0.2 0.25 Ω max LEAKAGE CURRENTS V = 5.5 V DD Source Off Leakage, I (Off) ±0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V; see Figure 17 S S D ±0.25 ±3 ±10 nA max Channel On Leakage, I , I (On) ±0.01 nA typ V = V = 1 V, or V = V = 4.5 V; see Figure 18 D S S D S D ±0.25 ±3 ±25 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.005 μA typ V = V or V INL INH IN INL INH ±0.1 μA max Digital Input Capacitance, C 5 pF typ IN DYNAMIC CHARACTERISTICS2 t 35 ns typ R = 50 Ω, C = 35 pF, V = 3 V; see Figure 19 ON L L S 45 50 55 ns max t 10 ns typ R = 50 Ω, C = 35 pF, V = 3 V; see Figure 19 OFF L L S 16 18 21 ns max Break-Before-Make Time Delay, 5 ns typ R = 50 Ω, C = 35 pF, V = V = 3 V; see Figure 20 L L S1 S2 t BBM 1 ns min Charge Injection 20 pC typ V = 2.5 V, R = 0 Ω, C = 1 nF; see Figure 21 S S L Off Isolation –71 dB typ R = 50 Ω, C = 5 pF, f = 100 kHz; see Figure 22 L L Channel-to-Channel Crosstalk –72 dB typ R = 50 Ω, C = 5 pF, f = 100 kHz; see Figure 24 L L Bandwidth, –3 dB 17 MHz typ R = 50 Ω, C = 5 pF; see Figure 23 L L C (Off) 80 pF typ f = 1 MHz S C , C (On) 300 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 5.5 V, digital inputs = 0 V or 5.5 V DD I 0.001 μA typ DD 1.0 2.0 μA max 1 On resistance parameters tested with I = 10 mA. S 2 Guaranteed by design; not subject to production test. Rev. A | Page 3 of 16
ADG819 Data Sheet V = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. DD Table 2. –40°C to –40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V V DD On Resistance, R 1 0.7 Ω typ V = 0 V to V , I = 100 mA; see Figure 16 ON S DD S 1.4 1.5 1.6 Ω max On Resistance Match Between 0.06 Ω typ V = 0 V to V , I = 100 mA S DD S Channels, ΔR 1 ON 0.13 0.13 Ω max On Resistance Flatness, R 1 0.25 Ω typ V = 0 V to V , I = 100 mA FLAT(ON) S DD S LEAKAGE CURRENTS V = 3.6 V DD Source Off Leakage, I (Off) ±0.01 nA typ V = 3.3 V/1 V, V = 1 V/3.3 V; see Figure 17 S S D ±0.25 ±3 ±10 nA max Channel On Leakage, I , I (On) ±0.01 nA typ V = V = 1 V, or V = V = 3.3 V; see Figure 18 D S S D S D ±0.25 ±3 ±25 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.005 μA typ V = V or V INL INH IN INL INH ±0.1 μA max Digital Input Capacitance, C 5 pF typ IN DYNAMIC CHARACTERISTICS2 t 40 ns typ R = 50 Ω, C = 35 pF, V = 1.5 V; see Figure 19 ON L L S 60 65 70 ns max t 10 ns typ R = 50 Ω, C = 35 pF, V = 1.5 V; see Figure 19 OFF L L S 16 18 21 ns max Break-Before-Make Time Delay, 40 ns typ R = 50 Ω, C = 35 pF, V = V = 1.5 V; see Figure 20 L L S1 S2 t BBM 1 ns min Charge Injection 10 pC typ V = 1.5 V, R = 0 Ω,C = 1 nF; see Figure 21 S S L Off Isolation −71 dB typ R = 50 Ω, C = 5 pF, f = 100 kHz; see Figure 22 L L Channel-to-Channel Crosstalk −72 dB typ R = 50 Ω, C = 5 pF, f = 100 kHz; see Figure 24 L L Bandwidth, –3 dB 17 MHz typ R = 50 Ω, C = 5 pF; see Figure 23 L L C (Off) 80 pF typ f = 1 MHz S C , C (On) 300 pF typ f = 1 MHz D S POWER REQUIREMENTS V = 3.6 V, digital Inputs = 0 V or 3.6 V DD I 0.001 μA typ DD 1.0 2.0 μA max 1 On resistance parameters tested with I = 10 mA. S 2 Guaranteed by design; not subject to production test. Rev. A | Page 4 of 16
Data Sheet ADG819 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under Absolute Maximum Ratings T = 25°C, unless otherwise noted A may cause permanent damage to the device. This is a stress Table 3. rating only; functional operation of the device at these or any Parameter Rating other conditions above those indicated in the operational V to GND −0.3 V to +7 V section of this specification is not implied. Exposure to absolute DD Analog Inputs1 −0.3 V to V + 0.3 V or 30 mA, maximum rating conditions for extended periods may affect DD whichever occurs first device reliability. Digital Inputs1 −0.3 V to V + 0.3 V or 30 mA, DD Only one absolute maximum rating can be applied at any whichever occurs first one time. Peak Current, Sx or D 400 mA (pulsed at 1 ms, 10% duty cycle maximum) Table 4. Truth Table for the ADG819 Continuous Current, Sx or D 200 mA IN Switch S1 Switch S2 Operating Temperature Range 0 On Off Industrial −40°C to +85°C 1 Off On Automotive −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C ESD CAUTION MSOP θ Thermal Impedance 206°C/W JA θ Thermal Impedance 44°C/W JC SOT-23 (4-Layer Board) θ Thermal Impedance 119°C/W JA WLCSP (4-Layer Board) θ Thermal Impedance 80°C/W JA Lead Temperature, Soldering 300°C (10 sec) IR Reflow, Peak Temperature 235°C (<20 sec) 1 Overvoltages at IN, Sx, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. A | Page 5 of 16
ADG819 Data Sheet PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS S2 IN 1 6 D VDD 2 5 S1 GND IN 1 6 S2 3 4 VDD 2 ADG819 5 D ADG819 GND 3 (NToOt Pto V SIEcaWle) 4 S1 02801-002 (BUMPNSO TTAO TTP OT VH SIEEC WBAOLETTOM) 02801-003 Figure 2. 6-Lead SOT-23 Pin Configuration Figure 3. 6-Ball WLCSP Pin Configuration Table 5. 6-Lead SOT-23 and 6-Ball WLCSP Pin Function Descriptions Pin No. SOT-23 WLCSP Mnemonic Description 1 6 IN Logic Control Input. 2 5 V Most Positive Power Supply Potential. DD 3 4 GND Ground (0 V) Reference. 4 3 S1 Source Terminal. Can be an input or output. 5 2 D Drain Terminal. Can be an input or output. 6 1 S2 Source Terminal. Can be an input or output. D 1 8 S2 S1 2 ADG819 7 NC GND 3 TOP VIEW 6 IN (Not to Scale) VDDN4C = NO CONNECT5 NC 02801-004 Figure 4. 8-Lead MSOP Pin Configuration Table 6. 8-Lead MSOP Pin Function Descriptions Pin No. Mnemonic Description 1 D Drain Terminal. Can be an input or output. 2 S1 Source Terminal. Can be an input or output. 3 GND Ground (0 V) Reference. 4 V Most Positive Power Supply Potential. DD 5 NC No Connect. Do not connect to this pin. 6 IN Logic Control Input. 7 NC No Connect. Do not connect to this pin. 8 S2 Source Terminal. Can be an input or output. Rev. A | Page 6 of 16
Data Sheet ADG819 TYPICAL PERFORMANCE CHARACTERISTICS 1.0 1.0 TA = 25°C VDD= 3V 0.9 VDD= 2.7V 0.8 0.8 TA = +125°C TA = +85°C CE (Ω)00..76 VDD= 3V Ω)CE (0.6 N N A A ST0.5 ST RESI0.4 VDD= 3.3V RESI0.4 TA = +25°C ON 0.3 VDD=4.5V VDD= 5V ON TA = –40°C VDD= 5.5V 0.2 0.2 0.1 00 1 2 VD, VS (V3) 4 5 02801-005 00 0.5 1.0 VD,1 V.5S (V) 2.0 2.5 3.0 02801-008 Figure 5. On Resistance vs. V , V Figure 8. On Resistance vs. V , V for Different Temperatures D S D S 10 1.0 TA= 25C VDD= 5V 9 VDD= 1.8V 8 0.8 Ω) 7 Ω) TA = +125°C CE ( 6 CE (0.6 TA = +85°C N N A A ST 5 ST SI SI RE 4 RE0.4 ON 3 ON TA = +25°C TA = –40°C 2 0.2 1 00 0.2 0.4 0.6 0V.D8, VS 1(V.0) 1.2 1.4 1.6 1.8 02801-006 00 1 2 VD, VS (V)3 4 5 02801-009 Figure 6. On Resistance vs. V , V Figure 9. On Resistance vs. V , V for Different Temperatures D S D S 10 50 VDD = 3V, 5V 8 40 S (nA) 6 tON VDD= 3V VDD= 5V T URREN 4 E (ns) 30 C M AGE ID, IS (ON) TI 20 K 2 A LE tOFF VDD= 3V, 5V 10 0 IS(OFF) –20 20 40TEMPER60ATURE (°8C0) 100 120 02801-007 –040 –20 0 T2E0MPER40ATURE6 (0°C) 80 100 120 02801-010 Figure 7. Leakage Currents vs. Temperature Figure 10. t /t Times vs. Temperature ON OFF Rev. A | Page 7 of 16
ADG819 Data Sheet 250 1 TA = 25°C VDD = 3V, 5V 200 TA = 25C 0 150 C) –1 N (p100 dB) CTIO 50 NSE ( –2 ARGE INJE–500 VDD= 3V VDD= 5V ON RESPO –3 H –4 C –100 –5 –150 –2000 0.5 1.0 1.5 2.0 V2S. 5(V) 3.0 3.5 4.0 4.5 5.0 02801-011 –60.2 1 FREQUENCY (MHz) 10 30 02801-014 Figure 11. Charge Injection vs. V (Source Voltage) Figure 14. On Response vs. Frequency S 0 1.8 –10 TVAD=D 2=5 5°VC, 3V 1.6 TA = 25°C V) –20 E ( 1.4 G RISING OFF ISOLATION (dB)––––34560000 THRESHOLD VOLTA 0110....8206 FALLING C –70 OGI 0.4 L –80 0.2 –900.1 FREQUENCY (MHz) 1 2 02801-012 00 1 2 VDD3 (V) 4 5 6 02801-015 Figure 12. Off Isolation vs. Frequency Figure 15. Logic Threshold Voltage vs. Supply Voltage 0 –10 –20 B)–30 d ( K–40 L A T S–50 S O R C–60 –70 –80 –900.1 FREQUENCY (MHz) 1 2 02801-013 Figure 13. Crosstalk vs. Frequency Rev. A | Page 8 of 16
Data Sheet ADG819 TEST CIRCUITS IDS V1 S D IS (OFF) S D ID (OFF) VS RON = V1 / IDS 02801-016 VS VD 02801-017 Figure 16. On Resistance Figure 17. Off Leakage ID (ON) S D NC NC = NO CONNECT VD 02801-018 Figure 18. On Leakage VDD 0.1µF VDD VIN 50% 50% VOUT 90% 90% VS IN 5R0LΩ 3C5LpF tON tOFF GND 02801-019 Figure 19. Switching Times VDD 0.1µF VDD VIN 0V 50% 50% S1 VVSS12 S2 D 5R0LΩ 3C5LpVFOUT VOUT 0V90% 90% IN tBBM tBBM VIN GND 02801-020 Figure 20. Break-Before-Make Time Delay, t BBM VDD VOUT VOUT VDD QINJ = CL VOUT RS SW OFF SW OFF VOUT VIN VS IN 1CnLF SW ON SW ON GND VIN SW OFF SW OFF 02801-022 Figure 21. Charge Injection Rev. A | Page 9 of 16
ADG819 Data Sheet VDD 0.1µF VDD NETWORK ANALYZER S IN 50Ω 50Ω VS D VOUT RL GND 50Ω VIN OFF ISOLATION = 20 LOGVOVUST 02801-023 Figure 22. Off Isolation VDD 0.1µF VDD NETWORK ANALYZER S IN 50Ω VS D VOUT RL GND 50Ω VIN INSERTION LOSS = 20 LOGVOVUOTU WT IWTHITOHU STW SIWTCITHCH 02801-024 Figure 23. Bandwidth VDD 0.1µF NETWORK ANALYZER VDD S1 VOUT RL D 50Ω S2 5R0Ω 50Ω IN VS GND CHANNEL-TO-CHANNEL CROSSTALK = 20 LOGVOVUST 02801-025 Figure 24. Channel-to-Channel Crosstalk Rev. A | Page 10 of 16
Data Sheet ADG819 TERMINOLOGY t R ON ON Delay between applying the digital control input and the output Ohmic resistance between D and Sx. switching on. ΔR ON t On resistance match between any two channels, that is, R OFF ON Delay between applying the digital control input and the output maximum − R minimum. ON switching off. R FLAT(ON) t Flatness is defined as the difference between the maximum and BBM Off time or on time measured between the 90% points of both minimum value of on resistance as measured over the specified switches when switching from one address state to another. analog signal range. Charge Injection I (Off) S A measure of the glitch impulse transferred from the digital Source leakage current with the switch off. input to the analog output during switching. I , I (On) D S Channel-to-Channel Crosstalk Channel leakage current with the switch on. A measure of unwanted signal coupled through from one V (V) D S channel to another as a result of parasitic capacitance. Analog voltage on Terminal D and Terminal S. Off Isolation V INL A measure of unwanted signal coupling through an off switch. Maximum input voltage for Logic 0. Bandwidth V INH Frequency at which the output is attenuated by −3 dB. Minimum input voltage for Logic 1. On Response I (I ) INL INH Frequency response of the on switch. Input current of the digital input. C (Off) S Off switch source capacitance. C , C (On) D S On switch capacitance. Rev. A | Page 11 of 16
ADG819 Data Sheet OUTLINE DIMENSIONS 3.00 2.90 2.80 1.70 6 5 4 3.00 1.60 2.80 1.50 2.60 1 2 3 PIN1 INDICATOR 0.95BSC 1.90 BSC 1.30 1.15 0.90 1.45MAX 0.20MAX 0.95MIN 0.08MIN 0.55 0.15MAX 10° 0.45 0.05MIN 0.50MAX SPELAATNIENG 4° B0S.6C0 0.35 0.30MIN 0° COMPLIANTTOJEDECSTANDARDSMO-178-AB 12-16-2008-A Figure 25. 6-Lead Small Outline Transistor Package [SOT-23] (RJ-6) Dimensions shown in millimeters 3.20 3.00 2.80 8 5 5.15 3.20 4.90 3.00 4.65 2.80 1 4 PIN1 IDENTIFIER 0.65BSC 0.95 15°MAX 0.85 1.10MAX 0.75 0.80 0.15 0.40 6° 0.23 0.55 CO0P.0L50A.1N0ARICTOYMPLIANT0.T25OJEDECSTA0°NDARDS0M.0O9-187-AA 0.40 10-07-2009-B Figure 26. 8-Lead mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters Rev. A | Page 12 of 16
Data Sheet ADG819 0.67 0.57 1.34 0.44 0.47 1.14 0.36 0.94 0.28 SEATING 2 1 PLANE 0.32 NOM 0.50 BALL PITCH A BALLA1 IDENTIFIER 2.38 2.18 B 1.98 0.59 C (BALTLO SPI DVEI EDWOWN) 0C.O24P LMAANXARITY 0.5B(0BOATLTLO SMID EV IUEPW) 0.32 02-03-2012-A Figure 27. 6-Ball Wafer Level Chip Scale Package [WLCSP] (CB-6-1) Dimensions shown in millimeters ORDERING GUIDE Package Model1 Notes Temperature Range Package Description Option Branding2 ADG819BCBZ-REEL 3 –40°C to +85°C 6-Ball Wafer Level Chip Package [WLCSP] CB-6-1 SBC ADG819BCBZ-REEL7 3 –40°C to +85°C 6-Ball Wafer Level Chip Package [WLCSP] CB-6-1 SBC ADG819BRM –40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SNB ADG819BRM-REEL –40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SNB ADG819BRMZ –40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SBC ADG819BRMZ-REEL7 3 –40°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 SBC ADG819BRT-500RL7 3 –40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SNB ADG819BRT-REEL7 3 –40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SNB ADG819BRTZ-500RL7 3 –40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SBC ADG819BRTZ-REEL 3 –40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SBC ADG819BRTZ-REEL7 3 –40°C to +125°C 6-Lead Small Outline Transistor Package [SOT-23] RJ-6 SBC 1 Z = RoHS Compliant Part. 2 Branding on these packages is limited to three characters due to space constraints. 3 Contact factory for availability. Rev. A | Page 13 of 16
ADG819 Data Sheet NOTES Rev. A | Page 14 of 16
Data Sheet ADG819 NOTES Rev. A | Page 15 of 16
ADG819 Data Sheet NOTES ©2002–2012 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D02801-0-5/12(A) Rev. A | Page 16 of 16
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