4 Ω R , 4-/8-Channel ON ±15 V/+12 V/±5 V iCMOS Multiplexers Enhanced Product ADG1408-EP/ADG1409-EP FEATURES FUNCTIONAL BLOCK DIAGRAM 4.7 Ω maximum on resistance @ 25°C ADG1408-EP ADG1409-EP 0.5 Ω on resistance flatness S1 S1A Up to 190 mA continuous current DA Fully specified at ±15 V/+12 V/±5 V S4A 3 V logic-compatible inputs D Rail-to-rail operation S1B Break-before-make switching action DB 16-lead TSSOP S8 S4B ENHANCED PRODUCT FEATURES 1-OF-8 1-OF-4 DECODER DECODER Supports defense and aerospace applications Mi(lAitQarEyC t setmanpdearardtu) re range: −55°C to +125°C A0A1A2EN A0 A1 EN 09248-001 Figure 1. Controlled manufacturing baseline One assembly and test site One fabrication site Enhanced product change notification Qualification data available on request GENERAL DESCRIPTION The ADG1408-EP/ADG1409-EP are monolithic iCMOS® analog The ultralow on resistance and on resistance flatness of these multiplexers comprising eight single channels and four switches make them ideal solutions for data acquisition and differential channels, respectively. The ADG1408-EP switches gain switching applications where low distortion is critical. one of eight inputs to a common output, as determined by the iCMOS construction ensures ultralow power dissipation, 3-bit binary address lines, A0, A1, and A2. The ADG1409-EP making the parts ideally suited for portable and battery- switches one of four differential inputs to a common differential powered instruments. output, as determined by the 2-bit binary address lines, A0 and Full details about this enhanced product are available in the A1. An EN input on both devices is used to enable or disable ADG1408/ADG1409 data sheet, which should be consulted in the device. When disabled, all channels are switched off. conjunction with this data sheet. The iCMOS (industrial CMOS) modular manufacturing process PRODUCT HIGHLIGHTS combines high voltage CMOS (complementary metal-oxide 1. 4 Ω on resistance semiconductor) and bipolar technologies. It enables the devel- 2. 0.5 Ω on resistance flatness opment of a wide range of high performance analog ICs capable 3. 3 V logic-compatible digital input, V = 2.0 V, V = 0.8 V of 33 V operation in a footprint that no other generation of high INH INL 4. 16-lead TSSOP package voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2011–2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com

ADG1408-EP/ADG1409-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1 5 V Dual Supply .............................................................................7 Enhanced Product Features ............................................................ 1 Continuous Current per Channel, S or D ..................................8 Functional Block Diagram .............................................................. 1 Absolute Maximum Ratings ............................................................9 General Description ......................................................................... 1 ESD Caution...................................................................................9 Product Highlights ........................................................................... 1 Pin Configurations and Function Descriptions ......................... 10 Revision History ............................................................................... 2 Typical Performance Characteristics ........................................... 12 Specifications ..................................................................................... 3 Test Circuits ..................................................................................... 14 15 V Dual Supply .......................................................................... 3 Outline Dimensions ....................................................................... 16 12 V Single Supply ........................................................................ 5 Ordering Guide .......................................................................... 16 REVISION HISTORY 11/2017—Rev. A to Rev. B Changes to Ordering Guide .......................................................... 16 8/2017—Rev. 0 to Rev. A Changes to Table 6 .......................................................................... 10 Changes to Table 7 .......................................................................... 11 3/2011—Revision 0: Initial Version Rev. B | Page 2 of 16

Enhanced Product ADG1408-EP/ADG1409-EP SPECIFICATIONS 15 V DUAL SUPPLY V = +15 V ± 10%, V = −15 V ± 10%, GND = 0 V, unless otherwise noted. DD SS Table 1. −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range V to V V SS DD On Resistance (R ) 4 Ω typ V = ±10 V, I = −10 mA; see Figure 12 ON S S 4.7 6.7 Ω max V = +13.5 V, V = −13.5 V DD SS On Resistance Match Between 0.2 Ω typ V = ±10 V, I = −10 mA S S Channels (ΔR ) 0.78 1.1 Ω max ON On Resistance Flatness (R ) 0.5 Ω typ V = ±10 V, I = −10 mA FLAT(ON) S S 0.72 0.92 Ω max LEAKAGE CURRENTS V = +16.5 V, V = −16.5 V DD SS Source Off Leakage, IS (Off) ±0.04 nA typ VS = ±10 V, VD = 10 V; see Figure 13 ±0.2 ±5 nA max ∓ Drain Off Leakage, ID (Off) ±0.04 nA typ VS = ±10 V, VD = 10 V; see Figure 13 ±0.45 ±30 nA max ∓ Channel On Leakage, I , I (On) ±0.1 nA typ V = V = ±10 V; see Figure 14 D S S D ±1.5 ±30 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current ±0.005 µA typ V = V or V IN GND DD ±0.1 µA max Digital Input Capacitance, C 4 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 140 ns typ R = 100 Ω, C = 35 pF TRANSITION L L 170 240 ns max V = 10 V, see Figure 15 S Break-Before-Make Time Delay, t 50 ns typ R = 100 Ω, C = 35 pF BBM L L 19 ns min V = V = 10 V; see Figure 16 S1 S2 t (EN) 100 ns typ R = 100 Ω, C = 35 pF ON L L 120 165 ns max V = 10 V; see Figure 17 S t (EN) 100 ns typ R = 100 Ω, C = 35 pF OFF L L 120 170 ns max V = 10 V; see Figure 17 S Charge Injection −50 pC typ V = 0 V, R = 0 Ω, C = 1 nF; see Figure 18 S S L Off Isolation −70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 19 L L Channel-to-Channel Crosstalk −70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 20 L L Total Harmonic Distortion, THD + N 0.025 % typ R = 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; L see Figure 22 −3 dB Bandwidth R = 50 Ω, C = 5 pF; see Figure 21 L L ADG1408-EP 60 MHz typ ADG1409-EP 115 MHz typ Insertion Loss 0.24 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 21 L L C (Off) 14 pF typ f = 1 MHz S C (Off) D ADG1408-EP 80 pF typ f = 1 MHz ADG1409-EP 40 pF typ f = 1 MHz C , C (On) D S ADG1408-EP 135 pF typ f = 1 MHz ADG1409-EP 90 pF typ f = 1 MHz Rev. B | Page 3 of 16

ADG1408-EP/ADG1409-EP Enhanced Product −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments POWER REQUIREMENTS V = +16.5 V, V = −16.5 V DD SS I 0.002 µA typ Digital inputs = 0 V or V DD DD 1 µA max 220 µA typ Digital inputs = 5 V 420 µA max I 0.002 µA typ Digital inputs = 0 V, 5 V or V SS DD 1 µA max V /V ±4.5/±16.5 V min/max DD SS 1 Guaranteed by design, not subject to production test. Rev. B | Page 4 of 16

Enhanced Product ADG1408-EP/ADG1409-EP 12 V SINGLE SUPPLY V = 12 V ± 10%, V = 0 V, GND = 0 V, unless otherwise noted. DD SS Table 2. −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 to V V DD On Resistance (R ) 6 Ω typ V = 0 V to 10 V, I = −10 mA; see Figure 12 ON S S 8 11.2 Ω max V = 10.8 V, V = 0 V DD SS On Resistance Match 0.2 Ω typ V = 0 V to 10 V, I = −10 mA S S Between Channels (ΔR ) 0.82 1.1 Ω max ON On Resistance Flatness (R ) 1.5 Ω typ V = 0 V to 10 V, I = −10 mA FLAT(ON) S S 2.5 2.8 Ω max LEAKAGE CURRENTS V = 13.2 V DD Source Off Leakage, I (Off) ±0.04 nA typ V = 1 V/10 V, V = 10 V/1 V; see Figure 13 S S D ±0.2 ±5 nA max Drain Off Leakage, I (Off) ±0.04 nA typ V = 1 V/10 V, V = 10 V/1 V; see Figure 13 D S D ±0.45 ±37 nA max Channel On Leakage, I , I (On) ±0.06 nA typ V = V = 1 V or 10 V; see Figure 14 D S S D ±0.44 ±32 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current ±0.005 µA typ V = V or V IN GND DD ±0.1 µA max Digital Input Capacitance, C 5 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 200 ns typ R = 100 Ω, C = 35 pF TRANSITION L L 260 380 ns max V = 8 V; see Figure 15 S Break-Before-Make Time Delay, t 90 ns typ R = 100 Ω, C = 35 pF BBM L L 40 ns min V = V = 8 V; see Figure 16 S1 S2 t (EN) 160 ns typ R = 100 Ω, C = 35 pF ON L L 210 285 ns max V = 8 V; see Figure 17 S t (EN) 115 ns typ R = 100 Ω, C = 35 pF OFF L L 145 200 ns max V = 8 V; see Figure 17 S Charge Injection −12 pC typ V = 6 V, R = 0 Ω, C = 1 nF; see Figure 18 S S L Off Isolation −70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 19 L L Channel-to-Channel Crosstalk −70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 20 L L −3 dB Bandwidth R = 50 Ω, C = 5 pF; see Figure 21 L L ADG1408-EP 36 MHz typ ADG1409-EP 72 MHz typ Insertion Loss 0.5 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 21 L L C (Off) 25 pF typ f = 1 MHz S C (Off) D ADG1408-EP 165 pF typ f = 1 MHz ADG1409-EP 80 pF typ f = 1 MHz C , C (On) D S ADG1408-EP 200 pF typ f = 1 MHz ADG1409-EP 120 pF typ f = 1 MHz Rev. B | Page 5 of 16

ADG1408-EP/ADG1409-EP Enhanced Product −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments POWER REQUIREMENTS V = 13.2 V DD I 0.002 µA typ Digital inputs = 0 V or V DD DD 1 µA max 220 µA typ Digital inputs = 5 V 420 µA max V 5/16.5 V min/max V = 0 V, GND = 0 V DD SS 1 Guaranteed by design, not subject to production test. Rev. B | Page 6 of 16

Enhanced Product ADG1408-EP/ADG1409-EP 5 V DUAL SUPPLY V = +5 V ± 10%, V = −5 V ± 10%, GND = 0 V, unless otherwise noted. DD SS Table 3. −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range V to V V SS DD On Resistance (R ) 7 Ω typ V = ±4.5 V, I = −10 mA; see Figure 12 ON S S 9 12 Ω max V = +4.5 V, V = −4.5 V DD SS On Resistance Match Between 0.3 Ω typ V = ±4.5 V, I = −10 mA S S Channels (ΔR ) 0.78 1.1 Ω max ON On Resistance Flatness (R ) 1.5 Ω typ V = ±4.5 V; I = −10 mA FLAT(ON) S S 2.5 3 Ω max LEAKAGE CURRENTS V = +5.5 V, V = −5.5 V DD SS Source Off Leakage, IS (Off) ±0.02 nA typ VS = ±4.5 V, VD = 4.5 V; see Figure 13 ±0.2 ±5 nA max ∓ Drain Off Leakage, ID (Off) ±0.02 nA typ VS = ±4.5 V, VD = 4.5 V; see Figure 13 ±0.45 ±20 nA max ∓ Channel On Leakage, I , I (On) ±0.04 nA typ V = V = ±4.5 V; see Figure 14 D S S D ±0.3 ±22 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current ±0.005 µA typ V = V or V IN GND DD ±0.1 µA max Digital Input Capacitance, C 5 pF typ IN DYNAMIC CHARACTERISTICS1 Transition Time, t 330 ns typ R = 100 Ω, C = 35 pF TRANSITION L L 440 550 ns max V = 5 V; see Figure 15 S Break-Before-Make Time Delay, t 100 ns typ R = 100 Ω, C = 35 pF BBM L L 45 ns min V = V = 5 V; see Figure 16 S1 S2 t (EN) 245 ns typ R = 100 Ω, C = 35 pF ON L L 330 440 ns max V = 5 V; see Figure 17 S t (EN) 215 ns typ R = 100 Ω, C = 35 pF OFF L L 285 370 ns max V = 5 V; see Figure 17 S Charge Injection –10 pC typ V = 0 V, R = 0 Ω, C = 1 nF; see Figure 18 S S L Off Isolation –70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 19 L L Channel-to-Channel Crosstalk –70 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 20 L L Total Harmonic Distortion, THD + N 0.06 % typ R = 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz; L see Figure 22 −3 dB Bandwidth R = 50 Ω, C = 5 pF; see Figure 21 L L ADG1408-EP 40 MHz typ ADG1409-EP 80 MHz typ Insertion Loss 0.5 dB typ R = 50 Ω, C = 5 pF, f = 1 MHz; see Figure 21 L L C (Off) 20 pF typ f = 1 MHz S C (Off) D ADG1408-EP 130 pF typ f = 1 MHz ADG1409-EP 65 pF typ f = 1 MHz C , C (On) D S ADG1408-EP 180 pF typ f = 1 MHz ADG1409-EP 120 pF typ f = 1 MHz Rev. B | Page 7 of 16

ADG1408-EP/ADG1409-EP Enhanced Product −55°C to Parameter +25°C +125°C Unit Test Conditions/Comments POWER REQUIREMENTS V = +5.5 V, V = −5.5 V DD SS I 0.001 µA typ Digital inputs = 0 V or V DD DD 1 µA max I 0.001 µA typ Digital inputs = 0 V, 5 V or V SS DD 1 µA max V /V ±4.5/±16.5 V min/max DD SS 1 Guaranteed by design, not subject to production test. CONTINUOUS CURRENT PER CHANNEL, S OR D Table 4. Parameter 25°C 85°C 125°C Unit Test Conditions/Comments CONTINUOUS CURRENT, S or D1 15 V Dual Supply V = +13.5 V, V = −13.5 V DD SS ADG1408-EP 190 105 50 mA max ADG1409-EP 140 85 45 mA max 12 V Single Supply V = 10.8 V, V = 0 V DD SS ADG1408-EP 160 95 50 mA max ADG1409-EP 120 75 40 mA max 5 V Dual Supply V = +4.5 V, V = −4.5 V DD SS ADG1408-EP 155 90 45 mA max ADG1409-EP 115 70 40 mA max 1 Guaranteed by design, not subject to production test. Rev. B | Page 8 of 16

Enhanced Product ADG1408-EP/ADG1409-EP ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted. A Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a Table 5. stress rating only; functional operation of the product at these Parameter Rating or any other conditions above those indicated in the operational V to V 35 V DD SS section of this specification is not implied. Operation beyond V to GND −0.3 V to +25 V DD the maximum operating conditions for extended periods may V to GND +0.3 V to −25 V SS affect product reliability. Analog Inputs, Digital Inputs1 V − 0.3 V to V + 0.3 V SS DD or 30 mA, whichever Only one absolute maximum rating can be applied at any occurs first one time. Continuous Current, S or D Table 4 data + 10% Peak Current, S or D (Pulsed at 1 ms, 350 mA 10% Duty Cycle Maximum) ESD CAUTION Operating Temperature Range −55°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C θ 150.4°C/W JA θ 50°C/W JC Lead Temperature, Soldering Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C 1 Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. B | Page 9 of 16

ADG1408-EP/ADG1409-EP Enhanced Product PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS A0 1 16 A1 EN 2 15 A2 VSS 3 ADG1408-EP 14 GND S1 4 TOP VIEW 13 VDD (Not to Scale) S2 5 12 S5 S3 6 11 S6 S4 7 10 S7 D 8 9 S8 09248-002 Figure 2. ADG1408-EP Pin Configuration Table 6. ADG1408-EP Pin Function Descriptions Pin No. Mnemonic Description 1 A0 Logic Control Input. 2 EN Active High Digital Input. When low, the device is disabled and all switches are off. When high, Ax logic inputs determine on switches. 3 V Most Negative Power Supply Potential. In single supply applications, it can be connected SS to ground. 4 S1 Source Terminal 1. Can be an input or an output. 5 S2 Source Terminal 2. Can be an input or an output. 6 S3 Source Terminal 3. Can be an input or an output. 7 S4 Source Terminal 4. Can be an input or an output. 8 D Drain Terminal. Can be an input or an output. 9 S8 Source Terminal 8. Can be an input or an output. 10 S7 Source Terminal 7. Can be an input or an output. 11 S6 Source Terminal 6. Can be an input or an output. 12 S5 Source Terminal 5. Can be an input or an output. 13 V Most Positive Power Supply Potential. DD 14 GND Ground (0 V) Reference. 15 A2 Logic Control Input. 16 A1 Logic Control Input. Table 7. ADG1408-EP Truth Table A2 A1 A0 EN On Switch X X X 0 None 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 Rev. B | Page 10 of 16

Enhanced Product ADG1408-EP/ADG1409-EP A0 1 16 A1 EN 2 15 GND VSS 3 ADG1409-EP 14 VDD S1A 4 TOP VIEW 13 S1B (Not to Scale) S2A 5 12 S2B S3A 6 11 S3B S4A 7 10 S4B DA 8 9 DB 09248-003 Figure 3. ADG1409-EP Pin Configuration (TSSOP) Table 8. ADG1409-EP Pin Function Descriptions Pin No. Mnemonic Description 1 A0 Logic Control Input. 2 EN Active High Digital Input. When low, the device is disabled and all switches are off. When high, Ax logic inputs determine on switches. 3 V Most Negative Power Supply Potential. In single supply applications, it can be connected SS to ground. 4 S1A Source Terminal 1A. Can be an input or an output. 5 S2A Source Terminal 2A. Can be an input or an output. 6 S3A Source Terminal 3A. Can be an input or an output. 7 S4A Source Terminal 4A. Can be an input or an output. 8 DA Drain Terminal A. Can be an input or an output. 9 DB Drain Terminal B. Can be an input or an output. 10 S4B Source Terminal 4B. Can be an input or an output. 11 S3B Source Terminal 3B. Can be an input or an output. 12 S2B Source Terminal 2B. Can be an input or an output. 13 S1B Source Terminal 1B. Can be an input or an output. 14 V Most Positive Power Supply Potential. DD 15 GND Ground (0 V) Reference. 16 A1 Logic Control Input. Table 9. ADG1409-EP Truth Table A1 A0 EN On Switch Pair X X 0 None 0 0 1 1 0 1 1 2 1 0 1 3 1 1 1 4 Rev. B | Page 11 of 16

ADG1408-EP/ADG1409-EP Enhanced Product TYPICAL PERFORMANCE CHARACTERISTICS 8 450 VDD = +15V 7 VSS = –15V 400 6 350 VDD = +5V VSS = –5V Ω) 300 E ( 5 +125°C ESISTANC 4 ++8255°°CC TIME (ns) 225000 VVDSSD == 0+V12V R 3 ON –40°C 150 VDD = +15V 2 –55°C VSS = –15V 100 1 50 0 0 –15 –10 SOUR–C5E OR DRA0IN VOLTA5GE (V) 10 15 09248-004 –55 –35 –15 5TEMP2E5RATU4R5E (°C6)5 85 105 125 09248-007 Figure 4. On Resistance vs. VD, VS for Different Temperatures; Figure 7. Transition Time vs. Temperature 15 V Dual Supply 12 1.0 VDD = +5V IS (OFF) +– VDD = +15V VSS = –5V 0.8 ID (OFF) +– VSS = –15V 10 0.6 IISD ((OOFFFF)) ––++ VBIAS = +10V/–10V CE (Ω) 8 ++18255°°CC ENT (nA) 00..24 IIDD,,IISS ((OONN)) +––+ N R A R T 6 U 0 S C SI +25°C E N RE 4 –40°C KAG –0.2 O –55°C EA –0.4 L –0.6 2 –0.8 0 –1.0 –5 –4 –3SOU–2RCE O–1R DRA0IN VO1LTAG2E (V) 3 4 5 09248-005 0 10 20 3T0EMPE4R0ATURE50 (°C) 60 70 80 09248-011 Figure 5. On Resistance vs. VD, VS for Different Temperatures; Figure 8. Leakage Current vs. Temperature; 5 V Dual Supply 15 V Dual Supply 10 14 IS (OFF) +– VDD = +15V 9 12 ID (OFF) +– VSS = –15V IS (OFF) –+ VBIAS = +10V/–10V 8 ID (OFF) –+ ANCE (Ω) 76 ++18255°°CC RRENT (nA) 1086 IIDD,,IISS ((OONN)) +––+ ON RESIST 543 +––452055°°°CCC AKAGE CU 42 E L 2 0 1 VDD = 12V –2 VSS = 0V 00 2 SOUR4CE OR DRA6IN VOLTA8GE (V) 10 12 09248-006 –40 20 40TEMPER6A0TURE (°8C0) 100 120 09248-012 Figure 9. Leakage Current vs. Temperature; Figure 6. On Resistance vs. VD, VS for Different Temperatures; 15 V Dual Supply 12 V Single Supply Rev. B | Page 12 of 16

Enhanced Product ADG1408-EP/ADG1409-EP 10 18 IS (OFF) +– VDD = +5V IS (OFF) +– VDD = 12V 9 ID (OFF) +– VSS = –5V 16 ID (OFF) +– VSS = 0V IS (OFF) –+ VBIAS = +4.5V/–4.5V IS (OFF) –+ VBIAS = 1V/10V 8 ID (OFF) –+ 14 ID (OFF) –+ nA) 7 IIDD,,IISS ((OONN)) +––+ nA) 12 IIDD,,IISS ((OONN)) +––+ T ( 6 T ( EN EN 10 RR 5 RR U U 8 E C 4 E C G G 6 KA 3 KA LEA 2 LEA 4 1 2 0 0 –1 –2 0 20 40TEMPER6A0TURE (°8C0) 100 120 09248-015 0 20 40TEMPER6A0TURE (°8C0) 100 120 09248-013 Figure 10. Leakage Current vs. Temperature; Figure 11. Leakage Current vs. Temperature; 5 V Dual Supply 12 V Single Supply Rev. B | Page 13 of 16

ADG1408-EP/ADG1409-EP Enhanced Product TEST CIRCUITS V IS (OFF) ID (OFF) ID(ON) S D S D S D A A NC A IDS VS 09248-020 VS VD 09248-021 NC = NO CONNECT VD 09248-022 Figure 12. On Resistance Figure 13. Off Leakage Figure 14. On Leakage VDD VSS 3V tr < 20ns tf < 20ns VDD VSS ADDRESS 50% 50% DRIVE (VIN) A0 0V VIN 50Ω A1 S1 VS1 S2 TO S7 A2 t t TRANSITION TRANSITION S8 VS8 90% ADG1408-EP1 OUTPUT OUTPUT 2.4V EN D GND 100Ω 35pF 90% 1SIMILAR CONNECTION FOR ADG1409-EP. 09248-023 Figure 15. Address to Output Switching Times, tTRANSITION VDD VSS 3V VDD VSS ADDRESS A0 DRIVE (VIN) S1 VS 0V VIN 50Ω A1 S2 TO S7 A2 S8 80% 80% ADG1408-EP1 OUTPUT OUTPUT 2.4V EN D GND 100Ω 35pF t BBM 1SIMILAR CONNECTION FOR ADG1409-EP. 09248-024 Figure 16. Break-Before-Make Delay, tBBM VDD VSS 3V VDD VSS ENABLE 50% 50% A0 DRIVE (VIN) S1 VS A1 S2 TO S8 0V A2 tON (EN) tOFF (EN) ADG1408-EP1 OUTPUT 0.9VO 0.9VO EN D OUTPUT VIN 50Ω GND 100Ω 35pF 1SIMILAR CONNECTION FOR ADG1409-EP. 09248-025 Figure 17. Enable Delay, tON (EN), tOFF (EN) Rev. B | Page 14 of 16

Enhanced Product ADG1408-EP/ADG1409-EP VDD VSS VDD VSS 3V A0 A1 VIN A2 ADG1408-EP1 VOUT ΔVOUT RS S D VOUT EN QINJ = CL × ΔVOUT VS GND C1nLF VIN 1SIMILAR CONNECTION FOR ADG1409-EP. 09248-026 Figure 18. Charge Injection 0.1µFVDD VSS 0.1µF VDD VSS 0.1µF 0.1µF NETWORK VDD VSS ANALYZER VDD VSS ANNEATLWYOZREKR S 50Ω 50Ω S 50Ω VS VS D VOUT D RL VOUT 50Ω RL GND 50Ω GND OFF ISOLATION = 20 log VVOSUT 09248-027 INSERTION LOSS = 20 logVOVUOT UWT IWTHITOHU STW SIWTCITHCH 09248-029 Figure 19. Off Isolation Figure 21. Insertion Loss VDD VSS 0.1µF 0.1µF NETWORK VDD VSS ANALYZER VDD VSS 0.1µF 0.1µF VOUT RL S1 AUDIO PRECISION 50Ω VDD VSS S2 D R50Ω RS S IN VS VS GND D V p-p VIN RL VOUT 10kΩ CHANNEL-TO-CHANNEL CROSSTALK = 20 logVVOSUT 09248-028 GND 09248-030 Figure 20. Channel-to-Channel Crosstalk Figure 22. THD + Noise Rev. B | Page 15 of 16

ADG1408-EP/ADG1409-EP Enhanced Product OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 6.40 4.40 BSC 4.30 1 8 PIN 1 1.20 MAX 0.15 0.20 0.05 0.09 0.75 0.30 8° 0.60 B0.S6C5 0.19 SPELAANTIENG 0° 0.45 COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 23. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters ORDERING GUIDE Model1 Temperature Range Package Description Package Option ADG1408SRUZ-EP −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1408SRUZ-EP-RL7 −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1408SRU-EP −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1408SRU-EP-RL7 −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1409SRUZ-EP −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1409SRUZ-EP-RL7 −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1409SRU-EP −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG1409SRU-EP-RL7 −55°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 1 Z = RoHS Compliant Part. ©2011–2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D09248-0-11/17(B) Rev. B | Page 16 of 16

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: ADG1409YCPZ-REEL7 V62/11612-01XB ADG1408YCPZ-REEL7 ADG1409YRUZ-REEL ADG1408YRUZ-REEL7 ADG1408YRUZ-REEL ADG1409YRUZ-REEL7 ADG1408YRUZ ADG1409YRUZ