130 μV Maximum Offset Voltage Op Amp in TSOT AD8677 FEATURES PIN CONFIGURATIONS Low offset voltage: 130 μV max OUT 1 5 V+ Input offset drift: 1.5 μV/°C max AD8677 V– 2 LHoigwh n goaiisne,: C0M.2R5R μ aVn pd- pP S RR: 115 dB min +IN 3 (NToOt Pto V SIEcaWle) 4 –IN05578-001 Low supply current: 1.1 mA Figure 1. 5-Lead TSOT (UJ-5) Wide supply voltage range: ±4 V to ±18 V operation NULL 1 8 NULL APPLICATIONS –IN 2 AD8677 7 V+ Medical and industrial instrumentation TOP VIEW +IN 3 (Not to Scale) 6 OUT Sensors and controls TRhTeDrsm ocouple V– 4NC = NO CONNECT5 NC05578-002 Strain bridges Figure 2. 8-Lead SOIC_N (R-8) Shunt current measurements Precision filters GENERAL DESCRIPTION The AD8677 is the next generation of precision, ultralow offset amplifiers. It builds on the high performance of the OP07 and integrates lower power (1.1 mA typical), lower input bias current (±1 nA maximum), and higher CMRR/PSRR (130 dB) in the small TSOT package. Operation is fully specified from ±5 V to ±15 V supply. The AD8677 provides higher accuracy than industry-standard OP07-type amplifiers due to Analog Devices’ iPolar™ process, which supports enhanced performance in a smaller footprint. These performance enhancements include wider output swing, lower power, and higher CMRR (common-mode rejection ratio) and PSRR (power supply rejection ratio). The AD8677 maintains stability of offsets and gain virtually regardless of variations in time or temperature. Excellent linearity and gain accuracy can be maintained at high closed-loop gains. The AD8677 is fully specified over the extended industrial tem- perature range of −40°C to +125°C. The AD8677 amplifier is available in the tiny, 5-lead TSOT and the popular 8-lead, narrow SOIC lead-free packages. Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 © 2005-2011 Analog Devices, Inc. All rights reserved.

AD8677 TABLE OF CONTENTS Features..............................................................................................1  Absolute Maximum Ratings............................................................5  Applications.......................................................................................1  Thermal Resistance.......................................................................5  General Description.........................................................................1  ESD Caution...................................................................................5  Pin Configurations...........................................................................1  Typical Performance Characteristics..............................................6  Revision History...............................................................................2  Outline Dimensions.......................................................................13  Specifications.....................................................................................3  Ordering Guide..........................................................................13  REVISION HISTORY 6/11—Rev. 0 to Rev. A Change to Figure 43.......................................................................12 Updated Outline Dimensions.......................................................13 11/05—Revision 0: Initial Version Rev. A | Page 2 of 16

AD8677 SPECIFICATIONS V = ±5.0 V, T = +25°C, unless otherwise specified. S A Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 40 130 μV OS −40°C ≤ TA ≤ +125°C 350 μV Input Bias Current I 0.2 1 nA B −40°C ≤ TA ≤ +125°C 1 nA Input Offset Current I 0.1 1 nA OS −40°C ≤ TA ≤ +125°C 1 nA Input Voltage Range −3.5 +3.5 V Common-Mode Rejection Ratio CMRR V = ±3 V 120 127 dB CM −40°C ≤ TA ≤ +125°C 120 dB Open-Loop Gain AVO RL = 2 kΩ to ground, VO = ±3 V 1000 10000 V/mV −40°C ≤ TA ≤ +125°C 1000 V/mV ΔV /ΔT −40°C ≤ TA ≤ +125°C 0.5 1.4 μV/°C OS OUTPUT CHARACTERISTICS Output Voltage Swing VOUT RL = 10 kΩ to ground ±3.95 ±4.1 V −40°C ≤ TA ≤ +125°C ±3.95 V R = 2 kΩ to ground ±3.9 ±4 V L −40°C ≤ TA ≤ +125°C ±3.9 V Short-Circuit Limit I 27 mA SC Output Current I V = 3.5 V 15 mA O O POWER SUPPLY Power Supply Rejection Ratio PSRR V = ±4.0 V to ±18.0 V 115 130 dB S −40°C ≤ TA ≤ +125°C 110 dB Supply Current/Amplifier I V = 0 V 1.1 1.25 mA SY O −40°C ≤ TA ≤ +125°C 1.7 mA DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 0.2 V/μs L Gain Bandwidth Product GBP 0.6 MHz Phase Margin 80 Degrees NOISE PERFORMANCE Voltage Noise e 0.1 Hz to 10 Hz 0.28 μV p-p n p-p Voltage Noise Density en f = 1 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.074 pA/√Hz Rev. A | Page 3 of 16

AD8677 V = ±15 V, T = +25°C, unless otherwise specified. S A Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 45 130 μV OS −40°C ≤ TA ≤ +125°C 350 μV Input Bias Current I 0.2 1 nA B −40°C ≤ TA ≤ +125°C 1 nA Input Offset Current I 0.2 1 nA OS −40°C ≤ TA ≤ +125°C 1 nA Input Voltage Range −13.5 +13.5 V Common-Mode Rejection Ratio CMRR V = ±13.0 V 120 140 dB CM −40°C ≤ TA ≤ +125°C 120 dB Open Loop Gain AVO RL = 2 kΩ to ground, VO = ±11 V 1000 10000 V/mV −40°C ≤ TA ≤ +125°C 1000 V/mV Offset Voltage Drift ΔV /ΔT −40°C ≤ TA ≤ +125°C 0.5 1.5 μV/°C OS OUTPUT CHARACTERISTICS Output Voltage Swing VOUT RL = 10 kΩ to ground ±13.95 14 V −40°C ≤ TA ≤ +125°C ±13.9 V R = 2 kΩ to ground ±13.75 13.8 V L −40°C ≤ TA ≤ +125°C ±13.7 V Short Circuit Limit I 30 mA SC Output Current I V = 13.5 V 15 mA O O POWER SUPPLY Power Supply Rejection Ratio PSRR V = ±4.0 V to ±18.0 V 115 130 dB S −40°C ≤ TA ≤ +125°C 110 dB Supply Current/Amplifier I V = 0 V 1.1 1.3 mA SY O −40°C ≤ TA ≤ +125°C 1.8 mA DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 0.2 V/μs L Gain Bandwidth Product GBP 0.6 MHz Phase Margin 80 Degrees NOISE PERFORMANCE Voltage Noise e 0.1 Hz to 10 Hz 0.25 μV p-p n p-p Voltage Noise Density en f = 1 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.074 pA/√Hz Rev. A | Page 4 of 16

AD8677 ABSOLUTE MAXIMUM RATINGS Table 3. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress Parameter Value rating only; functional operation of the device at these or any Supply Voltage ±18 V other conditions above those indicated in the operational Input Voltage ±V Supply section of this specification is not implied. Exposure to absolute Differential Input Voltage ±0.7 V maximum rating conditions for extended periods may affect Output Short-Circuit Duration to GND Indefinite device reliability. Storage Temperature Range UJ-5, R Package −65°C to +150°C THERMAL RESISTANCE Operating Temperature Range −40°C to +125°C θ is specified for the worst-case conditions, that is, a device JA Junction Temperature Range soldered in a circuit board for surface-mount packages. RM, R Package −65°C to +150°C Lead Temperature (Soldering, 10 sec) +300°C Table 4. Package Type θ θ Unit JA JC 5-Lead TSOT (UJ-5) 207 61 °C/W 8-Lead SOIC (R-8) 158 43 °C/W ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. A | Page 5 of 16

AD8677 TYPICAL PERFORMANCE CHARACTERISTICS 50 45 VS = ±15V VS = ±15V 45 40 40 35 S S R 35 R FIE FIE 30 LI 30 LI MP MP 25 F A 25 F A O O 20 R 20 R E E B B 15 M 15 M U U N N 10 10 05 05578-003 50 05578-048 –100 –80 –60 –40 –20 0 20 40 60 80 100 0 0.15 0.30 0.45 0.60 0.75 0.90 1.05 1.20 VOS (µV) TCVOS (µV/°C) Figure 3. Input Offset Voltage Distribution Figure 6. TCVOS vs. Number of Amplifiers 40 200 VS = ±5V VS = ±15V 35 150 S 30 100 R E LIFI 25 50 MP V) F A 20 (µS 0 O O R V E 15 –50 B M U N 10 –100 05 05578-004 ––210500 05578-005 –100 –80 –60 –40 –20 0 20 40 60 80 100 –50 0 50 100 150 VOS (µV) TEMPERATURE (°C) Figure 4. Input Offset Voltage Distribution Figure 7. Offset Voltage vs. Temperature 50 200 VS = ±5V VS = ±5V 150 40 S 100 R E LIFI 30 50 MP V) OF A (µOS 0 R 20 V E –50 B M U N –100 10 0 05578-047 ––210500 05578-006 0 0.15 0.30 0.45 0.60 0.75 0.90 1.05 –50 0 50 100 150 TCVOS (µV/°C) TEMPERATURE (°C) Figure 5. TCVOS vs. Number of Amplifiers Figure 8. Offset Voltage vs. Temperature Rev. A | Page 6 of 16

AD8677 1.6 –13.92 VS = ±15V –13.94 RL = 10kΩ 1.4 VS = ±15V –13.96 1.2 –13.98 I (mA)SY 1.0 VS = ±5V V (V)OL––1144..0020 0.8 –14.04 –14.06 0.6 0.4 05578-007 ––1144..1008 05578-011 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Supply Current vs. Temperature Figure 12. −VOUT vs. Temperature 14.40 –3.98 VRSL == ±1105kVΩ –4.00 VRSL == ±150VkΩ 14.35 –4.02 14.30 –4.04 V) V) –4.06 V (OH14.25 V (OL –4.08 14.20 –4.10 –4.12 14.15 14.10 05578-009 ––44..1164 05578-012 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 10. +VOUT vs. Temperature Figure 13. −VOUT vs. Temperature 4.45 0 VRSL == ±150VkΩ VS=±15V 4.40 –0.1 4.35 –0.2 V (V)OH 4.30 I (nA)B –0.3 4.25 –0.4 4.20 4.15 05578-010 –0.5 05578-013 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE(°C) Figure 11. +VOUT vs. Temperature Figure 14. Input Bias Current vs. Temperature Rev. A | Page 7 of 16

AD8677 0 150 VS=±5V VS = ±4V TO ±18V –0.05 –0.10 140 –0.15 B) (nA)B –0.20 RR (d I S P –0.25 130 –0.30 ––00..4305 05578-014 120 05578-019 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE(°C) TEMPERATURE (°C) Figure 15. Input Bias Current vs. Temperature Figure 18. PSRR vs. Temperature 146 40 144 142 VS = ±15V VS = ±15V 140 30 138 dB) 134 A) RR ( 134 (mC VS = ±5V M S C I 132 20 130 128 112246 VS = ±5V 05578-015 10 05578-020 –50 0 50 100 150 –50 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 16. CMRR vs. Temperature Figure 19. Short Circuit Current vs. Temperature 16000 1.4 RL = 2kΩ 14000 1.2 VS = ±15V 12000 A) 1.0 m mV) 10000 ENT ( 0.8 V/ RR A (VO 8000 Y CU 0.6 VS = ±5V PL P 6000 U 0.4 S 4000 0.2 2000 05578-017 0 05578-022 –50 0 50 100 150 0 10 20 30 40 TEMPERATURE (°C) SUPPLY VOLTAGE (V) Figure 17. Open-Loop Gain vs. Temperature Figure 20. Supply Current vs. Total Supply Voltages Rev. A | Page 8 of 16

AD8677 10 50 VS= ±15V VS=±15V VIN=28mV VOH = +VOUT 40 G=+100 CRLL==∞20pF B) d N ( 30 V) AI V – V(SYOUT 1 VOL = –VOUT ED-LOOP G 20 G=+10 S 10 O L C G=+1 0 0.1 05578-023 –10 05578-026 0.01 0.1 1 10 100 100 1k 10k 100k 1M ILOAD (mA) FREQUENCY(Hz) Figure 21. Output Voltage Swing vs. Load Current Figure 24. Closed-Loop Gain vs. Frequency 10 50 VS= ±5V VS=±5V 40 G=+100 CVRILLN===∞2208pmFV B) d – V(V)SYOUT 1 VOL = –VOUT VOH = +VOUT D-LOOP GAIN ( 2300 G=+10 V E S 10 O L C G=+1 0 0.1 05578-024 –10 05578-027 0.01 0.1 1 10 100 100 1k 10k 100k 1M ILOAD (mA) FREQUENCY(Hz) Figure 22. Output Voltage Swing vs. Load Current Figure 25. Closed-Loop Gain vs. Frequency 100 100 30 VS= ±15V VIN= ±50mV 80 G = +1 25 PHASE 80 –OS 60 es) +OS N 40 60 N (Degre OT (%) 20 GAI 20 40 MARGI ERSHO 15 GAIN SE OV 10 0 HA P ––4200 VCRΦSLLm=== = ±∞2 1085p0V FDegrees 020 05578-025 05 05578-028 100 1k 10k 100k 1M 10M 0 2 4 6 8 10 12 FREQUENCY (Hz) CLOAD (nF) Figure 23. Open-Loop Gain and Phase vs. Frequency Figure 26. Overshoot vs. Capacitive Load Rev. A | Page 9 of 16

AD8677 30 100 VS= ±5V VS= ±15V VIN= ±50mV –OS VIN= 28mV 25 G = +1 RCLL== ∞20pF +OS 10 G = +100 %) 20 SHOOT ( 15 (Ω)OUT 1 G = +10 R R VE G = +1 O 10 0.1 5 0 05578-029 0.01 05578-032 0 2 4 6 8 10 12 10 100 1k 10k 100k 1M CLOAD (nF) FREQUENCY (Hz) Figure 27. Overshoot vs. Capacitive Load Figure 30. Output Impedance vs. Frequency 112 100 VS= ±15V VVSIN== ±258VmV 110 RL=∞ CL= 20pF G = +100 108 10 106 MRR (dB) 104 R (Ω)OUT 1 G = +10 C 102 G = +1 100 0.1 9986 05578-030 0.01 05578-033 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 28. CMRR vs. Frequency Figure 31. Output Impedance vs. Frequency 100 100 VS = ±15V –PSRR 80 Hz) V/ n Y ( T B) 60 NSI RR (d E DE 10 S S P 40 OI N E G +PSRR A T 20 L O V 0 05578-031 1 05578-034 10 100 1k 10k 100k 1M 0.1 1 10 100 1k FREQUENCY (Hz) FREQUENCY (Hz) Figure 29. PSRR vs. Frequency Figure 32. Voltage Noise Density vs. Frequency Rev. A | Page 10 of 16

AD8677 10 VS=±15V VS = ±5V CL = 1nF G = +1 VIN = 4V p-p V) 1 DI V/ i (pA/ Hz)n OLTAGE (1 2 V 0.1 T U P T U O 0.010.1 1 10 100 1k05578-035 05578-039 FREQUENCY(Hz) TIME (100µs/DIV) Figure 33. Current Noise Density vs. Frequency Figure 36. Large Signal Transient 400mV VCGSL = == + ±115nVFAND ±15V 200mV GVVSI N= = =– ±12100500VmV V) VIN = 100mV p-p VIN RECOVERY = 1µs DI 0V V/ m 0 10 –200mV E ( AG 2 0V T L O UT V –5V VOUT P UT –10V O 05578-036 ––1250VV 05578-040 TIME (100µs/DIV) TIME (10µs/DIV) Figure 34. Small Signal Transient Figure 37. Positive Overload Recovery VS = ±15V 400mV CL = 1nF VS = ±15V GVI N= =+ 14V p-p 200mV GVI N= =– 120000mV V) VIN RECOVERY = 5µs DI 0V V/ 1 E ( –200mV G A T 2 OL 15V V T PU 10V UT VOUT O 5V TIME (100µs/DIV) 05578-038 –05VV 05578-041 TIME (10µs/DIV) Figure 35. Large Signal Transient Figure 38. Negative Overload Recovery Rev. A | Page 11 of 16

AD8677 1200mV VS = ±5V VS = ±15V 600mV VGI N= =– 16000mV VN p-p = 0.24µV 0V VIN RECOVERY = 2.4µs DIV) V/ µ –600mV 0.2 E ( 0V OIS 1 N –2V VOUT GE A T L –4V VO ––68VV 05578-042 05578-045 TIME (4µs/DIV) TIME (1s/DIV) Figure 39. Positive Overload Recovery Figure 42. Voltage Noise (0.1 Hz to 10 Hz) 1200mV 20kΩ VS = ±5V V+ 600mV VGI N= =– 16000mV – 2 – 1 8 VIN RECOVERY = 5.6µs 7 0V INPUT AD8677 6 OUTPUT + 3 + 4 VOS TRIM RANGE IS –600mV TYPICALLY ±3.5mV 4V V– 05578-049 VOUT 2V Figure 43. Optional Offset Nulling Circuit 0V ––24VV 05578-043 TIME (4µs/DIV) Figure 40. Negative Overload Recovery VS = ±5V VIN VIN = ±5.7V VOUT 2 05578-044 TIME (400µs/DIV) Figure 41. No Phase Reversal Rev. A | Page 12 of 16

AD8677 OUTLINE DIMENSIONS 2.90 BSC 5.00(0.1968) 4.80(0.1890) 5 4 8 5 1.60 BSC 2.80 BSC 4.00(0.1574) 6.20(0.2441) 1 2 3 3.80(0.1497) 1 4 5.80(0.2284) 0.95 BSC 1.27(0.0500) 0.50(0.0196) 1.90 BSC 1.75(0.0688) 0.25(0.0099) 45° *00..7900 MMIANX BSC 0.25(0.0098) 1.35(0.0532) 8° 0.10(0.0040) 0° *1.00 MAX 00..2008 COPL0A.1N0ARITSYEATING 00..5311((00..00210212)) 0.25(0.0098) 10..2470((00..00510507)) 8° PLANE 0.17(0.0067) 0.10 MAX 0.50 SEATING 4° 0.60 0.30 PLANE 0° 0.45 COMPLIANTTOJEDECSTANDARDSMS-012-AA *CTHOEM PEXLICAENPTT TIOON J OEDF EPCA CSTKAANGDEA HREDIGS HMTO A-1N9D3 -TAHBICWKINTHESS. 0.30 100708-A C(RINEOFNPEATRRREOENNLCLTEIHNEOGSNDELISYM)AEANNRDSEIAORRNOESUNANORDETEDAIN-POMPFRIFLOLMPIMIRLELIATIMTEEERTFSEO;RIRNECUQHSUEDIVIINMAELDENENSSTIIOGSNNFS.OR 012407-A Figure 44. 5-Lead Thin Small Outline Transistor Package [TSOT] Figure 45. 8-Lead Standard Small Outline Package [SOIC_N] (UJ-5) Narrow Body Dimensions shown in millimeters (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model1 Temperature Range Package Description Package Option Branding AD8677ARZ −40°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8 AD8677ARZ-REEL −40°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8 AD8677ARZ-REEL7 −40°C to +125°C 8-Lead Standard Small Outline Package [SOIC_N] R-8 AD8677AUJZ-R2 −40°C to +125°C 5-Lead Thin Small Outline Transistor Package [TSOT] UJ-5 A0E AD8677AUJZ-REEL −40°C to +125°C 5-Lead Thin Small Outline Transistor Package [TSOT] UJ-5 A0E AD8677AUJZ-REEL7 −40°C to +125°C 5-Lead Thin Small Outline Transistor Package [TSOT] UJ-5 A0E 1 Z = RoHS Compliant Part. Rev. A | Page 13 of 16

AD8677 NOTES Rev. A | Page 14 of 16

AD8677 NOTES Rev. A | Page 15 of 16

AD8677 NOTES © 2005-2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05578-0-6/11(A) Rev. A | Page 16 of 16