Low Noise, Precision 16 V CMOS, Rail-to-Rail Operational Amplifiers AD8661/AD8662/AD8664 FEATURES PIN CONFIGURATIONS Low offset voltage: 100 μV maximum @ V = 5 V S NC 1 8 NC Low input bias current: 1 pA maximum –IN 2 AD8661 7 V+ NC 1 AD8661 8 NC Single-supply operation: 5 V to 16 V +IN 3 (NToOtPtoVSIEcaWle) 6 OUT –IN 2 7 V+ LWUoniwdite yn -bogaiasniend: w1st0iad nbthVle:/ √4H MzH z V– N4C=NOCONNECT5 NC 05200-002 +VIN– 34 NC=NOCONNECT 65 ONCUT05200-035 Small package options Figure 1. AD8661, 8-Lead SOIC_N Figure 2. AD8661, 8-Lead LFCSP_VD 3 mm × 3 mm 8-lead LFCSP (R-8) (CP-8-2) 8-lead MSOP and narrow SOIC OUTA 1 8 V+ OUTA 1 8 V+ 14-lead TSSOP and narrow SOIC –INA 2 AD8662 7 OUTB –INA 2 AD8662 7 OUTB TOPVIEW TOPVIEW ASePnPsoLrIsC ATIONS +INVA– 34 (NottoScale) 65 –+IINNBB 05200-001 +INVA– 34 (NottoScale) 65 –+IINNBB 05200-004 Figure 3. AD8662, 8-Lead SOIC_N Figure 4. AD8662, 8-Lead MSOP Medical equipment (R-8) (RM-8) Consumer audio Photodiode amplification OUT A 1 14 OUT D OUT A 1 14 OUT D ADC drivers –IN A 2 AD8664 13 –IN D –IN A 2 AD8664 13 –IN D +IN A 3 TOP VIEW 12 +IN D +IN A 3 TOP VIEW 12 +IN D V+ 4 (Not to Scale) 11 V– V+ 4 (Not to Scale) 11 V– +IN B 5 10 +IN C +IN B 5 10 +IN C –IN B 6 9 –IN C –IN B 6 9 –IN C OUT B 7 8 OUT C OUT B 7 8 OUT C 05200-036 05200-037 Figure 5. AD8664, 14-Lead SOIC_N Figure 6. AD8664, 14-Lead TSSOP (R-14) (RU-14) GENERAL DESCRIPTION monitoring equipment can take advantage of the high input The AD8661/AD8662/AD8664 are rail-to-rail output, single- impedance, low voltage and current noise, and wide bandwidth. supply amplifiers that use the Analog Devices, Inc., patented DigiTrim® trimming technique to achieve low offset voltage. The single AD8661 is available in a narrow 8-lead SOIC The AD866x series features extended operating ranges, with package and a very thin, dual lead, 8-lead LFCSP. The AD8661 supply voltages up to 16 V. It also features low input bias SOIC_N package is specified over the extended industrial current, wide signal bandwidth, and low input voltage and temperature range of −40°C to +125°C. The AD8661 current noise. LFCSP_VD is specified over the industrial temperature range of −40°C to +85°C. The AD8662 is available in a narrow 8-lead The combination of low offset, very low input bias current, and SOIC package and an 8-lead MSOP, both specified over the a wide supply range makes these amplifiers useful in a wide extended industrial temperature range of −40°C to +125°C. The variety of applications usually associated with higher priced AD8664 is available in a narrow 14-lead SOIC package and a JFET amplifiers. Systems using high impedance sensors, such as 14-lead TSSOP, both with an extended industrial temperature photodiodes, benefit from the combination of low input bias range of −40°C to +125°C. current, low noise, low offset, and wide bandwidth. The wide operating voltage range meets the demands of high performance ADCs and DACs. Audio applications and medical Rev. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.

AD8661/AD8662/AD8664 TABLE OF CONTENTS Features..............................................................................................1 AD8661 Electrical Characteristics—LFCSP_VD Only............5 Applications.......................................................................................1 AD8661 Electrical Characteristics—LFCSP_VD Only............6 Pin Configurations...........................................................................1 Absolute Maximum Ratings............................................................7 General Description.........................................................................1 Thermal Resistance.......................................................................7 Revision History...............................................................................2 ESD Caution...................................................................................7 Specifications.....................................................................................3 Typical Performance Characteristics..............................................8 AD8661/AD8662/AD8664 Electrical Characteristics— Outline Dimensions.......................................................................13 SOIC_N, MSOP, and TSSOP......................................................3 Ordering Guide..........................................................................15 AD8661/AD8662/AD8664 Electrical Characteristics— SOIC_N, MSOP, and TSSOP......................................................4 REVISION HISTORY 7/06—Rev. C to Rev. D Changes to Table 1.............................................................................3 Added AD8664...................................................................Universal Changes to Table 2.............................................................................4 Added 14-Lead SOIC_N and 14-Lead TSSOP...............Universal Changes to Table 3.............................................................................5 Changes to Features..........................................................................1 Changes to Table 4.............................................................................6 Changes to Table 1............................................................................3 Changes to Table 5.............................................................................7 Changes to Table 2............................................................................4 Updated Outline Dimensions.......................................................13 Changes to Table 3............................................................................5 Changes to Ordering Guide..........................................................13 Changes to Table 4............................................................................6 1/06—Rev. 0 to Rev. A Changes to Table 5 and Table 6.......................................................7 Added LFCSP_VD.............................................................Universal Changes to Figure 29......................................................................11 Changes to Table 1.............................................................................3 Updated Outline Dimensions.......................................................13 Changes to Table 2.............................................................................4 Changes to Ordering Guide..........................................................15 Changes to Ordering Guide..........................................................13 5/06—Rev. B to Rev. C 9/05—Revision 0: Initial Version Changes to Ordering Guide..........................................................13 3/06—Rev. A to Rev. B Added AD8662...................................................................Universal Added MSOP......................................................................Universal Rev. D | Page 2 of 16

AD8661/AD8662/AD8664 SPECIFICATIONS AD8661/AD8662/AD8664 ELECTRICAL CHARACTERISTICS—SOIC_N, MSOP, AND TSSOP V = 5.0 V, V = V/2, T = 25°C, unless otherwise noted. S CM S A Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V V = V/2 30 100 μV OS CM S AD8661 −40°C < T < +85°C 1000 μV A AD8661 −40°C < T < +125°C 1400 μV A AD8662 −40°C < T < +125°C 1000 μV A AD8664 −40°C < T < +125°C 1200 μV A Input Bias Current I 0.3 1 pA B −40°C < T < +85°C 50 pA A −40°C < T < +125°C 300 pA A Input Offset Current I 0.2 0.5 pA OS −40°C < T < +85°C 20 pA A −40°C < T < +125°C 75 pA A Input Voltage Range −0.1 +3.0 V Common-Mode Rejection Ratio CMRR V = −0.1 V to +3.0 V 85 100 dB CM −40°C < T < +125°C 80 100 dB A Large Signal Voltage Gain A R = 2 kΩ, V = 0.5 V to 4.5 V 100 220 V/mV VO L O Offset Voltage Drift TCV OS AD8661 −40°C < T < +125°C 3 10 μV/°C A AD8662, AD8664 −40°C < T < +125°C 2 9 μV/°C A OUTPUT CHARACTERISTICS Output Voltage High V I = 1 mA 4.85 4.93 V OH L −40°C < T < +125°C 4.80 V A Output Voltage Low V I = 1 mA 50 100 mV OL L −40°C < T < +125°C 110 mV A Short-Circuit Current I ±19 mA SC Closed-Loop Output Impedance Z f = 1 MHz, A = 1 50 Ω OUT V POWER SUPPLY Supply Current per Amplifier I V = V/2 1.15 1.40 mA SY O S −40°C < T < +125°C 2.0 mA A DYNAMIC PERFORMANCE Slew Rate SR R = 2 kΩ 3.5 V/μs L Gain Bandwidth Product GBP 4 MHz Phase Margin Φ 65 Degrees O NOISE PERFORMANCE Peak-to-Peak Noise e p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p n Voltage Noise Density en f = 1 kHz 12 nV/√Hz f = 10 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.1 pA/√Hz Rev. D | Page 3 of 16

AD8661/AD8662/AD8664 AD8661/AD8662/AD8664 ELECTRICAL CHARACTERISTICS—SOIC_N, MSOP, AND TSSOP V = 16.0 V, V = V/2, T = 25°C, unless otherwise noted. S CM S A Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V V = V/2 50 160 μV OS CM S AD8661 −40°C < T < +85°C 1000 μV A AD8661 −40°C < T < +125°C 1400 μV A AD8662 −40°C < T < +125°C 1000 μV A AD8664 −40°C < T < +125°C 1200 μV A Input Bias Current I 0.3 1 pA B −40°C < T < +85°C 50 pA A −40°C < T < +125°C 300 pA A Input Offset Current I 0.2 0.5 pA OS −40°C < T < +85°C 20 pA A −40°C < T < +125°C 75 pA A Input Voltage Range −0.1 +14.0 V Common-Mode Rejection Ratio CMRR V = −0.1 V to +14.0 V 90 110 dB CM −40°C < T < +125°C 90 110 dB A Large Signal Voltage Gain A R = 2 kΩ, V = 0.5 V to 15.5 V 200 360 V/mV VO L O Offset Voltage Drift TCV OS AD8661 −40°C < T < +125°C 3 10 μV/°C A AD8662, AD8664 −40°C < T < +125°C 2 9 μV/°C A OUTPUT CHARACTERISTICS Output Voltage High V I = 1 mA 15.93 15.97 V OH L I = 10 mA 15.60 15.70 V L −40°C < T < +125°C 15.50 V A Output Voltage Low V I = 1 mA 24 50 mV OL L I = 10 mA 190 300 mV L −40°C < T < +125°C 350 mV A Short-Circuit Current I ±140 mA SC Closed-Loop Output Impedance Z f = 1 MHz, A = 1 45 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 5 V to 16 V 95 110 dB S −40°C < T < +125°C 95 115 dB A Supply Current per Amplifier I V = V/2 1.25 1.55 mA SY O S −40°C < T < +125°C 2.1 mA A DYNAMIC PERFORMANCE Slew Rate SR R = 2 kΩ 3.5 V/μs L Gain Bandwidth Product GBP 4 MHz Phase Margin Φ 65 Degrees O NOISE PERFORMANCE Peak-to-Peak Noise e p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p n Voltage Noise Density en f = 1 kHz 12 nV/√Hz f = 10 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.1 pA/√Hz Rev. D | Page 4 of 16

AD8661/AD8662/AD8664 AD8661 ELECTRICAL CHARACTERISTICS—LFCSP_VD ONLY V = 5.0 V, V = V/2, T = 25°C, unless otherwise noted. S CM S A Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V V = V/2 50 300 μV OS CM S −40°C < T < +85°C 2000 μV A Input Bias Current I 0.3 1 pA B −40°C < T < +85°C 50 pA A Input Offset Current I 0.2 0.5 pA OS −40°C < T < +85°C 20 pA A Input Voltage Range −0.1 +3.0 V Common-Mode Rejection Ratio CMRR V = −0.1 V to +3.0 V 85 100 dB CM −40°C < T < +85°C 80 100 dB A Large Signal Voltage Gain A R = 2 kΩ, V = 0.5 V to 4.5 V 100 240 V/mV VO L O Offset Voltage Drift TCV −40°C < T < +85°C 4 17 μV/°C OS A OUTPUT CHARACTERISTICS Output Voltage High V I = 1 mA 4.85 4.93 V OH L −40°C < T < +85°C 4.80 V A Output Voltage Low V I = 1 mA 50 100 mV OL L −40°C < T < +85°C 120 mV A Short-Circuit Current I ±19 mA SC Closed-Loop Output Impedance Z f = 1 MHz, A = 1 65 Ω OUT V POWER SUPPLY Supply Current per Amplifier I V = V/2 1.15 1.40 mA SY O S −40°C < T < +85°C 1.8 mA A DYNAMIC PERFORMANCE Slew Rate SR R = 2 kΩ 3.5 V/μs L Gain Bandwidth Product GBP 4 MHz Phase Margin Φ 65 Degrees O NOISE PERFORMANCE Peak-to-Peak Noise e p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p n Voltage Noise Density en f = 1 kHz 12 nV/√Hz f = 10 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.1 pA/√Hz Rev. D | Page 5 of 16

AD8661/AD8662/AD8664 AD8661 ELECTRICAL CHARACTERISTICS—LFCSP_VD ONLY V = 16.0 V, V = V/2, T = 25°C, unless otherwise noted. S CM S A Table 4. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V V = V/2 50 300 μV OS CM S −40°C < T < +85°C 2000 μV A Input Bias Current I 0.3 1 pA B −40°C < T < +85°C 50 pA A Input Offset Current I 0.2 0.5 pA OS −40°C < T < +85°C 20 pA A Input Voltage Range −0.1 +14.0 V Common-Mode Rejection Ratio CMRR V = −0.1 V to +14.0 V 90 110 dB CM −40°C < T < +85°C 90 110 dB A Large Signal Voltage Gain A R = 2 kΩ, V = 0.5 V to 15.5 V 200 420 V/mV VO L O Offset Voltage Drift TCV −40°C < T < +85°C 4 17 μV/°C OS A OUTPUT CHARACTERISTICS Output Voltage High V I = 1 mA 15.95 15.97 V OH L I = 10 mA 15.60 15.70 V L −40°C < T < +85°C 15.50 V A Output Voltage Low V I = 1 mA 24 50 mV OL L I = 10 mA 210 350 mV L −40°C < T < +85°C 400 mV A Short-Circuit Current I ±140 mA SC Closed-Loop Output Impedance Z f = 1 MHz, A = 1 45 Ω OUT V POWER SUPPLY Power Supply Rejection Ratio PSRR V = 5 V to 16 V 95 110 dB S −40°C < T < +85°C 95 115 dB A Supply Current per Amplifier I V = V/2 1.25 1.55 mA SY O S −40°C < T < +85°C 1.9 mA A DYNAMIC PERFORMANCE Slew Rate SR R = 2 kΩ 3.5 V/μs L Gain Bandwidth Product GBP 4 MHz Phase Margin Φ 65 Degrees O NOISE PERFORMANCE Peak-to-Peak Noise e p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p n Voltage Noise Density en f = 1 kHz 12 nV/√Hz f = 10 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.1 pA/√Hz Rev. D | Page 6 of 16

AD8661/AD8662/AD8664 ABSOLUTE MAXIMUM RATINGS Table 5. THERMAL RESISTANCE Parameter Rating θ is specified for the worst-case conditions, that is, a device Supply Voltage 18 V JA soldered in a circuit board for surface-mount packages. Input Voltage −0.1 V to V S Differential Input Voltage 18 V Table 6. Thermal Resistance Output Short-Circuit Duration to GND Indefinite Package Type θJA θJC Unit Storage Temperature Range −60°C to +150°C 8-Lead SOIC_N 121 43 °C/W Operating Temperature Range 8-Lead LFCSP_VD 751 181 °C/W R-8, RM-8, R-14, and RU-14 −40°C to +125°C 8-Lead MSOP 142 44 °C/W CP-8-2 −40°C to +85°C 14-Lead SOIC_N 88.2 56.3 °C/W Junction Temperature Range −65°C to +150°C 14-Lead TSSOP 114 23.3 °C/W Lead Temperature, Soldering (60 sec) 300°C 1 Exposed pad soldered to application board. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. D | Page 7 of 16

AD8661/AD8662/AD8664 TYPICAL PERFORMANCE CHARACTERISTICS 6000 300 VS=16V TA=25°C VS=5VAND16V VCM=–0.1VTO+14V 5000 250 S A) R p PLIFIE4000 RENT ( 200 M R OF A3000 S CU 150 ER BIA MB2000 UT 100 U P N N I 1000 50 0 05200-026 0 05200-032 –150 –100 –50 0 50 100 150 –40 –20 0 20 40 60 80 100 120 VOS(µV) TEMPERATURE(°C) Figure 7. Input Offset Voltage Distribution Figure 10. Input Bias Current vs. Temperature 16 10k VS=16V VDD=16V 14 TVACM==–480V°CTO+125°C mV) S 12 GE ( 1k R A F AMPLIFIE 108 TION VOLT 100 SVODUDR–CVINOHG MBER O 6 SATURA 10 VSIONLKING NU 4 UT TP 1 U 02 05200-017 O 0.1 05200-019 0 1 2 3 4 5 6 7 8 9 10 0.001 0.01 0.1 1 10 100 TCVOS(µV/°C) LOADCURRENT(mA) Figure 8. Offset Voltage Drift Distribution Figure 11. Output Swing Saturation Voltage vs. Load Current 300 110 VS=16V 100 IL = 1mA TA=25°C V) 200 m 90 GE ( 80 (VDD – VOH) AT VS = 5V A 100 OLT 70 V) N V 60 VOL AT VS = 5V µ O (OS 0 ATI 50 V UR (VDD – VOH) AT VS = 16V T 40 –100 A S T 30 U –200 UTP 20 VOL AT VS = 16V –300 05200-023 O 100 05200-030 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 –40 –20 0 20 40 60 80 100 120 COMMON-MODEVOLTAGE(V) TEMPERATURE (°C) Figure 9. Input Offset Voltage vs. Common-Mode Voltage Figure 12. Output Swing Saturation Voltage vs. Temperature, IL = 1 mA Rev. D | Page 8 of 16

AD8661/AD8662/AD8664 450 140 IL = 10mA VS=5VAND16V V) 400 120 m E ( 350 G LTA 300 (VDD – VOH) AT VS = 16V 100 O N V 250 dB) 80 RATIO 200 VOL AT VS = 16V MRR ( 60 U C T A 150 T S 40 PU 100 T OU 500 05200-031 200 05200-006 –40 –20 0 20 40 60 80 100 120 100 1k 10k 100k 1M 10M TEMPERATURE (°C) FREQUENCY(Hz) Figure 13. Output Swing Saturation Voltage vs. Temperature, IL = 10 mA Figure 16. CMRR vs. Frequency 80 0 140 RVSL==51V00AkΩND16V VS=5VAND16V 60 CL=15pF 45 s) 120 e e gr B) 40 90 De 100 N (d PHASE FT ( OOP GAI 200 GAIN 118305 HASE SHI SRR (dB) 8600 N-L P P P E O OP –20 225 LO 40 N- E P –40 270 O 20 –6010k 100k FREQUENCY(1HMz) 10M 315 05200-003 01k 10k FREQ1U00EkNCY(Hz) 1M 10M 05200-005 Figure 14. Open-Loop Gain and Phase Shift vs. Frequency Figure 17. PSRR vs. Frequency 1k 70 VDD = 16V VS = ±2.5 AND ±8V G = +1 100 %) 60 RL = 100kΩ T ( O 50 AV = 100 HO Ω) 10 ERS 40 Z (OUT 1 AV = 10 AV = 1 NAL OV 30 SIG OS+ L 20 L A 0.1 M OS– S 10 0.01 05200-007 0 05200-015 100 1k 10k 100k 1M 10M 10 100 1k FREQUENCY (Hz) LOAD CAPACITANCE (pF) Figure 15. Closed-Loop Output Impedance vs. Frequency Figure 18. Small Signal Overshoot vs. Load Capacitance Rev. D | Page 9 of 16

AD8661/AD8662/AD8664 1.8 100 VS=5VAND16V 1.6 80 VIN=100mV CL=200pF 60 G=+1 1.4 1.2 VS=16VVS=5V GE (mV) 2400 I (mA)SY 10..08 UT VOLTA –200 0.6 TP U –40 O 0.4 –60 0.20 05200-029 –1–0800 05200-010 –40 –20 0 20 40 60 80 100 120 TIME(0.5µs/DIV) TEMPERATURE(°C) Figure 19. Supply Current vs. Temperature Figure 22. Small Signal Transient Response 1400 8 VS=16V CL=200pF 1200 6 4 1000 V) GE ( 2 (µA)Y800 VOLTA 0 IS600 UT P –2 T U 400 O –4 2000 05200-027 ––86 05200-034 0 2 4 6 8 10 12 14 16 18 TIME(2µs/DIV) VS (V) Figure 20. Supply Current vs. Supply Voltage Figure 23. Large Signal Transient Response (Dual-Supply Configuration), TA = 25°C 2.0 VS = 16V VS=±2.5VAND±8V 100mV G = –100 1.5 VIN V) 1.0 µ E ( OIS 0.5 0V N AK 0 0V E P TO-–0.5 K- A PE–1.0 ––21..05 05200-009 –8V VO TIME (5µs/DIV) 05200-013 TIME(1s/DIV) Figure 21. 0.1 Hz to 10 Hz Input Voltage Noise Figure 24. Positive Overload Recovery Rev. D | Page 10 of 16

AD8661/AD8662/AD8664 16 VS=5V 0V TA=–40°CTO+125°C VS = 16V 14 VCM=2.5V G = –100 S 12 R –100mV VIN LIFIE 10 P M 8V VO OF A 8 R E 6 B M U N 4 0V 05200-014 02 05200-022 TIME (5µs/DIV) 0 1 2 3 4 5 6 7 8 9 10 TCVOS(µV/°C) Figure 25. Negative Overload Recovery Figure 28. Offset Voltage Drift Distribution 1k 200 VS=±2.5VAND±8V 150 VTAS == 255V°C Hz) V/ 100 n Y ( 100 SIT 50 OISE DEN V (µV)OS 0 N –50 E 10 G TA –100 L O V 1 05200-008 ––210500 05200-021 1 10 100 1k 10k –0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 FREQUENCY(Hz) COMMON-MODE VOLTAGE (V) Figure 26. Voltage Noise Density vs. Frequency Figure 29. Input Offset Voltage vs. Common-Mode Voltage 1800 10k 1600 VTVASCM===255V–°0C.1VTO+3V V) VDD=5V m FIERS11420000 LTAGE ( 1k AMPLI1000 ON VO 100 SVODUDR–CVINOHG NUMBER OF 864000000 TPUT SATURATI 101 VSIONLKING U 2000 05200-024 O 0.1 05200-020 –150 –100 –50 0 50 100 150 0.001 0.01 0.1 1 10 20 VOS(µV) LOADCURRENT(mA) Figure 27. Input Offset Voltage Distribution Figure 30. Output Swing Saturation Voltage vs. Load Current Rev. D | Page 11 of 16

AD8661/AD8662/AD8664 1k VDD = 5V VIN VS = 16V G = +1 100 AV = 100 V/DIV) VO 2 10 E ( Ω) AG Z (OUT 1 AV = 10 AV = 1 T VOLT U P T U O 0.1 0.01 05200-033 05200-012 100 1k 10k 100k 1M 10M TIME (0.2µs/DIV) FREQUENCY (Hz) Figure 31. Closed-Loop Output Impedance vs. Frequency Figure 33. No Phase Reversal 2.5 VS=±2.5V 2.0 CL=200pF G=+1 1.5 V) 1.0 E ( AG 0.5 T L O 0 V T U–0.5 P T OU–1.0 –1.5 ––22..50 05200-011 TIME(1µs/DIV) Figure 32. Large Signal Transient Response Rev. D | Page 12 of 16

AD8661/AD8662/AD8664 OUTLINE DIMENSIONS 5.00(0.1968) 4.80(0.1890) 8 5 4.00 (0.1574) 6.20 (0.2440) 3.80 (0.1497) 1 4 5.80 (0.2284) 1.27 (0.0500) 0.50 (0.0196) BSC 1.75 (0.0688) 0.25 (0.0099) 45° 0.25 (0.0098) 1.35 (0.0532) 8° 0.10 (0.0040) 0° COPLANARITY 0.51 (0.0201) 0.10 SEATING 0.31 (0.0122) 0.25 (0.0098) 10..2470 ((00..00510507)) PLANE 0.17 (0.0067) COMPLIANTTO JEDEC STANDARDS MS-012-AA C(RINOEFNPEATRRREOENNLCLTEIHN EOGSN EDLSIYM)AEANNRDSEI AORRNOESU NANORDEET DAIN-PO MPFRIFLO LMPIIMRLELIATIMTEEER TFSEO; RIRN ECUQHSU EDI VIINMA LEDENENSSTIIOGSN NFS.OR 060506-A Figure 34. 8-Lead Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) 0.50 0.40 3.00 0.60 MAX 0.30 PIN 1 BSC SQ INDICATOR 1 8 PIN 1 2.75 1.89 INDICATOR VTIOEWP BSC SQ 1R.E5F0 1.74 0.50 1.59 BSC 5 4 1.60 0.90 MAX 12° MAX 00..7650 TMYAPX 11..4350 0.85 NOM 0.05 MAX 0.01 NOM SEATING 0.30 0.20 REF PLANE 0.23 0.18 Figure 35. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD] 3 mm x 3 mm Body, Very Thin, Dual Lead (CP-8-2) Dimensions shown in millimeters Rev. D | Page 13 of 16

AD8661/AD8662/AD8664 3.20 3.00 2.80 8 5 5.15 3.20 4.90 3.00 4.65 2.80 1 4 PIN 1 0.65 BSC 0.95 0.85 1.10 MAX 0.75 0.80 0.15 0.38 0.23 8° 0.60 0.00 0.22 0.08 0° 0.40 COPLANARITY SEATING 0.10 PLANE COMPLIANT TO JEDEC STANDARDS MO-187-AA Figure 36. 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters 8.75 (0.3445) 8.55 (0.3366) 4.00 (0.1575) 14 8 6.20 (0.2441) 3.80 (0.1496) 1 7 5.80 (0.2283) 1.27 (0.0500) 0.50 (0.0197) BSC 45° 1.75 (0.0689) 0.25 (0.0098) 0.25 (0.0098) 1.35 (0.0531) 8° 0.10 (0.0039) 0° COPLANARITY SEATING 0.10 0.51 (0.0201) PLANE 0.25 (0.0098) 1.27 (0.0500) 0.31 (0.0122) 0.17 (0.0067) 0.40 (0.0157) COMPLIANTTO JEDEC STANDARDS MS-012-AB C(RINOEFNPEATRRREOENNLCLTEIHN EOGSN EDLSIYM)AEANNRDSEI AORRNOESU NANORDEET DAIN-PO MPFRIFLO LMPIIMRLELIATIMTEEER TFSEO; RIRN ECUQHSU EDI VIINMA LEDENENSSTIIOGSN NFS.OR 060606-A Figure 37. 14-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-14) Dimensions shown in millimeters and (inches) 5.10 5.00 4.90 14 8 4.50 4.40 6.40 BSC 4.30 1 7 PIN 1 1.05 0.65 1.00 BSC 0.20 0.80 1M.A20X 0.09 0.75 00..1055 00..3109 SPELAANTIENG COPLANARITY80°° 00..6405 0.10 COMPLIANT TO JEDEC STANDARDS MO-153-AB-1 Figure 38. 14-Lead Thin Shrink Small Outline Package [TSSOP] (RU-14) Dimensions shown in millimeters Rev. D | Page 14 of 16

AD8661/AD8662/AD8664 ORDERING GUIDE Model Temperature Range Package Description Package Option Branding AD8661ARZ1 −40°C to +125°C 8-Lead SOIC_N R-8 AD8661ARZ-REEL1 −40°C to +125°C 8-Lead SOIC_N R-8 AD8661ARZ-REEL71 −40°C to +125°C 8-Lead SOIC_N R-8 AD8661ACPZ-R21 −40°C to +85°C 8-Lead LFCSP_VD CP-8-2 A0M AD8661ACPZ-REEL1 −40°C to +85°C 8-Lead LFCSP_VD CP-8-2 A0M AD8661ACPZ-REEL71 −40°C to +85°C 8-Lead LFCSP_VD CP-8-2 A0M AD8662ARZ1 −40°C to +125°C 8-Lead SOIC_N R-8 AD8662ARZ-REEL1 −40°C to +125°C 8-Lead SOIC_N R-8 AD8662ARZ-REEL71 −40°C to +125°C 8-Lead SOIC_N R-8 AD8662ARMZ-R21 −40°C to +125°C 8-Lead MSOP RM-8 A10 AD8662ARMZ-REEL1 −40°C to +125°C 8-Lead MSOP RM-8 A10 AD8664ARZ1 −40°C to +125°C 14-Lead SOIC_N R-14 AD8664ARZ-REEL1 −40°C to +125°C 14-Lead SOIC_N R-14 AD8664ARZ-REEL71 −40°C to +125°C 14-Lead SOIC_N R-14 AD8664ARUZ1 −40°C to +125°C 14-Lead TSSOP RU-14 AD8664ARUZ-REEL1 −40°C to +125°C 14-Lead TSSOP RU-14 1 Z = Pb-free part. Rev. D | Page 15 of 16

AD8661/AD8662/AD8664 NOTES ©2006 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05200-0-7/06(D) Rev. D | Page 16 of 16

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: AD8661ARZ AD8662ARMZ AD8662ARZ AD8664ARUZ AD8664ARZ AD8661ACPZ-R2 AD8661ACPZ-REEL AD8661ACPZ-REEL7 AD8661ARZ-REEL AD8661ARZ-REEL7 AD8662ARMZ-REEL AD8662ARZ-REEL AD8662ARZ-REEL7 AD8664ARUZ-REEL AD8664ARZ-REEL AD8664ARZ-REEL7