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AD822BRZ-REEL7产品简介:
ICGOO电子元器件商城为您提供AD822BRZ-REEL7由Analog设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 AD822BRZ-REEL7价格参考。AnalogAD822BRZ-REEL7封装/规格:线性 - 放大器 - 仪表,运算放大器,缓冲器放大器, 通用 放大器 2 电路 满摆幅 8-SOIC。您可以下载AD822BRZ-REEL7参考资料、Datasheet数据手册功能说明书,资料中有AD822BRZ-REEL7 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
-3db带宽 | 1.9MHz |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC OPAMP GP 1.9MHZ RRO 8SOIC精密放大器 SGL-Supply RR Lo Pwr FET-Inpt Dual |
产品分类 | Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps集成电路 - IC |
品牌 | Analog Devices |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 放大器 IC,精密放大器,Analog Devices AD822BRZ-REEL7- |
数据手册 | |
产品型号 | AD822BRZ-REEL7 |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=30008http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26202 |
产品种类 | 精密放大器 |
供应商器件封装 | 8-SOIC N |
共模抑制比—最小值 | 80 dB |
关闭 | No |
其它名称 | AD822BRZ-REEL7CT |
包装 | 剪切带 (CT) |
压摆率 | 3 V/µs |
双重电源电压 | +/- 3 V, +/- 5 V, +/- 9 V, +/- 12 V |
商标 | Analog Devices |
增益带宽生成 | 1.8 MHz |
增益带宽积 | 1.9MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 8-SOIC(0.154",3.90mm 宽) |
封装/箱体 | SOIC-8 |
工作温度 | -45°C ~ 85°C |
工作电源电压 | 5 V to 30 V |
工厂包装数量 | 750 |
放大器类型 | 通用 |
最大双重电源电压 | +/- 15 V |
最大工作温度 | + 85 C |
最小双重电源电压 | +/- 2.5 V |
最小工作温度 | - 40 C |
标准包装 | 1 |
电压-电源,单/双 (±) | 3 V ~ 36 V, ±1.5 V ~ 18 V |
电压-输入失调 | 300µV |
电压增益dB | 120 dB |
电流-电源 | 1.4mA |
电流-输入偏置 | 2pA |
电流-输出/通道 | 20mA |
电源电压-最大 | 30 V |
电源电压-最小 | 5 V |
电源电流 | 1.24 mA |
电源类型 | Single, Dual |
电路数 | 2 |
系列 | AD822 |
视频文件 | http://www.digikey.cn/classic/video.aspx?PlayerID=1364138032001&width=640&height=505&videoID=2245193153001http://www.digikey.cn/classic/video.aspx?PlayerID=1364138032001&width=640&height=505&videoID=2245193159001 |
设计资源 | |
转换速度 | 3 V/us |
输入偏压电流—最大 | 10 pA |
输入电压范围—最大 | 30 V |
输入补偿电压 | 800 uV |
输出电流 | 15 mA |
输出类型 | Rail to Rail Output |
通道数量 | 2 Channel |
Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp AD822-EP FEATURES CONNECTION DIAGRAM True single-supply operation OUT1 1 8 V+ Input voltage range extends below ground Output swings rail-to-rail –IN1 2 7 OUT2 Single-supply capability from 5 V to 30 V +IN1 3 6 –IN2 HigDhu laola-sdu dprpivlye capability from ±2.5 V to ±15 V V– 4 AD822-EP 5 +IN2 09208-001 Capacitive load drive of 350 pF, G = +1 Figure 1. 8-Lead SOIC_N (R Suffix) Minimum output current of 15 mA GENERAL DESCRIPTION Excellent ac performance for low power The AD822-EP is a dual precision, low power FET input op 800 μA maximum quiescent current per amplifier amp that can operate from a single supply of 5 V to 30 V or dual Unity-gain bandwidth: 1.8 MHz supplies of ±2.5 V to ±15 V. It has true single-supply capability Slew rate of 3 V/μs with an input voltage range extending below the negative rail, Good dc performance allowing the AD822 to accommodate input signals below 800 μV maximum input offset voltage ground in the single-supply mode. Output voltage swing 2 μV/°C typical offset voltage drift extends to within 10 mV of each rail, providing the maximum 25 pA maximum input bias current output dynamic range. Low noise 13 nV/√Hz @ 10 kHz 100 No phase inversion ENHANCED PRODUCT FEATURES Hz) √ V/ Supports defense and aerospace applications (AQEC E (n standard) OIS Military temperature range (−55°C to +125°C) E N 10 G Controlled manufacturing baseline A T L One assembly/test site O V One fabrication site UT P Enhanced product change notification IN Qualification data available on request APhPoPtoLdICioAdTe IpOreNaSm ps 110 100FREQUENCY (Hz)1k 10k 09208-002 Figure 2. Input Voltage Noise vs. Frequency Active filters 12-bit to 14-bit data acquisition systems Offset voltage of 800 μV maximum, offset voltage drift of 2 μV/°C, Low power references and regulators input bias currents below 25 pA, and low input voltage noise provide dc precision with source impedances up to a gigaohm. The 1.8 MHz unity-gain bandwidth, –93 dB THD at 10 kHz, and 3 V/μs slew rate are provided with a low supply current of 800 μA per amplifier. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
AD822-EP TABLE OF CONTENTS Features..............................................................................................1 Absolute Maximum Ratings.........................................................10 Enhanced Product Features............................................................1 Thermal Resistance....................................................................10 Applications.......................................................................................1 ESD Caution................................................................................10 Connection Diagram.......................................................................1 Typical Performance Characteristics...........................................11 General Description.........................................................................1 Outline Dimensions.......................................................................18 Revision History...............................................................................2 Ordering Guide..........................................................................18 Specifications.....................................................................................4 REVISION HISTORY 6/10—Revision 0: Initial Version Rev. 0 | Page 2 of 20
AD822-EP The AD822-EP drives up to 350 pF of direct capacitive load as a follower and provides a minimum output current of 15 mA. 1V 1V 20µs This allows the amplifier to handle a wide range of load conditions. 100.... .... .... .... .... .... .... .... .... .... Its combination of ac and dc performance, plus the outstanding 5V 90 load drive capability, results in an exceptionally versatile amplifier . for the single-supply user. VOUT The AD822-EP operates over the military temperature range of −55°C to +125°C. 10 The AD822-EP is offered in an 8-lead SOIC_N package. 0%.... .... .... .... .... .... .... .... .... .... 0V (GND) FAuDll8 d2e2t adialsta a sbhoeuett ,t hwish iecnhh sahnocueldd p breo dcouncts ualrtee dav iani lcaobnleju innc tthioen 1V 09208-003 with this data sheet. Figure 3. Gain-of-2 Amplifier; VS = 5 V, 0 V, VIN = 2.5 V Sine Centered at 1.25 V, RL = 100 Ω Rev. 0 | Page 3 of 20
AD822-EP SPECIFICATIONS V = 0 V, 5 V @ T = 25°C, V = 0 V, V = 0.2 V, unless otherwise noted. S A CM OUT Table 1. T Grade Parameter Test Conditions/Comments Min Typ Max Unit DC PERFORMANCE Initial Offset 0.1 0.8 mV Maximum Offset Over Temperature 0.5 1.2 mV Offset Drift 2 μV/°C Input Bias Current V = 0 V to 4 V 2 25 pA CM At T 0.5 6 nA MAX Input Offset Current 2 20 pA At T 0.5 nA MAX Open-Loop Gain V = 0.2 V to 4 V OUT R = 100 kΩ 500 1000 V/mV L T to T 400 V/mV MIN MAX R = 10 kΩ 80 150 V/mV L T to T 80 V/mV MIN MAX R = 1 kΩ 15 30 V/mV L T to T 10 V/mV MIN MAX NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 0.1 Hz to 10 Hz 2 μV p-p f = 10 Hz 25 nV/√Hz f = 100 Hz 21 nV/√Hz f = 1 kHz 16 nV/√Hz f = 10 kHz 13 nV/√Hz Input Current Noise f = 0.1 Hz to 10 Hz 18 fA p-p f = 1 kHz 0.8 fA/√Hz Harmonic Distortion R = 10 kΩ to 2.5 V L f = 10 kHz V = 0.25 V to 4.75 V −93 dB OUT DYNAMIC PERFORMANCE Unity-Gain Frequency 1.8 MHz Full Power Response V p-p = 4.5 V 210 kHz OUT Slew Rate 3 V/μs Settling Time To 0.1% V = 0.2 V to 4.5 V 1.4 μs OUT To 0.01% V = 0.2 V to 4.5 V 1.8 μs OUT MATCHING CHARACTERISTICS Initial Offset 1.0 mV Maximum Offset Over Temperature 1.6 mV Offset Drift 3 μV/°C Input Bias Current 20 pA Crosstalk @ f = 1 kHz R = 5 kΩ −130 dB L Crosstalk @ f = 100 kHz R = 5 kΩ −93 dB L Rev. 0 | Page 4 of 20
AD822-EP T Grade Parameter Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Input Voltage Range1, T to T −0.2 +4 V MIN MAX Common-Mode Rejection Ratio (CMRR) V = 0 V to 2 V 66 80 dB CM T to T V = 0 V to 2 V 66 dB MIN MAX CM Input Impedance Differential 1013||0.5 Ω||pF Common Mode 1013||2.8 Ω||pF OUTPUT CHARACTERISTICS Output Saturation Voltage2 V − V I = 20 μA 5 7 mV OL EE SINK T to T 10 mV MIN MAX V − V I = 20 μA 10 14 mV CC OH SOURCE T to T 20 mV MIN MAX V − V I = 2 mA 40 55 mV OL EE SINK T to T 80 mV MIN MAX V − V I = 2 mA 80 110 mV CC OH SOURCE T to T 160 mV MIN MAX V – V I = 15 mA 300 500 mV OL EE SINK T to T 1000 mV MIN MAX V − V I = 15 mA 800 1500 mV CC OH SOURCE T to T 1900 mV MIN MAX Operating Output Current 15 mA T to T 12 mA MIN MAX Capacitive Load Drive 350 pF POWER SUPPLY Quiescent Current, T to T 1.24 1.6 mA MIN MAX Power Supply Rejection V+ = 5 V to 15 V 66 80 dB T to T 66 dB MIN MAX 1 This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (V+ − 1 V) to V+. Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 V below the positive supply. 2 VOL − VEE is defined as the difference between the lowest possible output voltage (VOL) and the negative voltage supply rail (VEE). VCC − VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC). Rev. 0 | Page 5 of 20
AD822-EP V = ±5 V @ T = 25°C, V = 0 V, V = 0 V, unless otherwise noted. S A CM OUT Table 2. T Grade Parameter Test Conditions/Comments Min Typ Max Unit DC PERFORMANCE Initial Offset 0.1 0.8 mV Maximum Offset Over Temperature 0.5 1.5 mV Offset Drift 2 μV/°C Input Bias Current V = −5 V to +4 V 2 25 pA CM At T 0.5 6 nA MAX Input Offset Current 2 20 pA At T 0.5 nA MAX Open-Loop Gain V = −4 V to +4 V OUT R = 100 kΩ 400 1000 V/mV L T to T 400 V/mV MIN MAX R = 10 kΩ 80 150 V/mV L T to T 80 V/mV MIN MAX R = 1 kΩ 20 30 V/mV L T to T 10 V/mV MIN MAX NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 0.1 Hz to 10 Hz 2 μV p-p f = 10 Hz 25 nV/√Hz f = 100 Hz 21 nV/√Hz f = 1 kHz 16 nV/√Hz f = 10 kHz 13 nV/√Hz Input Current Noise f = 0.1 Hz to 10 Hz 18 fA p-p f = 1 kHz 0.8 fA/√Hz Harmonic Distortion R = 10 kΩ L f = 10 kHz V = ±4.5 V −93 dB OUT DYNAMIC PERFORMANCE Unity-Gain Frequency 1.9 MHz Full Power Response V p-p = 9 V 105 kHz OUT Slew Rate 3 V/μs Settling Time to 0.1% V = 0 V to ±4.5 V 1.4 μs OUT to 0.01% V = 0 V to ±4.5 V 1.8 μs OUT MATCHING CHARACTERISTICS Initial Offset 1.0 mV Maximum Offset Over Temperature 3 mV Offset Drift 3 μV/°C Input Bias Current 25 pA Crosstalk @ f = 1 kHz R = 5 kΩ −130 dB L Crosstalk @ f = 100 kHz R = 5 kΩ −93 dB L INPUT CHARACTERISTICS Input Voltage Range1, T to T −5.2 +4 V MIN MAX Common-Mode Rejection Ratio (CMRR) V = −5 V to +2 V 66 80 dB CM T to T V = −5 V to +2 V 66 dB MIN MAX CM Input Impedance Differential 1013||0.5 Ω||pF Common Mode 1013||2.8 Ω||pF Rev. 0 | Page 6 of 20
AD822-EP T Grade Parameter Test Conditions/Comments Min Typ Max Unit OUTPUT CHARACTERISTICS Output Saturation Voltage2 V − V I = 20 μA 5 7 mV OL EE SINK T to T 10 mV MIN MAX V − V I = 20 μA 10 14 mV CC OH SOURCE T to T 20 mV MIN MAX V − V I = 2 mA 40 55 mV OL EE SINK T to T 80 mV MIN MAX V − V I = 2 mA 80 110 mV CC OH SOURCE T to T 160 mV MIN MAX V − V I = 15 mA 300 500 mV OL EE SINK T to T 1000 mV MIN MAX V − V I = 15 mA 800 1500 mV CC OH SOURCE T to T 1900 mV MIN MAX Operating Output Current 15 mA T to T 12 mA MIN MAX Capacitive Load Drive 350 pF POWER SUPPLY Quiescent Current, T to T 1.3 1.6 mA MIN MAX Power Supply Rejection V = ±5 V to ±15 V 66 80 dB SY T to T 66 dB MIN MAX 1 This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (V+ − 1 V) to V+. Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 V below the positive supply. 2 VOL − VEE is defined as the difference between the lowest possible output voltage (VOL) and the negative voltage supply rail (VEE). VCC − VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC). Rev. 0 | Page 7 of 20
AD822-EP V = ±15 V @ T = 25°C, V = 0 V, V = 0 V, unless otherwise noted. S A CM OUT Table 3. T Grade Parameter Test Conditions/Comments Min Typ Max Unit DC PERFORMANCE Initial Offset 0.4 2 mV Maximum Offset Over Temperature 0.5 3 mV Offset Drift 2 μV/°C Input Bias Current V = 0 V 2 25 pA CM V = −10 V 40 pA CM At T V = 0 V 0.5 6 nA MAX CM Input Offset Current 2 20 pA At T 0.5 nA MAX Open-Loop Gain V = −10 V to +10 V OUT R = 100 kΩ 500 2000 V/mV L T to T 500 V/mV MIN MAX R = 10 kΩ 100 500 V/mV L T to T 100 V/mV MIN MAX R = 1 kΩ 30 45 V/mV L T to T 20 V/mV MIN MAX NOISE/HARMONIC PERFORMANCE Input Voltage Noise f = 0.1 Hz to 10 Hz 2 μV p-p f = 10 Hz 25 nV/√Hz f = 100 Hz 21 nV/√Hz f = 1 kHz 16 nV/√Hz f = 10 kHz 13 nV/√Hz Input Current Noise f = 0.1 Hz to 10 Hz 18 fA p-p f = 1 kHz 0.8 fA/√Hz Harmonic Distortion R = 10 kΩ L f = 10 kHz V = ±10 V −85 dB OUT DYNAMIC PERFORMANCE Unity-Gain Frequency 1.9 MHz Full Power Response V p-p = 20 V 45 kHz OUT Slew Rate 3 V/μs Settling Time to 0.1% V = 0 V to ±10 V 4.1 μs OUT to 0.01% V = 0 V to ±10 V 4.5 μs OUT MATCHING CHARACTERISTICS Initial Offset 3 mV Maximum Offset Over Temperature 4 mV Offset Drift 3 μV/°C Input Bias Current 25 pA Crosstalk @ f = 1 kHz R = 5 kΩ −130 dB L Crosstalk @ f = 100 kHz R = 5 kΩ −93 dB L INPUT CHARACTERISTICS Input Voltage Range1, T to T −15.2 +14 V MIN MAX Common-Mode Rejection Ratio (CMRR) V = −15 V to +12 V 70 80 dB CM T to T V = −15 V to +12 V 70 dB MIN MAX CM Input Impedance Differential 1013||0.5 Ω||pF Common Mode 1013||2.8 Ω||pF Rev. 0 | Page 8 of 20
AD822-EP T Grade Parameter Test Conditions/Comments Min Typ Max Unit OUTPUT CHARACTERISTICS Output Saturation Voltage2 V − V I = 20 μA 5 7 mV OL EE SINK T to T 10 mV MIN MAX V − V I = 20 μA 10 14 mV CC OH SOURCE T to T 20 mV MIN MAX V − V I = 2 mA 40 55 mV OL EE SINK T to T 80 mV MIN MAX V − V I = 2 mA 80 110 mV CC OH SOURCE T to T 160 mV MIN MAX V − V I = 15 mA 300 500 mV OL EE SINK T to T 1000 mV MIN MAX V − V I = 15 mA 800 1500 mV CC OH SOURCE T to T 1900 mV MIN MAX Operating Output Current 20 mA T to T 15 mA MIN MAX Capacitive Load Drive 350 pF POWER SUPPLY Quiescent Current, T to T 1.4 1.8 mA MIN MAX Power Supply Rejection V = ±5 V to ±15 V 70 80 dB SY T to T 70 dB MIN MAX 1 This is a functional specification. Amplifier bandwidth decreases when the input common-mode voltage is driven in the range (V+ − 1 V) to V+. Common-mode error voltage is typically less than 5 mV with the common-mode voltage set at 1 V below the positive supply. 2 VOL − VEE is defined as the difference between the lowest possible output voltage (VOL) and the negative voltage supply rail (VEE). VCC − VOH is defined as the difference between the highest possible output voltage (VOH) and the positive supply voltage (VCC). Rev. 0 | Page 9 of 20
AD822-EP ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 4. θ is specified for the worst-case conditions, that is, a device Parameter Rating JA soldered in a circuit board for surface-mount packages. Supply Voltage ±18 V Internal Power Dissipation Table 5. Thermal Resistance 8-Lead SOIC_N (R) Observe Maximum Package Type θ θ Unit JA JC Junction Temperature 8-lead SOIC_N (R) 160 43 °C/W Input Voltage ((V+) + 0.2 V) to ((V−) − 20 V) Output Short-Circuit Duration Indefinite ESD CAUTION Differential Input Voltage ±30 V Storage Temperature Range (R) –65°C to +150°C Operating Temperature Range −55°C to +125°C Maximum Junction Temperature 150°C Lead Temperature 260°C (Soldering, 60 sec) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. 0 | Page 10 of 20
AD822-EP TYPICAL PERFORMANCE CHARACTERISTICS 70 5 VS = 0V, 5V 60 A) 50 p NITS ENT ( U40 R F R BER O30 AS CU 0 NUM20 PUT BI VS = ±5V VS = 0V, +5VAND ±5V N I 10 –00.5 –0.4 –0.3 –0.2OFF–0S.E1T VO0LTAG0E.1 (mV0).2 0.3 0.4 0.5 09208-004 –5–5 –4 –3 C–O2MMO–N1-MOD0E VOL1TAGE2 (V) 3 4 5 09208-007 Figure 4. Typical Distribution of Offset Voltage (390 Units) Figure 7. Input Bias Current vs. Common-Mode Voltage; VS = 5 V, 0 V, and VS = ±5 V 16 1k 14 VS = ±5V VS = ±15V 12 A)100 p T ( 10 EN N R N BI 8 CUR 10 % I AS 6 BI T U P 4 IN 1 2 0–12 –10 –8 –O6FFS–E4T VO–L2TAGE0 DRIF2T (µV4/°C) 6 8 10 09208-005 0.1–16 –12 –8COMM–O4N-MOD0E VOLT4AGE (V)8 12 16 09208-008 Figure 5. Typical Distribution of Offset Voltage Drift (100 Units) Figure 8. Input Bias Current vs. Common-Mode Voltage; VS = ±15 V 50 100k 45 10k 40 A) NITS 3350 ENT (p 1k U R MBER OF 2250 BIAS CUR 100 U T 10 N 15 PU N I 10 1 5 00 1 2 I3NPUT 4BIAS C5URRE6NT (p7A) 8 9 10 09208-006 0.120 40 60TEMPER8A0TURE (°C1)00 120 140 09208-009 Figure 6. Typical Distribution of Input Bias Current (213 Units) Figure 9. Input Bias Current vs. Temperature; VS = 5 V, VCM = 0 V Rev. 0 | Page 11 of 20
AD822-EP 10M 40 POS RAIL V/V) 1M VS = ±15V E (µV) 20 RL = 20kΩ RL = 2kΩ N ( AG GAI VS = 0V, +5V OLT POS RAIL NEG RAIL OP R V 0 O O EN-L100k VS = 0V, +3V ERR RPAOISL OP UT NP–20 NEG RAIL I RL = 100kΩ 10k100 1LkOAD RESISTANCE 1(Ω0k) 100k 09208-010 –400 OUT60PUT VOLTA1G20E FROM SU18P0PLY RAILS2 4(0mNVE)G RAIL300 09208-013 Figure 10. Open-Loop Gain vs. Load Resistance Figure 13. Input Error Voltage with Output Voltage Within 300 mV of Either Supply Rail for Various Resistive Loads; VS = ±5 V 10M 1k RL = 100kΩ VS = ±15V Hz) N (V/V) 1M VS = 0V, +5V E (nV/√100 OP GAI RL = 10kΩ VS = ±15V E NOIS LO VS = 0V, +5V AG OPEN- 100k VS = ±15V T VOLT 10 RL = 600Ω PU N I VS = 0V, +5V 10k–60 –40 –20 0 TE2M0PER4A0TURE6 0(°C)80 100 120 140 09208-011 11 10 FREQU1E0N0CY (Hz) 1k 10k 09208-014 Figure 11. Open-Loop Gain vs. Temperature Figure 14. Input Voltage Noise vs. Frequency 300 –40 RL = 10kΩ –50 ACL = –1 200 V) E ( –60 AG 100 RL = 10kΩ OLT RL = 100kΩ B) –70 VS = 0V, +3V; VOUT = 2.5V p-p V d ROR 0 THD ( –80 ER VS = ±15V; VOUT = 20V p-p T –100 INPU RL = 600Ω –90 VS = ±5V; VOUT = 9V p-p –200 –100 VS = 0V, +5V; VOUT = 4.5V p-p –300–16 –12 –8 OU–T4PUT VO0LTAGE4 (V) 8 12 16 09208-012 –110100 1kFREQUENCY (Hz)10k 100k 09208-015 Figure 12. Input Error Voltage vs. Output Voltage for Resistive Loads Figure 15. Total Harmonic Distortion (THD) vs. Frequency Rev. 0 | Page 12 of 20
AD822-EP 100 100 90 80 80 80 P GAIN (dB) 6400 GAIN PHASE 6400GIN (Degrees) EJECTION (dB) 657000 VS = 0V, +3VVS = ±15V VS = 0V, +5V O R R OPEN-LO 20 20HASE MA N-MODE 4300 P O M 0 0 M 20 O –2010RCLL == 21k0Ω01p0F0 1kFREQU1E0NkCY (Hz1)00k 1M 10M–20 09208-016 C 1 0010 100 1kFREQU1E0NkCY (Hz1)00k 1M 10M 09208-019 Figure 16. Open-Loop Gain and Phase Margin vs. Frequency Figure 19. Common-Mode Rejection vs. Frequency 1k 5 ACL = +1 VS = ±15V V) m 100 E ( 4 NREAGILATIVE PROAISLITIVE Ω) AG E ( LT C O AN 10 R V 3 UT IMPED 1 DE ERRO 2 +25°C P O OUT 0.1 MON-M 1 –55°C +125°C M O –55°C C +125°C 0.01100 1k F1R0kEQUENCY1 0(H0kz) 1M 10M 09208-017 0–1 COMMON-M0ODE VOLTAGE1 FROM SUPPL2Y RAILS (V) 3 09208-020 Figure 17. Output Impedance vs. Frequency Figure 20. Absolute Common-Mode Error vs. Common-Mode Voltage from Supply Rails (VS − VCM) 16 1000 S 12 V) T m O ±VOL 8 1% TAGE ( 100 G FROM 0T 40 0.1% 00..0011%% ERROR RATION VOL VS – VOH WIN –4 ATU 10 VOL – VS S S PUT –8 1% PUT T T U U O O –12 –160 1 SET2TLING TIME3 (µs) 4 5 09208-018 00.001 0.01 LOA0D.1 CURRENT 1(mA) 10 100 09208-021 Figure 18. Output Swing and Error vs. Settling Time Figure 21. Output Saturation Voltage vs. Load Current Rev. 0 | Page 13 of 20
AD822-EP 1000 100 mV) ISOURCE = 10mA B) 9800 SATURATION VOLTAGE (10100 IIIISSSSIIOONNUUKKRR ==CC EE11 m0==m A11Am0µAA R SUPPLY REJECTION (d 6375400000 –P+SPRSRRR UTPUT ISINK = 10µA POWE 20 O 10 1–60 –40 –20 0 TE2M0PER4A0TURE6 0(°C)80 100 120 140 09208-022 010 100 1kFREQU1E0NkCY (Hz1)00k 1M 10M 09208-025 Figure 22. Output Saturation Voltage vs. Temperature Figure 25. Power Supply Rejection vs. Frequency 80 30 mA) 70 VS = ±15V 25 RL = 2kΩ NT LIMIT ( 6500 –OUT GE (V) 20 VS = ±15V RCUIT CURRE 4300 VS = 0V, +5VVS = 0VV,S +=3 V±15V +– UTPUT VOLTA 1150 T-CI 20 – O SHOR 10 VS = 0V, +5V VS = 0V, +3V ++ 5 VS = 0V, +5V VS = 0V, +3V 0–60 –40 –20 0 TE2M0PER4A0TURE6 0(°C)80 100 120 140 09208-023 010k 100kFREQUENCY (Hz)1M 10M 09208-026 Figure 23. Short-Circuit Current Limit vs. Temperature Figure 26. Large Signal Frequency Response 1600 T = +125°C 1400 T = +25°C A)1200 T (µ T = –55°C EN1000 R R U C 800 T N CE 600 S E QUI 400 200 00 4 8 TO1T2ALSU1P6PLYV2O0LTAG2E4(V) 28 32 36 09208-024 Figure 24. Quiescent Current vs. Supply Voltage vs. Temperature Rev. 0 | Page 14 of 20
AD822-EP –70 5V 5µs –80 100 90 –90 B) d K (–100 L A T S S–110 O R C –120 10 0% ––114300300 1k 3k FR1E0QkUENC3Y0 (kHz) 100k 300k 1M 09208-028 Figure 31. Large Signal Response Unity-Gain Follower; VS = ±15 V, R09208-032L = 10 kΩ Figure 27. Crosstalk vs. Frequency 10mV 500ns V+ 0.01µF 100 8 90 + 1/2 VIN A–D822-EP RL 100pF VOUT 0.01µF 4 09208-029 10 Figure 28. Unity-Gain Follower 0% 09208-033 5V 10µs Figure 32. Small Signal Response Unity-Gain Follower; VS = ±15 V, RL = 10 kΩ 100 90 1V 2µs 100 90 10 0% 09208-030 GND 01%0 Figure 29. 20 V p-p, 25 kHz Sine Wave Input; Unity-Gain Follower; VS = ±15 V, RL = 600 Ω 09208-034 VOUT Figure 33. VS = 5 V, 0 V; Unity-Gain Follower Response to 0 V to 4 V Step V+ 20kΩ 2.2kΩ V+ 0.01µF 0.1µF 1µF 2 8 6 8 – – 1/2 1 7 1/2 VIN + 1/2 20V p-p AD822-EP AD822-EP 3 + 5kΩ 5kΩ + 5 A–D822-EP RL 100pF VOUT VIN CROSSTALK = 20 log1V0OVUINT V– 0.1µF 1µF 09208-031 4 Figure 34. Unity-Gain Follower 09208-035 Figure 30. Crosstalk Test Circuit Rev. 0 | Page 15 of 20
AD822-EP 10kΩ 20kΩ VIN V+ VOUT 10mV 2µs 0.01µF 8 100 90 – 1/2 AD822-EP + RL 100pF 4 09208-036 Figure 35. Gain-of-Two Inverter 10 GND 0% 09208-039 1V 2µs Figure 38. VS = 5 V, 0 V; Gain-of-2 Inverter Response to 20 mV Step, Centered 20 mV Below Ground, RL = 10 kΩ 100 90 1V 2µs 100 10 GND 0% 09208-037 10 Figure 36. VS = 5 V, 0 V; Unity-Gain Follower Response to 0 V to 5 V Step GND 09208-040 10mV 2µs Figure 39. VS = 5 V, 0 V; Gain-of-2 Inverter Response to 2.5 V Step, Centered −1.25 V Below Ground, RL = 10 kΩ 100 90 500mV 10µs 100 90 10 GND 0% 09208-038 10 Figure 37. VS = 5 V, 0 V; Unity-Gain Follower Response to 40 mV Step, GND 0% Centered 40 mV above Ground, RL = 10 kΩ 09208-041 Figure 40. VS = 3 V, 0 V; Gain-of-2 Inverter, VIN = 1.25 V, 25 kHz, Sine Wave Centered at −0.75 V, RL = 600 Ω Rev. 0 | Page 16 of 20
AD822-EP 1V 10µs 100.... .... .... .... .... .... .... .... .... .... 90 10 .... .... .... .... .... .... .... .... .... .... GND 0% 1V (a) 1V 1V 10µs +Vs 100.... .... .... .... ... ... .... .... .... .... 90 10 GND 0%.... .... .... .... .... .... .... .... .... .... 1V (b) 5V RP VIN VOUT 09208-042 Figure 41. (a) Response with RP = 0; VIN from 0 V to +VS (b) VIN = 0 V to +VS + 200 mV VOUT = 0 V to +VS RP = 49.9 kΩ Rev. 0 | Page 17 of 20
AD822-EP OUTLINE DIMENSIONS 5.00(0.1968) 4.80(0.1890) 8 5 4.00(0.1574) 6.20(0.2441) 3.80(0.1497) 1 4 5.80(0.2284) 1.27(0.0500) 0.50(0.0196) BSC 1.75(0.0688) 0.25(0.0099) 45° 0.25(0.0098) 1.35(0.0532) 8° 0.10(0.0040) 0° COPLANARITY 0.51(0.0201) 0.10 SEATING 0.31(0.0122) 0.25(0.0098) 10..2470((00..00510507)) PLANE 0.17(0.0067) COMPLIANTTOJEDECSTANDARDSMS-012-AA C(RINOEFNPEATRRREOENNLCLTEIHNEOGSNDELISYM)AEANNRDSEIAORRNOESUNANORDETEDAIN-POMPFRIFLOLMPIMIRLELIATIMTEEERTFSEO;RIRNECUQHSUEDIVIINMAELDENENSSTIIOGSNNFS.OR 012407-A Figure 42. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model1 Temperature Range Package Description Package Option AD822TRZ-EP −55°C to +125°C 8-Lead SOIC_N R-8 AD822TRZ-EP-R7 −55°C to +125°C 8-Lead SOIC_N R-8 1 Z = RoHS Compliant Part. SPICE model is available at www.analog.com. Rev. 0 | Page 18 of 20
AD822-EP NOTES Rev. 0 | Page 19 of 20
AD822-EP NOTES ©2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D09208-0-6/10(0) Rev. 0 | Page 20 of 20
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