80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity http://onsemi.com protection diodes. SCHOTTKY BARRIER Features • RECTIFIER High Current Capability • 8.0 AMPERES Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard−Ring for Stress Protection • Low Forward Voltage • High Surge Capacity • These are Pb−Free Devices* AXIAL LEAD CASE 267−05 (DO−201AD) Mechanical Characteristics: • STYLE 1 Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: MARKING DIAGRAM 220°C Max. for 10 Seconds, 1/16″ from Case • Polarity: Cathode indicated by Polarity Band • ESD Protection: Human Body Model > 4000 V (Class 3) 80SQ Machine Model > 400 V (Class C) 045N YYWW(cid:2) (cid:2) MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage VRRM 45 V YY = Year Working Peak Reverse Voltage VRWM WW = Work Week DC Blocking Voltage VR (cid:2) = Pb−Free Package (Note: Microdot may be in either location) Average Rectified Forward Current TL = 75°C IO 8.0 A (PsiJL = 12°C/W, P.C. Board Mounting, Note 2) ORDERING INFORMATION Non−Repetitive Peak Surge Current IFSM 140 A (Surge Applied at Rated Load Conditions Device Package Shipping† Halfwave, Single Phase, 60 Hz) 80SQ045N Axial Lead* 500 Units/Box Operating and Storage Junction Tempera- TJ, Tstg −65 to +125 °C ture Range (Reverse Voltage Applied) 80SQ045NG Axial Lead* 500 Units/Box Voltage Rate of Change (Rated VR) dv/dt 10 V/ns 80SQ045NRL Axial Lead* 1500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum 80SQ045NRLG Axial Lead* 1500/Tape & Reel Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the †For information on tape and reel specifications, Recommended Operating Conditions may affect device reliability. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: May, 2006 − Rev. 3 80SQ045N/D

80SQ045N THERMAL CHARACTERISTICS 0.9 in x 0.9 in 6.75 in x 6.75 in Characteristic Symbol Copper Pad Size Copper Pad Size Unit Thermal Resistance, Junction−to−Lead (See Note 2 − Mounting Data) R(cid:2)JL 13 12 °C/W Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data) R(cid:2)JA 50 40 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 8.0 A, TL = 25°C) 0.55 Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) iR mA TL = 25°C 1.0 TL = 100°C 50 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle =2.0%. 30 30 D D R 10 R 10 A A W W ORS) ORS) S FAMP S FAMP OUT ( 100°C OUT ( MBR845 EN EN NE 1 NE 1 TARR 125°C 75°C TARR 100°C NU NU TAC TAC 75°C NS NS 125°C I, IF 25°C I, IF 25°C 0.1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage S) P M1E−01 10,000 A NT ( 125°C E RR1E−02 100°C F) U p SE C1E−03 75°C NCE ( fT =J =1 2M5H°Cz R A E T1000 EV CI R1E−04 PA S A U 25°C C EO1E−05 C, N A T N A1E−06 100 T S 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 N , IR VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) I Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2

80SQ045N 75 9 70 8 D dc sq in) 6605 RWARMPS) 67 R(cid:2)JL = 12°C/W PER AREA ( 455505 See Note 2 VERAGE FOURRENT (A 345 SQWUAAVREE P AC CO 40 , F 2 I 35 1 30 0 0 2 4 6 8 10 0 20 40 60 80 100 120 140 R(cid:2)JA (°C/W) TL, LEAD TEMPERATURE (°C) Figure 5. R(cid:2)JA versus Copper Area Figure 6. Current Derating − Lead 4.5 NOTE 2 — MOUNTING DATA 4 ERS) 3.5 Mounting Method WT SQUARE GE PON (WAT 2.53 WAVE TJ = 125°C P.C. Bcooaprpde wr isthu r6fa.7c5e .sq. in. AO dc ÉÉ RTI 2 , AVEOSSIPA 1.5 ÉÉÉÉ L = 3/8(cid:2) PFDI 1 ÉÉ 0.5 ÉÉ 0 0 2 4 6 8 10 ÉÉ IO, AVERAGE FORWARD CURRENT (AMPS) ÉÉ Board Ground Plane Figure 7. Forward Power Dissipation ÉÉ 1 T N D = 0.5 E SI N 0.2 A TRCE 0.1 VE AN 0.1 0.05 TIST ECSI P FE (pk) FR 0.01 D EAL 0.01 Copper Area = 0.271 sq. in. EM MALIZTHER SINGLE PULSE R(cid:2)JA = 61.8 °C/W t1 t2 R DUTY CYCLE, D = t1/t2 O 0.001 N r(t), 0.0001 0.001 0.01 t, 0T.I1ME (sec) 1.0 10 100 1000 Figure 8. Thermal Response, Junction−to−Ambient http://onsemi.com 3

80SQ045N PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. K A 2.CONTROLLING DIMENSION: INCH. D 1 2 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.287 0.374 7.30 9.50 B 0.189 0.209 4.80 5.30 D 0.047 0.051 1.20 1.30 B K 1.000 −−− 25.40 −−− K STYLE 1: PIN 1.CATHODE (POLARITY BAND) 2.ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com 80SQ045N/D 4

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