ICGOO在线商城 > 集成电路(IC) > 逻辑 - 栅极和逆变器 > 74V1G08CTR
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74V1G08CTR产品简介:
ICGOO电子元器件商城为您提供74V1G08CTR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 74V1G08CTR价格参考¥0.04-¥0.04。STMicroelectronics74V1G08CTR封装/规格:逻辑 - 栅极和逆变器, 与门 IC 1 Channel SOT-323-5。您可以下载74V1G08CTR参考资料、Datasheet数据手册功能说明书,资料中有74V1G08CTR 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC GATE AND 1CH 2-INP SOT-323逻辑门 Single 2-Input AND |
产品分类 | |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 逻辑集成电路,逻辑门,STMicroelectronics 74V1G08CTR74V |
数据手册 | |
产品型号 | 74V1G08CTR |
不同V、最大CL时的最大传播延迟 | 7ns @ 5V,50pF |
产品 | AND |
产品目录页面 | |
产品种类 | 逻辑门 |
传播延迟时间 | 8.5 ns |
低电平输出电流 | 8 mA |
供应商器件封装 | * |
其它名称 | 497-4520-1 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM140/SC1800/PF62534?referrer=70071840 |
包装 | 剪切带 (CT) |
商标 | STMicroelectronics |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | 6-TSSOP(5 引线),SC-88A,SOT-353 |
封装/箱体 | SOT-323 |
工作温度 | -55°C ~ 125°C |
工具箱 | /product-detail/zh/Q2319745/497-8001-KIT-ND/811048 |
工厂包装数量 | 3000 |
最大工作温度 | + 125 C |
最小工作温度 | - 55 C |
栅极数量 | 1 Gate |
标准包装 | 1 |
特性 | - |
电压-电源 | 2 V ~ 5.5 V |
电流-输出高,低 | 8mA,8mA |
电流-静态(最大值) | 1µA |
电源电压-最大 | 5.5 V |
电源电压-最小 | 2 V |
电路数 | 1 |
系列 | 74V1G08 |
输入/输出线数量 | 2 / 1 |
输入数 | 2 |
输入线路数量 | 2 |
输出线路数量 | 1 |
逻辑电平-低 | 0.5V |
逻辑电平-高 | 1.5V |
逻辑类型 | 与门 |
逻辑系列 | 74V |
高电平输出电流 | - 8 mA |
74V1G08 SINGLE 2-INPUT AND GATE (cid:1) HIGHSPEED:tPD=3.8ns(TYP.)atVCC=5V (cid:1) LOWPOWERDISSIPATION: I =1µA(MAX.)atT =25°C CC A (cid:1) HIGHNOISEIMMUNITY: V =V =28% V (MIN.) NIH NIL CC (cid:1) POWERDOWNPROTECTIONONINPUTS (cid:1) SYMMETRICALOUTPUTIMPEDANCE: SOT23-5L SOT323-5L |I |=I =8mA (MIN)atV =4.5V OH OL CC (cid:1) BALANCEDPROPAGATIONDELAYS: t ≅t ORDERCODES PLH PHL (cid:1) OPERATINGVOLTAGERANGE: PACKAGE T&R V (OPR)=2Vto5.5V CC SOT23-5L 74V1G08STR (cid:1) IMPROVEDLATCH-UPIMMUNITY SOT323-5L 74V1G08CTR DESCRIPTION The 74V1G08 is an advanced high-speed CMOS Power down protection is provided on all inputs SINGLE 2-INPUT AND GATE fabricated with and 0 to 7V can be accepted on inputs with no sub-micron silicon gate and double-layer metal regard to the supply voltage. This device can be wiringC2MOS technology. usedtointerface5Vto3V. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunityandstableoutput. PINCONNECTIONANDIECLOGICSYMBOLS April2004 1/9
74V1G08 INPUTEQUIVALENTCIRCUIT PINDESCRIPTION PINN° SYMBOL NAMEANDFUNCTION 1 1A DataInput 2 1B DataInput 4 1Y DataOutput 3 GND Ground(0V) 5 VCC PositiveSupplyVoltage TRUTHTABLE A B Y L L L L H L H L L H H H ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit VCC SupplyVoltage -0.5to+7.0 V VI DCInputVoltage -0.5to+7.0 V VO DCOutputVoltage -0.5toVCC+0.5 V IIK DCInputDiodeCurrent -20 mA IOK DCOutputDiodeCurrent ±20 mA IO DCOutputCurrent ±25 mA ICCorIGND DCVCCorGroundCurrent ±50 mA Tstg StorageTemperature -65to+150 °C TL LeadTemperature(10sec) 260 °C AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur.Functionaloperationundertheseconditionsis notimplied. RECOMMENDEDOPERATINGCONDITIONS Symbol Parameter Value Unit VCC SupplyVoltage 2to5.5 V VI InputVoltage 0to5.5 V VO OutputVoltage 0toVCC V Top OperatingTemperature -55to125 °C dt/dv InputRiseandFallTime(note1)(VCC=3.3±0.3V) 0to100 ns/V (V =5.0±0.5V) 0to20 ns/V CC 1)V from30%to70%ofV IN CC 2/9
74V1G08 DCSPECIFICATIONS TestCondition Value Symbol Parameter V TA=25°C -40to85°C -55to125°C Unit CC (V) Min. Typ. Max. Min. Max. Min. Max. V HighLevelInput 2.0 1.5 1.5 1.5 IH Voltage 3.0to V 0.7V 0.7V 0.7V 5.5 CC CC CC V LowLevelInput 2.0 0.5 0.5 0.5 IL Voltage 3.0to V 0.3V 0.3V 0.3V 5.5 CC CC CC VOH HighLevelOutput 2.0 IO=-50µA 1.9 2.0 1.9 1.9 Voltage 3.0 IO=-50µA 2.9 3.0 2.9 2.9 4.5 IO=-50µA 4.4 4.5 4.4 4.4 V 3.0 IO=-4mA 2.58 2.48 2.4 4.5 IO=-8mA 3.94 3.8 3.7 VOL LowLevelOutput 2.0 IO=50µA 0.0 0.1 0.1 0.1 Voltage 3.0 IO=50µA 0.0 0.1 0.1 0.1 4.5 IO=50µA 0.0 0.1 0.1 0.1 V 3.0 IO=4mA 0.36 0.44 0.55 4.5 IO=8mA 0.36 0.44 0.55 I InputLeakage 0to I Current 5.5 VI=5.5VorGND ±0.1 ±1 ±1 µA I QuiescentSupply CC Current 5.5 VI=VCCorGND 1 10 20 µA ACELECTRICALCHARACTERISTICS(Inputt =t =3ns) r f TestCondition Value Symbol Parameter V C TA=25°C -40to85°C -55to125°C Unit CC L (V) (pF) Min. Typ. Max. Min. Max. Min. Max. tPLHtPHL PropagationDelay 3.3(*) 15 5.2 7.5 1.0 9.0 1.0 10.0 Time 3.3(*) 50 5.8 8.5 1.0 10.0 1.0 11.0 ns 5.0(**) 15 3.8 5.9 1.0 7.0 1.0 8.0 5.0(**) 50 4.6 7.0 1.0 8.0 1.0 9.0 (*)Voltagerangeis3.3V±0.3V (**)Voltagerangeis5.0V±0.5V CAPACITIVECHARACTERISTICS TestCondition Value Symbol Parameter TA=25°C -40to85°C -55to125°C Unit Min. Typ. Max. Min. Max. Min. Max. CIN InputCapacitance 4 10 10 10 pF C PowerDissipation PD Capacitance 10 pF (note1) 1)C isdefinedasthevalueoftheIC’sinternalequivalentcapacitancewhichiscalculatedfromtheoperatingcurrentconsumptionwithout PD load.(RefertoTestCircuit).Averageoperatingcurrentcanbeobtainedbythefollowingequation.I =C xV xf +I CC(opr) PD CC IN CC 3/9
74V1G08 TESTCIRCUIT C =15/50pForequivalent(includesjigandprobecapacitance) L R =Z ofpulsegenerator(typically50Ω) T OUT WAVEFORM:PROPAGATIONDELAY(f=1MHz;50%dutycycle) 4/9
74V1G08 SOT23-5L MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.10 0.0 3.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 1.50 1.75 59.0 68.8 e 0.95 37.4 H 2.60 3.00 102.3 118.1 L 0.10 0.60 3.9 23.6 . 7049676C 5/9
74V1G08 SOT323-5L MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. A 0.80 1.10 31.5 43.3 A1 0.00 0.10 0.0 3.9 A2 0.80 1.00 31.5 39.4 b 0.15 0.30 5.9 11.8 C 0.10 0.18 3.9 7.1 D 1.80 2.20 70.9 86.6 E 1.80 2.40 70.9 94.5 E1 1.15 1.35 45.3 53.1 e 0.65 25.6 e1 1.3 51.2 L 0.10 0.30 3.9 11.8 6/9
74V1G08 Tape & Reel SOT23-xL MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 180 7.086 C 12.8 13.0 13.2 0.504 0.512 0.519 D 20.2 0.795 N 60 2.362 T 14.4 0.567 Ao 3.13 3.23 3.33 0.123 0.127 0.131 Bo 3.07 3.17 3.27 0.120 0.124 0.128 Ko 1.27 1.37 1.47 0.050 0.054 0.0.58 Po 3.9 4.0 4.1 0.153 0.157 0.161 P 3.9 4.0 4.1 0.153 0.157 0.161 7/9
74V1G08 Tape & Reel SOT323-xL MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 175 180 185 6.889 7.086 7.283 C 12.8 13 13.2 0.504 0.512 0.519 D 20.2 0.795 N 59.5 60 60.5 2.362 T 14.4 0.567 Ao 2.25 0.088 Bo 2.7 0.106 Ko 1.2 0.047 Po 3.9 4 4.1 0.153 0.157 0.161 P 3.8 4 4.2 0.149 0.157 0.165 8/9
74V1G08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9