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4 N 2 9 December 2014 M , 4 N 3 0 M , 4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M N 3 2 6-Pin DIP General Purpose Photodarlington Optocoupler M , 4 N Features Description 3 3 ■ High Sensitivity to Low Input Drive Current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and M ■ Meets or Exceeds All JEDEC Registered TIL113M have a gallium arsenide infrared emitter opti- , H Specifications cally coupled to a silicon planar photodarlington. 1 1 ■ Safety and Regulatory Approvals: B 1 – UL1577, 4,170 VAC for 1 Minute M RMS ■ DIN-EN/IEC60747-5-5, 850 V Peak Working , T Insulation Voltage IL 1 1 3 M Applications — ■ Low Power Logic Circuits 6 ■ Telecommunications Equipment - P ■ Portable Electronics in ■ Solid State Relays D I ■ Interfacing Coupling Systems of Different Potentials P and Impedances G e n e r Schematic a l P u r p o s e ANODE 1 6 BASE P 6 h o 6 t 1 o d CATHODE 2 5 COLLECTOR 1 a r l i n g 6 to N/C 3 4 EMITTER n 1 O p Figure 2. Package Outlines t o c Figure 1. Schematic o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4

4 N Safety and Insulation Ratings 2 9 M As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit , data. Compliance with the safety ratings shall be ensured by means of protective circuits. 4 N Parameter Characteristics 3 0 M Installation Classifications per DIN VDE < 150 VRMS I–IV , 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I–IV 4N 3 Climatic Classification 55/100/21 2 M Pollution Degree (DIN VDE 0110/1.89) 2 , 4 Comparative Tracking Index 175 N 3 3 M Symbol Parameter Value Unit , H Input-to-Output Test Voltage, Method A, V x 1.6 = V , 1 IORM PR 1360 V 1 Type and Sample Test with t = 10 s, Partial Discharge < 5 pC peak B m VPR 1 Input-to-Output Test Voltage, Method B, V x 1.875 = V , M IORM PR 1594 V 100% Production Test with tm = 1 s, Partial Discharge < 5 pC peak , T I V Maximum Working Insulation Voltage 850 V L IORM peak 1 V Highest Allowable Over-Voltage 6000 V 1 IOTM peak 3 External Creepage ≥ 7 mm M External Clearance ≥ 7 mm — External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm 6- P DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm in T Case Temperature(1) 175 °C D S I I Input Current(1) 350 mA P S,INPUT G PS,OUTPUT Output Power(1) 800 mW e n R Insulation Resistance at T , V = 500 V(1) > 109 Ω e IO S IO r a Note: l P 1. Safety limit values – maximum values allowed in the event of a failure. u r p o s e P h o t o d a r l i n g t o n O p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 2

4 N Absolute Maximum Ratings 2 9 M Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be , operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 4 N In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. 3 The absolute maximum ratings are stress ratings only. 0 M Symbol Parameter Value Unit , 4 N TOTAL DEVICE 3 2 TSTG Storage Temperature -40 to +125 °C M T Operating Temperature -40 to +100 °C , OPR 4 N T Junction Temperature -40 to +125 °C J 3 3 TSOL Lead Solder Temperature 260 for 10 seconds °C M Total Device Power Dissipation @ T = 25°C 270 mW , A H P D Derate Above 25°C 3.3 mW/°C 1 1 B EMITTER 1 M I Continuous Forward Current 80 mA F , T V Reverse Voltage 3 V R IL I (pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A 1 F 1 LED Power Dissipation @ T = 25°C 120 mW 3 A M P D Derate above 25°C 2.0 mW/°C — DETECTOR 6 - BV Collector-Emitter Breakdown Voltage 30 V P CEO i n BVCBO Collector-Base Breakdown Voltage 30 V D BVECO Emitter-Collector Breakdown Voltage 5 V IP Detector Power Dissipation @ T = 25°C 150 mW G A P e D Derate Above 25°C 2.0 mW/°C n e I Continuous Collector Current 150 mA r C a l P u r p o s e P h o t o d a r l i n g t o n O p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 3

4 N Electrical Characteristics 2 9 M T = 25°C Unless otherwise specified. A , 4 Individual Component Characteristics N 3 Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 0 M EMITTER , 4 4NXXM 1.2 1.5 V N 3 VF Input Forward Voltage(2) IF = 10 mA H11B1M, 2 0.8 1.2 1.5 V M TIL113M , 4 VR = 3.0 V 4NXXM 0.001 100 µA N IR Reverse Leakage Current(2) V = 6.0 V H11B1M, 0.001 10 µA 33 R TIL113M M C Capacitance(2) V = 0V, f = 1.0 MHz All 150 pF , H F 1 DETECTOR 1 B 4NXXM, 1 Collector-Emitter Breakdown 30 60 V M BV I = 1.0 mA, I = 0 TIL113M CEO Voltage(2) C B , T H11B1M 25 60 V I L Collector-Base Breakdown 1 BV I = 100 µA, I = 0 All 30 100 V 1 CBO Voltage(2) C E 3 M 4NXXM 5.0 10 V Emitter-Collector Breakdown — BVECO Voltage(2) IE = 100 µA, IB = 0 H11B1M, 7 10 V 6 TIL113M - P I Collector-Emitter Dark V = 10 V, Base Open All 1 100 nA in CEO Current(2) CE D I Notes: P G 2. Indicates JEDEC registered data. e n e r a l P u r p o s e P h o t o d a r l i n g t o n O p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 4

4 N Electrical Characteristics (Continued) 2 9 M T = 25°C Unless otherwise specified. A , 4 Transfer Characteristics N 3 Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 0 M DC CHARACTERISTICS , 4 N 4N32M, 50 (500) mA (%) 3 I = 10 mA, V = 10 V, 4N33M 2 F CE M I Collector Output IB = 0 4N29M, 10 (100) mA (%) , 4 C(CTR) Current(3)(4)(5) 4N30M N I = 1 mA, V = 5 V H11B1M 5 (500) mA (%) 3 F CE 3 M I = 10 mA, V = 1 V TIL113M 30 (300) mA (%) F CE , H 4NXXM 1.0 V I = 8 mA, I = 2.0 mA 1 V Saturation Voltage(3)(5) F C TIL113M 1.25 V 1 CE(SAT) B I = 1 mA, I = 1 mA H11B1M 1.0 V 1 F C M AC CHARACTERISTICS , T I I = 200 mA, I = 50 mA, 4NXXM, L VFCC = 10 V, RLC = 100 Ω TIL113M 5.0 µs 11 ton Turn-on Time 3 IF = 10 mA, VCE = 10 V, H11B1M 25 µs M R = 100 Ω L — 4N32M, 6 4N33M, 100 µs - P I = 200 mA, I = 50 mA, F C TIL113M i Turn-off Time VCC = 10 V, RL = 100 Ω n t 4N29M, D off 40 µs I 4N30M P G I = 10 mA, V = 10 V, F CE H11B1M 18 µs e RL = 100 Ω n e BW Bandwidth(6)(7) 30 kHz ra l Notes: P u 3. Indicates JEDEC registered data. r p 4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current. o 5. Pulse test: pulse width = 300 µs, duty cycle ≤ 2.0% . s e 6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms. P 7. The frequency at which I is 3 dB down from the 1 kHz value. h C o t o Isolation Characteristics d a r Symbol Characteristic Test Conditions Min. Typ. Max. Unit l i n V Input-Output Isolation Voltage t = 1 Minute 4170 VAC g ISO RMS t o CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF n R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω O ISO I-O A p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 5

4 N Typical Performance Curves 2 9 M 1.8 1.6 , 1.7 1.4 VTAC E= =2 55°.0C V NIFo =rm 1a0l imzeAd to 4N3 0 WARD VOLTAGE (V) 111...456 TA = -55°C RTC DEZILAM 011...802 M, 4N32M - FORF 11..23 TA = 25°C RON 00..46 , 4N V 3 TA = 100°C 3 1.1 0.2 M 1.0 0.0 , H 1 10 100 0 2 4 6 8 10 12 14 16 18 20 1 IF - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) 1 B Figure 3. LED Forward Voltage vs. Forward Current Figure 4. Normalized CTR vs. Forward Current 1 M , T I 1.4 1.0 L )N) 1 E 0.9 1 1.2 IF = 5 mA TRRBE(OP 00..78 IF = 20 mAIF = 10 mA 3M — RTC DEZILAMRON 001...680 IF = I2F 0= m10A mA D CTR ( CTR / CRBE 0000....3456 IF = 5 mA 6-Pin DI ZE 0.2 P 0.4 Normalized to MALI 0.1 VCE= 5.0 V G IF = 10 mA R e TA = 25°C O 0.0 n N e 0.2-60 -40 -20 0 20 40 60 80 100 10 100 1000 ra TA - AMBIENT TEMPERATURE (°C) RBE- BASE RESISTANCE (kΩ) l P Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. CTR vs. RBE (Unsaturated) u r p o s 1.0 100 e )N) P E 0.9 h ALIZED CTR ( CTR / CTRRBERBE(OP 0000000.......2345678 IIIFFF === 1520 0m mmAAA VCE= 0.3 V V - COLLECTOR-EMITTER CE (SAT)SATURATION VOLTAGE (V) 00.10.1011 TA = 25˚C IF = 2.5 mA IF = 20 mA otodarlington Op ORM 0.1 IF = 5 mA IF = 10 mA to N c 0.0 0.001 o 10 100 1000 0.01 0.1 1 10 u RBE- BASE RESISTANCE (k Ω) IC - COLLECTOR CURRENT (mA) p l Figure 7. CTR vs. RBE (Saturated) Figure 8. Collector-Emitter Saturation Voltage e r vs. Collector Current ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 6

4 N Typical Performance Curves (Continued) 2 9 M 1000 5.0 , 4 μ)s( DEEPS GNIHCTIWS110100 IVTFAC = C= 1 =20 51 m°0C AV Toff TTorn Tf )t / t( - t DEZILAM)nepo(no)R(nonoEB 1223344.......5050505 RVILCC =C= 1=2 0 1m00 A ΩV N30M, 4N32M, 4N3 R O 3 N 1.0 M , 0.1 0.5 H 0.1 1 10 100 10 100 1000 10000 100000 1 R-LOAD RESISTOR (kΩ) RBE- BASE RESISTANCE (kΩ) 1B Figure 9. Switching Speed vs. Load Resistor Figure 10. Normalized ton vs. RBE 1 M , T I L 11..34 )An( T 10000 VTAC E= =2 51°0C V 113 )t / t( - t DEZILAMR)nepo(ffo)R(ffoffoEB 000000111.........456789012 RVILCC =C= 1=2 0 1m00 A ΩV NERRUC KRAD RETTIME- ROTCELLO 1100100.10010 M — 6-Pin DIP G ON 0.3 C - O 0.01 en 0.2 EC e 0.1 I 0.0010 20 40 60 80 100 ra 10 100 1000 10000 100000 l P RBE- BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) u r Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature po s e P Switching Time Test Circuit and Waveform h o t o d VCC = 10 V a r INPUT PULSE l i n IF IC RL g t o 10% n INPUT OUTPUT OUTPUT PULSE O 90% RBE p tr tf to c ton toff o u Adjust IF to produce IC = 2 mA p l e r Figure 13. Switching Time Test Circuit and Waveform ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 7

4 N Reflow Profile 2 9 M 300 , 4 260°C N 280 3 0 260 M 240 > 245°C = 42 s , 4 N 220 3 2 200 M 180 , Time above 4 N °C 160 183°C = 90 s 3 3 140 M 120 , H 100 1.822°C/s Ramp-up rate 1 1 B 80 1 60 M 40 , T I 33 s L 20 1 1 0 3 0 60 120 180 270 360 M — Time (s) 6 - P Figure 14. Reflow Profile i n D I P G e n e r a l P u r p o s e P h o t o d a r l i n g t o n O p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 8

4 N Ordering Information 2 9 M Part Number Package Packing Method , 4 N 4N29M DIP 6-Pin Tube (50 Units) 3 0 4N29SM SMT 6-Pin (Lead Bend) Tube (50 Units) M 4N29SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) , 4 N 4N29VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 3 2 4N29SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) M 4N29SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) , 4 N 4N29TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 3 3 Note: M 8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M, , H and TIL113M devices. 1 1 B 1 Marking Information M , T I L 1 1 1 3 M — 4N29 2 6 - P V X YY Q 6 i n D I P 3 4 5 G e n e Figure 15. Top Mark r a l Table 1. Top Mark Definitions P u 1 Fairchild Logo r p o 2 Device Number s e 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) P 4 One-Digit Year Code, e.g., “4” h o 5 Digit Work Week, Ranging from “01” to “53” to d 6 Assembly Package Code a r l i n g t o n O p t o c o u p l e r ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.4 9

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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