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4 N 2 5 April 2015 M , 4 N 2 6 M , 4 N 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M 2 7 6-Pin General Purpose Phototransistor Optocouplers M , 4 N 2 Features Description 8 M ■ Minimum Current Transfer Ratio at IF = 10 mA, The general purpose optocouplers consist of a gallium , 4 V = 10 V: arsenide infrared emitting diode driving a silicon photo- CE N – 10% for 4N27M and 4N28M transistor in a standard plastic six-pin dual-in-line 3 5 package. – 20% for 4N25M and 4N26M M – 100% for 4N35M, 4N36M and 4N37M , 4 N ■ Safety and Regulatory Approvals: 3 – UL1577, 4,170 VAC for 1 Minute 6 RMS M – DIN-EN/IEC60747-5-5, 850 V Peak Working , Insulation Voltage 4 N 3 Applications 7 M ■ Power Supply Regulators — ■ Digital Logic Inputs 6 ■ Microprocessor Inputs -P i n G e Schematic Package Outlines n e r a l 1 6 P u r p o 2 5 s e P h o 3 NC 4 t o t r a n s PIN 1. ANODE i s 2. CATHODE t o 3. NO CONNECTION r O 4. EMITTER Figure 2. Package Outlines p 5. COLLECTOR t o 6. BASE c o u Figure 1. Schematic p l e r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3

4 N Safety and Insulation Ratings 2 5 M As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit , data. Compliance with the safety ratings shall be ensured by means of protective circuits. 4 N Parameter Characteristics 2 6 M Installation Classifications per DIN VDE < 150 VRMS I–IV , 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I–IV 4N 2 Climatic Classification 55/100/21 7 M Pollution Degree (DIN VDE 0110/1.89) 2 , 4 Comparative Tracking Index 175 N 2 8 M Symbol Parameter Value Unit , 4 N Input-to-Output Test Voltage, Method A, V x 1.6 = V , IORM PR 1360 V 3 Type and Sample Test with t = 10 s, Partial Discharge < 5 pC peak 5 V m M PR I1n0p0u%t-t oP-rOoduutpcutito Tne Tset sVto wltaithg et, M =e 1th so,d P Ba,r tViaIOl DRMis cxh 1a.r8g7e5 < = 5 V pPCR, 1594 Vpeak , 4 m N 3 V Maximum Working Insulation Voltage 850 V IORM peak 6 M V Highest Allowable Over-Voltage 6000 V IOTM peak , External Creepage ≥ 7 mm 4 N External Clearance ≥ 7 mm 3 7 M External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm — DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm 6 T Case Temperature(1) 175 °C - S P IS,INPUT Input Current(1) 350 mA in P Output Power(1) 800 mW G S,OUTPUT e R Insulation Resistance at T , V = 500 V(1) > 109 Ω n IO S IO e r Note: a l 1. Safety limit values – maximum values allowed in the event of a failure. P u r p o s e P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 2

4 N Absolute Maximum Ratings 2 5 M Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be , operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 4 N In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. 2 The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. 6 A M Symbol Parameter Value Unit , 4 N TOTAL DEVICE 2 7 TSTG Storage Temperature -40 to +125 °C M T Operating Temperature -40 to +100 °C , OPR 4 N T Junction Temperature -40 to +125 ºC J 2 8 TSOL Lead Solder Temperature 260 for 10 seconds °C M Total Device Power Dissipation @ T = 25°C 270 mW , A 4 PD N Derate Above 25°C 2.94 mW/°C 3 5 EMITTER M I DC/Average Forward Input Current 60 mA , F 4 N V Reverse Input Voltage 6 V R 3 6 IF(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3 A M LED Power Dissipation @ T = 25°C 120 mW , A 4 PD N Derate Above 25°C 1.41 mW/°C 3 7 DETECTOR M V Collector-to-Emitter Voltage 30 V — CEO VCBO Collector-to-Base Voltage 70 V 6 - P V Emitter-to-Collector Voltage 7 V ECO i n Detector Power Dissipation @ T = 25°C 150 mW A G P D Derate Above 25°C 1.76 mW/°C e n e r a l P u r p o s e P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 3

4 N Electrical Characteristics 2 5 M TA = 25°C unless otherwise specified. , 4 Individual Component Characteristics N 2 Symbol Parameter Test Conditions Min. Typ. Max. Unit 6 M EMITTER , 4 V Input Forward Voltage I = 10 mA 1.18 1.50 V N F F 2 I Reverse Leakage Current V = 6.0 V 0.001 10 µA 7 R R M DETECTOR , 4 BV Collector-to-Emitter Breakdown Voltage I = 1.0 mA, I = 0 30 100 V N CEO C F 2 BV Collector-to-Base Breakdown Voltage I = 100 µA, I = 0 70 120 V 8 CBO C F M BVECO Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 7 10 V , 4 I Collector-to-Emitter Dark Current V = 10 V, I = 0 1 50 nA N CEO CE F 3 I Collector-to-Base Dark Current V = 10 V 20 nA 5 CBO CB M CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF , 4 N Transfer Characteristics 3 6 M Symbol Parameter Test Conditions Device Min. Typ. Max. Unit , 4 DC CHARACTERISTICS N 3 4N35M, 4N36M, 100 % 7 4N37M M I = 10 mA, V = 10 V F CE 4N25M, 4N26M 20 % — 4N27M, 4N28M 10 % 6 Current Transfer Ratio, - CTR P Collector-to-Emitter IF = 10 mA, VCE = 10 V, 4N35M, 4N36M, 40 % in TA = -55°C 4N37M G e IF = 10 mA, VCE = 10 V, 4N35M, 4N36M, n 40 % e T = +100°C 4N37M A r a 4N25M, 4N26M, l Collector-to-Emitter IC = 2 mA, IF = 50 mA 4N27M, 4N28M 0.5 V Pu VCE (SAT) Saturation Voltage 4N35M, 4N36M, rp IC = 0.5 mA, IF = 10 mA 4N37M 0.3 V os e AC CHARACTERISTICS P IF = 10 mA, VCC = 10 V, 4N25M, 4N26M, 2 µs ho R = 100 Ω (Figure 13) 4N27M, 4N28M t Non-Saturated L o TON Turn-on Time IC = 2 mA, VCC = 10 V, 4N35M, 4N36M, tra R = 100 Ω (Figure 13) 4N37M 2 10 µs n L s i IF = 10 mA, VCC = 10 V, 4N25M, 4N26M, st RL = 100 Ω (Figure 13) 4N27M, 4N28M 2 µs or TOFF Turn-off Time O IC = 2 mA, VCC = 10 V, 4N35M, 4N36M, p 2 10 µs RL = 100 Ω (Figure 13) 4N37M to c o Isolation Characteristics u p Symbol Characteristic Test Conditions Min. Typ. Max. Unit le r s V Input-Output Isolation Voltage t = 1 Minute 4170 VAC ISO RMS C Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF ISO I-O R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω ISO I-O A ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 4

4 N Typical Performance Curves 2 5 M 1.8 1.6 , 4 1.7 1.4 VTAC E= =2 55°.0C V NIFo =rm 1a0l imzeAd to N2 6 LTAGE (V) 11..56 RTC 11..02 M, 4N VO D 2 V - FORWARD F 111...234 TTAA == 2-555°°CC EZILAMRON 000...468 7M, 4N2 8 TA = 100°C M 1.1 0.2 , 4 1.0 0.0 N 1 10 100 0 2 4 6 8 10 12 14 16 18 20 3 IF - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) 5 M Figure 3. LED Forward Voltage vs. Forward Current Figure 4. Normalized CTR vs. Forward Current , 4 N 3 6 1.4 1.0 M 1.2 )E(OPEN) 00..89 IF = 20 mA , 4N RTC DE 1.0 IF = 10 mAI F = 5 mA R / CTRRBERB 000...567 IF = 10 mA IF = 5 mA 37M — ZIL 0.8 CT 6 AM R ( 0.4 -P RON 0.6 IF = 20 mA D CT 0.3 in ZE 0.2 G 0.4 MALI 0.1 VCE = 5.0 V en NITFAo = r=m 1 2a05l im°zCeAd to NOR 0.0 era 0.2 l -60 -40 -20 0 20 40 60 80 100 10 100 1000 P TA - AMBIENT TEMPERATURE (°C) RBE- BASE RESISTANCE (kΩ) u r Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. CTR vs. RBE (Unsaturated) p o s e 1.0 100 P )EN) 0.9 ho / CTRBERBE(OP 000...678 IF = 20 mA VCE= 0.3 V TOR-EMITTER OLTAGE (V) 110 TA = 25˚C totransi ALIZED CTR ( CTRR 0000....2345 IF I=F 1 =0 5m mAA V - COLLECCE (SAT)SATURATION V00.0.11 IF = 2.5 mA IF = 20 mA stor Optoc M o OR 0.1 u N 0.0 0.001 IF = 5 mA IF = 10 mA pl 10 100 1000 0.01 0.1 1 10 e RBE- BASE RESISTANCE (kΩ) IC - COLLECTOR CURRENT (mA) rs Figure 7. CTR vs. RBE (Saturated) Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 5

4 N Typical Performance Curves (Continued) 2 5 M μ)s( - DEEPS GNIHCTIWS1101001000 IVTFAC = C= 1 =20 51 m°0C AV Toff TTorn Tf )t / t( - t DEZILAMR)nepo(no)R(nonoEB 12233445........50505050 VIRCCL = C= 2 =1 m0100A VΩ , 4N26M, 4N27M, 4N2 O 8 N 1.0 M 0.1 0.5 , 4 0.1 1 10 100 10 100 1000 10000 100000 N R - LOAD RESISTOR (kΩ) RBE - BASE RESISTANCE (kΩ) 3 5 Figure 9. Switching Speed vs. Load Resistor Figure 10. Normalized ton vs. RBE M , 4 N 3 1.4 )A 10000 6 )t / t( - t DEZILAMRON)nepo(ffo)R(ffoffoEB 00000001111...........34567890123 VIRCCL = C= 2 =1 m0100A VΩ n( TNERRUC KRAD RETTIME- ROTCELLOC - OE 10100.1000.000111 VTAC E= =2 51°0C V M, 4N37M — 6-Pin Ge 0.2 IC n 0.1 0.001 e 10 100 1000 10000 100000 0 20 40 60 80 100 ra RBE - BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) l P Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature u r p o s e Switching Time Test Circuit and Waveforms P h o t o TEST CIRCUIT WAVE FORMS t r a n VCC = 10 V si s INPUT PULSE t o IF IC RL r O 10% p INPUT OUTPUT OUTPUT PULSE to 90% c RBE o tr tf u p ton toff le Adjust IF to produce IC = 2 mA r s Figure 13. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 6

4 N Reflow Profile 2 5 M 300 , 4 260°C N 280 2 6 260 M 240 > 245°C = 42 s , 4 N 220 2 7 200 M 180 , Time above 4 N °C 160 183°C = 90 s 2 8 140 M 120 , 4 100 1.822°C/s Ramp-up rate N 3 5 80 M 60 , 4 N 40 3 20 33 s 6 M 0 , 0 60 120 180 270 360 4 N Time (s) 3 7 M Figure 14. Reflow Profile — 6 - P i n G e n e r a l P u r p o s e P h o t o t r a n s i s t o r O p t o c o u p l e r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 7

4 N Ordering Information 2 5 M Part Number Package Packing Method , 4 N 4N25M DIP 6-Pin Tube (50 Units) 2 6 4N25SM SMT 6-Pin (Lead Bend) Tube (50 Units) M 4N25SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) , 4 N 4N25VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 2 7 4N25SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) M 4N25SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) , 4 N 4N25TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 2 8 Note: M 2. The product orderable part number system listed in this table also applies to the 4N26M, 4N27M, 4N28M, 4N35M, , 4 4N36M, and 4N37M devices. N 3 5 M Marking Information , 4 N 3 6 M 1 , 4 N 4N25 2 3 7 M V X YY Q 6 — 6 - P i n 3 4 5 G e n Figure 15. Top Mark e r a Table 1. Top Mark Definitions l P u 1 Fairchild Logo r p 2 Device Number o s 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) e P 4 One-Digit Year Code, e.g., “5” h o 5 Digit Work Week, Ranging from “01” to “53” t o 6 Assembly Package Code tr a n s i s t o r O p t o c o u p l e r s ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 8

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 4N25SR2M 4N25SR2VM 4N25VM 4N25M 4N25SVM 4N25TVM 4N25SM 4N25M_Q