2N7002K, 2V7002K Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 Features • ESD Protected • Low R DS(on) www.onsemi.com • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1.6 (cid:3) @ 10 V 60 V 380 mA • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2.5 (cid:3) @ 4.5 V Compliant SIMPLIFIED SCHEMATIC Applications • Low Side Load Switch • Gate 1 Level Shift Circuits • DC−DC Converter • Portable Applications i.e. DSC, PDA, Cell Phone, etc. 3 Drain MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Source 2 Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 V (Top View) Gate−to−Source Voltage VGS ±20 V Drain Current (Note 1) ID mA MARKING DIAGRAM Steady State 1 sq in Pad TA = 25°C 380 3 & PIN ASSIGNMENT TA = 85°C 270 Drain DrSaitne aCduyr rSetnatt e(N Moitnei m2)um Pad TA = 25°C ID 320 mA 1 3 TA = 85°C 230 2 704 M(cid:2) Power Dissipation PD mW SOT−23 (cid:2) Steady State 1 sq in Pad 420 CASE 318 Steady State Minimum Pad 300 STYLE 21 1 2 Gate Source Pulsed Drain Current (tp = 10 (cid:2)s) IDM 5.0 A 704 = Specific Device Code* Operating Junction and Storage TJ, TSTG −55 to °C M = Date Code* Temperature Range +150 (cid:2) = Pb−Free Package Source Current (Body Diode) IS 300 mA (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar Lead Temperature for Soldering Purposes TL 260 °C orientation and/or location may vary depend- (1/8″ from case for 10 s) ing upon manufacturing location. This is a representation only and actual devices may Gate−Source ESD Rating ESD 2000 V not match this drawing exactly. (HBM, Method 3015) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping† 1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. 2N7002KT1G, SOT−23 3000 / Tape & Reel 2V7002KT1G (Pb−Free) 2N7002KT7G SOT−23 3500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: March, 2019 − Rev. 17 2N7002K/D

2N7002K, 2V7002K THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note3) R(cid:4)JA 300 °C/W Junction−to−Ambient − t ≤ 5 s (Note 3) 92 Junction−to−Ambient − Steady State (Note4) 417 Junction−to−Ambient − t ≤ 5 s (Note 4) 154 3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 (cid:2)A 60 V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 71 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1 (cid:2)A VDS = 60 V TJ = 125°C 10 VGS = 0 V, TJ = 25°C 100 nA VDS = 50 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 (cid:2)A VDS = 0 V, VGS = ±10 V 450 nA VDS = 0 V, VGS = ±5.0 V 150 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 (cid:2)A 1.0 2.3 V Negative Threshold Temperature VGS(TH)/TJ 4.0 mV/°C Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 (cid:3) VGS = 4.5 V, ID = 200 mA 1.33 2.5 Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS CHARGES AND CAPACITANCES Input Capacitance CISS 24.5 45 pF Output Capacitance COSS VGS = 0 V, f = 1 MHz, 4.2 8.0 VDS = 20 V Reverse Transfer Capacitance CRSS 2.2 5.0 Total Gate Charge QG(TOT) 0.7 nC Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; 0.1 Gate−to−Source Charge QGS ID = 200 mA 0.3 Gate−to−Drain Charge QGD 0.1 SWITCHING CHARACTERISTICS, VGS = V (Note 6) Turn−On Delay Time td(ON) 12.2 ns Rise Time tr VGS = 10 V, VDD = 25 V, 9.0 Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25 (cid:3) 55.8 Fall Time tf 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V IS = 200 mA TJ = 85°C 0.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 (cid:2)s, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2

2N7002K, 2V7002K TYPICAL CHARACTERISTICS 1.6 1.2 VGS = 10 V 5.0 V 4.5 V 9.0 V A) 8.0 V 4.0 V A) T ( 1.2 7.0 V T ( N 6.0 V N 0.8 E E R R R 3.5 V R U 0.8 U C C AIN AIN TJ = 25°C R 3.0 V R 0.4 D D , D 0.4 , D I I 2.5 V TJ = 125°C TJ = −55°C 0 0 0 2 4 6 0 2 4 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics (cid:3)) (cid:3)) E ( 3.2 E ( 3.2 C C STAN 2.8 VGS = 4.5 V TJ = 125°C STAN 2.8 VGS = 10 V ESI 2.4 TJ = 85°C ESI 2.4 TJ = 125°C R R CE 2.0 TJ = 25°C CE 2.0 TJ = 85°C R R U U −SO 1.6 TJ = −55°C −SO 1.6 TJ = 25°C O 1.2 O 1.2 −T −T TJ = −55°C N 0.8 N 0.8 AI AI R R D 0.4 D 0.4 , n) , n) o 0 o 0 S( S( D 0 0.2 0.4 0.6 0.8 1.0 1.2 D 0 0.2 0.4 0.6 0.8 1.0 1.2 R R ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and Temperature Temperature (cid:3)) E ( 2.4 2.2 NC ID = 0.2 A AIN−TO−SOURCE RESISTA 0112....8620 ID = 20I0D m =A 500 mA , DRAIN−TO−SOURCEDS(on)ESISTANCE (NORMALIZED) 111...048 VGS = 4.5 VVGS = 10 V R RR D , n) 0.4 0.6 o S( 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150 D R VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with Voltage Temperature www.onsemi.com 3

2N7002K, 2V7002K TYPICAL CHARACTERISTICS 30 V) 5 Ciss GE ( TJ = 25°C F) LTA 4 ID = 0.2 A p O TANCE ( 20 TJ = 25°C URCE V 3 CI VGS = 0 V O PA Coss −S 2 A 10 O C T C, E− T 1 A G 0 Crss V, GS 0 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 2.5 VGS = 0 V E (V) 22..43 ID = 250 (cid:2)A A) G 2.2 T ( TA 2.1 N L E 1 O 2.0 RR D V 1.9 U L 1.8 E C TJ = 85°C TJ = 25°C HO 1.7 URC 0.1 HRES 11..65 O T 1.4 I, SS , S(TH) 11..23 G 1.1 V 0.01 1.0 0.4 0.6 0.8 1.0 1.2 −50 −25 0 25 50 75 100 125 150 VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with Temperature www.onsemi.com 4

2N7002K, 2V7002K TYPICAL CHARACTERISTICS 1000 T EN Duty Cycle = 0.5 NSIE100 0.2 RANC 0.1 E TTA 0.05 TIVSIS 10 0.02 CE ER W) EFFRMAL 1 0.01 C/HE SINGLE PULSE ° T (A(t) 0.1 (cid:4)J 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 R t, PULSE TIME (s) Figure 11. Thermal Response − 1 sq in pad 1000 NT Duty Cycle = 0.5 E ANSICE100 00..21 TIVE TRSISTAN 10 00..0025 CE ER W) EFFRMAL 1 0.01 C/HE SINGLE PULSE ° T (A(t) 0.1 (cid:4)J 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 R t, PULSE TIME (s) Figure 12. Thermal Response − minimum pad www.onsemi.com 5

2N7002K, 2V7002K PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 21: END VIEW PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com 2N7002K/D 6