This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3025 Silicon N-channel power MOS FET ■ Features ■ Package •Avalanche energy capability guaranteed /•Code •High-speed switching eU-DL •Low ON resistance Ron •Pin Name •No secondary breakdown 1: Gate •Low-voltage drive c 2: Drain •High electrostatic energy capability d 3: Source n ■ Applications e •Non-contact relay ■ Marking Symbol: K302e5. a g •Solenoid drive a ••MCoonttorro dl reiqvueipment n u■ Internal Conneclcet iostn •Switching mode regulator n cy D e ■ Absolute Maximum Ratiengs TC = 25°C Gct lif i u Parameter Symbol Rating Unit d t t o Drain-source surrender voltage V 60 V r Gate-source surrendern voltage VDGSSSS n±20 V ur P S Drain current I ±30 A o Peak drain cuirrent IoDDP ±90 A ng f ype on. ■NDDGGAPCSotothEvarraMeoaawttaa)reeiilnlaenne- *angtrs--nh:c osseedcrLoo luteiht ruu sretse=iecsrrmahc ccm ieeo0paee pnc.lpa e1dPlecsute r ui rutCrmaaovgoratDtrnooryfuHthaeuflf rt ncmf,raeiac aedIcguerLpeuera tarr=re bercv reni3otlnt0ielttst yTAra inga*s, ec=1ti ecp2/u5scl°D siC eTsCc o=SETTPn AyVtIIs2cDVitmDGhgSD5SStnShbSS°SuoCle− ±d5 5IVVV i3D p1DGDtn l24°o=15SSScC55 a 0l+===1n1u m15±5ed0020A d0eVV p, l sV,,V mamfIV,CG DaVm°°naoWSGi iolCC= SlDeJ=nnn St=1 otdd 0 =eime0tw diin0doinAinasasosncncwcocioenenn t ttitgi ynnepuUueemeRiddLc ttoayynb.ppM1ope6e.0iua0dnt nlaatsTeoysnpti ic.ncfMoo±2.1rj1.a050pxm/aetin/UµµVVnAAit FDorarwina-rsdo utrracnes OfeNr ardemsinsittttaeannncceae RDYS(fosn)1 VVDGSS == 1100 VV,, IIDD s==it 11 f55 oAAllww.s 10 2158 40 mSΩ Diode forward voMlatiage RVDSD(SoFn)2 VIDGRS = = 1 45 VsA,e, IVDvi G=S 1=5 p0 :A//w 35 −515.3 V Short-circuit forward transfer capacitance Ciss VDS =e 1a0 V, VGhtSt = 0, f = 1 MHz 1 200 pF (Common source) Pl Short-circuit output capacitance Coss 400 pF (Common source) Reverse transfer capacitance C 200 pF rss (Common source) Turn-on delay time t V = 30 V, I = 15 A, R = 2 Ω 10 ns d(on) DD D L Rise time t V = 10 V 20 ns r GS Fall time t 140 ns f Turn-off delay time t 350 ns d(off) Thermal resistance (ch-c) R 5.0 °C/W th(ch-c) Thermal resistance (ch-a) R 125 °C/W th(ch-a) Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: May 2008 SJG00011CED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SK3025 U-DL Unit: mm / e 6.5 ±0.1 5.3 ±0.1 2.3 ±0.1 c 4.35 ±0.1 d 0.5 ±0.1 n e e. a g a u st 3 ±0.1 1.8 ±0.1 n n ecycle 7. e ct lif i u d t t o i2.5 ±0.1 n 1 o2n3 2.3 ±0.1 g fo1u.r0 0 ±pP.001r.e.1 5±0 ±.005.1 1.0 ±0.2 n. n y o M aDiscDiscon4ti.6n ±u02.1e.3d ±i0p.n1lcalnued0de p.l7s m5amf a±naoii0ll.en1ntotd eewdindiniasasncnccocoenen t ttitgi ynn(puU((u453ee.eR.3.30dd5L )) t)toayynb.ppopeeuadt nlaatseo(1.8)snti ic.ncfoo.rjpm/aetin/ ntenance/ sit followwiwn.semic (5.5) ai vi w M se p:// ea htt Pl 2 SJG00011CED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household /appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- ucts may directly jeopardize life or harm the human body. c (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-.to-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. g a u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to exclceed the range of absolute y maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwisec, we will not be liable for any e (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocft i nlicfidence of break down and failure mode, possible to occur to semiconductor products. Measiures on the systems such as redunudant design, arresting the spread of fire d or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r (6)(cid:9)Comply with the instnructions for use in order to prnevent breakdown and characteurirs ticPs change due to external factors (ESD, EOS, tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodr gta htfe c oeulsatposmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa gfoen.rs .which n y o 200808(075)(cid:9)ThMis booka may bDe niot reprisnted or crDeipsrocdoucnteid nwuheetdh eirp nlwcalhonuleldyd eo plsr mampfaanaoiriltleninatotdl leeywdin,din iwasasinctnchcocooeunen t ttti tgit yhnnepuU upeeerRidodL rtt owayynrb.ppitopeteeuadnt npleaartsmeoissnstii oicn.n cfofoo .orjuprm/ caeotimn/pany. ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl