2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 (cid:122)Structure (cid:122)External dimensions (Unit : mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 (cid:122)Features 1.5 1) Low On-resistance. 23)) WFaidste s SwOitcAh i(nsga fsep oepeedr.a ting area). 0.9 5.5 1.59.5 4) 4V drive. 0.75 2.5 56)) PDarirvaell ecli rucsueits i sc aena sbye. simple. ((12))GDraatien 0.9(1)2.3(2) (3)0.26.53 0.8Min.01..50 (3)Source Abbreviated symbol : K2094 (cid:122)Applications Switching (cid:122)Packaging specifications (cid:122)Inner circuit Package Taping Code TL Type Basic ordering unit (pieces) 2500 2SK2094 (1) Gate (1) (2) (3) (2) Drain (3) Source (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID 2 A Drain current ∗ Pulsed IDP 8 A Reverse drain Continuous IDR 2 A current Pulsed IDRP∗ 8 A Total power dissipation(Tc=25°C) PD 10 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗ Pw ≤ 300µs, Duty cycle ≤ 2% Rev.A 1/4

2SK2094 Transistors (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-source leakage IGSS − − ±100 nA VGS= ±20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 60 − − V ID=1mA, VGS=0V Zero gate voltage drain current IDSS − − 100 µA VDS=60V, VGS=0V Gate threshold voltage VGS(th) 1.0 − 2.5 V VDS=10V, ID=1mA Sretsaitsicta dnrcaein-source on-state RDS(on) −− 00..43 00.3.55 Ω IIDD==11AA,, VVGGSS==140VV Forward transfer admittance Yfs 1.0 − − S VDS=10V, ID=1A Input capacitance Ciss − 400 − pF VDS=10V Output capacitance Coss − 150 − pF VGS=0V Reverse transfer capacitance Crss − 50 − pF f=1MHz Turn-on delay time td(on) − 10 − ns ID=1A, VDD=30V Rise time tr − 20 − ns VGS=10V Turn-off delay time td(off) − 100 − ns RL=30Ω Fall time tf − 40 − ns RG=10Ω Reverse recovery time (Body Diode) trr − 100 − ns IDR=2A, VGS=0V, di/dt=50A/µs Rev.A 2/4

2SK2094 Transistors (cid:122)Electrical characteristics curve 10 4 5 (A)AIN CURRENT : ID 000...125125 Opeirs altiiomint iend tbhiy s RarDe(Saon) DCP OW=p1e0ram1tmisosn (A)N CURRENT : ID 32 18640VVVV VGS=3VTPau=ls2e5d°C (A)N CURRENT : ID 0000.0...215215 Ta=1−27225555°°°°CCCC VPDuSl=s1e0dV DR0.05 DRAI 1 DRAI 0.02 0.02 Tc=25°C 0.01 0.01 Single pulse 0 0.005 0.10.2 0.5 1 2 5 10 20 50100 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics Fig.3 Typical Transfer Characteristics (V)TE THRESHOLD VOLTAGE : VGS(th) 3214 VlDD=S1=m10AV STATIC DRAIN-SOURCE Ω ()ON-STATE RESISTANCE : RDS(on)00..000001...251251250 Ta=1−27225555°°°°CCCC VPGuSl=s1e0dV STATIC DRAIN-SOURCE Ω()ON-STATE RESISTANCE : RDS(on) 00000..001...152152250 Ta=1−27225555°°°°CCCC VPGuSl=s4eVd A G 0 0.01 0.01 −50 −25 0 25 50 75 100 125 150 0.0050.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.005 0.010.02 0.05 0.1 0.2 0.5 1 2 5 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.4 Gate Threshold Voltage Fig.5 Static Drain-Source On-State Resistance Fig.6 Static Drain-Source On-State Resistance Fig.4 vs. Channel Temperature Fig.5 vs. Drain Current ( Ι ) Fig.6 vs. Drain Current ( ΙΙ ) STATIC DRAIN-SOURCE Ω ()ON-STATE RESISTANCE : RDS(on) 000000......123456 ID=21AA TPau=ls2e5d°C STATIC DRAIN-SOURCE Ω ()ON-STATE RESISTANCE : RDS(on) 00000000........27813456 VPIDGu=Sl1=sA1e0dV (S)WARD TRANSFER ADMITTANCE : YfS 00..000001...125251250 Ta= 1−22275555°°°°CCCC VPDuSls=e1d0V 0 0 OR0.01 0 5 10 15 20 −50 −25 0 25 50 75 100 125 150 F 0.005 0.010.02 0.05 0.1 0.2 0.5 1 2 5 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance Fig.8 Static Drain-Source On-State Resistance Fig.9 Forward Transfer Admittance Fig.7 vs. Gate-Source Voltage Fig.8 vs. Channel Temperature Fig.9 vs. Drain Current Rev.A 3/4

2SK2094 Transistors (A)NT : IDR 521 Ta=12755°°CC VPGuSls=e0dV (A)NT : IDR 125 VGS= 10V 0V TPau=ls2e5d°C pF)12000000 TVPf=aGu1S=lsM=2e0H5dV°zC URRE 0.5 −2255°°CC URRE 0.5 (E : C 500 Ciss RAIN C 00..21 RAIN C 00..12 CITANC 200 Coss D D A RSE 0.05 RSE 0.05 CAP 100 VE 0.02 VE0.02 50 Crss E E R 0.01 R0.01 0.005 20 0 0.5 1 1.5 0 0.5 1 1.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current Fig.11 Reverse Drain Current Fig.12 Typical Capacitance Fig.10 vs. Source-Drain Voltage ( Ι ) Fig.11 vs. Source-Drain Voltage ( ΙΙ ) Fig.12 vs. Drain-Source Voltage 500 10 Ta=25°C VDD=30V (ns)SWITCHING TIME : t2100521000005 tdtt(froftf)d(on) PRVuGGS=ls=1e10d0ΩV NORMALIZED TRANSIENT ( t )THERMAL RESISTANCE : r 00.0.111000D00.....00=2155210.01 Tθθttchh=((cc2hh--5cc))° (=Ct6)=.2r 5(t°)C / Wθth (ch-c) Single pulse PW D=PW 02.02 0.05 0.1 0.2 0.5 1 2 5 0.00 110µ 100µ 1m 10m 100m T 1 T 10 DRAIN CURRENT : ID (A) PULSE WIDTH : PW (s) Fig.13 Switching characteristics Fig.14 Normalized Transient Thermal Resistance vs . Pulse Width (See Figure. 15 and 16 for the measurement circuit and resultant waveforms) (cid:122)Switching characteristics measurement circuit Pulse Width 90% 50% 50% VGS ID VDS VGS 10% RG D.U.T. RL VDS 10% 10% V DD 90% 90% td(on) tr td(off) tf ton toff Fig.15 Switching Time Test Circuit Fig.16 Switching Time Waveforms Rev.A 4/4

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

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