2SD2653K Transistors Low frequency amplifier 2SD2653K !!!!Application !!!!External dimensions (Units : mm) Low frequency amplifier Driver ()1 0.4 ()3 ()2 0.950.951.92.9 !!!!Features 1.6 2.8 1) A collector current is large. 2) VCE(sat) ≤ 180mV 0.15 0.8 1.1 At IC = 1A / IB = 50mA 0.3Min. 0~0.1 Each lead has same dimensions ROHM : SMT3 Abbreviated symbol : FW (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Collector current IICCP 24 AA∗ Power dissipation PC 200 mW Junction temperature Tj 150 °C Range of storage temperature Tstg −55~+150 °C ∗Single pulse, PW=1ms !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 100 nA VCB=15V Emitter cutoff current IEBO − − 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) − 90 180 mV IC=1A, IB=50mA DC current gain hFE 270 − 680 − VCE=2V, IC=200mA∗ Transition frequency fT − 360 − MHz VCE=2V, IE=−200mA, f=100MHz∗ Corrector output capacitance Cob − 20 − pF VCB=10V, IE=0A, f=1MHz ∗ Pulsed !!!!Packaging specifications Package Taping Code T146 Type Basic ordering unit (pieces) 3000 2SD2653K

2SD2653K Transistors !!!!Electrical characteristic curves C CURRENT GAIN : hFE1010000 Ta=25°CTTaa==1−0400°°CC VPCuEls=e2dV OLLECTOR TO EMITTER (V)RATION VOLTAGE : VCE(sat) 0.00.111 IVPCCu/IElBs==e22dV0/1 Ta=100°C Ta=T−a4=02°5C°C TURATION VOLTAGE : V(V)CE(sat) 0.00.111 IC/IIBTPC=/auI2B=l0=s2/5e510°dC/1 D CSATU OR SA IC/IB=10/1 T 100.001 0.01 0.1 1 10 0.0001.001 0.01 0.1 1 10 LEC0.0001.001 0.01 0.1 1 10 L O COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) C COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.2 Base-emitter saturation voltage Fig.3 Collector-emitter saturation voltage vs. collector current vs. collector current vs. collector current 10 1000 1000 OLLECTOR CURRENT : I(A)C 0.00.111 Ta=100°C Ta=T−a4=02°5C°CVPCuEls=e2dV NSITION FREQUENCY : f(MHz)T 100 TVf=aC1=E0=2025MV°CHz SWITCHING TIME : (ns) 11000 TVf=aCt1tt=sdfE0t2o=g05n5M°VCHz C A R T 0.001 10 1 tr 0 0.5 1 1.5 0.001 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter current PACITANCE : Cib (pF)CAPACITANCE : Cob (pF)1100000 Cib fITC=a=1=0M2AH5˚zC R CURRENT : I(A)C 110 DC OpePraWti=o1n1000mm1smsTSsain=g2le5 °PCulsed NPUT CAOUTPUT 10 Cob OLLECTO 0.1 R IR C EO TT EMITLLEC 01.1 1 10 100 0.001.01 0.1 1 10 100 CO ECMOILTLTEECRT O TRO T BOA BSAES EV OVLOTLATGAEG E: V : EVB(CVB()V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance Fig.8 Safe Operating Area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0

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