This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification / 7.5±0.2 4.5±0.2 e ■•HFiegha tfuorrwesard current transfer ratio h c 0.8±0.2 3.8±0.2 90˚ FE 1 •Allowing supply with the radial taping n 0.5±60.15±d0.1 01..805±0±.01.1 0.8 C 0.8 C 2. ■ Absolute Maximum Ratings Ta = 25°aC e16.0±1.0 10.1.75±±00..12 01..71±50±.01.2 age. Parameter Symbol Rating Unit u e st Collector-base voltage (Emitter open) VnCBO 120 V y0.c5l±0.1 0.4±0.1 n c CEmoliltetcetro-br-aesme ivttoelrt avgoel t(aCgoel l(eBcatsoer ooppeeenn)) VVCEBEOO 1500 VV 0.8 C ct1 lif2e3 2.05±0.2 1: Emitter i u Collector current t IC t2 A o2d.5±0.2 2.5±0.2 23:: CBoaslleector PCeoallke cctoorl lpeocwtoerr cduisrrseipnatntion IPCCP n13.5 WA ur Pr MT-3-A1 Package oInternal Connection Junction tempierature oTj 150 °C g f pe n. ■CCEStmooEMollrillltaeeetgccecttreoo-t brrtre--aibeacmsmaeaps ivePlet torCavealDrortt haaulvtgmraaoieeglre t(eaatC eg(coEertl mel(esBirctaittssoeerrt iooocpppsceeeD nnni )))Tsca o=STn VVVy2tsitmCCEg5BBEnb°OOOuCole− ±d5 5IIIi3CCE pt n °l=o==Cc a l+111n0 u01m005ed A0µµde p,AA lsI ,m,Bamf CI Ia=C°naEoiiolC l==e0nnnt otdd00 eietwdiindoininnasassncnccocoenen t ttitgi ynynpuUueeeRddL ttoBayynb.ppM11opee520iuadn00t nla≈ats 2Teo0ysn0pti Ωic.ncfMoo.rjapxm/aeCEtin/oUVVVnit Collector-base cutoff current (Emitcteer /open) ICBO VCB = 25 V, IE = 0 win mic 0.1 µA EFmoriwttearr-dba cseu rcruetnoftf t craunrrsenftnete r( Crnaoatliloenc *to1,r 2open) IhEFBEO VVECBE == 140 V V, ,I CI C= s= i0t 1 f Aolloww.se 4 000 40 1000 µA CBTraoaslnlees-ciettmioorin-tte efmrre isqtatueteurM nrsaacaitytiuorna tvioolnt avgoel t*a1ge *1 VVCBfEE((ssaatt)) IIVCC == 11=e AA1a0,,s IIVBBe , ==Iv i11 h= tmm t−AA5p:0/ /mAw, f = 200 MHz 150 12.5 MVVHz T CBPl E Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.*1:Pulse measurement *2:Rank classification Rank Q R S h 4 000 to 10 000 8 000 to 20 00016 000 to 40 000 FE Publication date: February 2003 SJD00269BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2479 P  T I  V I  V C a C CE C BE 1.6 1.2 W) 4 Ta = 25°C IB = 01..90 mmAA VCE = 10 V m 0.8 mA P (C 1.2 )A 00..67 mmAA )A Ta = 85°C ector power dissipation 00..84 (Collector current I C 321 nce0000....2345/ mmmmAAAA (Collector current I Cd00..48 −25°2C5°C oll C 0.1 mAe e. 0 0a 0 g 0 40 80 120 160 0 2 4 6 8 10 12 0 1 a 2 3 Ambient temperature Ta (°C) Collector-emitter voltage VuCE (V) Base-emiett ers tvoltage VBE (V) n cl y n c e ()Base-emitter saturation voltage V VBE(sat)1M 0010.11001 aCo1il0l2Ve5Cc°DBtCo8oEb5r(° iscCau1t0r)nT r2 eaV n=tC −t IIBs2ICCC5 /1 ° IC0(BA3c =)e 1/ 0ec0D0i10s4coont()iCollector-emitter saturation voltage V VCE(sat)nu1010.e10101nd ipnltcCaloi1nul−0lVee2dc5Cdt°eoC Eplrs( scmamafu1ta)0rnaoi r2ilTelenan2n t5=ottd ° I8eICIeCwC5C din°/d 1in Ci I0(naBsAa3s =gnc)nc 1wfco ci0o0oenenn0 t 1tutitg0ir 4yn ynpuUpuPreemeeRiodForward current transfer ratio hdLc FE dtt1o24860auyy 00000nc00000b.p0p00000t 1opeelViuadfCtE n l=aC a1ots01l 0Vleoecsnhttio Ficr E.cTn u1cfa0 r=ro2oe .8r njI5tC° pC 2m/I5Ca°e 1Ct −0(in2A3/5o)°Cn.104 F) f n= 1 MHz o e (pCobed) aintenaTa = 25°C visit follwww.s put capacitancease, input open circuit100 M Please http:// or outmon b ctm Colle (Co 10 0 10 20 30 40 Collector-base voltage V (V) CB 2 SJD00269BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl