This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification / Unit: mm e 4.5±0.1 ■ Features 1.6±0.2 1.5±0.1 •High collector-base voltage (Emitter open) V c ••HLaigrghe c coolllelecctotor-re pmoiwtteerr dvioslstiapgaet i(oBna Pse open) VCCEBOO n d +0.254.0–0.20 2.5±0.1 ••LMoiwni cPoolwleecrto try-peem pitatcekr asgateu, raaltlioown ivnoglC tdaogwe nVsCizEia(nsagt) of the equipment e0.41±.05.±008.1 1 20.5±0.038 +0.11.0–0.2 ag3˚e0..4±0.04 and automatic insertion through the tape packing and the magazine u st packing. 3˚ e ■ AbsoluteP aMraamxeitmerum Ratiengs S Tynma b=o 2l 5°CRating Unnit 3.c0t± 0l.i1f5ecycl2.6±0.1 45˚ 0.4 max. i u d Collector-base voltage (Emtitter open) VCBO 4t00 V o 1 : Base Collector-emitter voltange (Base open) VCEO n400 V r Pr 23 :: ECmoliltetcetror Emitter-base voltage (Collector open) VEBO 5 V ou MiniP3-F1 Package Collector currient oIC 100 mA ng fMayrpkeing Symbol: 1S on. ■NPCJSoutteoEMeonal)rclklaeet* gicco:cteoonbP tltr lrorete iieapmacncmrottadpoewp edrPlte e rh cCaarcriuDa ticrdurthrakucirrmnseaueirseenireitstp atsbae cootriatfo ern1sdr .:*7i sC mtoimpcpsc efD oir rTfs otcahi leo= S aTcIPn rTyCo2tseCitmPjlag5l nebo°cufCot ol1e −r ± cd5p m 5io3 p2r21tn°lt o105oiCco a00lr+n nm1u5edo0rdee pl,s maamfCnma°°naoWdiiolCCA lentnnhtotdde eietwdiindoininasassncnccocoenen t ttitgi ynnpuUueeeRddL ttoayynb.ppMopeeiuadnt nlaatsTeoysnpti ic.ncfMoo.rjaxpm/aetin/Unit Collector-base voltage (Emitntecr eo/pen) VCBO IC = 100 µA, IE = 0 owin emic 400 V CEmoliltetcetro-br-aesme ivttoelrt avgoel nt(taCgeoel nl(eBacatsoer ooppeenn)) VVCEBEOO IICE == 150000 µµAA,, IICBs i==t 00follww.s 4500 VV FCoorlwleacrtdo rc-eumrreitntet rMt rsaaaintsufreart iroanti ovoltage VChEF(Esat) VICC =E 5=e0 5 am VsA,e ,I CIvB i= h= t3 t50p m:m//AAw 30 1.5 V Base-emitter saturation voltage VBE(sat) IC =Pl 50 mA, IB = 5 mA 1.5 V Transition frequency * f V = 30 V, I = −20 mA, f = 200 MHz 40 MHz T CB E Collector output capacitance C V = 30 V, I = 0, f = 1 MHz 7 pF ob CB E (Common base, input open circuited) Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.*:Pulse measurement Publication date: December 2002 SJC00260BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2413 P  T I  V V  I C a C CE CE(sat) C 1.2 Copper plate at the collector 120 Ta = 25°C )V 100 IC / IB = 10 )W 1.0 1is. 7m morme tihna tnh i1c kcnme2s sin area, 100 ( E(sat) (Collector power dissipation P C 0000....8642 ()Collector current I mAC 86420000 ncIB =e 1.0000000000 .........975318642m/ mmmmmmmmmAAAAAAAAAA eector-emitter saturation voltage VCd01.110 25°CTa −=2 755°°CC oll e. 0 0a C0.01 g 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 1 a 10 100 Ambient temperature Ta (°C) Collector-emitter voltage VuCE (V) Collectoer csutrrent IC (mA) n cl y n c e put capacitance()Base-emitter saturation voltage V V (pF)CBE(sat)obase, input open circuited) 0M1.011010.20864111000.1 CaollieVcCt1oDTBMroaE b=ca(ii us−ar2nrtnt5)e ° nCVet nCIt1 Cs0IBa 27CIfT I5E 5(Cn=a m°° =/ =CC1c IA 0 2BMe 5)=/°H Cec1z0D1i0s0coontForward current transfer ratio hiFEn111u852963e00000000n.d1 ipnltCPclaollienlue2ace5dt°1sodCher peF lsc E umamf vriarTnaoie−hislan itl2e= ntttn5I t ot7° dCIfpC15 eC:e0°w o/Cdi nldV/in(limCnasaEsowA gnc=nc ) ww5fcocio Voenwenn 1t. tuti0tgisr0 yn ynepuUpuPreemeeRio()dTransition frequency f MHzdLc T dttoauyyn654321cb.p0000000pt− ope1eliuadft nlEaamtsieot−tesn1rti0 fcicTu. rnrcfenoo .trI j E−IpE1m/ 0 (TV0aemtaC i=BnA / =o2) 53n°0.C V−1000 or outmon b 2 ctm Colle (Co 0 10 100 1000 Collector-base voltage V (V) CB 2 SJC00260BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl