Equivalent C 2SD2016 circuit B Darlington (2kW )(200W ) E Silicon NPN Triple Diffused Planar Transistor Application: Igniter, Relay and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM20(TO220F) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 200 V ICBO VCB=200V 10max mA 10.1±0.2 4.0±0.2 4.22±.80.2 c0.5 VVICCEBEOO 26300 AVV IVhEF(BBEOR)CEO VCEIC=V=4EB1V=0, 6mICVA=1A 102010000tomm1ian5x000 mVA 16.9±0.3 8.4±0.2 a ø3.3±0.2 IB 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max V b 0.8±0.2 PC 25(Tc=25°C) W VBE(sat) IC=1A, IB=1.5mA 2.0max V 3.9±0.2 TTjstg –55 1to5 0+150 °°CC fCTOB VVCCEB==1120VV,, IfE==1–M0.H1zA 9400ttyypp MpHFz 13.0min 11..3355±±00..1155 2.54 2.504.85+-00..120.45+-00..12 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. B C E b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) 3 3mA 1.5mA 1mA (V)CE(sat) 3 3 (VCE=4V) V Collector Current I(A)C 12 IB=00.5.3mmAA ector-Emitter Saturation Voltage 21 125˚C 25˚C –55˚C Collector Current I(A)C 21 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) oll 0 C 0 0 0 1 2 3 4 0.2 1 3 0 1 2 Collector-Emitter Voltage VCE(V) Base Current IB(mA) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics 10000 (VCE=4V) 10000 (VCE=4V) C/W) 5 DC Current Gain hFE1515005000000000 DC Current Gain hFE511005051000000000 1–252555˚˚˚CCC qTransient Thermal Resistance (˚j-a0.15 0.03 0.1 0.5 1 3 0.03 0.1 0.5 1 3 1 5 10 50 100 500 1000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating (VCE=12V) 80 30 Natural Cooling Silicone Grease Cut-off Frequency f(MH)TZ 246000 mum Power Dissipation P(W)C 2100 1155000x0x5x11005x002xx22 With Infinite heatsHinekatsinink :m Amluminum axi M Without Heatsink 2 –00.01 –0.05 –0.1 –0.5 –1 –3 00 25 50 75 100 125 150 Emitter Current IE(A) Ambient Temperature Ta(˚C) 142