This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1824 Silicon NPN epitaxial planar type For low-frequency amplification / Unit: mm e 0.3+–00..01 25) 0.15+–00..0150 4 ■ Features (0. 3 •High forward current transfer ratio h c FE ••LHoigwh ceomllietctetor-rb-eamsei tvtoerlt saagteu r(aCtoiollne cvtoolrt aogpee Vn)C VE(EsaBt)O n d 1.25±0.10 2.1±0.1 •S-Mini type package, allowing downsizing of the equipment e1 2 °5 e. azninde a puatockminatgic. insertion through the tape packaing and the maga- u (0.615.)3±(00.1.65) e stag 0.2±0.1 ■ Absolute Maximum Ratings Tn = 25°C 2.0±0.2 ycl a n 10° c e Collector-basPe avroalmtageete (rEmitter opeen) SVymCBbOol R1a0ti0nig UVnit duct lif 0.9±0.1+0.20.9–0.1 1: Base CEmoliltetcetro-br-aesme ivttoelrt avgoel t(anCgoel (lteBcatsoer ooppeenn)) VVCEBEOO n11t050 VV r Pro 0 to 0.1 E23I::A CEJm:o SliltCetce-tr7o0r u SMini3-G1 Package Collector current I 20 mA o Peak collectoir current IoCCP 50 mA ng fMayrpkeing symbol: 1V on. ■CJSCCutoooEMonlllrcllllaeeeetgicccocttteooon ttrrr ret-- iepmbeacmomaapwspieePlte er tCavaerrDa trordu thalvuirtmsaaoeirseglreitepaat aeg(ctEerit ome(nsBirtaitsseert ioocppsceeD nni ))Tsca o=STPn TVVy2tsCitmjCg5Bnb°OuCole −±d5 5IIi3C p11tn °l=o=55Cc a 00l+11n 01um 5edµA0dAe ,p ls,I mIamfEC ma= °°naoi=iolCC Wl0e nn0ntotdd eietwdiindoininasassncnccocoenen t ttitgi ynnpuUueeeRddL ttoayynb.ppM11opee00iuadn00t nlaatsTeoysnpti ic.ncfMoo.rjaxpm/aetin/UVVnit Emitter-base voltage (Collectocr eo/pen) VCEO IC = 10 µA, IB = 0 win mic 15 V n EBO E C o e CCoolllleeccttoorr--bemasiet tceur tcouftfo cfuf nrcrtuernerte n(nEta m(Bitatseer ooppeenn)) IICCBEOO VVCCEB == 6600 VV,, IIBE s==it 00 follww.s 01.1 µµAA FCoorlwleacrtdo rc-eumrreitntet rMt rsaaaintsufreart iroanti ov o*ltage VChEF(Esat) VICC =E 1=e0 1 am0s AVe ,, IIvBiC h==t t 12p m:m//AAw 400 0.05 10 2.2000 V Transition frequency fT VCPBl = 10 V, IE = −2 mA, f = 200 MHz 90 MHz Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.*:Rank classification Rank R S h 400 to 800 600 to 1 200 FE Publication date: April 2003 SJC00230BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1824 P  T I  V I  V C a C CE C BE 200 80 60 Ta = 25°C VCE = 10 V )W 50 25°C ( mC160 )A 60 IB = 100 µA )A Ta = 75°C −25°C ollector power dissipation P 1284000 (Collector current I mC 2400 nce23456810000000/ µµµµµµµAAAAAAA (Collector current I mCd43210000 C e e. 0 0a 0 g 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 a1.2 1.6 2.0 Ambient temperature T (°C) Collector-emitter voltage uV (V) Base-emitters tvoltage V (V) a CE e BE n cl y n c e or output capacitance() (pF)CCollector-emitter saturation voltage V VobCE(sat)mon base, input open circuited) M01.0010.654321111000.1 CaollieVcCt1DCoMorEb a2c( iis5ua°rntCr)nte nVe−Tt2 aC n 5t I=1IB°Cs0 aCC7 IfT I5E (Cn=a °m = =/Cc1 I A0 2BMe5 )=/°H eCc1zD0i10s0coont()iNoise voltage NV mVForward current transfer ratio hFEn111u196385208642000000e0000000000000n.d1GVFT iuaCV n=E p=nc lt =C2t P8ic l5ao1lo0°n0 lieCnd lu=VeBa ecdFts1LNhodeA rpFeV lsT cER mu amf vgTri a=ranaoi eh isl=1nitl e n0tt7IntI−2t0 o5tC2dC 52 fpI°2 1k°e5CC:e 0ΩCw°ko/ diVCn ldΩ/in(liCmna5sEasow Ak=gncncΩ )1wwfcoci0o oenVwenn t1. tuti0tgisr0 yn ynepuUpuPreemeeRio()dTransition frequency f MHz()Noise voltage NV mVdLc T dttoauy211y1n0628408642cb.p−000000p00000t 0opeel.i1uadft nlEaamtsRieotgt N−=esn521 rti1 2V f kc0 icTΩku0. Ω rnkrcfΩenoo I.tVrIC j E I=C−pE m1/1E 0 (TVamemtaCA i=BnA / =o2) 51n°0.C V−100 Collect (Com 0 0 0 GFTuaV n= =c 2t 8i5o0°n Cd =B FLAT 1 10 100 0.01 0.1 1 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) Collector-emitter voltage VCE (V) 2 SJC00230BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl