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  • 型号: 2SD1757KT146Q
  • 制造商: ROHM Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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2SD1757KT146Q产品简介:

ICGOO电子元器件商城为您提供2SD1757KT146Q由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SD1757KT146Q价格参考¥0.94-¥1.29。ROHM Semiconductor2SD1757KT146Q封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 15V 500mA 150MHz 200mW 表面贴装 SMT3。您可以下载2SD1757KT146Q参考资料、Datasheet数据手册功能说明书,资料中有2SD1757KT146Q 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN 15V 0.5A SOT-346

产品分类

晶体管(BJT) - 单路

品牌

Rohm Semiconductor

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

2SD1757KT146Q

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同 Ib、Ic时的 Vce饱和值(最大值)

400mV @ 50mA,500mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

120 @ 100mA,3V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

SMT3

其它名称

2SD1757KT146QCT

功率-最大值

200mW

包装

剪切带 (CT)

安装类型

表面贴装

封装/外壳

TO-236-3,SC-59,SOT-23-3

晶体管类型

NPN

标准包装

1

电压-集射极击穿(最大值)

15V

电流-集电极(Ic)(最大值)

500mA

电流-集电极截止(最大值)

500nA(ICBO)

频率-跃迁

150MHz

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PDF Datasheet 数据手册内容提取

2SD1757K Power Transistor (15V, 500mA) Datasheet llOutline Parameter Value SMT3   V 15V CEO I 500mA C    SOT-346   SC-59                         llFeatures 1)Low V . (Typ.8mV at I /I =10/1mA) llInner circuit CE(sat) C B 2)Optimal for muting. llApplication MUTING llPackaging specifications                                             Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1757K SMT3 2928 T146 180 8 3000 AA                                                                                                                                                                                     www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.001

2SD1757K                                 Datasheet llAbsolute maximum ratings (T = 25°C) a Parameter Symbol Values Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 15 V CEO Emitter-base voltage V 6.5 V EBO Collector current I 500 mA C Power dissipation P *1 200 mW D Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50μA 30 - - V voltage CBO C Collector-emitter breakdown BV I = 1mA 15 - - V voltage CEO C Emitter-base breakdown voltage BV I = 50μA 6.5 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA - 100 400 mV DC current gain h V = 3V, I = 100mA 120 - 560 - FE CE C V = 5V, I = -50mA, CE E Transition frequency f - 150 - MHz T f = 100MHz V = 10V, I = 0A, Output capacitance C CB E - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R S - - h 120-270 180-390 270-560 - - FE *1 Each terminal mounted on a fererence land.                                                                                      www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/6 20150730 - Rev.001

2SD1757K       Datasheet llElectrical characteristic curves(T = 25°C) a Fig.1 Ground Emitter Propagation Fig.2 Typical Output Characteristics     Characteristics Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector     Current (I)     Current (II)                                                                                             www.rohm.com 3/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.

2SD1757K       Datasheet llElectrical characteristic curves(T = 25°C) a Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation     Voltage vs. Collector Current (I)     Voltage vs. Collector Current (II) Fig.7 Collector-Emitter Saturation Fig.8 Collector-Emitter Saturation     Voltage vs. Collector Current (III)     Voltage vs. Collector Current (IV)                                                                                             www.rohm.com 4/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.

2SD1757K       Datasheet llElectrical characteristic curves(T = 25°C) a Fig.9 Gain Bandwidth Product vs. Fig.10 Collector Output Capacitance vs.     Emitter Current      Collector-Base Voltage Fig.11 Emitter Input Capacitance vs. Fig.12 'ON' Resistance vs. Base Current      Emitter-Base Voltage      Characteristics                                                                                             www.rohm.com 5/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.

2SD1757K       Datasheet llDimensions                                                                                             www.rohm.com 6/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.

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