ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2SD1757KT146Q
数量阶梯 | 香港交货 | 国内含税 |
+xxxx | $xxxx | ¥xxxx |
查看当月历史价格
查看今年历史价格
2SD1757KT146Q产品简介:
ICGOO电子元器件商城为您提供2SD1757KT146Q由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SD1757KT146Q价格参考¥0.94-¥1.29。ROHM Semiconductor2SD1757KT146Q封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 15V 500mA 150MHz 200mW 表面贴装 SMT3。您可以下载2SD1757KT146Q参考资料、Datasheet数据手册功能说明书,资料中有2SD1757KT146Q 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN 15V 0.5A SOT-346 |
产品分类 | 晶体管(BJT) - 单路 |
品牌 | Rohm Semiconductor |
数据手册 | |
产品图片 | |
产品型号 | 2SD1757KT146Q |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 400mV @ 50mA,500mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 120 @ 100mA,3V |
产品目录绘图 | |
产品目录页面 | |
供应商器件封装 | SMT3 |
其它名称 | 2SD1757KT146QCT |
功率-最大值 | 200mW |
包装 | 剪切带 (CT) |
安装类型 | 表面贴装 |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
晶体管类型 | NPN |
标准包装 | 1 |
电压-集射极击穿(最大值) | 15V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | 500nA(ICBO) |
频率-跃迁 | 150MHz |
2SD1757K Power Transistor (15V, 500mA) Datasheet llOutline Parameter Value SMT3 V 15V CEO I 500mA C SOT-346 SC-59 llFeatures 1)Low V . (Typ.8mV at I /I =10/1mA) llInner circuit CE(sat) C B 2)Optimal for muting. llApplication MUTING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1757K SMT3 2928 T146 180 8 3000 AA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.001
2SD1757K Datasheet llAbsolute maximum ratings (T = 25°C) a Parameter Symbol Values Unit Collector-base voltage V 30 V CBO Collector-emitter voltage V 15 V CEO Emitter-base voltage V 6.5 V EBO Collector current I 500 mA C Power dissipation P *1 200 mW D Junction temperature T 150 ℃ j Range of storage temperature T -55 to +150 ℃ stg llElectrical characteristics (T = 25°C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50μA 30 - - V voltage CBO C Collector-emitter breakdown BV I = 1mA 15 - - V voltage CEO C Emitter-base breakdown voltage BV I = 50μA 6.5 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA - 100 400 mV DC current gain h V = 3V, I = 100mA 120 - 560 - FE CE C V = 5V, I = -50mA, CE E Transition frequency f - 150 - MHz T f = 100MHz V = 10V, I = 0A, Output capacitance C CB E - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R S - - h 120-270 180-390 270-560 - - FE *1 Each terminal mounted on a fererence land. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/6 20150730 - Rev.001
2SD1757K Datasheet llElectrical characteristic curves(T = 25°C) a Fig.1 Ground Emitter Propagation Fig.2 Typical Output Characteristics Characteristics Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector Current (I) Current (II) www.rohm.com 3/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SD1757K Datasheet llElectrical characteristic curves(T = 25°C) a Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (I) Voltage vs. Collector Current (II) Fig.7 Collector-Emitter Saturation Fig.8 Collector-Emitter Saturation Voltage vs. Collector Current (III) Voltage vs. Collector Current (IV) www.rohm.com 4/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SD1757K Datasheet llElectrical characteristic curves(T = 25°C) a Fig.9 Gain Bandwidth Product vs. Fig.10 Collector Output Capacitance vs. Emitter Current Collector-Base Voltage Fig.11 Emitter Input Capacitance vs. Fig.12 'ON' Resistance vs. Base Current Emitter-Base Voltage Characteristics www.rohm.com 5/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SD1757K Datasheet llDimensions www.rohm.com 6/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
None