ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2SCR544PT100
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2SCR544PT100产品简介:
ICGOO电子元器件商城为您提供2SCR544PT100由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SCR544PT100价格参考。ROHM Semiconductor2SCR544PT100封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 80V 2.5A 280MHz 2W 表面贴装 MPT3。您可以下载2SCR544PT100参考资料、Datasheet数据手册功能说明书,资料中有2SCR544PT100 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR NPN 80V 2.5A SOT-89开关晶体管 - 偏压电阻器 NPN 80V 2.5A Transistor |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Rohm Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,开关晶体管 - 偏压电阻器,ROHM Semiconductor 2SCR544PT100- |
数据手册 | |
产品型号 | 2SCR544PT100 |
不同 Ib、Ic时的 Vce饱和值(最大值) | 300mV @ 50mA,1A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 120 @ 100mA,3V |
产品种类 | 开关晶体管 - 偏压电阻器 |
供应商器件封装 | MPT3 |
其它名称 | 2SCR544PT100CT |
功率-最大值 | 2W |
功率耗散 | 2 W |
包装 | 剪切带 (CT) |
发射极-基极电压VEBO | 6 V |
商标 | ROHM Semiconductor |
安装类型 | 表面贴装 |
安装风格 | Through Hole |
封装 | Reel |
封装/外壳 | TO-243AA |
封装/箱体 | MPT-3 |
峰值直流集电极电流 | 5 A |
工厂包装数量 | 1000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大工作温度 | + 150 C |
最大工作频率 | 280 MHz |
标准包装 | 1 |
电压-集射极击穿(最大值) | 80V |
电流-集电极(Ic)(最大值) | 2.5A |
电流-集电极截止(最大值) | - |
直流集电极/BaseGainhfeMin | 120 |
集电极—发射极最大电压VCEO | 80 V |
集电极连续电流 | 2.5 A |
频率-跃迁 | 280MHz |
2SCR544P Middle Power Transistors (80V / 2.5A) Datasheet llOutline SOT-89 r Parameter Value SC-62 o V 80V CEO f IC 2.5A d MPT3 e d llFeatures llInner circuit 1)Low saturation voltage,typically n s V =300mV(Max.) CE(sat) n e (I / I =1A/50mA) C B g 2)High speed switching m i s m e o D llApplication c LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING w e R e llPackaging specifications N t Basic Package Taping Reel size Tape width Part No. Package ordering Marking o size code (mm) (mm) unit.(pcs) N SOT-89 2SCR544P 4540 T100 180 12 1000 NS (MPT3) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150731 - Rev.002
2SCR544P Datasheet llAbsolute maximum ratings (T = 25°C) a Parameter Symbol Values Unit Collector-base voltage V 80 V CBO Collector-emitter voltage V 80 V CEO Emitter-base voltage V 6 V EBO I 2.5 r A C Collector current I *1 5 o A CP P *2 0.5 W Power dissipation D f P *3 2.0 W D Junction temperature T d150 ℃ j Range of storage temperature T -55 to +150 ℃ stg e llElectrical characteristics (T = 25°C) a d Values Parameter Symbol Conditions s Unit n Min. Typ. Max. Collector-base breakdown n BV I = 100μA e 80 - - V voltage CBO C g Collector-emitter breakdown m BV I = 1mA 80 - - V voltage CEO C i Emitter-base breakdown voltage BVEBO mIE = 100μA s 6 - - V Collector cut-off current I V = 80V - - 1.0 μA CBO CB e Emitter cut-off current I V = 4V - - 1.0 μA EBO EB o Collector-emitter saturation voltage VCE(sat) IC = 1A, IBD = 50mA - 100 300 mV DC current gain c h V = 3V, I = 100mA 120 - 390 - FE CE C Transition frequency e f VwCE = 10V, IE = -500mA, - 280 - MHz T f = 100MHz R V = 10V, I = 0A, Output capacitance Ce CB E - 16 - pF ob f = 1MHz N Turn-On timte t IC = 1.3A, - 50 - ns on o I = 130mA, B1 I = -130mA, StoNrage time tstg B2 - 700 - ns V ⋍ 10V, CC R = 7.5Ω L Fall time t - 40 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40×40×0.7mm) www.rohm.com 2/6 20150731 - Rev.002 © 2015 ROHM Co., Ltd. All rights reserved.
2SCR544P Datasheet llElectrical characteristic curves(T = 25°C) a Fig.1 Ground Emitter Propagation Fig.2 Typical Output Characteristics Characteristics r o f d e d s n n e g m i s m e o D Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector c Current (I) Current (II) w e R e N t o N www.rohm.com 3/6 20150731 - Rev.002 © 2015 ROHM Co., Ltd. All rights reserved.
2SCR544P Datasheet llElectrical characteristic curves(T = 25°C) a Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (I) Voltage vs. Collector Current (II) r o f d e d s n n e g m i s m e o D Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwidth Product vs. c vs. Collector Current Emitter Current w e R e N t o N www.rohm.com 4/6 20150731 - Rev.002 © 2015 ROHM Co., Ltd. All rights reserved.
2SCR544P Datasheet llElectrical characteristic curves(T = 25°C) a Fig.9 Emitter Input Capacitance vs. Fig.10 Safe Operating Area Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage r o f d e d s n n e g m i s m e SWoITCHING TIME TEST CIRCUIT D c w e R e N t o N www.rohm.com 5/6 20150731 - Rev.002 © 2015 ROHM Co., Ltd. All rights reserved.
2SCR544P Datasheet llDimensions r o f d e d s n n e g m i s m e o D c w e R e N t o N www.rohm.com 6/6 20150731 - Rev.002 © 2015 ROHM Co., Ltd. All rights reserved.
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