2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 !!!!Features !!!!External dimensions (Units : mm) 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) TSMT3 2.8 1.6 2) Low saturation voltage, typically 3 ) (STtyrpo.n :g 2 d0i0scmhVa r gaet p IoC w=e 1r. 0foAr ,i nIBd =uc 0ti.v1eA l)o ad and 1.90.950.95()1 ()3 0.4 2.9 capacitance load. ()2 4 ) Complements the 2SA2113 (((123))) BECamoslilteetectror 0.160.3 0.6 0 0.1 Each0.7 le0.85ad h1.0MAXas same dimensions Abbreviated symbol : UY !Applications Low frequency amplifier High speed switching !!!!Structure NPN Silicon epitaxial planar transistor !!!!Packaging specifications Package Taping Type Code TL Basic ordering unit 3000 (pieces) 2SC5916 !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current ICP 4 A ∗1 Power dissipation PC 500 mW∗2 Junction temperature Tj 150 °C Range of storage temperature Tstg −55~+150 °C ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. 1/3

2SC5916 Transistor !!!!Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector−base breakdown voltage BVCEO 30 − − V IC=100µA Collector−emitter breakdown voltage BVCBO 30 − − V IC=1mA Emitter−base breakdown voltage BVEBO 6 − − V IE=100µA Collector cut-off current ICBO − − 1.0 µA VCB=20V Emitter cut-off current IEBO − − 1.0 µA VEB=4V Collector−emitter staturation voltage VCE(sat) − 200 400 mV IC=1.0A, IB=0.1A DC current gain hFE 120 − 390 − VCD=2V, IC=100mA Transition frequency fT − 250 − MHz VCE=10V, IE=−100mA, f=10MHz Collector output capacitance Cob − 15 − pF VCB=10V, IE=0, f=1MHz Turn-on time Ton − 25 − ns IC=2A Storage time Tstg − 100 − ns IIBB12==2−20000mmAA Fall time Tf − 20 − ns VCC −25V !!!!hFE RANK Q R 120-270 180-390 !!!!Electrical characteristic curves 10 1000 1000 10ms 1ms TVaC=C=2255°CV Ta=125°C VCE=2V A) Tstg IC/IB=10/1 LECTOR CURRENT : I (C0.11 DC100ms SWITCHING TIME (ns)100 TTfon DC CURRENT GAIN : hFE11000 Ta=−40°C Ta=25°C L O C Single non repoetitive pulse 0.01 10 1 0.1 1 10 100 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe operating area Fig.2 Switching Time Fig.3 DC current gain vs. collector current 1000 10 10 Ta=25°C IC/IB=10/1 Ta=25°C DC CURRENT GAIN : hFE11000 VCE=2V VVCCEE==35VV COLLECTOR SATURATION)(V) VOLTAGE : V(satCE0.11 Ta=125°C Ta=25°C OLLECTOR SATURATION VOLTAGE : V (sat)(V)CE0.11 IC/IB=20/1 Ta=−40°C C IC/IB=10/1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage current vs. collector current vs. collector current 2/3

2SC5916 Transistor 10 10 1000 IC/IB=10/1 VCE=2V MHz) TVaC=E=2150°CV BASE EMITTER SATURATION VOLTAGE : V) (V)(satBE 0.11 Ta=100T°aC=−40°C Ta=25°C (A)COLLECTOR CURRENT : IC 0.11 Ta=100°C TaT=a−=4205°C°C TRANSITION FREQUENCY : f (T 10100 0.01 0.01 1 0.001 0.01 0.1 1 10 0 0.5 1 1.5 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage Fig.8 Ground emitter propagation Fig.9 Transition frequency vs. collector current characteristics F)100 (pOB Tf=a1=M2H5°zC C E : C N A T CI A AP 10 C T U P T U O R O T C E LL 1 O 0.1 1 10 100 C COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance !!!!Switching characteristics measurement circuits RL=12.5Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 Base current IB2 waveform 90% IC Collector current 10% waveform Ton Tstg Tf 3/3

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0