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2SC4886产品简介:
ICGOO电子元器件商城为您提供2SC4886由Sanken设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供2SC4886价格参考¥12.00-¥12.14以及Sanken2SC4886封装/规格参数等产品信息。 你可以下载2SC4886参考资料、Datasheet数据手册功能说明书, 资料中有2SC4886详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN AUDIO/GP FM-100 TO-3PF |
产品分类 | 晶体管(BJT) - 单路 |
品牌 | Sanken |
数据手册 | |
产品图片 | |
产品型号 | 2SC4886 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 2V @ 500mA,5A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 50 @ 5A,4V |
供应商器件封装 | TO-3PF |
其它名称 | 2SC4886 DK |
功率-最大值 | 80W |
包装 | 散装 |
安装类型 | 通孔 |
封装/外壳 | TO-3P-3,SC-65-3 |
晶体管类型 | NPN |
标准包装 | 30 |
电压-集射极击穿(最大值) | 150V |
电流-集电极(Ic)(最大值) | 14A |
电流-集电极截止(最大值) | 100µA(ICBO) |
频率-跃迁 | 60MHz |
2SC4886 LAPT Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application: Audio and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM100(TO3PF) SVyCmBObol Ra1t5in0gs UVnit ICBSOymbol CVoCBn=d1it5io0nVs 1R0a0timnagxs UmnAit 15.6±0.2 0.8±0.2 53.5.4±05.2±0.2 VVICCEBEOO 115540 AVV IVhEF(BBEOR)CEO VCEIC=V=4EB2V=5, 5mICVA=5A 11505000mmmiiannx* mVA 23.0±0.3 9.5±0.2 a ø35.5.3±0.2 IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V b 1.6 PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 3.3 3.0 TTjstg –55 1to5 0+150 °°CC *ChOFEB Rank O(50tVoC1B0=01)0, VP,( 7f=01toM1H4z0), Y(90t2o0108ty0p) pF 16.2 112...071555+-00..12 0.8 nTypical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 0.65+-00..12 3.35 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g (V) (Ω) (A) (V) (V) (A) (A) (ms) (ms) (ms) a. Part No. 60 12 5 10 –5 0.5 –0.5 0.26typ 1.5typ 0.35typ B C E b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) 14 750mA 60500m0AmA 400mA 30200m0AmA e V(V)CE(sat) 3 14 (VCE=4V) Collector Current I(A)C150 IB1=155200000mmmmAAAA ector-Emitter Saturation Voltag 21 5A IC=10A Collector Current I(A)C 150 125˚C (Ca2s5˚e CTemp)–30˚C (Case Temp) oll 00 1 2 3 4 C 00 0.2 0.4 0.6 0.8 1.0 00 1 2 Collector-Emitter Voltage VCE(V) Base Current IB(A) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics 200 (VCE=4V) 200 (VCE=4V) C/W) 3 125˚C (˚j-a DC Current Gain hFE1250000 Typ DC Current Gain hFE1025000 –2350˚˚CC qTransient Thermal Resistance 00..115 0.02 0.1 0.5 1 5 1014 0.02 0.1 0.5 1 5 1014 1 10 100 1000 2000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating (VCE=12V) 80 40 80 Cut-off Frequency f(MH)TZ246000 Typ Collector Current I(A)C 01.5105 Without Heatsink DC 1001m0sm1sms mum Power Dissipation P(W)C 642000 With Infinite heatsink Natural Cooling axi M 0.1 Without Heatsink 3.5 –00.02 –0.1 –1 –10 0.052 5 10 50 100 200 00 25 50 75 100 125 150 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 120