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2SC4511产品简介:
ICGOO电子元器件商城为您提供2SC4511由Sanken设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供2SC4511价格参考以及Sanken2SC4511封装/规格参数等产品信息。 你可以下载2SC4511参考资料、Datasheet数据手册功能说明书, 资料中有2SC4511详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN 80V 6A TO220F |
产品分类 | 晶体管(BJT) - 单路 |
品牌 | Sanken |
数据手册 | |
产品图片 | |
产品型号 | 2SC4511 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 200mA,2A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 50 @ 2A,4V |
供应商器件封装 | TO-220F |
功率-最大值 | 30W |
包装 | 散装 |
安装类型 | 通孔 |
封装/外壳 | TO-220-3 整包 |
晶体管类型 | NPN |
标准包装 | 50 |
电压-集射极击穿(最大值) | 80V |
电流-集电极(Ic)(最大值) | 6A |
电流-集电极截止(最大值) | 10µA(ICBO) |
频率-跃迁 | 20MHz |
2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application: Audio and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM20(TO220F) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 120 V ICBO VCB=120V 10max mA 10.1±0.2 4.0±0.2 4.22±.80.2 c0.5 VVICCEBEOO 8660 AVV IVhEF(BBEOR)CEO VCEIC=V=4EB2V=5, 6mICVA=2A 185000mmmiiannx* mVA 16.9±0.3 8.4±0.2 a ø3.3±0.2 IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V b 0.8±0.2 PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 3.9±0.2 TTjstg –55 1to5 0+150 °°CC *ChOFEB Rank O(50tVoC1B0=01),0 PV(,7 f0=t1oM14H0z), Y(90t1o1108t0yp) pF 13.0min 11..3355±±00..1155 nTypical Switching Characteristics (Common Emitter) 2.54 2.504.85+-00..120.45+-00..12 2.4±0.2 2.2±0.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (Ω) (A) (V) (V) (A) (A) (ms) (ms) (ms) a. Part No. B C E 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) 6 3 6 (VCE=4V) 5 200mA 150m A 100mA 80mA (V)CE(sat) V e Collector Current I(A)C 1324 IB=52310000mmmmAAAA ector-Emitter Saturation Voltag 21 IC=6A Collector Current I(A)C 42 125˚C (Case T2e5˚mC p()Case Temp)–30˚C (Case Temp) 00 1 2 3 4 Coll 00 0.52A 1.04A 1.5 00 1 2 Collector-Emitter Voltage VCE(V) Base Current IB(A) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics 300 (VCE=4V) 200 (VCE=4V) C/W) 5 125˚C (˚j-a DC Current Gain hFE1350000 Typ DC Current Gain hFE1025000 –2350˚˚CC qTransient Thermal Resistance 00..145 0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating (VCE=12V) 40 20 30 10 10ms W) Cut-off Frequency f(MH)TZ213000 Typ Collector Current I(A)C 0.155 Without HDeaCtsink 100ms mum Power Dissipation P(C 2100 With Infinite heatsink Natural Cooling axi 0.1 M Without Heatsink 2 –00.02 –0.1 –1 –6 0.053 5 10 50 100 00 25 50 75 100 125 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 111