2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application: Switching Regulator, Lighting Inverter and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM100(TO3PF) SVyCmBObol Ra9t0in0gs UVnit ICBSOymbol CVoCBn=d8it0io0nVs R1a0t0inmgasx UmnAit 15.6±0.2 0.8±0.2 53.5.4±05.2±0.2 VVICCEBEOO 7(P8ul70s0e14) AVV IVhEF(BBEOR)CEO VCEIC=V=4EB1V=0, 7mICVA=3A 18100000tomm3ian0x mVA 23.0±0.3 9.5±0.2 a ø35.5.3±0.2 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max V b 1.6 PC 80(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V 3.3 3.0 TTjstg –55 1to5 0+150 °°CC fCTOB VVCCBE==1102VV,, fI=E=1M–1HAz 1065ttyypp MpHFz 16.2 12..7155 0.8 1.05+-00..12 nTypical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 0.65+-00..12 3.35 1.5 4.4 1.5 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g (V) (Ω) (A) (V) (V) (A) (A) (ms) (ms) (ms) a. Part No. 250 83 3 10 –5 0.45 –1.5 1max 5max 1max B C E b. Lot No. IC–VCE Characteristics (Typical) VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) 1A V) (IC/IB=5) 7 (VCE=4V) Collector Current I(A)C 426 IB=753210000000000mmmmmAAAAA Collector-Emitter Saturation Voltage V(CE(sat)Base-Emitter Saturation Voltage V(V)BE(sat)1 2–1552˚55C˚˚C C( C ((CaCsaaess eeT TeTVmeeCmmpE)pp())sat) VBE(s12a5˚t)C(C–as52eT55e˚mp)˚CC Collector Current I(A)C 246 125˚C (Case Temp)25˚C (Case Temp)–55˚C (Case Temp) 00 1 2 3 4 00.02 0.05 0.1 0.5 1 5 7 00 0.2 0.4 0.6 0.8 1.0 1.2 Collector-Emitter Voltage VCE(V) Collector Current IC(A) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) q j-a–t Characteristics 50 (VCE=4V) 10 C/W) 2 DC Current Gain hFE 150 –2555˚˚CC 125˚C µtttSwitching Time (s)on•stg•f00..5125 VICC:CIB 1 : 2IB520=V2:0.3:–1 Contosnt. tf tstg qTransient Thermal Resistance (˚j-a00..115 0.02 0.05 0.1 0.5 1 5 7 0.1 0.5 1 5 7 1 10 100 1000 Collector Current IC(A) Collector Current IC(A) Time t(ms) Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area Pc–Ta Derating 20 20 80 10 10 Collector Current I(A)C 0.515 WNiathtuoruatl HCeoaotlsiningk 100µs Collector Current I(A)C 0.155 WNLIB=a2i=t3thu–mor1auHl.t 0 CHAoeoaltinsignk mum Power Dissipation P(W)C 642000 With Infinite heatsink Duty :less than1% axi M Without Heatsink 0.150 100 500 1000 0.150 100 500 1000 3.050 25 50 75 100 125 150 Collector-Emitter Voltage VCE(V) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 100