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2SB1559产品简介:
ICGOO电子元器件商城为您提供2SB1559由Sanken设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供2SB1559价格参考¥45.55-¥51.63以及Sanken2SB1559封装/规格参数等产品信息。 你可以下载2SB1559参考资料、Datasheet数据手册功能说明书, 资料中有2SB1559详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP DARL 150V 8A TO3P |
产品分类 | 晶体管(BJT) - 单路 |
品牌 | Sanken |
数据手册 | |
产品图片 | |
产品型号 | 2SB1559 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 2.5V @ 6mA, 6A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 5000 @ 6A,4V |
供应商器件封装 | TO-3P |
功率-最大值 | 80W |
包装 | 散装 |
安装类型 | 通孔 |
封装/外壳 | TO-3P-3,SC-65-3 |
晶体管类型 | PNP - 达林顿 |
标准包装 | 30 |
电压-集射极击穿(最大值) | 150V |
电流-集电极(Ic)(最大值) | 8A |
电流-集电极截止(最大值) | 100µA(ICBO) |
频率-跃迁 | 65MHz |
(70W ) E 2SB1559 B Darlington Equivalent circuit C Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2389) Application: Audio, Series Regulator and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit VVCCBEOO ––116500 VV IICEBBOO VVCBE=B=–1–56V0V ––110000mmaaxx mmAA 2.0 159.6.6±0.4 1.8 5.0±0.2 4.8±0.2 2.0±0.1 VICEBO ––58 AV VhF(BER)CEO VCEI=C–=4–V3,0 ImC=A–6A –5105000mmiinn* V 19.9±0.3 4.0 a ø3.2±0.1 IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max V b PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz min max 2 Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF 20.0 4.0 31.05+-00..12 0.65+-00..12 * hFERank O(5000to12000), P(6500to20000), Y(15000to30000) nTypical Switching Characteristics (Common Emitter) 5.45±0.1B C E5.45±0.1 1.4 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (Ω) (A) (V) (V) (mA) (mA) (ms) (ms) (ms) a. Part No. –60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) mA –8 –10mA –2.–52.0mA –1.8mA–1–.15.m3AmA V(V)CE(sat) –3 –8 (VCE=–4V) e –6 –1.0mA ag A) –6 Collector Current I(A)C––24 –I0B=.8––m00..A53mmAA ollector-Emitter Saturation Volt ––21 IC=–––684AAA Collector Current I(C ––24 125˚C (Case Temp)25˚C (Case T–e3m0˚p)C (Case Temp) C 00 –2 –4 –6 –00.2 –0.5 –1 –5 –10 –50 –100 –200 00 –1 –2 –3 Collector-Emitter Voltage VCE(V) Base Current IB(mA) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics W) 40,000 (VCE=–4V) 50000 125˚C (VCE=–4V) (˚C/j-a 4 DC Current Gain hFE150,,000000 Typ DC Current Gain hFE150000000 –2350˚˚CC qTransient Thermal Resistance 0.15 2,000 1000 0.2 –0.2 –0.5 –1 –5 –8 –0.2 –0.5 –1 –5 –8 1 5 10 50 100 5001000 2000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating 100 (VCE=–12V) –20 80 –10 Cut-off Frequency f(MH)TZ468000 Typ Collector Current I(A)C–0––.515 Without Heatsink DC100m10sms mum Power Dissipation P(W)C 642000 With Infinite heatsink 20 Natural Cooling axi –0.1 M Without Heatsink 3.5 0 –0.05 0 0.02 0.05 0.1 0.5 1 5 8 –2 –5 –10 –50 –100 –200 0 25 50 75 100 125 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 47