This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington For power amplification Unit: mm Complementary to 2SD2138 and 2SD2138A e/4.2±0.2 10.0±0.2 1.0±0.2 5.0±0.1 ■ Features ••HHiigghh -fsoprewedar sdw ciutcrrheinntg transfer ratio hFE c 13.0±0.2 d 5±0.1 90˚ •Allowing automatic insertion with radial taping n 2.1.2±0.1 C 1.0 1.48±0.2 ■ AbsoluteP aMraamxeitmerum Ratings S TymC b=o l25a°CRating Unit ue18.0±0.5older Dip00..6355±±00..11 0.65±0.1stage. 2.25±0.2 Collector-base voltage 2SB1418 VnCBO −60 V S 01..50c55l±±e00.. 11 0.55±0.1 (Emitter open) 2SB1418A −80 n 2.5±0.2 2c.5y±0.2 e C(Boalsleec otopre-ne)mitter voltage 22SSBB11441e188A VCEO −−6800iV uct1 li2f3 1: Base d 2: Collector Emitter-base voltage (Coltlector open) VEBO −t5 V ro 3: Emitter Collector current n IC n−2 A r P MT-4-A1 Package u Peak collector current I −4 A oInternal Connection Collector powier dissipation oPCCP 15 W ng f ype C on. ■JSC(BButaoEMonaslrcslelaeeet-gic eocoetmonp ttr rieet-tienmteacem)marp pievPlte rtoCaarelDatrrtut ahauvrgmaeiroeelretaategcretesTrias22 S=StiB Bc2115sc44°D 1iC1 8T8sAcC o=STnTVy tsV2itmjCgB5EnbEO°uoCle− ±d5 5IVi C3 p1C2tn l°=o5E.cC0 a 0l+−=n1u3 −50ed40 md eV plsA, m amf,IC CaI°°naoi BiolCC=l enn=n t−otdd 0 2eietw diinAdoininasassncnccocoenen t ttitgi ynnpuUueeeRddL ttoayynBb.ppM−−opee86iuadn00t nlaatsTeoysnpti ic.ncfM−oEo.r2ja.8xpm/aetin/UVVnit Collector-base cutoff 2cSBe/1418 ICBO VCB = −60 V, IE = 0 win mic −100 µA cCcuuorrlrrleeenncttt o((rBE-meamsieti ttoetrep reo ncpa)uietnno)tffenan222SSSBBB111444111888AA ICEO VVVCCCEEB === −−−348000 VVVv,,, i IIIBBEsi t=== f000ollowww.se −−−111000000 µA Emitter-base cutoffM current (Collector open) IEBO VEB = −5s Ve , IC = 0p:// −100 µA Forward current transfer ratio hFE1 VCE =e −a4 V, IC h=tt −1 A 1 000  h * V Pl = −4 V, I = −2 A 1 000 10 000 FE2 CE C Collector-emitter saturation voltage V I = −2 A, I = −8 mA −2.5 V CE(sat) C B Transition frequency f V = −10 V, I = − 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = −2 A, I = − 8 mA, I = 8 mA 0.2 µs on C B1 B2 Turn-off time t V = −50 V 2 µs off CC Note)1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2.*:Rank classification Rank R Q P h 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 FE2 Publication date: March 2003 SJD00073BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1418, 2SB1418A P  T I  V V  I C a C CE CE(sat) C 20 −6 −100 ctor power dissipation P (W)C 11550 (1((12)))(WTPCCi=t=hT2oa.u0tW he)at sink Collector current I (A)C −−−−5432 IB=2.0mcA 1.8mA1.6eTmC00=1011A..46.2...4802mm5/mmmm˚AACAAAA mitter saturation voltage V (V)CE(sat)d−− 0−1.110 TC=100˚C –2255˚IC˚CC/IB=250 Colle (2) −1 n 0.2mA eollector-e e. 0 0a C− 0.01 g 0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 − 0.1 −1 a −10 −100 Ambient temperature Ta (°C) Collector-emitter voltage VuCE (V) Collecteo r scturrent IC (A) n cl y n c e Collector current I (A)C−M1−−−−−−0065432100 BaasSeTa-2C−eif=51m˚e1C0 iID0otCt˚eCp rei vr−noa–2 ntlNT2Vtt5aCioe˚=ognBC2 ennrtE5e s ˚ paVCae−tnrBi3teEVicv aC e(Ee pV=/u–ec)l4sDVei−4scoonW)tiForward current transfer ratio hFEnu1111111−000000e0 2345430nd.0 1ipnltcCaloinull−eedc 0hdte.o 1pFTrlsCE c=m amfu1a0rnaoir0isle˚il e–CnntIn2t ottCd5N f− ˚eoICe1wCtodienld in2V: li (5naRC((sAa˚s12oECtg=))nhc)ncWW – wwwfc4ocioiiVattoehhnswenn o −t. amRtutiu1t gi5srte0 ty n0 ayhhnse×e puuUpa5uPrt0ere emes×edRCollector output capacitanceii 2 on (pF)CdatdmLck obt (Common base, input open circuited) d tTmto1aauy 01yA=n001cb.2pl0001pt 5−h ope˚e1elCiauad Ctfa tsno nidlnll kaueanctsdtoeeorrC -snnbtiaoa tbuics r.ean −lcvf 1co0oo olnV.trjavgeCpcem/Bt i oaVenti.CIfTnE=B/Co=1 = 0M(2nV5.H˚)Cz−100 urrent I (A)C−−110 IICCPt=10ms Mai t=1ms °ance R (C/th 102 Please vihttp://w ((12)) ollector c DC mal resist 10 C− 0.1 er A Th 1 B1418 B1418 S S − 0.01 2 2 10−1 −1 −10 −100 −1 000 10−4 10−3 10−2 10−1 1 10 102 103 104 Collector-emitter voltage V (V) Time t (s) CE 2 SJD00073BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl