ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2SA2088T106Q
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2SA2088T106Q产品简介:
ICGOO电子元器件商城为您提供2SA2088T106Q由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2SA2088T106Q价格参考。ROHM Semiconductor2SA2088T106Q封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 60V 500mA 400MHz 200mW 表面贴装 UMT3。您可以下载2SA2088T106Q参考资料、Datasheet数据手册功能说明书,资料中有2SA2088T106Q 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP 60V 0.5A SOT-323两极晶体管 - BJT TRANS GP BJT PNP 60V 0.5A 3PIN |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Rohm Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ROHM Semiconductor 2SA2088T106Q- |
数据手册 | |
产品型号 | 2SA2088T106Q |
不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 10mA,100mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 120 @ 50mA,2V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | UMT3 |
其它名称 | 2SA2088T106QDKR |
功率-最大值 | 200mW |
包装 | Digi-Reel® |
发射极-基极电压VEBO | 6 V |
商标 | ROHM Semiconductor |
增益带宽产品fT | 400 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SC-70,SOT-323 |
封装/箱体 | UMT |
工厂包装数量 | 3000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 200 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 120 at 50 mA at 2 V |
直流集电极/BaseGainhfeMin | 120 at 50 mA at 2 V |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 60 V |
集电极连续电流 | - 0.5 A |
频率-跃迁 | 400MHz |
2SA2088 Medium power transistor (-60V, -0.5A) Datasheet llOutline Parameter Value r UMT3 o V -60V CEO f IC -0.5A d SOT-323 e SC-70 d llFeatures s n 1)High speed switching. llInner circuit (Tf:Typ.:60ns at IC=-500mA) e n 2)Low saturation voltage, typically g (Typ.:-150mV at I =-100mA, I =-10mA) m C B 3)Strong discharge power for inductive load and i capacitance load. s m 4)Complements the 2SC5876 e o D c w e R e llApplication N t SMALL SIGNAL LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING o N llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SA2088 UMT3 2021 T106 180 8 3000 VM www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.001
2SA2088 Datasheet llAbsolute maximum ratings (T = 25°C) a Parameter Symbol Values Unit Collector-base voltage V -60 V CBO Collector-emitter voltage V -60 V CEO Emitter-base voltage V -6 V EBO I -0.5 r A C Collector current I *1 -1.0 o A CP Power dissipation P *2 200 mW D f Junction temperature T 1 50 ℃ j d Range of storage temperature T -55 to +150 ℃ stg e llElectrical characteristics (T = 25°C) a d Values Parameter Symbol Conditions Unit Min. Typ. Max. s n Collector-base breakdown BV I = -100μA -60 - - V voltage CBO C n e Collector-emitter breakdown voltage BVCEO IC = -1mm A g-60 - - V Emitter-base breakdown voltage BV I = -100μA -6 - - V EBO E i Collector cut-off current ICBO mVCB = -40V s - - -1.0 μA Emitter cut-off current IEBO VEB = -4V e - - -1.0 μA Collector-emitter saturation voltage VCoE(sat) IC = -100mA, IB = -10mA - -150 -500 mV D DC current gain h V = -2V, I = -50mA 120 - 270 - FE CE C c Transition frequency f *3 VCE = -10V, IE = 100mA, - 400 - MHz e T f w= 100MHz V = -10V, I = 0mA, Output capacitance R C CB E - 10 - pF ob e f = 1MHz Turn-On time N t IC = -500mA, - 35 - ns on t I = -50mA, B1 o I = 50mA, Storage time t B2 - 100 - ns stg V ⋍ -25V, N CC R = 50Ω L Fall time t - 60 - ns f See test circuit hFE values are calssified as follows : rank Q - - - - hFE 120-270 - - - - *1 Pw=10ms,Single pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SA2088 Datasheet llElectrical characteristic curves(T = 25°C) a Fig.1 Ground Emitter Propagation Fig.2 Typical Output Characteristics Characteristics r o f d e d s n n e g m i s m e o D Fig.3 DC Current Gain vs. Collector Fig.4 DC Current Gain vs. Collector c Current (I) Current (II) w e R e N t o N www.rohm.com 3/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SA2088 Datasheet llElectrical characteristic curves(T = 25°C) a Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (I) Voltage vs. Collector Current (II) r o f d e d s n n e g m i s m e o D Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwidth Product vs. c vs. Collector Current Emitter Current w e R e N t o N www.rohm.com 4/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SA2088 Datasheet llElectrical characteristic curves(T = 25°C) a Fig.9 Emitter Input Capacitance vs. Fig.10 Safe Operating Area Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage r o f d e d s n n e g m i s m e SWoITCHING TIME TEST CIRCUIT D c w e R e N t o N www.rohm.com 5/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
2SA2088 Datasheet llDimensions r o f d e d s n n e g m i s m e o D c w e R e N t o N www.rohm.com 6/6 20150730 - Rev.001 © 2015 ROHM Co., Ltd. All rights reserved.
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