2SA1859/1859A Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC4883/A) Application: Audio Output Driver and TV Velocity-modulation nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsFM20(TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SA1859 2SA1859A 2SA1859 2SA1859A VCBO –150 –180 V ICBO –10max mA 10.1±0.2 4.0±0.2 4.22±.80.2 c0.5 VVICCEBEOO –150 ––62 –180 AVV IVE(BBOR)CEO ICV=EB–=10–6mVAVCB= –1–5105m0–in10ma–x1–8108m0in mVVA 16.9±0.3 8.4±0.2 a ø3.3±0.2 IB –1 A hFE VCE=–10V, IC=–0.7A 60 to 240 b 0.8±0.2 PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V 3.9±0.2 TTjstg –55 1to5 0+150 °°CC fCTOB VVCCBE==––1102VV,, fI=E=10M.7HAz 6300ttyypp MpHFz 13.0min 11..3355±±00..1155 nTypical Switching Characteristics (Common Emitter) 2.54 2.504.85+-00..120.45+-00..12 2.4±0.2 2.2±0.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g (V) (Ω) (A) (V) (V) (mA) (mA) (ms) (ms) (ms) a. Part No. –20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ B C E b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) –2 V) –3 –2 (VCE=–4V) –100mA –60mA –30mA –15mA V(CE(sat) e ag A) Collector Current I(A)C–1 I–B1=0–m5mAA ollector-Emitter Saturation Volt ––21 –0.5A –1A IC=–2A Collector Current I(C –1 125˚C (CaseTemp) 25˚C (CaseTemp) –30˚C (CaseTemp) C 00 –2 –4 –6 –8 –10 0–2 –5 –10 –50 –100 –500–1000 00 –0.5 –1 Collector-Emitter Voltage VCE(V) Base Current IB(mA) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics 300 (VCE=–4V) 300 (VCE=–4V) W) 7 DC Current Gain hFE150–000.01 Typ–0.1 –0.5 –1 –2 DC Current Gain hFE150–000.01 –0.–11232505˚˚˚CCC –0.5 –1 –2 qTransient Thermal Resistance (˚C/j-a 151 10 100 1000 2000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating (VCE=–12V) 100 –5 20 Cut-off Frequency f(MH)TZ648000 Typ Collector Current I(A)C–––000–...1155 WNiathtuoruatl HCeoaotlsiningk DC 100ms10ms1ms mum Power Dissipation P(W)C 10 With Infinite heatsink 20 1.2SA1859 axi 2.2SA1859A M Without Heatsink 00.01 0.05 0.1 0.5 1 2 –0.01–1 –5 –10 –50 –1001–2020 200 25 50 75 100 125 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 33