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2SA1693产品简介:
ICGOO电子元器件商城为您提供2SA1693由Sanken设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供2SA1693价格参考以及Sanken2SA1693封装/规格参数等产品信息。 你可以下载2SA1693参考资料、Datasheet数据手册功能说明书, 资料中有2SA1693详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP 80V 6A TO3P |
产品分类 | 晶体管(BJT) - 单路 |
品牌 | Sanken |
数据手册 | |
产品图片 | |
产品型号 | 2SA1693 |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 1.5V @ 200mA,2A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 50 @ 2A,4V |
供应商器件封装 | TO-3P |
功率-最大值 | 60W |
包装 | 散装 |
安装类型 | 通孔 |
封装/外壳 | TO-3P-3 整包 |
晶体管类型 | PNP |
标准包装 | 30 |
电压-集射极击穿(最大值) | 80V |
电流-集电极(Ic)(最大值) | 6A |
电流-集电极截止(最大值) | 10µA(ICBO) |
频率-跃迁 | 20MHz |
2SA1693 Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC4466) Application: Audio and General Purpose nAbsolute maximum ratings (Ta=25°C) nElectrical Characteristics (Ta=25°C) External DimensionsMT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit VVCCBEOO ––8800 VV IICEBBOO VVCEBB==––860VV ––1100mmaaxx mmAA 2.0 159.6.6±0.4 1.8 5.0±0.2 4.8±0.2 2.0±0.1 VICEBO ––66 AV VhF(BER)CEO VCEI=C–=4–V5,0 ImC=A–2A –8500mmiinn* V 19.9±0.3 4.0 a ø3.2±0.1 b IB –3 A VCE(sat) IC=–2A, IB=–0.2A –1.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz TTjstg –55 1to5 0+150 °°CC *ChOFBERank O(50VtoC1B0=0–)1, 0PV(,7 f0=t1oM14H0z), Y(90to115800ty)p pF 20.0min 4.0max 312.05+-00..12 0.65+-00..12 nTypical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4 B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g (V) (Ω) (A) (V) (V) (A) (A) (ms) (ms) (ms) a. Part No. –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No. IC–VCE Characteristics (Typical) VCE(sat)–IB Characteristics (Typical) IC–VBE Temperature Characteristics (Typical) –6 –200mA –150m A –1–0800mmAA (V)CE(sat) –3 –6 (VCE=–4V) Collector Current I(A)C ––24 IB=––––53210000mmmmAAAA ector-Emitter Saturation Voltage V ––21 –2A –4A IC=–6A Collector Current I(A)C ––42 125˚C (Case T2e5˚mCp )(Case Temp)–30˚C (Case Temp) 00 –1 –2 –3 –4 Coll 00 –0.5 –1.0 –1.5 00 –1 –2 Collector-Emitter Voltage VCE(V) Base Current IB(A) Base-Emittor Voltage VBE(V) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) q j-a–t Characteristics (VCE=–4V) (VCE=–4V) W) 300 300 C/ 5 DC Current Gain hFE1350000 Typ DC Current Gain hFE1350000 –1232505˚˚˚CCC qTransient Thermal Resistance (˚j-a00..135 –0.02 –0.1 –0.5 –1 –5–6 –0.02 –0.1 –0.5 –1 –5–6 1 10 100 1000 2000 Collector Current IC(A) Collector Current IC(A) Time t(ms) fT–IE Characteristics (Typical) Safe Operating Area (Single Pulse) Pc–Ta Derating (VCE=–12V) 30 –20 60 Typ –10 10ms W) Cut-off Frequency f(MH)TZ2100 Collector Current I(A)C–0––.155 With1o0u0tm HseatDsCink mum Power Dissipation P(C 4200 With Infinite heatsink Natural Cooling axi M Without Heatsink 3.5 00.02 0.050.1 0.5 1 56 –0.1–5 –10 –50 –100 00 25 50 75 100 125 150 Emitter Current IE(A) Collector-Emitter Voltage VCE(V) Ambient Temperature Ta(˚C) 27